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Suleiman AA, Parsi A, Razeghi M, Başçı U, Oh S, Pehlivanoğlu D, Jeong HY, Kang K, Kasırga TS. Ion transport induced room-temperature insulator-metal transition in single-crystalline Cu 2Se. NANOSCALE HORIZONS 2024; 9:1137-1145. [PMID: 38764332 DOI: 10.1039/d4nh00003j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2024]
Abstract
Cu2Se is a superionic conductor above 414 K, with ionic conductivities reaching that of molten salts. The superionic behavior results from hopping Cu ions between different crystallographic sites within the Se scaffold. However, the properties of Cu2Se below 414 K are far less known due to experimental limitations imposed by the bulk or polycrystalline samples that have been available so far. Here, we report the synthesis of ultra-thin, large-area single crystalline Cu2Se samples using a chemical vapor deposition method. The as-synthesized Cu2Se crystals exhibit optically and electrically detectable and controllable robust phases at room temperature and above. We demonstrate that Cu ion vacancies can be manipulated to induce an insulator-metal transition, which exhibits 6 orders of magnitude change in the electrical resistance of two terminal devices, accompanied by an optical change in the phase configuration. Our experiments show that the high mobility of the liquid-like Cu ion vacancies in Cu2Se causes macroscopic ordering in the Cu vacancies. Consequently, phase distribution over the crystals is not dictated by the diffusive motion of the ions but by the local energy minima formed due to the phase transition. As a result, long-range vacancy ordering of the crystal below 414 K becomes optically observable at a micrometer scale. This work demonstrates that Cu2Se could be a prototypical system where long-range ordering properties can be studied via electrical and optical methods.
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Affiliation(s)
- Abdulsalam Aji Suleiman
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
| | - Amir Parsi
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
| | - Mohammadali Razeghi
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
| | - Uğur Başçı
- Department of Physics, Bilkent University, Ankara 06800, Turkey
| | - Saeyoung Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | | | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - T Serkan Kasırga
- Bilkent University UNAM - Institute of Materials Science and Nanotechnology, Ankara, 06800, Turkey.
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2
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Feng X, Cheng R, Yin L, Wen Y, Jiang J, He J. Two-Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304708. [PMID: 37452605 DOI: 10.1002/adma.202304708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 07/06/2023] [Accepted: 07/12/2023] [Indexed: 07/18/2023]
Abstract
Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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3
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Xue JW, Xu CH, Zhao W, Chen HY, Xu JJ. Photoinduced Electrogenerated Chemiluminescence Imaging of Plasmonic Photoelectrochemistry at Single Nanocatalysts. NANO LETTERS 2023; 23:4572-4578. [PMID: 37171253 DOI: 10.1021/acs.nanolett.3c01028] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
In this study, we proposed a novel imaging technique, photoinduced electrogenerated chemiluminescence microscopy (PECLM), to monitor redox reactions driven by hot carriers on single gold nanoparticles (AuNPs) on TiO2. Under laser irradiation, plasmon-generated hot carriers were separated by an electric field, leaving hot holes on the surface of AuNPs to drive ECL reactions. PECL intensity was highly sensitive to the number of hot carriers. Through quantitative image analysis, we found that PECL density on individual AuNPs decreased significantly with an increase in particle diameter, indicating that particle size has a significant impact on photoelectrochemical conversion efficiency. For the first time, we verified the feasibility of PECLM in mapping the catalytic activity of single photocatalysts. PECLM opens a new prospect for the in situ imaging of photocatalysis in a high-throughput way, which not only facilitates the optimization of plasmonic photocatalysts but also contributes to the dynamic study of photocatalytic processes on micro/nanointerfaces.
