Oxide electronics: Interface takes charge over Si

Reconfiguration of Amorphous Complex Oxides: A Route to a Broad Range of Assembly Phenomena, Hybrid Materials, and Novel Functionalities

Reconfiguration of amorphous complex oxides provides a readily controllable source of stress that can be leveraged in nanoscale assembly to access a broad range of 3D geometries and hybrid materials. An amorphous SrTiO₃ layer on a Si:B/Si_{1- x} Ge_x :B heterostructure is reconfigured at the atomic scale upon heating, exhibiting a change in volume of ≈2% and accompanying biaxial stress. The Si:B/Si_{1- x} Ge_x :B bilayer is fabricated by molecular beam epitaxy, followed by sputter deposition of SrTiO₃ at room temperature. The processes yield a hybrid oxide/semiconductor nanomembrane. Upon release from the substrate, the nanomembrane rolls up and has a curvature determined by the stress in the epitaxially grown Si:B/Si_{1- x} Ge_x :B heterostructure. Heating to 600 °C leads to a decrease of the radius of curvature consistent with the development of a large compressive biaxial stress during the reconfiguration of SrTiO₃ . The control of stresses via post-deposition processing provides a new route to the assembly of complex-oxide-based heterostructures in 3D geometry. The reconfiguration of metastable mechanical stressors enables i) synthesis of various types of strained superlattice structures that cannot be fabricated by direct growth and ii) technologies based on strain engineering of complex oxides via highly scalable lithographic processes and on large-area semiconductor substrates.

Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures

Recently, two-dimensional superconductivity was discovered at the oxide interface between KTaO_{3} and LaAlO_{3} (or EuO), whose superconducting transition temperature T_{c} is up to 2.2 K and exhibits strong crystalline-orientation dependence. However, the origin of the interfacial electron gas, which becomes superconducting at low temperatures, remains elusive. Taking the LaAlO_{3}/KTaO_{3}(111) interface as an example, we have demonstrated that there exists a critical LaAlO_{3} thickness of ∼3  nm. Namely, a thinner LaAlO_{3} film will give rise to an insulating but not conducting (or superconducting) interface. By in situ transport measurements during growth, we have also revealed that the critical thickness can be suppressed if exposure to oxygen is avoided. These observations, together with other control experiments, suggest strongly that the origination of the electron gas is dominated by the electron transfer that is from oxygen vacancies in the LaAlO_{3} film to the KTaO_{3} substrate.

Unravelling oxygen-vacancy-induced electron transfer at SrTiO3-based heterointerfaces by transport measurement during growth

Numerous studies have shown that oxygen vacancies play an important role on the formation of two-dimensional electron gas (2DEG) at SrTiO₃-based heterointerfaces. Previously, it is widely believed that the main mechanism is that the oxygen vacancies in SrTiO₃ directly contribute electrons to the 2DEG. Here, we performed transport measurements during the creation of 2DEG for depositing amorphous LaAlO₃ on SrTiO₃ substrates and related heterostructures. Our result suggests that, unlike the previous viewpoint, in this kind of 2DEG the determinant mechanism is the electron transfer from the oxygen vacancies in the film grown on SrTiO₃, rather than the oxygen vacancies in SrTiO₃ themselves. This effect is so striking that an amorphous film of less than 10% monolayer coverage on SrTiO₃, or equivalently 0.04 nm, can already generate a highly conducting 2DEG. The present result may have a general implication and provide a possible way to understand the long-standing debate on the origin of 2DEG at SrTiO₃-based heterointerfaces.

