Relaxing times for silicon

Pressure-driven phase transitions and reduction of dimensionality in 2D silicon nanosheets

In-situ high-pressure synchrotron X-ray powder diffraction studies up to 21 GPa of CVD-grown silicon 2D-nanosheets establish that the structural phase transitions depend on size and shape. For sizes between 9.3(7) nm and 15.2(8) nm we observe an irreversible phase transition sequence from I (cubic) → II (tetragonal) → V (hexagonal) during pressure increase and during decompression below 8 GPa the emergence of an X-ray amorphous phase. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and atomic force microscopy (AFM) images of this X-ray amorphous phase reveal the formation of significant numbers of 1D nanowires with aspect ratios > 10, which are twinned and grow along the <111> direction. We discovered a reduction of dimensionality under pressure from a 2D morphology to a 1D wire in a material with a diamond structure. MD simulations indicate the reduction of thermal conductivity in such nanowires.

Boson peak and Ioffe-Regel criterion in amorphous siliconlike materials: The effect of bond directionality

The vibrational properties of model amorphous materials are studied by combining complete analysis of the vibration modes, dynamical structure factor, and energy diffusivity with exact diagonalization of the dynamical matrix and the kernel polynomial method, which allows a study of very large system sizes. Different materials are studied that differ only by the bending rigidity of the interactions in a Stillinger-Weber modelization used to describe amorphous silicon. The local bending rigidity can thus be used as a control parameter, to tune the sound velocity together with local bonds directionality. It is shown that for all the systems studied, the upper limit of the Boson peak corresponds to the Ioffe-Regel criterion for transverse waves, as well as to a minimum of the diffusivity. The Boson peak is followed by a diffusivity's increase supported by longitudinal phonons. The Ioffe-Regel criterion for transverse waves corresponds to a common characteristic mean-free path of 5-7 Å (which is slightly bigger for longitudinal phonons), while the fine structure of the vibrational density of states is shown to be sensitive to the local bending rigidity.

The liquid-liquid phase transition in silicon revealed by snapshots of valence electrons

The basis for the anomalies of water is still mysterious. Quite generally tetrahedrally coordinated systems, also silicon, show similar thermodynamic behavior but lack--like water--a thorough explanation. Proposed models--controversially discussed--explain the anomalies as a remainder of a first-order phase transition between high and low density liquid phases, buried deeply in the "no man's land"--a part of the supercooled liquid region where rapid crystallization prohibits any experimental access. Other explanations doubt the existence of the phase transition and its first-order nature. Here, we provide experimental evidence for the first-order-phase transition in silicon. With ultrashort optical pulses of femtosecond duration we instantaneously heat the electronic system of silicon while the atomic structure as defined by the much heavier nuclear system remains initially unchanged. Only on a picosecond time scale the energy is transferred into the atomic lattice providing the energy to drive the phase transitions. With femtosecond X-ray pulses from FLASH, the free-electron laser at Hamburg, we follow the evolution of the valence electronic structure during this process. As the relevant phases are easily distinguishable in their electronic structure, we track how silicon melts into the low-density-liquid phase while a second phase transition into the high-density-liquid phase only occurs after the latent heat for the first-order phase transition has been transferred to the atomic structure. Proving the existence of the liquid-liquid phase transition in silicon, the hypothesized liquid-liquid scenario for water is strongly supported.

A density-driven phase transition between semiconducting and metallic polyamorphs of silicon

Amorphous and crystalline forms of silicon are well-known, tetrahedrally coordinated semiconductors. High-pressure studies have revealed extensive polymorphism among various metallic crystal structures containing atoms in six-, eight- and 12-fold coordination. Melting silicon at ambient or high pressure results in a conducting liquid, in which the average coordination is greater than four (ref. 3). This liquid cannot normally be quenched to a glass, because of rapid crystallization to the diamond-structured semiconductor. Solid amorphous silicon is obtained by synthesis routes such as chemical or physical vapour deposition that result in a tetrahedrally bonded semiconducting state. It has long been speculated that the amorphous solid and the liquid could represent two polymorphic forms of the amorphous state that are linked by density- or entropy-driven transformations. Such polyamorphic transitions are recognized to occur among several different types of liquid and glassy systems. Here we present experimental evidence for the occurrence of a density-driven polyamorphic transition between semiconducting and metallic forms of solid amorphous silicon. The experiments are combined with molecular dynamics simulations that map the behaviour of the amorphous solid on to that of the liquid state.

Anomalous diffusivity in supercooled liquid silicon under pressure

We perform isothermal-isobaric first-principles molecular-dynamics simulations to investigate the dynamics of liquid silicon (l-Si) under pressure. We find that the self-diffusion coefficient increases with increasing pressure in the deeply supercooled state. This anomalous diffusivity is attributed to the formation of locally tetrahedral configurations which on average reduces the diffusivity at low pressures. Densification hinders the formation of the tetrahedral configurations, thus the diffusivity increases with increasing pressure. The tetrahedral configurations frequently formed at low pressures may be viewed as fragments of the low-density form of l-Si . It is therefore conceivable that transformations between two distinct liquids, low- and high-density liquids, locally occur in deeply supercooled l-Si . The present findings indicate the profound generality of the dynamics in liquids with a tetrahedral network such as water.