Efficient water reduction with gallium phosphide nanowires

14.8% Quantum Efficient Gallium Phosphide Photocatalyst for Hydrogen Evolution

Gallium phosphide is an established photoelectrode material for H2 or O2 evolution from water, but particle-based GaP photocatalysts for H2 evolution are very rare. To understand the reasons, we investigated the photocatalytic H2 evolution reaction (HER) of suspended n-type GaP particles with iodide, sulfite, ferricyanide, ferrous ion, and hydrosulfide as sacrificial electron donors, and using Pt, RhyCr2-yO3, and Ni2P HER cocatalysts. A record apparent quantum efficiency of 14.8% at 525 nm was achieved after removing gallium and oxide charge trapping states from the GaP surface, adding a Ni2P cocatalyst to reduce the proton reduction overpotential, lowering the Schottky-barrier at the GaP-cocatalyst interface, adjusting the polarity of the depletion layer at the GaP-liquid interface, and optimizing the electrochemical potential of the electron donor. The work not only showcases the main factors that control charge separation in suspended photocatalysts, but it also explains why most known HER photocatalysts in the literature are based on n-type and not p-type semiconductors.

n-Si/SiOx /CoOx -Mo Photoanode for Efficient Photoelectrochemical Water Oxidation

Green hydrogen is considered to be the key for solving the emerging energy and environmental issues. The photoelectrochemical (PEC) process for the production of green hydrogen has been widely investigated because solar power is clean and renewable. However, mass production in this way is still far away from reality. Here, a Si photoanode is reported with CoOx as co-catalyst for efficient water oxidation. It is found that a high photovoltage of 350 mV can be achieved in 1.0 m K3 BO3 . Importantly, the photovoltage can be further increased to 650 mV and the fill factor of 0.62 is obtained in 1.0 m K3 BO3 by incorporating Mo into CoOx . The Mo-incorporated photoanode is also highly stable. It is shown that the incorporation of Mo can reduce the particle size of co-catalyst on the Si surface, improve the particle-distribution uniformity, and increase the density of particles, which can effectively enhance the light absorption and the electrochemical active surface area. Importantly, the Mo-incorporation results in high energy barrier in the heterojunction. All of these factors are attributed to improved the PEC performance. These findings may provide new strategies to maximize the solar-to-fuel efficiency by tuning the co-catalysts on the Si surface.

Enhanced Light Trapping in GaAs/TiO2-Based Photocathodes for Hydrogen Production

Photoelectrochemical cells (PEC) are appealing devices for the production of renewable energy carriers. In this context, III-V semiconductors such as GaAs are very promising materials due to their tunable band gaps, which can be appropriately adjusted for sunlight harvesting. Because of the high cost of these semiconductors, the nanostructuring of the photoactive layer can help to improve the device efficiency as well as drastically reduce the amount of material needed. III-V nanowire-based photoelectrodes benefit from the intrinsically high aspect ratio of nanowires, their enhanced ability to trap light, and their improved charge separation and collection abilities and thus are particularly attractive for PECs. However, III-V semiconductors often suffer from corrosion in aqueous electrolytes, preventing their utilization over long periods under relevant working conditions. Here, photocathodes of GaAs nanowires protected with thin TiO2 shells were prepared and studied under simulated sunlight irradiation to assess their photoelectrochemical performances in correlation with their structural degradation, highlighting the advantageous nanowire geometry compared to its thin-film counterpart. Morphological and electronic parameters, such as the aspect ratio of the nanowires and their doping pattern, were found to strongly influence the photocatalytic performances of the system. This work highlights the advantageous combination of nanowires featuring a buried radial p-n junction with Co nanoparticles used as a hydrogen evolution catalyst. The nanostructured photocathodes exhibit significant photocatalytic activities comparable with previous noble-metal-based systems. This study demonstrates the potential of a GaAs nanostructured semiconductor and its reliable use for photodriven hydrogen production.

Metal-Doped C3B Monolayer as the Promising Electrocatalyst for Hydrogen/Oxygen Evolution Reaction: A Combined Density Functional Theory and Machine Learning Study

The development of high-efficiency electrocatalysts for hydrogen evolution reduction (HER)/oxygen evolution reduction (OER) is highly desirable. In particular, metal borides have attracted much attention because of their excellent performances. In this study, we designed a series of metal borides by doping of a transition metal (TM) in a C3B monolayer and further explored their potential applications for HER/OER via density functional theory (DFT) calculations and machine learning (ML) analysis. Our results revealed that the |ΔG*H| values of Fe-, Ag-, Re-, and Ir-doped C3B are approximately 0.00 eV, indicating their excellent HER performances. On the other hand, among all the considered TM atoms, the Ni- and Pt-doped C3B exhibit excellent OER activities with the overpotentials smaller than 0.44 V. Together with their low overpotentials for HER (<0.16 V), we proposed that Ni/C3B and Pt/C3B could be the potential bifunctional electrocatalysts for water splitting. In addition, the ML method was employed to identify the important factors to affect the performance of the TM/C3B electrocatalyst. Interestingly, the results showed that the OER performance is closely related to the inherent properties of TM atoms, i.e., the number of d electrons, electronegativity, atomic radius, and first ionization energy; all these values could be directly obtained without DFT calculations. Our results not only proposed several promising electrocatalysts for HER/OER but also suggested a guidance to design the potential TM-boron (TM-B)-based electrocatalysts.

