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Taniguchi T, Timmerman D, Ichikawa S, Tatebayashi J, Fujiwara Y. Electrically driven europium-doped GaN microdisk. OPTICS LETTERS 2023; 48:4590-4592. [PMID: 37656562 DOI: 10.1364/ol.494616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 08/05/2023] [Indexed: 09/03/2023]
Abstract
For the practical implementation of microdisk resonators as active nanophotonic devices, it is essential that they can be electrically driven. However, it is difficult to inject current in such small-scale devices without severely degrading their optical properties. We demonstrate the successful fabrication of an electrically injected microdisk based on Eu-doped GaN, in which an SiO2 spacer is used to prevent the interaction of the metal contact with the optical resonances. The microdisk shows Eu-related emission upon electrical injection and from the observed resonance peak, a cavity quality (Q)-factor of 3400 is concluded.
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2
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Ren Y, Li P, Liu Z, Chen Z, Chen YL, Peng C, Liu J. Low-threshold nanolasers based on miniaturized bound states in the continuum. SCIENCE ADVANCES 2022; 8:eade8817. [PMID: 36563161 PMCID: PMC9788758 DOI: 10.1126/sciadv.ade8817] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Accepted: 11/29/2022] [Indexed: 06/17/2023]
Abstract
The pursuit of compact lasers with low thresholds has imposed strict requirements on tight light confinements with minimized radiation losses. Bound states in the continuum (BICs) have been recently demonstrated as an effective mechanism to trap light. However, most reported BIC lasers are still bulky due to the absence of in-plane light confinement. Here, we combine BICs and photonic bandgaps to realize three-dimensional light confinements, as referred to miniaturized BICs (mini-BICs). We demonstrate highly compact active mini-BIC resonators with a record high-quality (Q) factor of up to 32,500, which enables single-mode lasing with the lowest threshold of 80 W/cm2 among the reported BIC lasers. In addition, photon statistics measurements further confirm the occurrence of the stimulated emission in our devices. Our work reveals a path toward compact BIC lasers with ultralow power consumption and potentially boosts the applications in cavity quantum electrodynamics, nonlinear optics, and integrated photonics.
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Affiliation(s)
- Yuhao Ren
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Peishen Li
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Zhuojun Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zihao Chen
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - You-Ling Chen
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Chao Peng
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
- Peng Cheng Laboratory, Shenzhen 518055, China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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3
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Kim MW, Park SW, Park KT, Min BJ, Ku JH, Ko JY, Choi JS, No YS. All-Graphene-Contact Electrically Pumped On-Demand Transferrable Nanowire Source. NANO LETTERS 2022; 22:1316-1323. [PMID: 35049311 DOI: 10.1021/acs.nanolett.1c04622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
On-demand NW light sources in a photonic integrated circuit (PIC) have faced several practical challenges. Here, we report on an all-graphene-contact, electrically pumped, on-demand transferrable NW source that is fabricated by implementing an all-graphene-contact approach in combination with a highly accurate microtransfer printing technique. A vertically p-i-n-doped top-down-fabricated semiconductor NW with optical gain structures is electrically pumped through the patterned multilayered graphene contacts. Electroluminescence (EL) spectroscopy results reveal that the electrically driven NW device exhibits strong EL emission between the contacts and displays waveguiding properties. Further, a single NW device is precisely integrated into an existing photonic waveguide to perform light coupling and waveguiding experiments. Three-dimensional numerical simulation results show a good agreement with experimental observations. We believe that our all-graphene-contact approach is readily applicable to various micro/nanostructures and devices, which facilitates stable electrical operation and thus extends their practical applicability in compact integrated circuits.
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Affiliation(s)
- Min-Woo Kim
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Sun-Wook Park
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Kyong-Tae Park
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Byung-Ju Min
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Ja-Hyun Ku
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Jin-Yong Ko
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Jin Sik Choi
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - You-Shin No
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
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4
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Room temperature electrically pumped topological insulator lasers. Nat Commun 2021; 12:3434. [PMID: 34103519 PMCID: PMC8187422 DOI: 10.1038/s41467-021-23718-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2020] [Accepted: 04/20/2021] [Indexed: 11/08/2022] Open
Abstract
Topological insulator lasers (TILs) are a recently introduced family of lasing arrays in which phase locking is achieved through synthetic gauge fields. These single frequency light source arrays operate in the spatially extended edge modes of topologically non-trivial optical lattices. Because of the inherent robustness of topological modes against perturbations and defects, such topological insulator lasers tend to demonstrate higher slope efficiencies as compared to their topologically trivial counterparts. So far, magnetic and non-magnetic optically pumped topological laser arrays as well as electrically pumped TILs that are operating at cryogenic temperatures have been demonstrated. Here we present the first room temperature and electrically pumped topological insulator laser. This laser array, using a structure that mimics the quantum spin Hall effect for photons, generates light at telecom wavelengths and exhibits single frequency emission. Our work is expected to lead to further developments in laser science and technology, while opening up new possibilities in topological photonics.