The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale

Defects in crystalline materials have a tremendous impact on their functional behavior. Controlling and tuning of these imperfections can lead to marked improvements in their physical, electrical, magnetic, and optical properties. Thanks to the development of aberration-corrected (scanning) transmission electron microscopy (STEM/TEM), direct visualization of defects at multiple length scales has now become possible, including those critically important defects at the atomic scale. Thorough understanding of the nature and dynamics of these defects is the key to unraveling the fundamental origins of structure-property relationships. Such insight can therefore allow the creation of new materials with desired properties through appropriate defect engineering. Herein, several examples of new insights obtained from representative functional materials are shown, including piezoelectrics/ferroelectrics, oxide interfaces, thermoelectrics, electrocatalysts, and 2D materials.

Strain-induced conductivity accelerated recoveries in LaAlO3/SrTiO3 heterostructure with millimeter scale

The transport and magnetic properties of LaAlO₃/SrTiO₃ (LAO/STO) heterostructure have been studied during cooling and warming. The strain gradient perpendicular to the surface of the heterostructure increases with the thickness of LAO film. The conductivity accelerated recoveries (CAR) are found at 80 K and 176 K in the interface of LAO/STO sample with millimeter scale, and are more obvious for thicker LAO layers during warming. These two recovering temperatures correspond to the migrating energies of oxygen single vacancy and divacancy trapped by polarized domain walls, separately. This indicated that domain walls diffuse along the longitudinal direction and expand to larger area due the strain gradient perpendicular to the interface. The stable and precise accelerating recovering temperatures make the sample at a larger scale a potential widely applied temperature standard reference. The magnetization measurements reveal the coexistence of paramagnetic and diamagnetic in the LAO/STO samples at whole temperature from 2 K to 300 K. The abnormal electric resistance rise is observed with the decreasing temperature below 25 K for the samples of 7 and 15 LAO layers. This anomaly is attributed to the Kondo effect below 25 K and weak anti-localization below 5 K due to the weightier paramagnetic content. The larger diamagnetic content suppresses these contributions in 25 LAO layers sample. This work provided an insightful view that the strain modified structure domain leads to the enhancement of CAR effect, which helps to achieve a better understanding of domain related physics in the LAO/STO system.

The transport and magnetic properties of LaAlO₃/SrTiO₃ (LAO/STO) heterostructure have been studied during cooling and warming.

First-principles studies of polar perovskite KTaO3 surfaces: structural reconstruction, charge compensation, and stability diagram

First-principles calculations predict a surface phase stability diagram for the polar perovskite KTaO₃.

Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

The interest in nanostructures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low temperature where no doping of silicon is expected. The presented experimental results and simulations of the ab initio quantum mechanics molecular dynamics prove that the structure of this new type of junction differs from all other known rectifying junctions at this time. An analysis of the junction formation has led to the conclusion that the chemical interaction between the surface atoms of crystalline silicon and the first atomic layer of the as-deposited amorphous boron is the dominant factor leading to the formation of a depletion zone in the crystalline silicon which originates from the surface. The simulation results show a very strong electric field across the c-Si/a-B interface systems where the charge transfer occurs mainly from the interface Si atoms to the neighboring B atoms. This electric field appears to be responsible for the creation of a depletion zone in the n-silicon resulting in a rectifying junction-formation between the n-silicon and the atomically thin boron layer.

Competition between Polar and Nonpolar Lattice Distortions in Oxide Quantum Wells: New Critical Thickness at Polar Interfaces

Two basic lattice distortions permeate the structural phase diagram of oxide perovskites: antiferrodistortive (AFD) rotations and tilts of the oxygen octahedral network and polar ferroelectric modes. With some notable exceptions, these two order parameters rarely coexist in a bulk crystal, and understanding their competition is a lively area of active research. Here we demonstrate, by using the LaAlO_{3}/SrTiO_{3} system as a test case, that quantum confinement can be a viable tool to shift the balance between AFD and polar modes and selectively stabilize one of the two phases. By combining scanning transmission electron microscopy (STEM) and first-principles-based models, we find a crossover between a bulklike LaAlO_{3} structure where AFD rotations prevail, to a strongly polar state with no AFD tilts at a thickness of approximately three unit cells; therefore, in addition to the celebrated electronic reconstruction, our work unveils a second critical thickness, related not to the electronic properties but to the structural ones. We discuss the implications of these findings, both for the specifics of the LaAlO_{3}/SrTiO_{3} system and for the general quest towards nanoscale control of material properties.