Novel octa-graphene-like structures based on GaP and GaAs

CONTEXT

The discovery of graphene gave way to the search for new two-dimensional structures. In this regard, octa-graphene is a carbon allotrope consisting of 4- and 8-membered rings in a single planar sheet, drawing the research community's attention to study their inorganic analogs. Considering the promising properties of octa-graphene-like structures and the role of GaAs and GaP in semiconductor physics, this study aims to propose, for the first time, two novel inorganics buckled nanosheets based on the octa-graphene structure, the octa-GaAs and octa-GaP. This work investigated the structural, electronic, and vibrational properties of these novel octa-graphene-based materials. The octa-GaP and octa-GaAs have an indirect band gap transition with a valence band maximum between M and Г points and a conduction band minimum at Г point with energy of 3.05 eV and 2.56 eV, respectively. The QTAIMC analysis indicates that both structures have incipient covalent in their bonds. The vibrational analysis demonstrates the occurrence of Γ_Raman = 6A_g + 6B_g and Γ_Raman = 12A' + 12B″ for octa-GaP and octa-GaAs, respectively. The symmetry reduction of octa-GaAs leads to activating inactive modes observed in the octa-GaP structure. The frontier crystalline orbitals are composed by Ga(p_x) and P(p_y and p_z) orbitals for octa-GaP and Ga(p_x and p_y) and As(s, p_y, and p_z) for octa-GaAs in the valence bands while in the conduction bands by Ga(p_y, p_z, and s) for both compounds and P(p_x and p_z) and As(p_y). The phonon bands demonstrate the absence of the negative frequency modes and the structural stability of these new nanosheets. This report aims to reveal the fundamental properties of both newfound materials for stimulating experimental research groups in the search for synthesis routes to obtain this structure.

METHODS

This work used the DFT/B3LYP approach implemented in the CRYSTAL17 computational package. Ga, As, and P atomic centers were described by triple-zeta valence with polarization (TZVP) basis set. The vibrational analysis was carried out via coupled-perturbed Hartree-Fock/Kohn Sham (CPHF/KS) method, and the chemical bonds were evaluated via the quantum theory of atoms in molecules and crystals (QTAIMC).

Direct In Situ Measurement of Quantum Efficiencies of Charge Separation and Proton Reduction at TiO2-Protected GaP Photocathodes

Photoelectrochemical solar fuel generation at the semiconductor/liquid interface consists of multiple elementary steps, including charge separation, recombination, and catalytic reactions. While the overall incident light-to-current conversion efficiency (IPCE) can be readily measured, identifying the microscopic efficiency loss processes remains difficult. Here, we report simultaneous in situ transient photocurrent and transient reflectance spectroscopy (TRS) measurements of titanium dioxide-protected gallium phosphide photocathodes for water reduction in photoelectrochemical cells. Transient reflectance spectroscopy enables the direct probe of the separated charge carriers responsible for water reduction to follow their kinetics. Comparison with transient photocurrent measurement allows the direct probe of the initial charge separation quantum efficiency (ϕ_CS) and provides support for a transient photocurrent model that divides IPCE into the product of quantum efficiencies of light absorption (ϕ_abs), charge separation (ϕ_CS), and photoreduction (ϕ_red), i.e., IPCE = ϕ_absϕ_CSϕ_red. Our study shows that there are two general key loss pathways: recombination within the bulk GaP that reduces ϕ_CS and interfacial recombination at the junction that decreases ϕ_red. Although both loss pathways can be reduced at a more negative applied bias, for GaP/TiO₂, the initial charge separation loss is the key efficiency limiting factor. Our combined transient reflectance and photocurrent study provides a time-resolved view of microscopic steps involved in the overall light-to-current conversion process and provides detailed insights into the main loss pathways of the photoelectrochemical system.

