Polymorphism of dislocation core structures at the atomic scale

First-principles calculations on dislocations in MgO

While ceramic materials are widely used in our society, their understanding of the plasticity is not fully understood. MgO is one of the prototypical ceramics, extensively investigated experimentally and theoretically. However, there is still controversy over whether edge or screw dislocations glide more easily. In this study, we directly model the atomic structures of the dislocation cores in MgO based on the first-principles calculations and estimate the Peierls stresses. Our results reveal that the screw dislocation on the primary slip system exhibits a smaller Peierls stress than the edge dislocation. The tendency is not consistent with metals, but rather with TiN, suggesting a characteristic inherent to rock-salt type materials.

Sub-nanometer-scale mapping of crystal orientation and depth-dependent structure of dislocation cores in SrTiO3

Defects in crystals play a fundamental role in modulating mechanical, electrical, luminescent, and magnetic behaviors of materials. However, accurate measurement of defect structures is hindered by symmetry breaking and the corresponding complex modifications in atomic configuration and/or crystal tilt at the defects. Here, we report the deep-sub-angstrom resolution imaging of dislocation cores via multislice electron ptychography with adaptive propagator, which allows sub-nanometer scale mapping of crystal tilt in the vicinity of dislocation cores and simultaneous recovery of depth-dependent atomic structure of dislocations. The realization of deep-sub-angstrom resolution and depth-dependent imaging of defects shows great potential in revealing microstructures and properties of real materials and devices.

Engineering of atomic-scale flexoelectricity at grain boundaries

Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the electrical polarization response to mechanical strain gradients that is not restricted by the symmetry of materials. However, large elastic deformation is usually difficult to achieve in most solids, and the strain gradient at minuscule is challenging to control. Here, we exploit the exotic structural inhomogeneity of grain boundary to achieve a huge strain gradient (~1.2 nm-1) within 3-4-unit cells, and thus obtain atomic-scale flexoelectric polarization of up to ~38 μC cm-2 at a 24° LaAlO3 grain boundary. Accompanied by the generation of the nanoscale flexoelectricity, the electronic structures of grain boundaries also become different. Hence, the flexoelectric effect at grain boundaries is essential to understand the electrical activities of oxide ceramics. We further demonstrate that for different materials, altering the misorientation angles of grain boundaries enables tunable strain gradients at the atomic scale. The engineering of grain boundaries thus provides a general and feasible pathway to achieve tunable flexoelectricity.

Unveiling the Electronic Structure of Grain Boundaries in Anatase with Electron Microscopy and First-Principles Modeling

Polycrystalline anatase titanium dioxide has drawn great interest, because of its potential applications in high-efficiency photovoltaics and photocatalysts. There has been speculation on the electronic properties of grain boundaries but little direct evidence, because grain boundaries in anatase are challenging to probe experimentally and to model. We present a combined experimental and theoretical study of anatase grain boundaries that have been fabricated by epitaxial growth on a bicrystalline substrate, allowing accurate atomic-scale models to be determined. The electronic structure in the vicinity of stoichiometric grain boundaries is relatively benign to device performance but segregation of oxygen vacancies introduces barriers to electron transport, because of the development of a space charge region. An intrinsically oxygen-deficient boundary exhibits charge trapping consistent with electron energy loss spectroscopy measurements. We discuss strategies for the synthesis of polycrystalline anatase in order to minimize the formation of such deleterious grain boundaries.

Quantitative prediction of grain boundary thermal conductivities from local atomic environments

Quantifying the dependence of thermal conductivity on grain boundary (GB) structure is critical for controlling nanoscale thermal transport in many technologically important materials. A major obstacle to determining such a relationship is the lack of a robust and physically intuitive structure descriptor capable of distinguishing between disparate GB structures. We demonstrate that a microscopic structure metric, the local distortion factor, correlates well with atomically decomposed thermal conductivities obtained from perturbed molecular dynamics for a wide variety of MgO GBs. Based on this correlation, a model for accurately predicting thermal conductivity of GBs is constructed using machine learning techniques. The model reveals that small distortions to local atomic environments are sufficient to reduce overall thermal conductivity dramatically. The method developed should enable more precise design of next-generation thermal materials as it allows GB structures exhibiting the desired thermal transport behaviour to be identified with small computational overhead.

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride

Precise control and in-depth understanding of the interfaces are crucial for the functionality-oriented material design with desired properties. Herein, via modifying the long-standing bicrystal strategy, we proposed a novel nanowelding approach to build up interfaces between two-dimensional (2D) materials with atomic precision. This method enabled us, for the first time, to experimentally achieve the quasi-full-parameter-space grain boundaries (GBs) in 2D hexagonal boron nitride (h-BN). It further helps us unravel the long-term controversy and confusion on the registry of GBs in h-BN, including (i) discriminate the relative contribution of the strain and chemical energy on the registry of GBs; (ii) identify a new dislocation core-Frank partial dislocation and four new antiphase boundaries; and (iii) confirm the universal GB faceting. Our work provides a new paradigm to the exploitation of structural-property correlation of interfaces in 2D materials.

