1
|
Gao Z, Zhang Y, Li X, Zhang X, Chen X, Du G, Hou F, Gu B, Lun Y, Zhao Y, Zhao Y, Qu Z, Jin K, Wang X, Chen Y, Liu Z, Huang H, Gao P, Mostovoy M, Hong J, Cheong SW, Wang X. Mechanical manipulation for ordered topological defects. SCIENCE ADVANCES 2024; 10:eadi5894. [PMID: 38170776 PMCID: PMC10796077 DOI: 10.1126/sciadv.adi5894] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Accepted: 12/01/2023] [Indexed: 01/05/2024]
Abstract
Randomly distributed topological defects created during the spontaneous symmetry breaking are the fingerprints to trace the evolution of symmetry, range of interaction, and order parameters in condensed matter systems. However, the effective mean to manipulate topological defects into ordered form is elusive due to the topological protection. Here, we establish a strategy to effectively align the topological domain networks in hexagonal manganites through a mechanical approach. It is found that the nanoindentation strain gives rise to a threefold Magnus-type force distribution, leading to a sixfold symmetric domain pattern by driving the vortex and antivortex in opposite directions. On the basis of this rationale, sizeable mono-chirality topological stripe is readily achieved by expanding the nanoindentation to scratch, directly transferring the randomly distributed topological defects into an ordered form. This discovery provides a mechanical strategy to manipulate topological protected domains not only on ferroelectrics but also on ferromagnets/antiferromagnets and ferroelastics.
Collapse
Affiliation(s)
- Ziyan Gao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yixuan Zhang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaomei Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xiangping Zhang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xue Chen
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guoshuai Du
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Fei Hou
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Baijun Gu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yao Zhao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yingtao Zhao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Zhaoliang Qu
- Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081, China
| | - Ke Jin
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaolei Wang
- Department of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Yabin Chen
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Zhanwei Liu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Maxim Mostovoy
- Zernile Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Sang-Wook Cheong
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ 08854, USA
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| |
Collapse
|
2
|
Maguire JR, McCluskey CJ, Holsgrove KM, Suna A, Kumar A, McQuaid RGP, Gregg JM. Ferroelectric Domain Wall p-n Junctions. NANO LETTERS 2023; 23:10360-10366. [PMID: 37947380 PMCID: PMC10683062 DOI: 10.1021/acs.nanolett.3c02966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 10/23/2023] [Accepted: 10/25/2023] [Indexed: 11/12/2023]
Abstract
We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that in-operando potential profiles and extracted electric fields, associated with p-n junctions contained within the walls, can be fully rationalized through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones and space-charge fields) normally associated with extrinsically doped semiconductor p-n junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between p and n regions, at the core of conventional p-n junction behavior, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.
Collapse
Affiliation(s)
- Jesi R. Maguire
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| | - Conor J. McCluskey
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| | - Kristina M. Holsgrove
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| | - Ahmet Suna
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| | - Amit Kumar
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| | - Raymond G. P. McQuaid
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| | - J. Marty Gregg
- School
of Mathematics and Physics, Queen’s
University Belfast, Belfast BT7 1NN, U.K.
| |
Collapse
|
3
|
Huang Q, Yang J, Chen Z, Chen Y, Cabral MJ, Luo H, Li F, Zhang S, Li Y, Xie Z, Huang H, Mai YW, Ringer SP, Liu S, Liao X. Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2313-2318. [PMID: 36534513 DOI: 10.1021/acsami.2c14598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO3, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO3 under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials.
Collapse
Affiliation(s)
- Qianwei Huang
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Jiyuan Yang
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang310024, China
| | - Zibin Chen
- Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yujie Chen
- School of Mechanical Engineering, The University of Adelaide, Adelaide, South Australia5005, Australia
| | - Matthew J Cabral
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Haosu Luo
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, China
| | - Fei Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an710049, China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2522, Australia
| | - Yulan Li
- Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, Washington99352, United States
| | - Zonghan Xie
- School of Mechanical Engineering, The University of Adelaide, Adelaide, South Australia5005, Australia
| | - Houbing Huang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing100081, China
| | - Yiu-Wing Mai
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Simon P Ringer
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang310024, China
| | - Xiaozhou Liao
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| |
Collapse
|
4
|
Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O 3. Nat Commun 2022; 13:7239. [PMID: 36433950 PMCID: PMC9700693 DOI: 10.1038/s41467-022-34777-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 11/04/2022] [Indexed: 11/27/2022] Open
Abstract
Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180° domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O3. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/μm) at voltages ≤2 V and metallic-like non thermally-activated transport properties down to 4 K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O3 films is explained by an interplay between ferroelastic a- and c-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged and electrically switchable domain walls for nanoelectronics.