Dielectric collapse at the LaAlO3/SrTiO3 (001) heterointerface under applied electric field

The fascinating interfacial transport properties at the LaAlO₃/SrTiO₃ heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO₃ at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO₃/SrTiO₃ (001) heterointerface using soft and hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO₃ reveals that a significant potential drop on the SrTiO₃ side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO₃ films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10⁴ S cm⁻¹. Significantly, these films show room temperature mobilities up to 120 cm² V⁻¹ s⁻¹ even at carrier concentrations above 3 × 10²⁰ cm⁻³ together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.

With impressive electronic transport properties, wide bandgap perovskite oxides are promising transparent conductors. Prakash et al. report n-type BaSnO₃ films with room temperature conductivity exceeding 10⁴ S cm⁻¹ and investigate factors limiting carrier mobility.

Mobility Modulation and Suppression of Defect Formation in Two-Dimensional Electron Systems by Charge-Transfer Management

Electron mobility is one of the most-debated key attributes of low-dimensional electron systems emerging at complex oxide heterointerfaces. However, a common understanding of how electron mobility can be optimized in these systems has not been achieved so far. Here, we discuss a novel approach for achieving a systematic increase in electron mobility in polar/nonpolar perovskite interfaces by suppressing the thermodynamically required defect formation at the nanoscale. We discuss the transport properties of electron gases established at interfaces between SrTiO₃ and various polar perovskites [LaAlO₃, NdGaO₃, and (La,Sr)(Al,Ta)O₃], allowing for the individual variation of epitaxial strain and charge transfer among these epitaxial interfaces. As we show, the reduced charge transfer at (La,Sr)(Al,Ta)O₃/SrTiO₃ interfaces yields a systematic increase in electron mobility, while the reduced epitaxial strain has only minor impact. As thermodynamic continuum simulations suggest, the charge transfer across these interfaces affects both the spatial distribution of electrons and the background distribution of ionic defects, acting as major scatter centers within the potential well. Easing charge transfer in (La,Sr)(Al,Ta)O₃/SrTiO₃ yields an enlarged spatial separation of mobile charge carriers and scattering centers, as well as a reduced driving force for the formation of ionic defects at the nanoscale. Our results suggest a general recipe for achieving electron enhancements at oxide heterostructure interfaces and provide new perspectives for atomistic understanding of electron scattering in these systems.

Thermodynamic Ground States of Complex Oxide Heterointerfaces

The formation mechanism of 2-dimensional electron gases (2DEGs) at heterointerfaces between nominally insulating oxides is addressed with a thermodynamical approach. We provide a comprehensive analysis of the thermodynamic ground states of various 2DEG systems directly probed in high temperature equilibrium conductivity measurements. We unambiguously identify two distinct classes of oxide heterostructures: For epitaxial perovskite/perovskite heterointerfaces (LaAlO₃/SrTiO₃, NdGaO₃/SrTiO₃, and (La,Sr)(Al,Ta)O₃/SrTiO₃), we find the 2DEG formation being based on charge transfer into the interface, stabilized by the electric field in the space charge region. In contrast, for amorphous LaAlO₃/SrTiO₃ and epitaxial γ-Al₂O₃/SrTiO₃ heterostructures, the 2DEG formation mainly relies on the formation and accumulation of oxygen vacancies. This class of 2DEG structures exhibits an unstable interface reconstruction associated with a quenched nonequilibrium state.

