Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

Wavelength-tunable high-fidelity entangled photon sources enabled by dual Stark effects

The construction of a large-scale quantum internet requires quantum repeaters containing multiple entangled photon sources with identical wavelengths. Semiconductor quantum dots can generate entangled photon pairs deterministically with high fidelity. However, realizing wavelength-matched quantum-dot entangled photon sources faces two difficulties: the non-uniformity of emission wavelength and exciton fine-structure splitting induced fidelity reduction. Typically, these two factors are not independently tunable, making it challenging to achieve simultaneous improvement. In this work, we demonstrate wavelength-tunable entangled photon sources based on droplet-etched GaAs quantum dots through the combined use of AC and quantum-confined Stark effects. The emission wavelength can be tuned by ~1 meV while preserving an entanglement fidelity f exceeding 0.955(1) in the entire tuning range. Based on this hybrid tuning scheme, we finally demonstrate multiple wavelength-matched entangled photon sources with f > 0.919(3), paving the way towards robust and scalable on-demand entangled photon sources for quantum internet and integrated quantum optical circuits.

A framework for multiexcitonic logic

Exciton science sits at the intersection of chemical, optical and spin-based implementations of information processing, but using excitons to conduct logical operations remains relatively unexplored. Excitons encoding information could be read optically (photoexcitation-photoemission) or electrically (charge recombination-separation), travel through materials via exciton energy transfer, and interact with one another in stimuli-responsive molecular excitonic devices. Excitonic logic offers the potential to mediate electrical, optical and chemical information. Additionally, high-spin triplet and quintet (multi)excitons offer access to well defined spin states of relevance to magnetic field effects, classical spintronics and spin-based quantum information science. In this Roadmap, we propose a framework for developing excitonic computing based on singlet fission (SF) and triplet-triplet annihilation (TTA). Various molecular components capable of modulating SF/TTA for logical operations are suggested, including molecular photo-switching and multi-colour photoexcitation. We then outline a pathway for constructing excitonic logic devices, considering aspects of circuit assembly, logical operation synchronization, and exciton transport and amplification. Promising future directions and challenges are identified, and the potential for realizing excitonic computing in the near future is discussed.

Color-selective three-dimensional polarization structures

Polarization as an important degree of freedom for light plays a key role in optics. Structured beams with controlled polarization profiles have diverse applications, such as information encoding, display, medical and biological imaging, and manipulation of microparticles. However, conventional polarization optics can only realize two-dimensional polarization structures in a transverse plane. The emergent ultrathin optical devices consisting of planar nanostructures, so-called metasurfaces, have shown much promise for polarization manipulation. Here we propose and experimentally demonstrate color-selective three-dimensional (3D) polarization structures with a single metasurface. The geometric metasurfaces are designed based on color and phase multiplexing and polarization rotation, creating various 3D polarization knots. Remarkably, different 3D polarization knots in the same observation region can be achieved by controlling the incident wavelengths, providing unprecedented polarization control with color information in 3D space. Our research findings may be of interest to many practical applications such as vector beam generation, virtual reality, volumetric displays, security, and anti-counterfeiting.

Orientation of Individual Anisotropic Nanocrystals Identified by Polarization Fingerprint

The polarization of photoluminescence emitted from anisotropic nanocrystals directly reflects the symmetry of the eigenstates involved in the recombination process and can thus be considered as a characteristic feature of a nanocrystal. We performed polarization resolved magneto-photoluminescence spectroscopy on single colloidal Mn²⁺:CdSe/CdS core-shell quantum dots of wurtzite crystal symmetry. At zero magnetic field, a distinct linear polarization pattern is observed, while applying a magnetic field enforces circularly polarized emission with a characteristic saturation value below 100%. These polarization features are shown to act as a specific fingerprint of each individual nanocrystal. A model considering the orientation of the crystal c⃗ axis with respect to the optical axis and the magnetic field and taking into account the impact of magnetic doping is introduced and quantitatively explains our findings. We demonstrate that a careful analysis of the polarization state of single nanocrystal emission using the full set of Stokes parameters allows for identification of the complete three-dimensional orientation of the crystal anisotropy axis of an individual nanoobject in lab coordinates.