Detwinning Mechanism for Nanotwinned Cubic Boron Nitride with Unprecedented Strength: A First-Principles Study

Synthesized nanotwinned cubic boron nitride (nt-cBN) and nanotwinned diamond (nt-diamond) exhibit extremely high hardness and excellent stability, in which nanotwinned structure plays a crucial role. Here we reveal by first-principles calculations a strengthening mechanism of detwinning, which is induced by partial slip on a glide-set plane. We found that continuous partial slip in the nanotwinned structure under large shear strain can effectively delay the structural graphitization and promote the phase transition from twin structure to cubic structure, which helps to increase the maximum strain range and peak stress. Moreover, ab initio molecular dynamics simulation reveals a stabilization mechanism for nanotwin. These results can help us to understand the unprecedented strength and stability arising from the twin boundaries.

High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures

Despite extensive studies on emerging thermoelectric material SnSe, its n-type form is largely underdeveloped mainly due to the difficulty in stabilizing the carrier concentration at the optimal level. Here, we dually introduce Cl and PbSe to induce n-type conduction in intrinsic p-type SnSe. PbSe alloying enhances the power factor and suppresses lattice thermal conductivity at the same time, giving a highest thermoelectric figure of merit ZT of 1.2 at 823 K for n-type polycrystalline SnSe materials. The best composition is Sn_0.90Pb_0.15Se_0.95Cl_0.05. Samples prepared by the solid-state reaction show a high maximum ZT ( ZT_max) ∼1.1 and ∼0.8 parallel and perpendicular to the press direction of spark plasma sintering, respectively. Remarkably, post-ball milling and annealing processes considerably reduce structural anisotropy, thereby leading to a ZT_max ∼1.2 along both the directions. Hence, the direction giving a ZT_max is controllable for this system using the specialized preparation methods for specimens. Spherical aberration-corrected scanning transmission electron microscopic analyses reveal the presence of heavily dense edge dislocations and strain fields, not observed in the p-type counterparts, which contribute to decreasing lattice thermal conductivity. Our theoretical calculations employing a Callaway-Debye model support the experimental results for thermal transport and microscopic structures.

Quantized dislocations

A dislocation, just like a phonon, is a type of atomic lattice displacement but subject to an extra topological constraint. However, unlike the phonon which has been quantized for decades, the dislocation has long remained classical. This article is a comprehensive review of the recent progress on quantized dislocations, aka the 'dislon' theory. Since the dislon utilizes quantum field theory to solve materials defects problems, we adopt a pedagogical approach to facilitate understanding for both materials science and condensed matter communities. After introducing a few preliminary concepts of dislocations, we focus on the necessity and pathways of dislocation's quantization in great detail, followed by the interaction mechanism between the dislon and materials electronic and phononic degrees of freedom. We emphasize the formality, the new phenomena, and the predictive power. Imagine the leap from classical lattice wave to quantized phonon; the dislon theory may open up vast opportunities to compute dislocated materials at a full quantum many-body level.

Synthesis and Gas-Sensing Property of Highly Self-assembled Tungsten Oxide Nanosheets

We report the synthesis of tungsten oxide (WO₃) nanosheets using a simple yet efficient hydrothermal technique free of surfactantand template. The WO₃ nano-sheets are self-assembled as well to form ordered one-dimensional chain nanostructure. A comprehensive microscopic characterization reveals that the nano-sheets have triangular and circular two different shape edges, dislocation and stacking faults are also observed, which should have implications for our understanding of catalytic activity of ceria. We also propose a growth mechanism for the nano-sheets. As a result of this unique morphology, this WO₃ nano-sheets are found to show excellent gas-sensing properties which can use as promising sensor materials detecting ethanol with low concentration.

Dislocations in molecular crystals

Dislocations in molecular crystals remain terra incognita. Owing to the complexity of molecular structure, dislocations in molecular crystals can be difficult to understand using only the foundational concepts devised over decades for hard materials. Herein, we review the generation, structure, and physicochemical consequences of dislocations in molecular crystals. Unlike metals, ceramics, and semiconductors, molecular crystals are often characterized by flexible building units of low symmetry, thereby limiting analysis, complicating modeling, and prompting new approaches to elucidate their role in crystallography from growth to mechanics. Such considerations affect applications ranging from plastic electronics and mechanical actuators to the tableting of pharmaceuticals.

Predicting phase behavior of grain boundaries with evolutionary search and machine learning

The study of grain boundary phase transitions is an emerging field until recently dominated by experiments. The major bottleneck in the exploration of this phenomenon with atomistic modeling has been the lack of a robust computational tool that can predict interface structure. Here we develop a computational tool based on evolutionary algorithms that performs efficient grand-canonical grain boundary structure search and we design a clustering analysis that automatically identifies different grain boundary phases. Its application to a model system of symmetric tilt boundaries in Cu uncovers an unexpected rich polymorphism in the grain boundary structures. We find new ground and metastable states by exploring structures with different atomic densities. Our results demonstrate that the grain boundaries within the entire misorientation range have multiple phases and exhibit structural transitions, suggesting that phase behavior of interfaces is likely a general phenomenon.

The atomic structure of grain boundary phases remains unknown and is difficult to investigate experimentally. Here, the authors use an evolutionary algorithm to computationally explore interface structures in higher dimensions and predict low-energy configurations, showing interface phases may be ubiquitous.

Topologically Allowed Nonsixfold Vortices in a Sixfold Multiferroic Material: Observation and Classification

We report structural transformation of sixfold vortex domains into two-, four-, and eightfold vortices via a different type of topological defect in hexagonal manganites. Combining high-resolution electron microscopy and Landau-theory-based numerical simulations, we investigate the remarkable atomic arrangement and the intertwined relationship between the vortex structures and the topological defects. The roles of their displacement field, formation temperature, and nucleation sites are revealed. All conceivable vortices in the system are topologically classified using homotopy group theory, and their origins are identified.

Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices

Polycrystalline metal oxides find diverse applications in areas such as nanoelectronics, photovoltaics and catalysis. Although grain boundary defects are ubiquitous their structure and electronic properties are very poorly understood since it is extremely challenging to probe the structure of buried interfaces directly. In this paper we combine novel plan-view high-resolution transmission electron microscopy and first principles calculations to provide atomic level understanding of the structure and properties of grain boundaries in the barrier layer of a magnetic tunnel junction. We show that the highly [001] textured MgO films contain numerous tilt grain boundaries. First principles calculations reveal how these grain boundaries are associated with locally reduced band gaps (by up to 3 eV). Using a simple model we show how shunting a proportion of the tunnelling current through grain boundaries imposes limits on the maximum magnetoresistance that can be achieved in devices.

Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1–10]/(110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocation cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. This report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis.

Planar Vacancies in Sn1-xBixTe Nanoribbons

Vacancy engineering is a crucial approach to manipulate physical properties of semiconductors. Here, we demonstrate that planar vacancies are formed in Sn1-xBixTe nanoribbons by using Bi dopants via a facile chemical vapor deposition. Through combination of sub-angstrom-resolution imaging and density functional theory calculations, these planar vacancies are found to be associated with Bi segregations, which significantly lower their formation energies. The planar vacancies exhibit polymorphic structures with local variations in the lattice relaxation level, determined by their proximity to the nanoribbon surface. Such polymorphic planar vacancies, in conjunction with Bi dopants, trigger distinct localized electronic states, offering platforms for device applications of ternary chalcogenide materials.

Crystallographic fusion behavior and interface evolution of mono-layer BaTiO3nanocube arrangement

An abnormal sintering behavior between BaTiO₃nanocubes with variable sintering temperature and geometry was investigated by high resolution transmission electron microscopy.

Atomistic mechanisms of nonstoichiometry-induced twin boundary structural transformation in titanium dioxide

Grain boundary (GB) phase transformations often occur in polycrystalline materials while exposed to external stimuli and are universally implicated in substantially affecting their properties, yet atomic-scale knowledge on the transformation process is far from developed. In particular, whether GBs loaded with defects due to treatments can still be conventionally considered as disordered areas with kinetically trapped structure or turn ordered is debated. Here we combine advanced electron microscopy, spectroscopy and first-principles calculations to probe individual TiO₂ GB subject to different atmosphere, and to demonstrate that stimulated structural defects can self-assemble at GB, forming an ordered structure, which results in GB nonstoichiometry and structural transformations at the atomic scale. Such structural transformation is accompanied with electronic transition at GB. The three-dimensional transformations afford new perspectives on the structural defects at GBs and on the development of strategies to manipulate practically significant GB transformations.

Grain boundaries in polycrystalline materials strongly influence their mechanical properties. Here, the authors investigate polycrystalline TiO₂ by high-resolution electron microscopy and observe that structural defects form ordered structures at grain boundaries influencing their properties.

Quantitative assessment of the effect of purity on the properties of single wall carbon nanotubes

We quantitatively demonstrate the importance of high purity for the application of single wall carbon nanotubes (SWCNTs), materials solely composed of one surface, by examining the effects of carbon impurities on the electrical, thermal, and mechanical properties of both as-grown SWCNT forests and processed buckypaper. While decreases in properties were expected, our results showed the extreme sensitivity of SWCNT properties to carbonaceous impurities either through scattering in the individual SWCNTs or an inhibition of the ability to form inter-SWCNT junctions. Each property showed a nonlinear decrease (as high as 40%) with the addition of low levels of carbon impurities (∼15 wt%), which demonstrates that purity is as important as the crystalline structure.

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40 ± 0.05 eV for single-layer, 2.10 ± 0.05 eV for bilayer and 1.75 ± 0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85 ± 0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

Synthesis of carbon fiber@nickel oxide nanosheet core–shells for high-performance supercapacitors

We report on the design and synthesis of CFs@NiO-NSs by growing nickel oxide nanosheets (NiO-NSs) on carbon fibers (CFs), and find that the system shows a more enhanced electrochemical performance.

Molecular dynamics simulation of the slip systems in VN

We calculate the generalized stacking fault energies along different slip directions in various slip planes of VN and found that the 〈110〉 directions show the lowest maximum stacking fault energies.