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5
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Cong H, Yang F, Xue C, Yu K, Zhou L, Wang N, Cheng B, Wang Q. Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1704414. [PMID: 29611368 DOI: 10.1002/smll.201704414] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2017] [Revised: 02/14/2018] [Indexed: 06/08/2023]
Abstract
The problem of light source always prevents silicon-based photonics from achieving a final integration. Although some optical pump lasers have been reported in recent years, an electrical pumping laser is considered as the ultimate solution. To fabricate a Si-based laser, there are some crucial obstacles that need to be solved such as difficulties in material epitaxy, light absorption by metal electrodes, and compatibility with the existing complementary metal-oxide-semiconductor transistor process. Here, a multilayer graphene and GeSn/Ge quantum well (QW) heterostructure is designed and fabricated as a Si-based light source. Specially designed Ge0.9 Sn0.1 /Ge QWs are used as active layer, which achieves a photoluminescence (PL) peak at 2050 nm. Graphene, which has a high transmittance for all bands of light, lessens the burden of growing thick cladding layer and perfectly breaks the deadlock of light disappearance in metal contacts. The electroluminescence (EL) spectrum of the device is achieved at a peak of 2100 nm under an injection current density of 100 A cm-2 . Both the PL and EL measurements show the heterostructure has good performance as a short-wave infrared (SWIR) light source. Therefore, the results provides a good alternative for the light source in silicon-based photonics.
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Affiliation(s)
- Hui Cong
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fan Yang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chunlai Xue
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Kai Yu
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lin Zhou
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Nan Wang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Buwen Cheng
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qiming Wang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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6
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Feng M, He J, Sun Q, Gao H, Li Z, Zhou Y, Liu J, Zhang S, Li D, Zhang L, Sun X, Li D, Wang H, Ikeda M, Wang R, Yang H. Room-temperature electrically pumped InGaN-based microdisk laser grown on Si. OPTICS EXPRESS 2018; 26:5043-5051. [PMID: 29475346 DOI: 10.1364/oe.26.005043] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2017] [Accepted: 02/10/2018] [Indexed: 06/08/2023]
Abstract
Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature.
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7
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Totero Gongora JS, Miroshnichenko AE, Kivshar YS, Fratalocchi A. Anapole nanolasers for mode-locking and ultrafast pulse generation. Nat Commun 2017; 8:15535. [PMID: 28561017 PMCID: PMC5460025 DOI: 10.1038/ncomms15535] [Citation(s) in RCA: 61] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2016] [Accepted: 04/02/2017] [Indexed: 12/11/2022] Open
Abstract
Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.
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Affiliation(s)
- Juan S Totero Gongora
- PRIMALIGHT, Faculty of Electrical Engineering, Applied Mathematics and Computational Science, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Andrey E Miroshnichenko
- Nonlinear Physics Centre, Research School for Physics and Engineering, Australian National University, Canberra Australian Capital Territory 0200, Australia
| | - Yuri S Kivshar
- Nonlinear Physics Centre, Research School for Physics and Engineering, Australian National University, Canberra Australian Capital Territory 0200, Australia
| | - Andrea Fratalocchi
- PRIMALIGHT, Faculty of Electrical Engineering, Applied Mathematics and Computational Science, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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8
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Hwang MS, Kim HR, Kim KH, Jeong KY, Park JS, Choi JH, Kang JH, Lee JM, Park WI, Song JH, Seo MK, Park HG. Switching of Photonic Crystal Lasers by Graphene. NANO LETTERS 2017; 17:1892-1898. [PMID: 28165745 DOI: 10.1021/acs.nanolett.6b05207] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Unique features of graphene have motivated the development of graphene-integrated photonic devices. In particular, the electrical tunability of graphene loss enables high-speed modulation of light and tuning of cavity resonances in graphene-integrated waveguides and cavities. However, efficient control of light emission such as lasing, using graphene, remains a challenge. In this work, we demonstrate on/off switching of single- and double-cavity photonic crystal lasers by electrical gating of a monolayer graphene sheet on top of photonic crystal cavities. The optical loss of graphene was controlled by varying the gate voltage Vg, with the ion gel atop the graphene sheet. First, the fundamental properties of graphene were investigated through the transmittance measurement and numerical simulations. Next, optically pumped lasing was demonstrated for a graphene-integrated single photonic crystal cavity at Vg below -0.6 V, exhibiting a low lasing threshold of ∼480 μW, whereas lasing was not observed at Vg above -0.6 V owing to the intrinsic optical loss of graphene. Changing quality factor of the graphene-integrated photonic crystal cavity enables or disables the lasing operation. Moreover, in the double-cavity photonic crystal lasers with graphene, switching of individual cavities with separate graphene sheets was achieved, and these two lasing actions were controlled independently despite the close distance of ∼2.2 μm between adjacent cavities. We believe that our simple and practical approach for switching in graphene-integrated active photonic devices will pave the way toward designing high-contrast and ultracompact photonic integrated circuits.
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Affiliation(s)
- Min-Soo Hwang
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Kyoung-Ho Kim
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Jin-Sung Park
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Jae-Hyuck Choi
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Ju-Hyung Kang
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
| | - Jung Min Lee
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
- Division of Materials Science and Engineering, Hanyang University , Seoul 04763, Republic of Korea
| | - Won Il Park
- Division of Materials Science and Engineering, Hanyang University , Seoul 04763, Republic of Korea
| | - Jung-Hwan Song
- Department of Physics and Institute for the NanoCentury, KAIST , Daejeon 34141, Republic of Korea
| | - Min-Kyo Seo
- Department of Physics and Institute for the NanoCentury, KAIST , Daejeon 34141, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University , Seoul 02842, Republic of Korea
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9
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Cho SH, Kwon SS, Yi J, Park WI. Chemical and biological sensors based on defect-engineered graphene mesh field-effect transistors. NANO CONVERGENCE 2016; 3:14. [PMID: 28191424 PMCID: PMC5271147 DOI: 10.1186/s40580-016-0075-9] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2016] [Accepted: 05/26/2016] [Indexed: 05/26/2023]
Abstract
Graphene has been intensively studied for applications to high-performance sensors, but the sensing characteristics of graphene devices have varied from case to case, and the sensing mechanism has not been satisfactorily determined thus far. In this review, we describe recent progress in engineering of the defects in graphene grown by a silica-assisted chemical vapor deposition technique and elucidate the effect of the defects upon the electrical response of graphene sensors. This review provides guidelines for engineering and/or passivating defects to improve sensor performance and reliability.
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Affiliation(s)
- Seunghee H. Cho
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763 South Korea
| | - Sun Sang Kwon
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763 South Korea
| | - Jaeseok Yi
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763 South Korea
| | - Won Il Park
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763 South Korea
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10
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Liao Q, Hu K, Zhang H, Wang X, Yao J, Fu H. Perovskite Microdisk Microlasers Self-Assembled from Solution. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3405-10. [PMID: 25903387 DOI: 10.1002/adma.201500449] [Citation(s) in RCA: 68] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2015] [Revised: 03/21/2015] [Indexed: 05/23/2023]
Affiliation(s)
- Qing Liao
- Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Ke Hu
- Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Haihua Zhang
- Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
| | - Xuedong Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jiannian Yao
- Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hongbing Fu
- Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, P. R. China
- Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, P. R. China
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11
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Athanasiou M, Smith R, Liu B, Wang T. Room temperature continuous-wave green lasing from an InGaN microdisk on silicon. Sci Rep 2014; 4:7250. [PMID: 25431166 PMCID: PMC4246202 DOI: 10.1038/srep07250] [Citation(s) in RCA: 41] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2014] [Accepted: 11/13/2014] [Indexed: 11/10/2022] Open
Abstract
Optically pumped green lasing with an ultra low threshold has been achieved using an InGaN/GaN based micro-disk with an undercut structure on silicon substrates. The micro-disks with a diameter of around 1 μm were fabricated by means of a combination of a cost-effective silica micro-sphere approach, dry-etching and subsequent chemical etching. The combination of these techniques both minimises the roughness of the sidewalls of the micro-disks and also produces excellent circular geometry. Utilizing this fabrication process, lasing has been achieved at room temperature under optical pumping from a continuous-wave laser diode. The threshold for lasing is as low as 1 kW/cm(2). Time-resolved micro photoluminescence (PL) and confocal PL measurements have been performed in order to further confirm the lasing action in whispering gallery modes and also investigate the excitonic recombination dynamics of the lasing.
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Affiliation(s)
- M Athanasiou
- Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
| | - R Smith
- Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
| | - B Liu
- Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
| | - T Wang
- Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
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12
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Lee JH, Choi SH, Patole SP, Jang Y, Heo K, Joo WJ, Yoo JB, Hwang SW, Whang D. Reliability enhancement of germanium nanowires using graphene as a protective layer: aspect of thermal stability. ACS APPLIED MATERIALS & INTERFACES 2014; 6:5069-5074. [PMID: 24617670 DOI: 10.1021/am5001294] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We synthesized thermally stable graphene-covered Ge (Ge@G) nanowires and applied them in field emission devices. Vertically aligned Ge@G nanowires were prepared by sequential growth of the Ge nanowires and graphene shells in a single chamber. As a result of the thermal treatment experiments, Ge@G nanowires were much more stable than pure Ge nanowires, maintaining their shape at high temperatures up to 850 °C. In addition, field emission devices based on the Ge@G nanowires clearly exhibited enhanced thermal reliability. Moreover, field emission characteristics yielded the highest field enhancement factor (∼2298) yet reported for this type of device, and also had low turn-on voltage. Our proposed approach for the application of graphene as a protective layer for a semiconductor nanowire is an efficient way to enhance the thermal reliability of nanomaterials.
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Affiliation(s)
- Jae-Hyun Lee
- SKKU Advanced Institute of Nanotechnology, School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea
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13
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Kwon SH, No YS, Park HG. Design of plasmonic cavities. NANO CONVERGENCE 2014; 1:8. [PMID: 28191391 PMCID: PMC5270996 DOI: 10.1186/s40580-014-0008-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2013] [Accepted: 12/16/2013] [Indexed: 06/04/2023]
Abstract
In this review paper, we introduce the unique optical properties of high-quality, fully three-dimensional, subwavelength-scale plasmonic cavities. Surface-plasmon-polaritons excited at dielectric-metal interfaces are strongly confined in such cavities. The field profiles of plasmonic modes, their temperature-dependent quality factors, and subwavelength mode volumes are calculated and analyzed systematically using three-dimensional finite-difference time-domain simulations. Reasonable design of high-quality plasmonic cavities opens an opportunity to demonstrate novel plasmonic lasers enabling the further miniaturization of coherent light sources for use in ultra-compact photonic integrated circuits.
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Affiliation(s)
- Soon-Hong Kwon
- Department of Physics, Chung-Ang University, Seoul, 156-756 Republic of Korea
| | - You-Shin No
- Department of Physics, Korea University, Seoul, 136-701 Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul, 136-701 Republic of Korea
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14
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Li D, Stockman MI. Electric spaser in the extreme quantum limit. PHYSICAL REVIEW LETTERS 2013; 110:106803. [PMID: 23521278 DOI: 10.1103/physrevlett.110.106803] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2012] [Indexed: 06/01/2023]
Abstract
We consider theoretically the spaser that is excited electrically via a nanowire with ballistic quantum conductance. We show that, in the extreme quantum regime, i.e., for a single conductance-quantum nanowire, the spaser with a core made of common plasmonic metals, such as silver and gold, is fundamentally possible. For ballistic nanowires with multiple-quanta or nonquantized conductance, the performance of the spaser is enhanced in comparison with the extreme quantum limit. The electrically pumped spaser is promising as an optical source, nanoamplifier, and digital logic device for optoelectronic information processing with a speed of ~100 GHz to ~100 THz.
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Affiliation(s)
- Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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15
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Kumar P. Laser flash synthesis of graphene and its inorganic analogues: An innovative breakthrough with immense promise. RSC Adv 2013. [DOI: 10.1039/c3ra41149d] [Citation(s) in RCA: 66] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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