Wurtzite Gallium Phosphide via Chemical Beam Epitaxy: Impurity-Related Luminescence vs Growth Conditions

The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano- and microstructures obtained via chemical beam epitaxy on the optical properties was studied using power- and temperature-dependent photoluminescence (PL). We showed that the PL spectra are dominated by two strong broad emission bands at 1.68 and 1.88 eV and two relatively narrow peaks at 2.04 and 2.09 eV. The broad emissions are associated with the presence of carbon and a small number of extended crystal defects, respectively. For the sharp emissions, two main radiative recombination channels were observed with ionization energies estimated in the range of 50-80 meV and lower than 10 meV. No variation of the low-temperature PL spectra was observed for samples grown at different P precursor flows, while increasing Ga content enhanced the dominant broad emission at around 1.68 eV, suggesting that the group III organometallic precursor is the main source of impurities. Finally, Be-doped samples were grown, and their characteristic optical emission at 2.03 eV was identified. These results contribute to the understanding of impurity-related luminescence in hexagonal GaP, being useful for further crystal growth optimization required for the fabrication of optoelectronic devices.

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoS_x) to construct III-nitride/a-MoS_x core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of -100.42 mA W^-1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W^-1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoS_x decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.

Pulsed Laser Phosphorus Doping and Nanocomposite Catalysts Deposition in Forming a-MoSx/NP-Mo//n+p-Si Photocathodes for Efficient Solar Hydrogen Production

Pulsed laser deposition of nanostructured molybdenum sulfide films creates specific nonequilibrium growth conditions, which improve the electrocatalytic properties of the films in a hydrogen evolution reaction (HER). The enhanced catalytic performance of the amorphous a-MoS_x (2 ≤ x ≤ 3) matrix is due to the synergistic effect of the Mo nanoparticles (Mo-NP) formed during the laser ablation of a MoS₂ target. This work looks at the possibility of employing a-MoS_x/NP-Mo films (4 and 20 nm thickness) to produce hydrogen by photo-stimulated HER using a p-Si cathode. A simple technique of pulsed laser p-Si doping with phosphorus was used to form an n⁺p-junction. Investigations of the energy band arrangement at the interface between a-MoS_x/NP-Mo and n⁺-Si showed that the photo-HER on an a-MoS_x/NP-Mo//n⁺p-Si photocathode with a 20 nm thick catalytic film proceeded according to a Z-scheme. The thickness of interfacial SiO_y(P) nanolayer varied little in photo-HER without interfering with the effective electric current across the interface. The a-MoS_x/NP-Mo//n⁺p-Si photocathode showed good long-term durability; its onset potential was 390 mV and photocurrent density was at 0 V was 28.7 mA/cm². The a-MoS_x/NP-Mo//n⁺p-Si photocathodes and their laser-based production technique offer a promising pathway toward sustainable solar hydrogen production.

Engineering Single-Atomic Ni-N4-O Sites on Semiconductor Photoanodes for High-Performance Photoelectrochemical Water Splitting

Direct photoelectrochemical (PEC) water splitting is a promising solution for solar energy conversion; however, there is a pressing bottleneck to address the intrinsic charge transport for the enhancement of PEC performance. Herein, a versatile coupling strategy was developed to engineer atomically dispersed Ni-N₄ sites coordinated with an axial direction oxygen atom (Ni-N₄-O) incorporated between oxygen evolution cocatalyst (OEC) and semiconductor photoanode, boosting the photogenerated electron-hole separation and thus improving PEC activity. This state-of-the-art OEC/Ni-N₄-O/BiVO₄ photoanode exhibits a record high photocurrent density of 6.0 mA cm^-2 at 1.23 V versus reversible hydrogen electrode (vs RHE), over approximately 3.97 times larger than that of BiVO₄, achieving outstanding long-term photostability. From X-ray absorption fine structure analysis and density functional theory calculations, the enhanced PEC performance is attributed to the construction of single-atomic Ni-N₄-O moiety in OEC/BiVO₄, facilitating the holes transfer, decreasing the free energy barriers, and accelerating the reaction kinetics. This work enables us to develop an effective pathway to design and fabricate efficient and stable photoanodes for feasible PEC water splitting application.

Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO2 Layer

Narrow-band-gap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer more severe corrosion by the electrolyte solution than the thin-film counterparts. Thus, short-term durability is the major obstacle for using these NWs for practical water-splitting applications. Here, we demonstrated for the first time that a thin layer (∼7 nm thick) of compact TiO₂ deposited by atomic layer deposition can provide robust protection to III-V NWs. The protected GaAs NWs maintain 91.4% of its photoluminescence intensity after 14 months of storage in ambient atmosphere, which suggests the TiO₂ layer is pinhole-free. Working as a photocathode for water splitting, they exhibited a 45% larger photocurrent density compared with unprotected counterparts and a high Faraday efficiency of 91% and can also maintain a record-long highly stable performance among narrow-band-gap III-V NW photoelectrodes; after 67 h photoelectrochemical stability test reaction in a strong acid electrolyte solution (pH = 1), they show no apparent indication of corrosion, which is in stark contrast to the unprotected NWs that fully failed after 35 h. These findings provide an effective way to enhance both stability and performance of III-V NW-based photoelectrodes, which are highly important for practical applications in solar-energy-based water-splitting systems.