Probing Permanent Dipole Moments and Removing Exciton Fine Structures in Single Perovskite Nanocrystals by an Electric Field

Single perovskite nanocrystals have emerged as a novel type of semiconductor nanostructure capable of emitting single photons with rich exciton species and fine energy-level structures. Here we focus on single excitons and biexcitons in single perovskite CsPbI_{3} nanocrystals to show, for the first time, how their optical properties are modulated by an external electric field at the cryogenic temperature. The electric field can cause a blueshift in the photoluminescence peak of single excitons, from which the existence of a permanent dipole moment can be deduced. Meanwhile, the fine energy-level structures of single excitons and biexcitons in a single CsPbI_{3} nanocrystal can be simultaneously eliminated, thus preparing a potent platform for the potential generation of polarization-entangled photon pairs.

Effects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dots

Entangled photon pair generation is a crucial task for development of quantum information based technologies, and production of entangled pairs by biexciton cascade decays in semiconductor quantum dots is so far one of the most advanced techniques to achieve it. However, its scalability toward massive implementation requires further understanding and better tuning mechanisms to suppress the fine structure splitting between polarized exciton states, which persists as a major obstacle for entanglement generation from most quantum dot samples. In this work, the influence of electrostatic environment arising from electrically biased electrodes and/or charged impurities on the fine structure splitting of GaAs/AlGaAs droplet epitaxial quantum dots is studied, by means of numerical simulations considering a realistic quantum dot confining potential and electron-hole exchange interaction within a multiband k · p framework. We find that reduction of the fine structure splitting can be substantially optimized by tilting the field and seeding impurities along the droplet elongation axis. Furthermore, our results provide evidence of how the presence of charged impurities and in-plane bias components, may account for different degrees of splitting manipulation in dots with similar shape, size and growth conditions.

Chem/bio sensing with non-classical light and integrated photonics

Modern quantum technology currently experiences extensive advances in applicability in communications, cryptography, computing, metrology and lithography. Harnessing this technology platform for chem/bio sensing scenarios is an appealing opportunity enabling ultra-sensitive detection schemes. This is further facilliated by the progress in fabrication, miniaturization and integration of visible and infrared quantum photonics. Especially, the combination of efficient single-photon sources together with waveguiding/sensing structures, serving as active optical transducer, as well as advanced detector materials is promising integrated quantum photonic chem/bio sensors. Besides the intrinsic molecular selectivity and non-destructive character of visible and infrared light based sensing schemes, chem/bio sensors taking advantage of non-classical light sources promise sensitivities beyond the standard quantum limit. In the present review, recent achievements towards on-chip chem/bio quantum photonic sensing platforms based on N00N states are discussed along with appropriate recognition chemistries, facilitating the detection of relevant (bio)analytes at ultra-trace concentration levels. After evaluating recent developments in this field, a perspective for a potentially promising sensor testbed is discussed for reaching integrated quantum sensing with two fiber-coupled GaAs chips together with semiconductor quantum dots serving as single-photon sources.

Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry

Here, we investigate the stoichiometry control of GaAs/Al0.3Ga0.7As droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown "strain-free" QDs using state-of-the-art atomic-scale energy-dispersive X-ray spectroscopy based on transmission electron microscopy. Precise systematic analyses demonstrate a successful quenching of the nonstoichiometry below 2%. The control of the chemical reactions with well-controlled ex situ annealing sheds light on the engineering of a novel single-photon source of strain-free DE QDs free of defects.