Collapse
|
5
|
McCluskey CJ, Colbear MG, McConville JPV, McCartan SJ, Maguire JR, Conroy M, Moore K, Harvey A, Trier F, Bangert U, Gruverman A, Bibes M, Kumar A, McQuaid RGP, Gregg JM. Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204298. [PMID: 35733393 PMCID: PMC11475267 DOI: 10.1002/adma.202204298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Revised: 06/13/2022] [Indexed: 06/15/2023]
Abstract
Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180° charged domain walls, in partially switched ferroelectric thin-film single-crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 1013 ) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm2 V-1 s-1 . This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.
Collapse
Affiliation(s)
- Conor J. McCluskey
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | - Matthew G. Colbear
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | | | - Shane J. McCartan
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | - Jesi R. Maguire
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | - Michele Conroy
- Department of Physics & Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
- Present address:
Department of MaterialsImperial College LondonRoyal School of MinesExhibition RoadLondonSW7 2AZUK
| | - Kalani Moore
- Department of Physics & Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Alan Harvey
- Department of Physics & Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Felix Trier
- Unité Mixte de PhysiqueCNRSThalesUniversité Paris‐SaclayPalaiseau91767France
- Department of Energy Conversion and StorageTechnical University of DenmarkKongens Lyngby2800Denmark
| | - Ursel Bangert
- Department of Physics & Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Alexei Gruverman
- Department of Physics and AstronomyUniversity of NebraskaLincolnNE68588USA
| | - Manuel Bibes
- Unité Mixte de PhysiqueCNRSThalesUniversité Paris‐SaclayPalaiseau91767France
| | - Amit Kumar
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | | | - J. Marty Gregg
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| |
Collapse
|
6
|
O'Connell EN, Moore K, McFall E, Hennessy M, Moynihan E, Bangert U, Conroy M. TopoTEM: A Python Package for Quantifying and Visualizing Scanning Transmission Electron Microscopy Data of Polar Topologies. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:1-9. [PMID: 35318910 DOI: 10.1017/s1431927622000435] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The exotic internal structure of polar topologies in multiferroic materials offers a rich landscape for materials science research. As the spatial scale of these entities is often subatomic in nature, aberration-corrected transmission electron microscopy (TEM) is the ideal characterization technique. Software to quantify and visualize the slight shifts in atomic placement within unit cells is of paramount importance due to the now routine acquisition of images at such resolution. In the previous ~decade since the commercialization of aberration-corrected TEM, many research groups have written their own code to visualize these polar entities. More recently, open-access Python packages have been developed for the purpose of TEM atomic position quantification. Building on these packages, we introduce the TEMUL Toolkit: a Python package for analysis and visualization of atomic resolution images. Here, we focus specifically on the TopoTEM module of the toolkit where we show an easy to follow, streamlined version of calculating the atomic displacements relative to the surrounding lattice and thus plotting polarization. We hope this toolkit will benefit the rapidly expanding field of topology-based nano-electronic and quantum materials research, and we invite the electron microscopy community to contribute to this open-access project.
Collapse
Affiliation(s)
- Eoghan N O'Connell
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Kalani Moore
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Elora McFall
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Michael Hennessy
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Eoin Moynihan
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Ursel Bangert
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Michele Conroy
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
- Department of Materials, Faculty of Engineering, London Centre of Nanotechnology, Imperial College London, London, UK
| |
Collapse
|
7
|
Ghara S, Geirhos K, Kuerten L, Lunkenheimer P, Tsurkan V, Fiebig M, Kézsmárki I. Giant conductivity of mobile non-oxide domain walls. Nat Commun 2021; 12:3975. [PMID: 34172747 PMCID: PMC8233373 DOI: 10.1038/s41467-021-24160-2] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2020] [Accepted: 05/31/2021] [Indexed: 02/06/2023] Open
Abstract
Atomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.