Stability of supported aerosol-generated nanoparticles in liquid media

The stability of nanoparticles and their supports are critical, but poorly understood, parameters for applications of such systems in liquid environments. Here we develop an approach to systematically investigate the stability of aerosol-generated nanoparticles after exposure to commonly used solvents using a combination of identical location-SEM and density/size analysis. We demonstrate that the choice of solvent needs to be carefully matched with both the particle and support materials. We show that thermal annealing significantly increases the adhesion of the particles and expands the scope of applications in aqueous media and for biological applications. The results clarify combinations of inorganic nanoparticles on oxide and semiconductor supports with solvents and environmental conditions that give sufficient stability. Combined, the presented methods should be of value in investigating the stability of nanoparticle systems after exposure to solvent and can be used for future developments of high-performing supported aerosol-generated nanoparticles for solvent-based applications.

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Growth of high-quality III-V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III-V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III-V nanowire growth studies provide an excellent example to guide the nanowire growth.

Nanostructured metal phosphides: from controllable synthesis to sustainable catalysis

Metal phosphides (MPs) with unique and desirable physicochemical properties provide promising potential in practical applications, such as the catalysis, gas/humidity sensor, environmental remediation, and energy storage fields, especially for transition metal phosphides (TMPs) and MPs consisting of group IIIA and IVA metal elements. Most studies, however, on the synthesis of MP nanomaterials still face intractable challenges, encompassing the need for a more thorough understanding of the growth mechanism, strategies for large-scale synthesis of targeted high-quality MPs, and practical achievement of functional applications. This review aims at providing a comprehensive update on the controllable synthetic strategies for MPs from various metal sources. Additionally, different passivation strategies for engineering the structural and electronic properties of MP nanostructures are scrutinized. Then, we showcase the implementable applications of MP-based materials in emerging sustainable catalytic fields including electrocatalysis, photocatalysis, mild thermocatalysis, and related hybrid systems. Finally, we offer a rational perspective on future opportunities and remaining challenges for the development of MPs in the materials science and sustainable catalysis fields.

Engineering III-V Semiconductor Nanowires for Device Applications

III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.

Towards the understanding of the gold interaction with AIII-BV semiconductors at the atomic level

AIII-BV semiconductors have been considered to be a promising material for decades in overcoming the limitations of silicon semiconductor devices. One of the important aspects within the AIII-BV semiconductor technology is gold-semiconductor interactions on the nanoscale. We report on the investigations into the basic chemical interactions of Au atoms with AIII-BV semiconductor crystals by the investigation of the nanostructure formation in the process of thermally-induced Au self-assembly on various AIII-BV surfaces by means of atomically resolved High Angle Annular Dark Field (HAADF) Scanning Transmission Electron Microscopy (STEM) measurements. We have found that the formation of nanostructures is a consequence of the surface diffusion and nucleation of adatoms produced by Au induced chemical reactions on AIII-BV semiconductor surfaces. Only for InSb crystals we have found that there is efficient diffusion of Au atoms into the bulk, which we experimentally studied by Machine Learning HAADF STEM image quantification and theoretically by Density Functional Theory (DFT) calculations with the inclusion of finite temperature effects. Furthermore, the effective number of Au atoms needed to release one AIII metal atom has been estimated. The experimental finding reveals a difference in the Au interactions with the In- and Ga-based groups of AIII-BV semiconductors. Our comprehensive and systematic studies uncover the details of the Au interactions with the AIII-BV surface at the atomic level with chemical sensitivity and shed new light on the fundamental Au/AIII-BV interactions at the atomic scale.

Synthesis and Applications of III-V Nanowires

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology

Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.

Elaborately Modified BiVO4 Photoanodes for Solar Water Splitting

Photoelectrochemical (PEC) cells for solar-energy conversion have received immense interest as a promising technology for renewable hydrogen production. Their similarity to natural photosynthesis, utilizing sunlight and water, has provoked intense research for over half a century. Among many potential photocatalysts, BiVO₄ , with a bandgap of 2.4-2.5 eV, has emerged as a highly promising photoanode material with a good chemical stability, environmental inertness, and low cost. Unfortunately, its charge transport properties are modest, at most a hole diffusion length (L_p ) of ≈70 nm. However, recent rapid developments in multiple modification strategies have elevated it to a position as the most promising metal oxide photoanode material. This review summarizes developments in BiVO₄ photoanodes in the past 10 years, in which time it has continuously broken its own performance records for PEC water oxidation. Effective modification techniques are discussed, including synthesis of nanostructures/nanopores, external/internal doping, heterojunction fabrication, surface passivation, and cocatalysts. Tandem systems for unassisted solar water splitting and PEC production of value-added chemicals are also discussed.

