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He X, Xu T, Xu X, Zeng Y, Xu J, Sun L, Wang C, Xing H, Wu B, Lu A, Liu D, Chen X, Chu J. In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition. Sci Rep 2014; 4:6544. [PMID: 25292447 PMCID: PMC4189024 DOI: 10.1038/srep06544] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2014] [Accepted: 09/15/2014] [Indexed: 02/05/2023] Open
Abstract
A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires visualization of domain wall dynamics in real space. Here, domain wall dynamics in VO2 insulator-metal phase transition was observed directly by in situ TEM at atom scale. Experimental results depict atom scale evolution of domain morphologies and domain wall exact positions in (202) and (040) planes referring to rutile structure at 50°C. In addition, microscopic mechanism of domain wall dynamics and accurate lattice basis vector relationship of two domains were investigated with the assistance of X-ray diffraction, ab initio calculations and image simulations. This work offers a route to atom scale tunable heterostructure device application.
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Affiliation(s)
- Xinfeng He
- 1] Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China [2]
| | - Tao Xu
- 1] SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China [2]
| | - Xiaofeng Xu
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Yijie Zeng
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Jing Xu
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Chunrui Wang
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Huaizhong Xing
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Binhe Wu
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Aijiang Lu
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China
| | - Dingquan Liu
- Optical Coatings and Materials Department, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500, Yutian Road, Shanghai 200083, China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500 Yutian Road, Shanghai 200083, China
| | - Junhao Chu
- National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500 Yutian Road, Shanghai 200083, China
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