Microwave spectroscopy of the low-filling-factor bilayer electron solid in a wide quantum well

Origin of Pinning Disorder in Magnetic-Field-Induced Wigner Solids

At low Landau level filling factors (ν), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the past three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here, we present a study of the pinning mode resonance in the low-ν Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths d. The pinning mode frequencies f_{p} decrease strongly as d increases, with the widest well exhibiting f_{p} as low as ≃35  MHz. The amount of reduction of f_{p} with increasing d can be explained remarkably well by tails of the wave function impinging into the alloy-disordered Al_{x}Ga_{1-x}As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.

Resistively loaded coplanar waveguide for microwave measurements of induced carriers

We describe the use of a coplanar waveguide (CPW) whose slots are filled with a resistive film, a resistively loaded CPW (RLCPW), to measure two-dimensional electron systems (2DESs). The RLCPW applied to the sample hosting the 2DES provides a uniform metallic surface serving as a gate to control the areal charge density of the 2DES. As a demonstration of this technique, we present measurements on a Si metal-oxide-semiconductor field-effect transistor and a model that successfully converts microwave transmission coefficients into conductivity of a nearby 2DES capacitively coupled to the RLCPW. We also describe the process of fabricating the highly resistive metal film required for fabrication of the RLCPW.

Fractional Quantum Hall Effect Energy Gaps: Role of Electron Layer Thickness

The fractional quantum Hall effect stands as a quintessential manifestation of an interacting two-dimensional electron system. One of the fractional quantum Hall effect's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a systematic experimental study that incorporates very high-quality two-dimensional electron systems confined to GaAs quantum wells with fixed density and varying well widths. The results demonstrate a clear decrease of the energy gap as the electron layer is made thicker and the short-range component of the Coulomb interaction is weakened. We also provide a quantitative comparison between the measured energy gaps and the available theoretical calculations that takes into account the role of finite layer thickness and Landau level mixing. All the measured energy gaps fall below the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find better overall agreement between the measured and calculated energy gaps, although some puzzling discrepancies remain.

Topological kink plasmons on magnetic-domain boundaries

Two-dimensional topological materials bearing time reversal-breaking magnetic fields support protected one-way edge modes. Normally, these edge modes adhere to physical edges where material properties change abruptly. However, even in homogeneous materials, topology still permits a unique form of edge modes – kink modes – residing at the domain boundaries of magnetic fields within the materials. This scenario, despite being predicted in theory, has rarely been demonstrated experimentally. Here, we report our observation of topologically-protected high-frequency kink modes – kink magnetoplasmons (KMPs) – in a GaAs/AlGaAs two-dimensional electron gas (2DEG) system. These KMPs arise at a domain boundary projected from an externally-patterned magnetic field onto a uniform 2DEG. They propagate unidirectionally along the boundary, protected by a difference of gap Chern numbers (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\pm1$$\end{document}±1) in the two domains. They exhibit large tunability under an applied magnetic field or gate voltage, and clear signatures of nonreciprocity even under weak-coupling to evanescent photons.

Topological kink modes are peculiar edge excitations that take place at domain boundaries of magnetic fields inside homogeneous materials. Here, the authors experimentally observe kink magnetoplasmons in a 2D electron gas using custom-shaped strong permanent magnets on top of a GaAs/AlGaAs heterojunction.

Geometric Resonance of Composite Fermions near Bilayer Quantum Hall States

Via the application of a parallel magnetic field, we induce a single-layer to bilayer transition in two-dimensional electron systems confined to wide GaAs quantum wells and study the geometric resonance of composite fermions (CFs) with a periodic density modulation in our samples. The measurements reveal that CFs exist close to bilayer quantum Hall states, formed at Landau level filling factors ν=1 and 1/2. Near ν=1, the geometric resonance features are consistent with half the total electron density in the bilayer system, implying that CFs prefer to stay in separate layers and exhibit a two-component behavior. In contrast, close to ν=1/2, CFs appear single-layer-like (single component) as their resonance features correspond to the total density.

Observation of an Anisotropic Wigner Crystal

We report a new correlated phase of two-dimensional charged carriers in high magnetic fields, manifested by an anisotropic insulating behavior at low temperatures. It appears in a large range of low Landau level fillings 1/3≲ν≲2/3 in hole systems confined to wide GaAs quantum wells when the sample is tilted in magnetic field to an intermediate angle. The parallel field component (B_{∥}) leads to a crossing of the lowest two Landau levels, and an elongated hole wave function in the direction of B_{∥}. Under these conditions, the in-plane resistance exhibits an insulating behavior, with the resistance along B_{∥} about 10 times smaller than the resistance perpendicular to B_{∥}. We interpret this anisotropic insulating phase as a two-component, striped Wigner crystal.