Gallium Phosphide photoanode coated with TiO2 and CoOx for stable photoelectrochemical water oxidation

Gallium Phosphide (GaP) has a band gap of 2.26 eV and a valance band edge that is more negative than the water oxidation level. Hence, it may be a promising material for photoelectrochemical water splitting. However, one thing GaP has in common with other III-V semiconductors is that it corrodes in photoelectrochemical reactions. Cobalt oxide (CoO_x) is a chemically stable and highly active oxygen evolution reaction co-catalyst. In this study, we protected a GaP photoanode by using a 20 nm TiO₂ as a protection layer and a 2 nm cobalt oxide co-catalyst layer, which were both deposited via atomic layer deposition (ALD). A GaP photoanode that was modified by CoO_x exhibited much higher photocurrent, potential, and photon-to-current efficiency than a bare GaP photoanode under AM1.5G illumination. A photoanode that was coated with both TiO₂ and CoO_x layers was stable for over 24 h during constant reaction in 1 M NaOH (pH 13.7) solution under one sun illumination.

Toward practical solar hydrogen production - an artificial photosynthetic leaf-to-farm challenge

Solar water splitting is a promising approach to transform sunlight into renewable, sustainable and green hydrogen energy. There are three representative ways of transforming solar radiation into molecular hydrogen, which are the photocatalytic (PC), photoelectrochemical (PEC), and photovoltaic-electrolysis (PV-EC) routes. Having the future perspective of green hydrogen economy in mind, this review article discusses devices and systems for solar-to-hydrogen production including comparison of the above solar water splitting systems. The focus is placed on a critical assessment of the key components needed to scale up PEC water splitting systems such as materials efficiency, cost, elemental abundancy, stability, fuel separation, device operability, cell architecture, and techno-economic aspects of the systems. The review follows a stepwise approach and provides (i) a summary of the basic principles and photocatalytic materials employed for PEC water splitting, (ii) an extensive discussion of technologies, procedures, and system designs, and (iii) an introduction to international demonstration projects, and the development of benchmarked devices and large-scale prototype systems. The task of scaling up of laboratory overall water splitting devices to practical systems may be called "an artificial photosynthetic leaf-to-farm challenge".

MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

Dilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on GaP(111)B and on GaP/Si(111) hetero-substrates. The NW morphology meets the common needs for use in applications, i.e. they are straight and vertically oriented to the substrate as well as homogeneous in length. Moreover, no parasitical island growth is observed. Nitrogen was found to be incorporated on group V sites as determined from transmission electron microscopy (TEM) and Raman spectroscopy. Together with the incorporation of N, the NWs exhibit strong photoluminescence in the visible range, which we attribute to radiative recombination at N-related deep states. Independently of the N incorporation, a peculiar facet formation was found, with {110} facets at the top and {112} at the bottom of the NWs. TEM reveals that this phenomenon is related to different stacking fault densities within the zinc blende structure, which lead to different effective surface energies for the bottom and the top of the NWs.

High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures

Photoelectrochemical water splitting is a clean and environmentally friendly method for solar hydrogen generation. Its practical application, however, has been limited by the poor stability of semiconductor photoelectrodes. In this work, we demonstrate the use of GaN nanostructures as a multifunctional protection layer for an otherwise unstable, low-performance photocathode. The direct integration of GaN nanostructures on n⁺-p Si wafer not only protects Si surface from corrosion but also significantly reduces the charge carrier transfer resistance at the semiconductor/liquid junction, leading to long-term stability (>100 h) at a large current density (>35 mA/cm²) under 1 sun illumination. The measured applied bias photon-to-current efficiency of 10.5% is among the highest values ever reported for a Si photocathode. Given that both Si and GaN are already widely produced in industry, our studies offer a viable path for achieving high-efficiency and highly stable semiconductor photoelectrodes for solar water splitting with proven manufacturability and scalability.

Ultrafast time-resolved extreme ultraviolet (XUV) photoelectron spectroscopy of hole transfer in a Zn/n-GaP Schottky junction

The addition of a metal overlayer to a semiconductor photocatalyst is a frequently used synthetic route to passivate the surface and, via the formation of a Schottky barrier, to enhance catalytic activity of the photocatalyst material. While it is known that Schottky junctions decrease recombination by charge separation, measurements of the depletion region dynamics have remained elusive. Here, we use ultrafast pump-probe transient photoelectron spectroscopy to measure material-specific dynamics of the Zn/n-GaP(100) system. Through photoemission measurements the Schottky barrier height is determined to be 2.1 ± 0.1 eV at 10 monolayers of total Zn deposition. Transient photoemission measurements utilizing a 400 nm pump pulse show that, after excitation, holes are transferred from n-GaP(100) to the Zn overlayer within a few ps, as evidenced by shifts of the Zn 3d and Ga 3d core levels to higher binding energies. Within the timescale of the experiment (130 ps) no carrier recombination is observed in the junction. Furthermore, a long-lived surface photovoltage signal is observed at times >1 ms after photoexcitation. This work further exemplifies the potential of transient extreme ultraviolet photoelectron spectroscopy as a material-specific technique for the study of heterojunctions.

Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case

Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In _x Ga_1-x P core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.

NiO Nanoparticles Anchored on Phosphorus-Doped α-Fe2 O3 Nanoarrays: An Efficient Hole Extraction p-n Heterojunction Photoanode for Water Oxidation

The photoelectrochemical (PEC) water-splitting efficiency of a hematite-based photoanode is still far from the theoretical value due to its poor surface reaction kinetics and high density of surface trapping states. To solve these drawbacks, a photoanode consisting of NiO nanoparticles anchored on a gradient phosphorus-doped α-Fe₂ O₃ nanorod (NR) array (NiO/P-α-Fe₂ O₃ ) was fabricated to achieve optimal light absorption and charge separation, as well as rapid surface reaction kinetics. Specifically, a photoanode with the NR array structure allowed a high mass-transport rate to be achieved, while phosphorus doping effectively decreased the number of surface trapping sites and improved the electrical conductivity of α-Fe₂ O₃ . Furthermore, the p-n junction that forms between NiO and P-α-Fe₂ O₃ can further improve the PEC performance due to efficient hole extraction and the water oxidization catalytic activity of NiO. Consequently, the NiO/P-α-Fe₂ O₃ NR photoanode produced a high photocurrent density of 2.08 mA cm^-2 at 1.23 V versus a reversible hydrogen electrode and a 110 mV cathodic shift of the onset potential. This rational design of structure offers a new perspective in exploring high-performance PEC photoanodes.

Vibrational structure analysis of cobalt fluoro-porphyrin surface coatings on gallium phosphide

Grazing angle attenuated total reflectance Fourier transform infrared (GATR–FTIR) spectroscopy is used to characterize chemically modified gallium phosphide (GaP) surfaces containing grafted cobalt(II) porphyrins with 3-fluorophenyl substituents installed at the meso-positions. In these hybrid constructs, porphyrin surface attachment is achieved using either a two-step method involving coordination of cobalt fluoro-porphyrin metal centers to nitrogen sites on an initially applied thin-film polypyridyl surface coating, or via a direct modification strategy using a cobalt fluoro-porphyrin precursor bearing a covalently bonded 4-vinylphenyl surface attachment group at a [Formula: see text]-position. Both surface-attachment chemistries leverage the UV-induced immobilization of alkenes but result in distinct structural connectivities of the grafted porphyrin units and their associated vibrational spectra. In particular, the in-plane deformation vibrational frequency of metalloporphyrin components in samples prepared via coordination to the polymeric interface is characterized by an eight wavenumber shift to higher frequencies compared to that measured on metalloporphyrin-modified surfaces prepared using the one-step attachment method. The more rigid ring structure in the polymeric architecture is consistent with coordination of porphyrin cobalt centers to pyridyl-nitrogen sites on the surface graft. These results demonstrate the use of GATR–FTIR spectroscopy as a sensitive tool for characterizing porphyrin-modified surfaces with absorption signals that are close to the detection limits of many common spectroscopic techniques.

GaAs quantum dots in a GaP nanowire photodetector

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

Strategies for stable water splitting via protected photoelectrodes

Photoelectrochemical (PEC) solar-fuel conversion is a promising approach to provide clean and storable fuel (e.g., hydrogen and methanol) directly from sunlight, water and CO₂. However, major challenges still have to be overcome before commercialization can be achieved. One of the largest barriers to overcome is to achieve a stable PEC reaction in either strongly basic or acidic electrolytes without degradation of the semiconductor photoelectrodes. In this work, we discuss fundamental aspects of protection strategies for achieving stable solid/liquid interfaces. We then analyse the charge transfer mechanism through the protection layers for both photoanodes and photocathodes. In addition, we review protection layer approaches and their stabilities for a wide variety of experimental photoelectrodes for water reduction. Finally, we discuss key aspects which should be addressed in continued work on realizing stable and practical PEC solar water splitting systems.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

This review provides a systematic overview of the integration, surface, and interfacial engineering of 2D/3D and 2D/2D homo/heterojunctions for PV and PEC applications.

Exploring Au Droplet Motion in Nanowire Growth: A Simple Route toward Asymmetric GaP Morphologies

Here we show a new nanowire growth procedure, exploring the thermally activated motion of Au droplets on III-V surfaces. We show that by setting a single growth parameter we can activate the crawling motion of Au droplets in vacuum and locally modify surface composition in order to enhance vapor-solid (VS) growth along oxide-free areas on the trail of the metal particle. Asymmetric VS growth rates are comparable in magnitude to the vapor-liquid-solid growth, producing unconventional wurtzite GaP morphologies, which shows negligible defect density as well as optical signal in the green spectral region. Finally, we demonstrate that this effect can also be explored in different substrate compositions and orientations with the final shape finely tuned by group III flow and nanoparticle size. This distinct morphology for wurtzite GaP nanomaterials can be interesting for the design of nanophotonics devices.

Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy

We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.

Retrieving the Quantitative Chemical Information at Nanoscale from Scanning Electron Microscope Energy Dispersive X-ray Measurements by Machine Learning

The quantitative composition of metal alloy nanowires on InSb semiconductor surface and gold nanostructures on germanium surface is determined by blind source separation (BSS) machine learning method using non-negative matrix factorization from energy dispersive X-ray spectroscopy (EDX) spectrum image maps measured in a scanning electron microscope (SEM). The BSS method blindly decomposes the collected EDX spectrum image into three source components, which correspond directly to the X-ray signals coming from the supported metal nanostructures, bulk semiconductor signal, and carbon background. The recovered quantitative composition is validated by detailed Monte Carlo simulations and is confirmed by separate cross-sectional transmission electron microscopy EDX measurements of the nanostructures. This shows that simple and achievable SEM EDX measurements together with machine learning non-negative matrix factorization-based blind source separation processing could be successfully used for the nanostructures quantitative chemical composition determination. Our finding can make the chemical quantification at the nanoscale much faster and cost efficient for many systems.

Shape Controlled Synthesis of Copper Vanadate Platelet Nanostructures, Their Optical Band Edges, and Solar-Driven Water Splitting Properties

We report the morphological and size tailored rational and facile synthesis of copper vanadate nanostructures via sonication assisted sol gel method. Field emission scanning electron microscopy (FESEM), indicated irregular and nanoflakes morphologies for the as synthesized copper vanadate (CV-120) and copper vanadate calcined at 250 °C (CV-250). The semispherical platelets shaped morphology revealed for the copper vanadate calcined at 550 °C (CV-500). The XRD patterns confirm the monoclinic and triclinic crystal phases for CV-250 and CV-500, respectively. The optical properties of CV-250 and CV-500 via UV-DRS showed significant absorption in the visible regime at λ = 565 nm and 670 nm with band gap 2.2 eV and 1.84 eV, respectively as calculated from Kubelka-Munk (KM) equation via Tauc’s plot. The values of band edge positions of CV-250 and CV-550 straddle with the hydrogen (HER) and oxygen evolution reaction (OER) potentials. The photoelectrodes of CV-250 and CV-500 fabricated by adsorption desorption method to test their photoelectrochemical (PEC) water splitting performance in the three-electrode cell. The onset photocurrent potential is observed at ~0.42 V, which reached to saturation at 1.05 V. The photocurrent density at saturation is ~0.65 mA/cm² for CV-250 and CV-500, respectively.

Stability and Performance of Sulfide-, Nitride-, and Phosphide-Based Electrodes for Photocatalytic Solar Water Splitting

With the past decade of worldwide sustained efforts on artificial photosynthesis for photocatalytic solar water splitting and clean hydrogen generation by dedicated researchers and engineers from different disciplines, substantial progress has been achieved in raising its overall efficiency along with finding new photocatalysts. Various materials, systems, devices, and better fundamental understandings of the interplay between interfacial chemistry, electronic structure, and photogenerated charge dynamics involved have been developed. Nevertheless, the overall photocatalytic performance is yet to achieve its maximum theoretical limit. Moreover, the stability of well-known semiconductors (as well as novel ones) remains the biggest challenge that scientists are facing to develop durable industrial-scale devices for large-scale water oxidation and overall solar water splitting. In this Perspective, we summarize the major achievements and the different approaches carried out to improve the stability and performance of photoelectrodes based on sulfide, nitride, and phosphide semiconductors.

Crystal Phase Quantum Well Emission with Digital Control

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires

III–V semiconductors nanowires (NW) have recently attracted a significant interest for their potential application in the development of high efficiency, highly-integrated photonic devices and in particular for the possibility to integrate direct bandgap materials with silicon-based devices. Here we report the absorbance properties of GaAs-AlGaAs-GaAs core-shell-supershell NWs using photo-acoustic spectroscopy (PAS) measurements in the spectral range from 300 nm to 1100 nm wavelengths. The NWs were fabricated by self-catalyzed growth on Si substrates and their dimensions (length ~5 μm, diameter ~140–150 nm) allow for the coupling of the incident light to the guided modes in near-infrared (IR) part of the spectrum. This coupling results in resonant absorption peaks in the visible and near IR clearly evidenced by PAS. The analysis reveal broadening of the resonant absorption peaks arising from the NW size distribution and the interaction with other NWs. The results show that the PAS technique, directly providing scattering independent absorption spectra, is a very useful tool for the characterization and investigation of vertical NWs as well as for the design of NW ensembles for photonic applications, such as Si-integrated light sources, solar cells, and wavelength dependent photodetectors.