Fine structure of excitons and electron-hole exchange energy in polymorphic CsPbBr3 single nanocrystals

All inorganic CsPbX3 (X = Cl, Br, I) nanocrystals (NCs) belong to the novel class of confined metal-halide perovskites which are currently arousing enthusiasm and stimulating huge activity across several fields of optoelectronics due to outstanding properties. A deep knowledge of the band-edge excitonic properties of these materials is thus crucial to further optimize their performances. Here, high-resolution photoluminescence (PL) spectroscopy of single bromide-based NCs reveals the exciton fine structure in the form of sharp peaks that are linearly polarized and grouped in doublets or triplets, which directly mirror the adopted crystalline structure, tetragonal (D4h symmetry) or orthorhombic (D2h symmetry). Intelligible equations are found that show how the fundamental parameters (spin-orbit coupling, ΔSO, crystal field term, T, and electron-hole exchange energy, J) rule the energy spacings in doublets and triplets. From experimental data, fine estimations of each parameter are obtained. The analysis of the absorption spectra of an ensemble of NCs with a "quasi-bulk" behavior leads to ΔSO = 1.20 ± 0.06 eV and T = -0.34 ± 0.05 eV in CsPbBr3. The study of individual luminescence responses of NCs having sizes comparable to the exciton Bohr diameter, 7 nm, allows us to estimate the value of J to be around ≈3 meV in both tetragonal and orthorhombic phases. This value is already enhanced by confinement.

Bright-Exciton Fine-Structure Splittings in Single Perovskite Nanocrystals

Here we show that, in single perovskite CsPbI_{3} nanocrystals synthesized from a colloidal approach, a bright-exciton fine-structure splitting as large as hundreds of μeV can be resolved with two orthogonally and linearly polarized photoluminescence peaks. This doublet could switch to a single peak when a single CsPbI_{3} nanocrystal is photocharged to eliminate the electron-hole exchange interaction. The above findings have prepared an efficient platform suitable for probing exciton and spin dynamics of semiconductor nanostructures at the visible-wavelength range, from which a variety of practical applications such as in entangled photon-pair source and quantum information processing can be envisioned.

Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions

Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization-entangled photon pairs. Despite remarkable progress in the past 20 years, many challenges still remain for this material, such as the extremely low yield, the low degree of entanglement and the large wavelength distribution. Here, we show that with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement and ultra-narrow wavelength distribution at rubidium transitions. Therefore, this material system is an attractive candidate for the realization of a solid-state quantum repeater-among many other key enabling quantum photonic elements.

Electric-Field-Induced Energy Tuning of On-Demand Entangled-Photon Emission from Self-Assembled Quantum Dots

We explore a method to achieve electrical control over the energy of on-demand entangled-photon emission from self-assembled quantum dots (QDs). The device used in our work consists of an electrically tunable diode-like membrane integrated onto a piezoactuator, which is capable of exerting a uniaxial stress on QDs. We theoretically reveal that, through application of the quantum-confined Stark effect to QDs by a vertical electric field, the critical uniaxial stress used to eliminate the fine structure splitting of QDs can be linearly tuned. This feature allows experimental realization of a triggered source of energy-tunable entangled-photon emission. Our demonstration represents an important step toward realization of a solid-state quantum repeater using indistinguishable entangled photons in Bell state measurements.

Effects of photo-neutralization on the emission properties of quantum dots

In this paper we investigate the coherence properties of a quantum dot used as photon pair source, under two-photon resonant excitation in combination with an additional photo-neutralization laser. The photo-neutralization increases the efficiency of the excitation process and thus, the brightness of the source, by a factor of approximately 1.5 for biexciton-exciton pairs. This enhancement does not degrade the relevant coherences in the system; neither the single photon coherence time, nor the coherence of the excitation process.

Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution. Here, we demonstrate in principle that IEPPs in the telecom band can be created by combining a single QD-NW and a nonlinear crystal waveguide. The QD-NW system serves as the single photon source, and the emitted visible single photons are split into IEPPs at approximately 1.55 μm through the process of spontaneous parametric down conversion (SPDC) in a periodically poled lithium niobate (PPLN) waveguide. The compatibility of the QD-PPLN interface is the determinant factor in constructing this novel hybrid-quantum-emitter (HQE). Benefiting from the desirable optical properties of QD-NWs and the extremely high nonlinear conversion efficiency of PPLN waveguides, we successfully generate IEPPs in the telecom band with the polarization degree of freedom. The entanglement of the generated photon pairs is confirmed by the entanglement witness. Our experiment paves the way to producing HQEs inheriting the advantages of multiple systems.

Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots

Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots

Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

Intrinsic circular polarization in centrosymmetric stacks of transition-metal dichalcogenide compounds

The circular polarization (CP) that the photoluminescence inherits from the excitation source in n monolayers of transition-metal dichalcogenides (MX_{2})_{n} has been previously explained as a special feature of odd values of n, where the inversion symmetry is absent. This "valley polarization" effect results from the fact that, in the absence of inversion symmetry, charge carriers in different band valleys could be selectively excited by different circular polarized light. Although several experiments observed CP in centrosymmetric MX_{2} systems, e.g., for bilayer MX_{2}, they were dismissed as being due to some extrinsic sample irregularities. Here we show that also for n=even, where inversion symmetry is present and valley polarization physics is strictly absent, such intrinsic selectivity in CP is to be expected on the basis of fundamental spin-orbit physics. First-principles calculations of CP predict significant polarization for n=2 bilayers: from 69% in MoS_{2} to 93% in WS_{2}. This realization could broaden the range of materials to be considered as CP sources.

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor

Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenide monolayers (TMD 1Ls), have attracted increasing attention owing to the underlying fundamental physics (e.g., many body effects) and the promising optoelectronic applications such as light-emitting diodes. Though much progress has been made, intrinsic excitonic states of TMD 1Ls are still highly debated in theory, which thirsts for direct experimental determination. Here, we report unconventional emission and excitonic fine structure in 1L WS2 revealed by electrical doping and photoexcitation, which reflects the interplay of exciton, trion, and other excitonic states. Tunable excitonic emission has been realized in a controllable manner via electrical and/or optical injection of charge carriers. Remarkably enough, the superlinear (i.e., quadratic) emission is unambiguously observed which is attributed to biexciton states, indicating the strong Coulomb interactions in such a 2D material. In a nearly neutral 1L WS2, trions and biexcitons possess large binding energies of ∼ 10-15 and 45 meV, respectively. Moreover, our finding of electrically induced robust emission opens up a possibility to boost the luminous efficiency of emerging 1L TMD light emitting diodes.

The role of phonons for exciton and biexciton generation in an optically driven quantum dot

For many applications of semiconductor quantum dots in quantum technology, well-controlled state preparation of the quantum dot states is mandatory. Since quantum dots are embedded in the semiconductor matrix, their interaction with phonons often plays a major role in the preparation process. In this review, we discuss the influence of phonons on three basically different optical excitation schemes that can be used for the preparation of exciton, biexciton and superposition states: a resonant excitation leading to Rabi rotations in the excitonic system, an excitation with chirped pulses exploiting the effect of adiabatic rapid passage and an off-resonant excitation giving rise to a phonon-assisted state preparation. We give an overview of experimental and theoretical results, showing the role of phonons and compare the performance of the schemes for state preparation.

Time-bin entangled photons from a quantum dot

Long-distance quantum communication is one of the prime goals in the field of quantum information science. With information encoded in the quantum state of photons, existing telecommunication fibre networks can be effectively used as a transport medium. To achieve this goal, a source of robust entangled single-photon pairs is required. Here we report the realization of a source of time-bin entangled photon pairs utilizing the biexciton-exciton cascade in a III/V self-assembled quantum dot. We analyse the generated photon pairs by an inherently phase-stable interferometry technique, facilitating uninterrupted long integration times. We confirm the entanglement by performing quantum state tomography of the emitted photons, which yields a fidelity of 0.69(3) and a concurrence of 0.41(6) for our realization of time-energy entanglement from a single quantum emitter.

Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices

Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform, a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but a fine-structure splitting (FSS) between the bright exciton states lowers dramatically the degree of entanglement of the sources and hampers severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of photon pairs featuring the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75 ± 0.02. Furthermore, we study the evolution of Bell's parameters as a function of FSS and demonstrate for the first time that filtering-free violation of Bell's inequalities requires the FSS to be smaller than 1 μeV. This upper limit for the FSS also sets the tuning range of exciton energies (∼1 meV) over which our device operates as an energy-tunable source of highly entangled photons. A moderate temporal filtering further increases the concurrence and the tunability of exciton energies up to 0.82 and 2 meV, respectively, though at the expense of 60% reduction of count rate.