Imaging pulsed laser deposition growth of homo-epitaxial SrTiO3 by low-energy electron microscopy

By combining low-energy electron microscopy with in situ pulsed laser deposition we have developed a new technique for film growth analysis, making use of both diffraction and real-space information. Working at the growth temperature, we can use: the intensity and profile variations of the specular beam to follow the coverage in a layer-by-layer fashion; real-space microscopy to follow e.g. atomic steps at the surface; and electron reflectivity to probe the unoccupied band structure of the grown material. Here, we demonstrate our methodology for homo-epitaxial growth of SrTiO₃. Interestingly, the same combination of techniques will also be applicable to hetero-epitaxial oxide growth, largely extending the scope of research possibilities.

Tunability of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface by strain-induced ferroelectricity

The two-dimensional electron gas (2DEG) formed at the interface between two insulating materials LaAlO₃ (LAO) and SrTiO₃ (STO) has recently generated a lot of interest. Here, based on first-principles density functional theory calculations, we investigate the existence and stability of the 2DEG under the application of a biaxial strain on the LAO/STO(001) heterostructure. The compressive strain induces ferroelectric (FE) polarization in STO, which allows for the tunability of the 2DEG by reversing the STO polarization orientation. We show that the formation of the 2DEG is unstable when LAO and STO have the same polarization direction. On the other hand, the 2DEG will always form if the two polarizations are in the opposite directions regardless of the LAO thickness, which is in contrast to the unstrained interface that has a critical thickness for stabilizing the 2DEG. We show that the underpinnings of this behavior are due to charge passivation and band gap alignment.

High-Throughput Design of Two-Dimensional Electron Gas Systems Based on Polar/Nonpolar Perovskite Oxide Heterostructures

The two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides such as LaAlO₃ and SrTiO₃ (STO) is of fundamental and practical interest because of its novel interfacial conductivity and its promising applications in next-generation nanoelectronic devices. Here we show that a group of combinatorial descriptors that characterize the polar character, lattice mismatch, band gap, and the band alignment between the perovskite-oxide-based band insulators and the STO substrate, can be introduced to realize a high-throughput (HT) design of SrTiO₃-based 2DEG systems from perovskite oxide quantum database. Equipped with these combinatorial descriptors, we have carried out a HT screening of all the polar perovskite compounds, uncovering 42 compounds of potential interests. Of these, Al-, Ga-, Sc-, and Ta-based compounds can form a 2DEG with STO, while In-based compounds exhibit a strain-induced strong polarization when deposited on STO substrate. In particular, the Ta-based compounds can form 2DEG with potentially high electron mobility at (TaO₂)⁺/(SrO)⁰ interface. Our approach, by defining materials descriptors solely based on the bulk materials properties, and by relying on the perovskite-oriented quantum materials repository, opens new avenues for the discovery of perovskite-oxide-based functional interface materials in a HT fashion.

Predictive Control over Charge Density in the Two-Dimensional Electron Gas at the Polar-Nonpolar NdTiO_{3}/SrTiO_{3} Interface

Through systematic control of the Nd concentration, we show that the carrier density of the two-dimensional electron gas (2DEG) in SrTiO_{3}/NdTiO_{3}/SrTiO_{3}(001) can be modulated over a wide range. We also demonstrate that the NdTiO_{3} in heterojunctions without a SrTiO_{3} cap is degraded by oxygen absorption from air, resulting in the immobilization of donor electrons that could otherwise contribute to the 2DEG. This system is, thus, an ideal model to understand and control the insulator-to-metal transition in a 2DEG based on both environmental conditions and film-growth processing parameters.