GaP/GaNP Heterojunctions for Efficient Solar-Driven Water Oxidation

The growth and characterization of an n-GaP/i-GaNP/p⁺ -GaP thin film heterojunction synthesized using a gas-source molecular beam epitaxy (MBE) method, and its application for efficient solar-driven water oxidation is reported. The TiO₂ /Ni passivated n-GaP/i-GaNP/p⁺ -GaP thin film heterojunction provides much higher photoanodic performance in 1 m KOH solution than the TiO₂ /Ni-coated n-GaP substrate, leading to much lower onset potential and much higher photocurrent. There is a significant photoanodic potential shift of 764 mV at a photocurrent of 0.34 mA cm^-2 , leading to an onset potential of ≈0.4 V versus reversible hydrogen electrode (RHE) at 0.34 mA cm^-2 for the heterojunction. The photocurrent at the water oxidation potential (1.23 V vs RHE) is 1.46 and 7.26 mA cm^-2 for the coated n-GaP and n-GaP/i-GaNP/p⁺ -GaP photoanodes, respectively. The passivated heterojunction offers a maximum applied bias photon-to-current efficiency (ABPE) of 1.9% while the ABPE of the coated n-GaP sample is almost zero. Furthermore, the coated n-GaP/i-GaNP/p⁺ -GaP heterojunction photoanode provides a broad absorption spectrum up to ≈620 nm with incident photon-to-current efficiencies (IPCEs) of over 40% from ≈400 to ≈560 nm. The high low-bias performance and broad absorption of the wide-bandgap GaP/GaNP heterojunctions render them as a promising photoanode material for tandem photoelectrochemical (PEC) cells to carry out overall solar water splitting.

Design of Contact Electrodes for Semiconductor Nanowire Solar Energy Harvesting Devices

Transparent, low-resistive contacts are critical for efficient solar energy harvesting devices. It is important to reconsider the material choices and electrode design as devices move from 2D films to 1D nanostructures. In this paper, we study the effectiveness of indium tin oxide (ITO) and metals, such as Ag and Cu, as contacts in 2D and 1D systems. Although ITO has been studied extensively and developed into an effective transparent contact for 2D devices, our results show that effectiveness does not translate to 1D systems. Particularly with consideration of resistance requirement, nanowires with metal shells as contacts enable better absorption within the semiconductor as compared to ITO. Furthermore, there is a strong dependence of contact performance on the semiconductor band gap and diameter of nanowires. We found that metal contacts outperform ITO for nanowire devices, regardless of the sheet resistance constraint, in the regime of diameters less than 100 nm and band-gaps greater than 1 eV. These metal shells optimized for best absorption are significantly thinner than ITO, which enables for the design of devices with high nanowire number density and consequently higher device efficiencies.

p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements

GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was varied. The incorporation of Mg into the NWs was confirmed by the observation of donor-acceptor pairs and acceptor-bound excitons in low-temperature photoluminescence spectroscopy. Quantitative information about the Mg concentrations was deduced from Raman scattering by local vibrational modes related to Mg. In order to study the type and density of charge carriers present in the NWs, we employed two photoelectrochemical techniques, open-circuit potential and Mott-Schottky measurements. Both methods showed the expected transition from n-type to p-type conductivity with increasing Mg doping level, and the latter characterization technique allowed us to quantify the charge carrier concentration. Beyond the quantitative information obtained for Mg doping of GaN NWs, our systematic and comprehensive investigation demonstrates the benefit of photoelectrochemical methods for the analysis of doping in semiconductor NWs in general.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

The functionality of semiconductor devices is determined by the incorporation of dopants at concentrations down to the parts per million (ppm) level and below. Optimization of intentional and unintentional impurity doping relies on methods to detect and map the level of impurities. Detecting such low concentrations of impurities in nanostructures is however challenging to date as on the one hand methods used for macroscopic samples cannot be applied due to the inherent small volumes or faceted surfaces and on the other hand conventional microscopic analysis techniques are not sufficiently sensitive. Here, we show that we can detect and map impurities at the ppm level in semiconductor nanowires using atom probe tomography. We develop a method applicable to a wide variety of nanowires relevant for electronic and optical devices. We expect that it will contribute significantly to the further optimization of the synthesis of nanowires, nanostructures and devices based on these structures.

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires

Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/In_xGa_1-xP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (Γ_8c-Γ_9v) to direct (Γ_7c-Γ_9v) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite In_xGa_1-xP.

Influence of growth conditions on the performance of InP nanowire solar cells

Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

Atomic-Scale Origin of Long-Term Stability and High Performance of p-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar (0001¯) top face and the nonpolar (101¯0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN.