High-performing nonlinear visualization of terahertz radiation on a silicon charge-coupled device

Selection criteria of image reconstruction algorithms for terahertz short-range imaging applications

Terahertz (THz) imaging has been regarded as cutting-edge technology in a wide range of applications due to its ability to penetrate through opaque materials, non-invasive nature, and its increased bandwidth capacity. Recently, THz imaging has been extensively researched in security, driver assistance technology, non-destructive testing, and medical applications. The objective of this review is to summarize the selection criteria for current state-of-the-art THz image reconstruction algorithms developed for short-range imaging applications over the last two decades. Moreover, we summarize the selected algorithms' performance and their implementation process. This study provides an in-depth understanding of the fundamentals of image reconstruction algorithms related to THz short-range imaging and future aspects of algorithm processing and selection.

Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector

This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/Hz, respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm2-sized image of the fingers of a hand with a pixel size of 1 mm2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection.

Terahertz beam spot size measurements by a CCD camera

We present the experimental data on the direct measurements of spatial distribution of the terahertz (THz) pulse intensity profile using a commercial silicon-based charge-coupled device (CCD) camera in the spectral range from 1-3 THz. A method to measure the dimensions of a high-intensity THz radiation beam in the focal plane using the CCD camera is proposed and experimentally verified.

Organic Crystals for THz Photonics

Organic crystals with second-order optical nonlinearity feature very high and ultra-fast optical nonlinearities and are therefore attractive for various photonics applications. During the last decade, they have been found particularly attractive for terahertz (THz) photonics. This is mainly due to the very intense and ultra-broadband THz-wave generation possible with these crystals. We review recent progress and challenges in the development of organic crystalline materials for THz-wave generation and detection applications. We discuss their structure, intrinsic properties, and advantages compared to inorganic alternatives. The characteristic properties of the most widely employed organic crystals at present, such as DAST, DSTMS, OH1, HMQ-TMS, and BNA are analyzed and compared. We summarize the most important principles for THz-wave generation and detection, as well as organic THz-system configurations based on either difference-frequency generation or optical rectification. In addition, we give state-of-the-art examples of very intense and ultra-broadband THz systems that rely on organic crystals. Finally, we present some recent breakthrough demonstrations in nonlinear THz photonics enabled by very intense organic crystalline THz sources, as well as examples of THz spectroscopy and THz imaging using organic crystals as THz sources for various scientific and technological applications.

Observation of crossover from intraband to interband nonlinear terahertz optics

In this Letter, we investigate the nonlinear effects of extremely intense few-cycle terahertz (THz) pulses (generated from the organic crystal 4-NN, NN-dimethylamino-4^'4^'-N^'N^'-methyl-stilbazolium 2, 4, 6 trimethylbenzenesulfonate, with peak electrical fields of a few MV/cm) on the carrier dynamics in n-doped semiconductor thin film In_0.53Ga_0.47As. By performing open-aperture Z-scan measurements and recording the transmitted THz energy through semiconductor sample, we observed a strong THz absorption bleaching effect at high fields, followed by an absorption enhancement at even higher fields. We attribute our observations to a crossover from pure intraband carrier dynamics to an interplay between intraband carrier heating and interband carrier generations.

Single-silicon CCD-CMOS platform for multi-spectral detection from terahertz to x-rays

Charge-coupled devices (CCDs) are a well-established imaging technology in the visible and x-ray frequency ranges. However, the small quantum photon energies of terahertz radiation have hindered the use of this mature semiconductor technological platform in this frequency range, leaving terahertz imaging totally dependent on low-resolution bolometer technologies. Recently, it has been shown that silicon CCDs can detect terahertz photons at a high field, but the detection sensitivity is limited. Here we show that silicon, complementary metal-oxide-semiconductor (CMOS) technology offers enhanced detection sensitivity of almost two orders of magnitude, compared to CCDs. Our findings allow us to extend the low-frequency terahertz cutoff to less than 2 THz, nearly closing the technological gap with electronic imagers operating up to 1 THz. Furthermore, with the silicon CCD/CMOS technology being sensitive to mid-infrared (mid-IR) and the x-ray ranges, we introduce silicon as a single detector platform from 1 EHz to 2 THz. This overcomes the present challenge in spatially overlapping a terahertz/mid-IR pump and x-ray probe radiation at facilities such as free electron lasers, synchrotron, and laser-based x-ray sources.