Thermal stability of 2DEG at amorphous LaAlO3/crystalline SrTiO3 heterointerfaces

At present, the generation of heterostructures with two dimensional electron gas (2DEG) in amorphous LaAlO3 (a-LAO)/SrTiO3 (STO) has been achieved. Herein, we analysed thermal stability of 2DEG at a-LAO/STO interfaces in comparison with 2DEG at crystalline LaAlO3 (c-LAO)/STO interfaces. To create 2DEG at LAO/STO interface, regardless of growing temperature from 25 to 700 °C, we found that environment with oxygen deficient during the deposition of LAO overlayer is essentially required. That indicates that the oxygen-poor condition in the system is more essential than the crystalline nature of LAO layer. 2DEG at a-LAO/STO interface is depleted upon ex situ annealing at 300 °C under 300 Torr of oxygen pressure, while that in c-LAO/STO interface is still maintained. Our result suggests that the LAO overlayer crystallinity critically affects the thermal-annealing-induced depletion of 2DEG at a-LAO/STO interface rather than the generation of 2DEG. We clearly provide that amorphous TiOx can efficiently prevent the thermal degradation of 2DEG at the a-LAO/STO interface, which gives a cornerstone for achieving thermal-stable 2DEG at a-LAO/STO interface.

Nano-scale polar-nonpolar oxide heterostructures for photocatalysis

We proposed based on first principles density functional theory calculations that a nano-scale thin film based on a polar-nonpolar transition-metal oxide heterostructure can be used as a highly-efficient photocatalyst. This is demonstrated using a SrTiO3/LaAlO3/SrTiO3 sandwich-like heterostructure with photocatalytic activity in the near-infrared region. The effect of the polar nature of LaAlO3 is two-fold. First, the induced electrostatic field accelerates the photo-generated electrons and holes into opposite directions and minimizes their recombination rates. Hence, the reduction and oxidation reactions can be instigated at the SrTiO3 surfaces located on the opposite sides of the heterostructure. Second, the electric field reduces the band gap of the system making it photoactive in the infrared region. We also show that charge separation can be enhanced by using compressive strain engineering that creates ferroelectric instability in STO. The proposed setup is ideal for tandem oxide photocatalysts especially when combined with photoactive polar materials.

Transport limits in defect-engineered LaAlO3/SrTiO3 bilayers

The electrical properties of the metallic interface in LaAlO3/SrTiO3 (LAO/STO) bilayers are investigated with focus on the role of cationic defects in thin film STO. Systematic growth-control of the STO thin film cation stoichiometry (defect-engineering) yields a relation between cationic defects in the STO layer and electronic properties of the bilayer-interface. Hall measurements reveal a stoichiometry-effect primarily on the electron mobility. The results indicate an enhancement of scattering processes in as-grown non-stoichiometric samples indicating an increased density of defects. Furthermore, we discuss the thermodynamic processes and defect-exchange reactions at the LAO/STO-bilayer interface determined in high temperature equilibrium. By quenching defined defect states from high temperature equilibrium, we finally connect equilibrium thermodynamics with room temperature transport. The results are consistent with the defect-chemistry model suggested for LAO/STO interfaces. Moreover, they reveal an additional healing process of extended defects in thin film STO.

Silicon surface deoxidation using strontium oxide deposited with the pulsed laser deposition technique

The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alternative buffer materials. In the present study the applicability of the chemically much more stable SrO in the process of native-oxide removal and silicon-surface stabilization was investigated using the pulsed-laser deposition technique (PLD), while the as-derived surfaces were analyzed in situ using reflection high-energy electron diffraction and ex situ using X-ray photoelectron spectroscopy, X-ray reflectivity, and atomic force microscopy. After the deposition of the SrO over Si/SiO2, in a vacuum, different annealing conditions, with the temperature ranging up to 850 °C, were applied. Because the deposition took place in a vacuum, a multilayer composed of SrO, Sr-silicate, modified Si, and Si as a substrate was initially formed. During the subsequent annealing the topmost layer epitaxially orders in the form of islands, while a further increase in the annealing temperature induced rapid desorption and surface deoxidation, leading to a 2 × 1 Sr-reconstructed silicon surface. However, the process is accompanied by distinctive surface roughening, and therefore the experimental conditions must be carefully optimized to minimize the effect. The results of the study revealed, for the first time, an effective pathway for the preparation of a SrO-induced buffer layer on a silicon substrate using PLD, which can be subsequently utilized for the epitaxial growth of functional oxides.