Collapse
Affiliation(s)
- S. Ghara
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| | - K. Geirhos
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| | - L. Kuerten
- grid.5801.c0000 0001 2156 2780Department of Materials, ETH Zurich, Zurich, Switzerland
| | - P. Lunkenheimer
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| | - V. Tsurkan
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany ,grid.450974.bInstitute of Applied Physics, Chisinau, Republic of Moldova
| | - M. Fiebig
- grid.5801.c0000 0001 2156 2780Department of Materials, ETH Zurich, Zurich, Switzerland
| | - I. Kézsmárki
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| |
Collapse
|
8
|
Guy JGM, Cochard C, Aguado‐Puente P, Soergel E, Whatmore RW, Conroy M, Moore K, Courtney E, Harvey A, Bangert U, Kumar A, McQuaid RGP, Gregg JM. Anomalous Motion of Charged Domain Walls and Associated Negative Capacitance in Copper-Chlorine Boracite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008068. [PMID: 33734520 PMCID: PMC11469175 DOI: 10.1002/adma.202008068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 01/27/2021] [Indexed: 06/12/2023]
Abstract
During switching, the microstructure of a ferroelectric normally adapts to align internal dipoles with external electric fields. Favorably oriented dipolar regions (domains) grow at the expense of those in unfavorable orientations and this is manifested in a predictable field-induced motion of the walls that separate one domain from the next. Here, the discovery that specific charged 90°domain walls in copper-chlorine boracite move in the opposite direction to that expected, increasing the size of the domain in which polarization is anti-aligned with the applied field, is reported. Polarization-field (P-E) hysteresis loops, inferred from optical imaging, show negative gradients and non-transient negative capacitance, throughout the P-E cycle. Switching currents (generated by the relative motion between domain walls and sensing electrodes) confirm this, insofar as their signs are opposite to those expected conventionally. For any given bias, the integrated switching charge due to this anomalous wall motion is directly proportional to time, indicating that the magnitude of the negative capacitance component should be inversely related to frequency. This passes Jonscher's test for the misinterpretation of positive inductance and gives confidence that field-induced motion of these specific charged domain walls generates a measurable negative capacitance contribution to the overall dielectric response.
Collapse
Affiliation(s)
- Joseph G. M. Guy
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | - Charlotte Cochard
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
- School of Science and EngineeringUniversity of DundeeNethergateDundeeDD1 4HNUK
| | | | - Elisabeth Soergel
- Institute of PhysicsUniversity of BonnWegelerstrasse 8Bonn53115Germany
| | - Roger W. Whatmore
- Department of MaterialsImperial College LondonExhibition RoadLondonSW7 2AZUK
| | - Michele Conroy
- Department of Physics and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Kalani Moore
- Department of Physics and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Eileen Courtney
- Department of Physics and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Alan Harvey
- Department of Physics and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Ursel Bangert
- Department of Physics and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Amit Kumar
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | | | - J. Marty Gregg
- School of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| |
Collapse
|
9
|
Fernandez-Posada CM, Cochard C, Gregg JM, Whatmore RW, Carpenter MA. Order-disorder, ferroelasticity and mobility of domain walls in multiferroic Cu-Cl boracite. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:095402. [PMID: 33202391 DOI: 10.1088/1361-648x/abcb0f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Domain walls in Cu-Cl boracite develop as a consequence of an improper ferroelastic, improper ferroelectric transition, and have attracted close interest because some are conductive and all can be mechanically written and repositioned by application of an electric field. The phase transition and its associated dynamical properties have been analysed here from the perspective of strain and elasticity. Determination of spontaneous strains from published lattice parameter data has allowed the equilibrium long-range order parameter for F [Formula: see text]3c → Pca21 to be modelled simply as being close to the order-disorder limit. High acoustic loss in the cubic phase, revealed by resonant ultrasound spectroscopy, is consistent with the presence of dynamical microdomains of the orthorhombic structure with relaxation times in the vicinity of ∼10-5-10-6 s. Low acoustic loss in the stability field of the orthorhombic structure signifies, on the other hand, that ferroelastic twin walls which develop as a consequence of the order-disorder process are immobile on this time scale. A Debye loss peak accompanied by ∼1% elastic stiffening at ∼40 K is indicative of some freezing of defects which couple with strain or of some more intrinsic freezing process. The activation energy of ⩾∼0.01-0.02 eV implies a mechanism which could involve strain relaxation clouds around local ferroelectric dipoles or freezing of polarons that determine the conductivity of twin walls.
Collapse
Affiliation(s)
- C M Fernandez-Posada
- Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, United Kingdom
| | - C Cochard
- Centre for Nanostructured Media, School of Mathematics and Physics, Queen's University Belfast, Belfast BT7 1NN, United Kingdom
| | - J M Gregg
- Centre for Nanostructured Media, School of Mathematics and Physics, Queen's University Belfast, Belfast BT7 1NN, United Kingdom
| | - R W Whatmore
- Department of Chemistry, University College Cork, Cork, Ireland
- Department of Materials, Faculty of Engineering, Imperial College London, London, SW7 2AZ, United Kingdom
| | - M A Carpenter
- Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, United Kingdom
| |
Collapse
|
10
|
Yudin P, Shapovalov K, Sluka T, Peräntie J, Jantunen H, Dejneka A, Tyunina M. Mobile and immobile boundaries in ferroelectric films. Sci Rep 2021; 11:1899. [PMID: 33479382 PMCID: PMC7820330 DOI: 10.1038/s41598-021-81516-w] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Accepted: 01/05/2021] [Indexed: 11/17/2022] Open
Abstract
The intrinsic mobile interfaces in ferroelectrics—the domain walls can drive and enhance diverse ferroelectric properties, essential for modern applications. Control over the motion of domain walls is of high practical importance. Here we analyse theoretically and show experimentally epitaxial ferroelectric films, where mobile domain walls coexist and interact with immobile growth-induced interfaces—columnar boundaries. Whereas these boundaries do not disturb the long-range crystal order, they affect the behaviour of domain walls in a peculiar selective manner. The columnar boundaries substantially modify the behaviour of non-ferroelastic domains walls, but have negligible impact on the ferroelastic ones. The results suggest that introduction of immobile boundaries into ferroelectric films is a viable method to modify domain structures and dynamic responses at nano-scale that may serve to functionalization of a broader range of ferroelectric films where columnar boundaries naturally appear as a result of the 3D growth.
Collapse
Affiliation(s)
- P Yudin
- Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Praha 8, Czech Republic. .,Kutateladze Institute of Thermophysics, Siberian Branch of Russian Academy of Science, Lavrent'eva av. 1, Novosibirsk, Russia.
| | - K Shapovalov
- Institutut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193, Bellaterra, Spain.,CNRS, Université de Bordeaux, ICMCB, UPR, 9048, 33600, Pessac, France
| | - T Sluka
- CREAL SA, Chemin du Paqueret 1A, CH-1025, Saint-Sulpice, Switzerland
| | - J Peräntie
- Microelectronics Research Unit, University of Oulu, P.O. Box 4500, 90014, Oulu, Finland
| | - H Jantunen
- Microelectronics Research Unit, University of Oulu, P.O. Box 4500, 90014, Oulu, Finland
| | - A Dejneka
- Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Praha 8, Czech Republic
| | - M Tyunina
- Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Praha 8, Czech Republic.,Microelectronics Research Unit, University of Oulu, P.O. Box 4500, 90014, Oulu, Finland
| |
Collapse
|
11
|
Wang F, Fu Y, Ziffer ME, Dai Y, Maehrlein SF, Zhu XY. Solvated Electrons in Solids-Ferroelectric Large Polarons in Lead Halide Perovskites. J Am Chem Soc 2021; 143:5-16. [PMID: 33320656 DOI: 10.1021/jacs.0c10943] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Solvation plays a pivotal role in chemistry and biology. A solid-state analogy of solvation is polaron formation, but the magnitude of Coulomb screening is typically an order of magnitude weaker than that of solvation in aqueous solutions. Here, we describe a new class of polarons, the ferroelectric large polaron, proposed initially by Miyata and Zhu in 2018 (Miyata, K.; Zhu, X.-Y. Ferroelectric Large Polarons. Nat. Mater. 2018, 17 (5), 379-381). This type of polaron allows efficient Coulomb screening of an electron or hole by extended ordering of dipoles from symmetry-broken unit cells. The local ordering is reflected in the ferroelectric-like THz dielectric responses of lead halide perovskites (LHPs) and may be partially responsible for their exceptional optoelectronic performances. Despite the likely absence of long-range ferroelectricity in LHPs, a charge carrier may be localized to and/or induce the formation of nanoscale domain boundaries of locally ordered dipoles. Based on the known planar nature of energetically favorable domain boundaries in ferroelectric materials, we propose that a ferroelectric polaron localizes to planar boundaries of transient polar nanodomains. This proposal is supported by dynamic simulations showing sheet-like transient electron or hole wave functions in LHPs. Thus, the Belgian-waffle-shaped ferroelectric polaron in the three-dimensional LHP crystal structure is a large polaron in two dimensions and a small polaron in the perpendicular direction. The ferroelectric large polaron may form in other crystalline solids characterized by dynamic symmetry breaking and polar fluctuations. We suggest that the ability to form ferroelectric large polarons can be a general principle for the efficient screening of charge carriers from scattering with other charge carriers, with charged defects and with longitudinal optical phonons, thus contributing to enhanced optoelectronic properties.
Collapse
Affiliation(s)
- Feifan Wang
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Yongping Fu
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Mark E Ziffer
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Yanan Dai
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sebastian F Maehrlein
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - X-Y Zhu
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| |
Collapse
|
12
|
Gradauskaite E, Meisenheimer P, Müller M, Heron J, Trassin M. Multiferroic heterostructures for spintronics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
AbstractFor next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.