Coherent Two-Dimensional Terahertz Magnetic Resonance Spectroscopy of Collective Spin Waves

We report a demonstration of two-dimensional (2D) terahertz (THz) magnetic resonance spectroscopy using the magnetic fields of two time-delayed THz pulses. We apply the methodology to directly reveal the nonlinear responses of collective spin waves (magnons) in a canted antiferromagnetic crystal. The 2D THz spectra show all of the third-order nonlinear magnon signals including magnon spin echoes, and 2-quantum signals that reveal pairwise correlations between magnons at the Brillouin zone center. We also observe second-order nonlinear magnon signals showing resonance-enhanced second-harmonic and difference-frequency generation. Numerical simulations of the spin dynamics reproduce all of the spectral features in excellent agreement with the experimental 2D THz spectra.

Subcycle Extreme Nonlinearities in GaP Induced by an Ultrastrong Terahertz Field

We report on the experimental observation of extreme laser spectral broadening and a change in optical transmission in gallium phosphite induced by 25  MV/cm terahertz (THz) single-cycle internal field. Such intense THz radiation leads to twofold transient modifications of the optical properties in the electro-optical crystal. First, the electric field provokes extensive cross-phase modulation via the χ^{(2)} and χ^{(3)} nonlinearities on a copropagating 50 fs near infrared laser pulse which turns into 500% spectral broadening. Second, we observe an instantaneous change of the optical transmission occurring at the THz field which is alleged to interband Zener tunneling and charge carrier density modification by impact ionization turning the semiconductor in a metal-like transient state. The presented scheme displays a pathway to coherently control the optical properties of semiconductors on an ultrafast time scale by a strong THz field.

High-power femtosecond Raman frequency shifter

We report on the generation of broadband, high-energy femtosecond pulses centered at 1.28 μm by stimulated Raman scattering in a pressurized hydrogen cell. Stimulated Raman scattering is performed by two chirped and delayed pulses originating from a multi-mJ Ti:sapphire amplifier. The Stokes pulse carries record-high energy of 4.4 mJ and is recompressed down to 66 fs by a reflective grating pair. We characterized the short-wavelength mid-infrared source in view of energy stability, beam profile, and conversion efficiency at repetition rates of 100 and 10 Hz. The demonstrated high-energy frequency shifter will benefit intense THz sources based on highly nonlinear organic crystals.

A High Precision Terahertz Wave Image Reconstruction Algorithm

With the development of terahertz (THz) technology, the applications of this spectrum have become increasingly wide-ranging, in areas such as non-destructive testing, security applications and medical scanning, in which one of the most important methods is imaging. Unlike remote sensing applications, THz imaging features sources of array elements that are almost always supposed to be spherical wave radiators, including single antennae. As such, well-developed methodologies such as Range-Doppler Algorithm (RDA) are not directly applicable in such near-range situations. The Back Projection Algorithm (BPA) can provide products of high precision at the the cost of a high computational burden, while the Range Migration Algorithm (RMA) sacrifices the quality of images for efficiency. The Phase-shift Migration Algorithm (PMA) is a good alternative, the features of which combine both of the classical algorithms mentioned above. In this research, it is used for mechanical scanning, and is extended to array imaging for the first time. In addition, the performances of PMA are studied in detail in contrast to BPA and RMA. It is demonstrated in our simulations and experiments described herein that the algorithm can reconstruct images with high precision.

Intense THz source based on BNA organic crystal pumped at Ti:sapphire wavelength

We report on high-energy terahertz pulses by optical rectification (OR) in the organic crystal N-benzyl-2-methyl-4-nitroaniline (BNA) directly pumped by a conventional Ti:sapphire amplifier. The simple scheme provides an optical-to-terahertz conversion efficiency of 0.25% when pumped by collimated laser pulses with a duration of 50 fs and a central wavelength of 800 nm. The generated radiation spans frequencies between 0.2 and 3 THz. We measured the damage threshold, as well as the dependency of the conversion efficiency on the pump fluence, pump wavelength, and pulse duration.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

Growth, transmission, Raman spectrum and THz generation of DAST crystal

The tendency of transmittance as a function of THz frequency between the calculated and experimental values are consistent with each other. The absorption bands at around 1 THz can demonstrate the intrinsic absorption of the crystal.