Oxygen vacancy clustering and pseudogap behaviour at the LaAlO₃/SrTiO₃ interface

The two-dimensional electron gas at the LaAlO3/SrTiO3 interface promises to add a new dimension to emerging electronic devices due to its high degree of tunability. Defects in the form of oxygen vacancies in titanate surfaces and interfaces, on the other hand, play a key role in the emergence of the ordered states and their tunability at the interface. On the basis of an effective model, we study the influence of oxygen vacancies on the superconductivity and ferromagnetism at the LaAlO3/SrTiO3 interface. Using the Bogoliubov-de Gennes formulation in conjunction with Monte Carlo simulation, we find a clustering of the oxygen vacancies at the interface that favours the formation of coexisting ferromagnetic puddles spatially separated from the superconductivity. We also find a carrier freeze-out at low temperatures, observed experimentally in a wide variety of samples. A sufficiently large amount of oxygen vacancies leads to pseudogap-like behaviour in the superconducting state.

The origin of two-dimensional electron gases at oxide interfaces: insights from theory

The response of oxide thin films to polar discontinuities at interfaces and surfaces has generated enormous activity due to the variety of interesting effects that it gives rise to. A case in point is the discovery of the electron gas at the interface between LaAlO3 and SrTiO3, which has since been shown to be quasi-two-dimensional, switchable, magnetic and/or superconducting. Despite these findings, the origin of the two-dimensional electron gas is highly debated and several possible mechanisms remain. Here we review the main proposed mechanisms and attempt to model expected effects in a quantitative way with the ambition of better constraining what effects can/cannot explain the observed phenomenology. We do it in the framework of a phenomenological model constructed to provide an understanding of the electronic and/or redox screening of the chemical charge in oxide heterostructures. We also discuss the effect of intermixing, both conserving and not conserving the total stoichiometry.

Phase segregation of superconductivity and ferromagnetism at the LaAlO3/SrTiO3 interface

The highly conductive two-dimensional electron gas formed at the interface between insulating SrTiO3 and LaAlO3 shows low-temperature superconductivity coexisting with inhomogeneous ferromagnetism. The Rashba spin-orbit interaction with the in-plane Zeeman field of the system favors p(x) ± ip(y)-wave superconductivity at finite momentum. Owing to the intrinsic disorder at the interface, the role of spatial inhomogeneity in the superconducting and ferromagnetic states becomes important. We find that, for strong disorder, the system breaks up into mutually excluded regions of superconductivity and ferromagnetism. This inhomogeneity-driven electronic phase separation accounts for the unusual coexistence of superconductivity and ferromagnetism observed at the interface.

Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: direct measurements with atomic-column spatial resolution

Using state-of-the-art, aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for an intrinsic electronic reconstruction at the LAO/STO interface is shown. Simultaneous measurements of interfacial electron density and system polarization are crucial for establishing the highly debated origin of the 2D electron gas.

Proposal of a one-dimensional electron gas in the steps at the LaAlO3-SrTiO3 interface

The two-dimensional electron gas at the interface between LaAlO(3) and SrTiO(3) has become one of the most fascinating and highly debated oxide systems of recent times. Here we propose that a one-dimensional electron gas can be engineered at the step edges of the LaAlO(3)/SrTiO(3) interface. These predictions are supported by first-principles calculations and electrostatic modeling which elucidate the origin of the one-dimensional electron gas as an electronic reconstruction to compensate a net surface charge in the step edge. The results suggest a novel route to increasing the functional density in these electronic interfaces.

Electrolyte gate-controlled Kondo effect in SrTiO3

We report low-temperature, high-field magnetotransport measurements of SrTiO(3) gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO(3) as an admixture of magnetic Ti(3+) ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.