Collapse
Affiliation(s)
- Elzbieta Gradauskaite
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - Peter Meisenheimer
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Marvin Müller
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - John Heron
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Morgan Trassin
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| |
Collapse
|
13
|
Kelley KP, Ren Y, Morozovska AN, Eliseev EA, Ehara Y, Funakubo H, Giamarchi T, Balke N, Vasudevan RK, Cao Y, Jesse S, Kalinin SV. Dynamic Manipulation in Piezoresponse Force Microscopy: Creating Nonequilibrium Phases with Large Electromechanical Response. ACS NANO 2020; 14:10569-10577. [PMID: 32806054 DOI: 10.1021/acsnano.0c04601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Domain walls and topological defects in ferroelectric materials have emerged as a powerful tool for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies. However, the dynamic nature of these features severely limits studies of their local physics since application of local biases or pressures in piezoresponse force microscopy induce wall displacement as a primary response. Here, we introduce an approach for the control and modification of domain structures based on automated experimentation, whereby real-space image-based feedback is used to control the tip bias during ferroelectric switching, allowing for modification routes conditioned on domain states under the tip. This automated experiment approach is demonstrated for the exploration of domain wall dynamics and creation of metastable phases with large electromechanical response.
Collapse
Affiliation(s)
- Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yao Ren
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
| | - Anna N Morozovska
- Institute of Physics, National Academy of Science of Ukraine, Pr. Nauki 46, 03028 Kyiv, Ukraine
| | - Eugene A Eliseev
- Institute for Problems of Materials Science, National Academy of Science of Ukraine, Krjijanovskogo 3, 03142 Kyiv, Ukraine
| | - Yoshitaka Ehara
- Department of Communications Engineering, National Defense Academy, Hashirimizu, Yokosuka, 239-8686, Japan
- Department of Material Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
| | - Hiroshi Funakubo
- Department of Material Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
| | - Thierry Giamarchi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva, Switzerland
| | - Nina Balke
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ye Cao
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| |
Collapse
|
14
|
McConville JPV, Lu H, Wang B, Tan Y, Cochard C, Conroy M, Moore K, Harvey A, Bangert U, Chen L, Gruverman A, Gregg JM. Ferroelectric Domain Wall Memristor. ADVANCED FUNCTIONAL MATERIALS 2020; 30:2000109. [PMID: 32684905 PMCID: PMC7357591 DOI: 10.1002/adfm.202000109] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Revised: 03/27/2020] [Accepted: 04/08/2020] [Indexed: 05/31/2023]
Abstract
A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this "domain wall memristor" demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
Collapse
Affiliation(s)
- James P. V. McConville
- Centre for Nanostructured MediaSchool of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | - Haidong Lu
- Physics and AstronomyUniversity of Nebraska‐LincolnLincolnNebraska68588‐0299USA
| | - Bo Wang
- Department of Materials Science and EngineeringPennsylvania State University221 Steidle BuildingUniversity ParkPA16802USA
| | - Yueze Tan
- Department of Materials Science and EngineeringPennsylvania State University221 Steidle BuildingUniversity ParkPA16802USA
| | - Charlotte Cochard
- Centre for Nanostructured MediaSchool of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| | - Michele Conroy
- Department of PhysicsSchool of Sciences and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Kalani Moore
- Department of PhysicsSchool of Sciences and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Alan Harvey
- Department of PhysicsSchool of Sciences and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Ursel Bangert
- Department of PhysicsSchool of Sciences and Bernal InstituteUniversity of LimerickLimerickV94 T9PXIreland
| | - Long‐Qing Chen
- Department of Materials Science and EngineeringPennsylvania State University221 Steidle BuildingUniversity ParkPA16802USA
| | - Alexei Gruverman
- Physics and AstronomyUniversity of Nebraska‐LincolnLincolnNebraska68588‐0299USA
| | - J. Marty Gregg
- Centre for Nanostructured MediaSchool of Mathematics and PhysicsQueen's University BelfastBelfastBT7 1NNUK
| |
Collapse
|
15
|
Evans DM, Garcia V, Meier D, Bibes M. Domains and domain walls in multiferroics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0067] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
AbstractMultiferroics are materials combining several ferroic orders, such as ferroelectricity, ferro- (or antiferro-) magnetism, ferroelasticity and ferrotoroidicity. They are of interest both from a fundamental perspective, as they have multiple (coupled) non-linear functional responses providing a veritable myriad of correlated phenomena, and because of the opportunity to apply these functionalities for new device applications. One application is, for instance, in non-volatile memory, which has led to special attention being devoted to ferroelectric and magnetic multiferroics. The vision is to combine the low writing power of ferroelectric information with the easy, non-volatile reading of magnetic information to give a “best of both worlds” computer memory. For this to be realised, the two ferroic orders need to be intimately linked via the magnetoelectric effect. The magnetoelectric coupling – the way polarization and magnetization interact – is manifested by the formation and interactions of domains and domain walls, and so to understand how to engineer future devices one must first understand the interactions of domains and domain walls. In this article, we provide a short introduction to the domain formation in ferroelectrics and ferromagnets, as well as different microscopy techniques that enable the visualization of such domains. We then review the recent research on multiferroic domains and domain walls, including their manipulation and intriguing properties, such as enhanced conductivity and anomalous magnetic order. Finally, we discuss future perspectives concerning the field of multiferroic domain walls and emergent topological structures such as ferroelectric vortices and skyrmions.
Collapse
Affiliation(s)
- Donald M. Evans
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
| | - Vincent Garcia
- CNRS, Thales, Université Paris-Saclay, Unité Mixte de Physique, 91767 Palaiseau, France
| | - Dennis Meier
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
| | - Manuel Bibes
- CNRS, Thales, Université Paris-Saclay, Unité Mixte de Physique, 91767 Palaiseau, France
| |
Collapse
|
16
|
Domain-wall pinning and defect ordering in BiFeO 3 probed on the atomic and nanoscale. Nat Commun 2020; 11:1762. [PMID: 32273515 PMCID: PMC7145836 DOI: 10.1038/s41467-020-15595-0] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2019] [Accepted: 03/06/2020] [Indexed: 11/08/2022] Open
Abstract
Electro-mechanical interactions between charged point defects and domain walls play a key role in the functional properties of bulk and thin-film ferroelectrics. While for perovskites the macroscopic implications of the ordering degree of defects on domain-wall pinning have been reported, atomistic details of these mechanisms remain unclear. Here, based on atomic and nanoscale analyses, we propose a pinning mechanism associated with conductive domain walls in BiFeO3, whose origin lies in the dynamic coupling of the p-type defects gathered in the domain-wall regions with domain-wall displacements under applied electric field. Moreover, we confirm that the degree of defect ordering at the walls, which affect the domain-wall conductivity, can be tuned by the cooling rate used during the annealing, allowing us to determine how this ordering affects the atomic structure of the walls. The results are useful in the design of the domain-wall architecture and dynamics for emerging nanoelectronic and bulk applications.
Collapse
|
17
|
Lu H, Tan Y, McConville JPV, Ahmadi Z, Wang B, Conroy M, Moore K, Bangert U, Shield JE, Chen LQ, Gregg JM, Gruverman A. Electrical Tunability of Domain Wall Conductivity in LiNbO 3 Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902890. [PMID: 31588637 DOI: 10.1002/adma.201902890] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Revised: 09/11/2019] [Indexed: 06/10/2023]
Abstract
Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.
Collapse
Affiliation(s)
- Haidong Lu
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588-0299, USA
| | - Yueze Tan
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - James P V McConville
- Centre for Nanostructured Media, School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Zahra Ahmadi
- Department of Mechanical & Materials Engineering, University of Nebraska, Lincoln, NE, 68588-0526, USA
| | - Bo Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Michele Conroy
- Department of Physics, School of Sciences & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Kalani Moore
- Department of Physics, School of Sciences & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Ursel Bangert
- Department of Physics, School of Sciences & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Jeffrey E Shield
- Department of Mechanical & Materials Engineering, University of Nebraska, Lincoln, NE, 68588-0526, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - J Marty Gregg
- Centre for Nanostructured Media, School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588-0299, USA
| |
Collapse
|
18
|
McNulty JA, Tran TT, Halasyamani PS, McCartan SJ, MacLaren I, Gibbs AS, Lim FJY, Turner PW, Gregg JM, Lightfoot P, Morrison FD. An Electronically Driven Improper Ferroelectric: Tungsten Bronzes as Microstructural Analogs for the Hexagonal Manganites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1903620. [PMID: 31389099 DOI: 10.1002/adma.201903620] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Revised: 07/19/2019] [Indexed: 06/10/2023]
Abstract
Since the observation that the properties of ferroic domain walls (DWs) can differ significantly from the bulk materials in which they are formed, it has been realized that domain wall engineering offers exciting new opportunities for nanoelectronics and nanodevice architectures. Here, a novel improper ferroelectric, CsNbW2 O9 , with the hexagonal tungsten bronze structure, is reported. Powder neutron diffraction and symmetry mode analysis indicate that the improper transition (TC = 1100 K) involves unit cell tripling, reminiscent of the hexagonal rare earth manganites. However, in contrast to the manganites, the symmetry breaking in CsNbW2 O9 is electronically driven (i.e., purely displacive) via the second-order Jahn-Teller effect in contrast to the geometrically driven tilt mechanism of the manganites. Nevertheless CsNbW2 O9 displays the same kinds of domain microstructure as those found in the manganites, such as the characteristic six-domain "cloverleaf" vertices and DW sections with polar discontinuities. The discovery of a completely new material system, with domain patterns already known to generate interesting functionality in the manganites, is important for the emerging field of DW nanoelectronics.
Collapse
Affiliation(s)
- Jason A McNulty
- EaStCHEM School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, UK
| | - T Thao Tran
- Department of Chemistry, University of Houston, 3585 Cullen Blvd, 112 Fleming Building, Houston, TX, 77204-5003, USA
| | - P Shiv Halasyamani
- Department of Chemistry, University of Houston, 3585 Cullen Blvd, 112 Fleming Building, Houston, TX, 77204-5003, USA
| | - Shane J McCartan
- School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ian MacLaren
- School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Alexandra S Gibbs
- ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX, UK
| | - Felicia J Y Lim
- School of Mathematics and Physics, Queen's University Belfast, University Rd., Belfast, BT7 1NN, UK
- Department of Mechanical Engineering, University of Sheffield, Sheffield, S3 7QB, UK
| | - Patrick W Turner
- School of Mathematics and Physics, Queen's University Belfast, University Rd., Belfast, BT7 1NN, UK
| | - J Marty Gregg
- School of Mathematics and Physics, Queen's University Belfast, University Rd., Belfast, BT7 1NN, UK
| | - Philip Lightfoot
- EaStCHEM School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, UK
| | - Finlay D Morrison
- EaStCHEM School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, UK
| |
Collapse
|
19
|
Functional Ferroic Domain Walls for Nanoelectronics. MATERIALS 2019; 12:ma12182927. [PMID: 31510049 PMCID: PMC6766344 DOI: 10.3390/ma12182927] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 09/05/2019] [Accepted: 09/06/2019] [Indexed: 11/17/2022]
Abstract
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
Collapse
|
20
|
Gruverman A, Alexe M, Meier D. Piezoresponse force microscopy and nanoferroic phenomena. Nat Commun 2019; 10:1661. [PMID: 30971688 PMCID: PMC6458164 DOI: 10.1038/s41467-019-09650-8] [Citation(s) in RCA: 119] [Impact Index Per Article: 23.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2017] [Accepted: 03/05/2019] [Indexed: 11/23/2022] Open
Abstract
Since its inception more than 25 years ago, Piezoresponse Force Microscopy (PFM) has become one of the mainstream techniques in the field of nanoferroic materials. This review describes the evolution of PFM from an imaging technique to a set of advanced methods, which have played a critical role in launching new areas of ferroic research, such as multiferroic devices and domain wall nanoelectronics. The paper reviews the impact of advanced PFM modes concerning the discovery and scientific understanding of novel nanoferroic phenomena and discusses challenges associated with the correct interpretation of PFM data. In conclusion, it offers an outlook for future trends and developments in PFM.
Collapse
Affiliation(s)
- Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA.
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Dennis Meier
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), N-7034, Trondheim, Norway
| |
Collapse
|
21
|
Schaab J, Skjærvø SH, Krohns S, Dai X, Holtz ME, Cano A, Lilienblum M, Yan Z, Bourret E, Muller DA, Fiebig M, Selbach SM, Meier D. Electrical half-wave rectification at ferroelectric domain walls. NATURE NANOTECHNOLOGY 2018; 13:1028-1034. [PMID: 30201990 DOI: 10.1038/s41565-018-0253-5] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2018] [Accepted: 08/02/2018] [Indexed: 06/08/2023]
Abstract
Domain walls in ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly switch between insulating and conductive domain-wall states, enabling elementary electronic devices such as gates and transistors. To facilitate electrical signal processing and transformation at the domain-wall level, however, an expansion into the realm of alternating-current technology is required. Here, we demonstrate diode-like alternating-to-direct current conversion based on neutral ferroelectric domain walls in ErMnO3. By combining scanning probe and dielectric spectroscopy, we show that the rectification occurs at the tip-wall contact for frequencies at which the walls are effectively pinned. Using density functional theory, we attribute the responsible transport behaviour at the neutral walls to an accumulation of oxygen defects. The practical frequency regime and magnitude of the direct current output are controlled by the bulk conductivity, establishing electrode-wall junctions as versatile atomic-scale diodes.
Collapse
Affiliation(s)
- Jakob Schaab
- Department of Materials, ETH Zurich, Zurich, Switzerland
| | - Sandra H Skjærvø
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway
| | - Stephan Krohns
- Experimental Physics V, University of Augsburg, Augsburg, Germany
| | - Xiaoyu Dai
- Department of Materials, ETH Zurich, Zurich, Switzerland
| | - Megan E Holtz
- School of Applied and Engineering Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - Andrés Cano
- Department of Materials, ETH Zurich, Zurich, Switzerland
- Institut Néel, CNRS & University Grenoble Alpes, Grenoble, France
| | | | - Zewu Yan
- Department of Physics, ETH Zurich, Zurich, Switzerland
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Edith Bourret
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - David A Muller
- School of Applied and Engineering Physics, Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science Cornell University, Ithaca, NY, USA
| | - Manfred Fiebig
- Department of Materials, ETH Zurich, Zurich, Switzerland
| | - Sverre M Selbach
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway
| | - Dennis Meier
- Department of Materials, ETH Zurich, Zurich, Switzerland.
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
| |
Collapse
|
22
|
Turner PW, McConville JPV, McCartan SJ, Campbell MH, Schaab J, McQuaid RGP, Kumar A, Gregg JM. Large Carrier Mobilities in ErMnO 3 Conducting Domain Walls Revealed by Quantitative Hall-Effect Measurements. NANO LETTERS 2018; 18:6381-6386. [PMID: 30207736 DOI: 10.1021/acs.nanolett.8b02742] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Kelvin probe force microscopy (KPFM) has been used to directly and quantitatively measure Hall voltages, developed at conducting tail-to-tail domain walls in ErMnO3 single crystals, when current is driven in the presence of an approximately perpendicular magnetic field. Measurements across a number of walls, taken using two different atomic force microscope platforms, consistently suggest that the active p-type carriers have unusually large room temperature mobilities of the order of hundreds of square centimeters per volt second. Associated carrier densities were estimated to be of the order of 1013 cm-3. Such mobilities, at room temperature, are high in comparison with both bulk oxide conductors and LaAlO3-SrTiO3 sheet conductors. High carrier mobilities are encouraging for the future of domain-wall nanoelectronics and, significantly, also suggest the feasibility of meaningful investigations into dimensional confinement effects in these novel domain-wall systems.
Collapse
Affiliation(s)
- Patrick W Turner
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| | - James P V McConville
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| | - Shane J McCartan
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| | - Michael H Campbell
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| | - Jakob Schaab
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , 8093 Zurich , Switzerland
| | - Ray G P McQuaid
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| | - Amit Kumar
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| | - J Marty Gregg
- Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN
| |
Collapse
|
23
|
Rubio-Marcos F, Del Campo A, Rojas-Hernandez RE, Ramírez MO, Parra R, Ichikawa RU, Ramajo LA, Bausá LE, Fernández JF. Experimental evidence of charged domain walls in lead-free ferroelectric ceramics: light-driven nanodomain switching. NANOSCALE 2018; 10:705-715. [PMID: 29242859 DOI: 10.1039/c7nr04304j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The control of ferroelectric domain walls at the nanometric level leads to novel interfacial properties and functionalities. In particular, the comprehension of charged domain walls, CDWs, lies at the frontier of future nanoelectronic research. Whereas many of the effects have been demonstrated for ideal archetypes, such as single crystals, and/or thin films, a similar control of CDWs on polycrystalline ferroelectrics has not been achieved. Here, we unambiguously show the presence of charged domain walls on a lead-free (K,Na)NbO3 polycrystalline system. The appearance of CDWs is observed in situ by confocal Raman microscopy and second harmonic generation microscopy. CDWs produce an internal strain gradient within each domain. Specifically, the anisotropic strain develops a crucial piece in the ferroelectric domain switching due to the coupling between the polarization of light and the ferroelectric polarization of the nanodomain in the (K,Na)NbO3 ceramic. This effect leads to the tuning of the ferroelectric domain switching by means of the light polarization angle. Our results will help to understand the relevance of charged domain walls on the ferroelectric domain switching process and may facilitate the development of domain wall nanoelectronics by remote light control utilizing polycrystalline ferroelectrics.
Collapse
Affiliation(s)
- Fernando Rubio-Marcos
- Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, Kelsen 5, 28049 Madrid, Spain.
| | | | | | | | | | | | | | | | | |
Collapse
|