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Affiliation(s)
- Jing-Wei Xue
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. China
| | - Cong-Hui Xu
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. China
- Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, P.R. China
| | - Wei Zhao
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. China
- Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, P.R. China
| | - Hong-Yuan Chen
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. China
| | - Jing-Juan Xu
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P.R. China
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4
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Qiu M, Yang W, Xu P, Huang T, Chen X, Dai N. Coexistent VO 2 (M) and VO 2 (B) Polymorphous Thin Films with Multiphase-Driven Insulator-Metal Transition. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091514. [PMID: 37177057 PMCID: PMC10180398 DOI: 10.3390/nano13091514] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Revised: 04/25/2023] [Accepted: 04/27/2023] [Indexed: 05/15/2023]
Abstract
Reversible insulator-metal transition (IMT) and structure phase change in vanadium dioxide (VO2) remain vital and challenging with complex polymorphs. It is always essential to understand the polymorphs that coexist in desired VO2 materials and their IMT behaviors. Different electrical properties and lattice alignments in VO2 (M) and VO2 (B) phases have enabled the creation of versatile functional devices. Here, we present polymorphous VO2 thin films with coexistent VO2 (M) and VO2 (B) phases and phase-dependent IMT behaviors. The presence of VO2 (B) phases may induce lattice distortions in VO2 (M). The plane spacing of (011)M in the VO2 (M) phase becomes widened, and the V-V and V-O vibrations shift when more VO2 (B) phase exists in the VO2 (M) matrix. Significantly, the coexisting VO2 (B) phases promote the IMT temperature of the polymorphous VO2 thin films. We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO2 materials and contribute to advanced electronic transistors and optoelectronic devices.
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Affiliation(s)
- Mengxia Qiu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wanli Yang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Peiran Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Tiantian Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xin Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Ning Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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5
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Razeghi M, Üstünçelik M, Shabani F, Demir HV, Kasırga TS. Plasmon-enhanced photoresponse of single silver nanowires and their network devices. NANOSCALE HORIZONS 2022; 7:396-402. [PMID: 35196367 DOI: 10.1039/d1nh00629k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The photo-bolometric effect is critically important in optoelectronic structures and devices employing metallic electrodes with nanoscale features due to heating caused by the plasmonic field enhancement. One peculiar case is individual silver nanowires (Ag NWs) and their networks. Ag NW-networks exhibit excellent thermal, electrical, and mechanical properties, providing a simple yet reliable alternative to common flexible transparent electrode materials used in optoelectronic devices. To date, there have been no reports on the photoresponse of Ag NWs. In this study, we show that single Ag NWs and networks of such Ag NWs possess a significant, intrinsic photoresponse, thanks to the photo-bolometric effect, as directly observed and measured using scanning photocurrent microscopy. Surface plasmon polaritons (SPPs) created at the contact metals or plasmons created at the nanowire-metal structures cause heating at the junctions where a plasmonic field enhancement is possible. The local heating of the Ag NWs results in negative photoconductance due to the bolometric effect. Here an open-circuit response due to the plasmon-enhanced Seebeck effect was recorded at the NW-metal contact junctions. The SPP-assisted bolometric effect is found to be further enhanced by decorating the Ag NWs with Ag nanoparticles. These observations are relevant to the use of metallic nanowires in plasmonic applications in particular and in optoelectronics in general. Our findings may pave the path for plasmonics-enabled sensing without spectroscopic detection.
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Affiliation(s)
- Mohammadali Razeghi
- Institute of Materials Science and Nanotechnology - UNAM, Bilkent University, Ankara 06800, Turkey.
| | - Merve Üstünçelik
- Institute of Materials Science and Nanotechnology - UNAM, Bilkent University, Ankara 06800, Turkey.
| | - Farzan Shabani
- Institute of Materials Science and Nanotechnology - UNAM, Bilkent University, Ankara 06800, Turkey.
| | - Hilmi Volkan Demir
- Institute of Materials Science and Nanotechnology - UNAM, Bilkent University, Ankara 06800, Turkey.
- Department of Physics, Bilkent University, Ankara 06800, Turkey
- Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800, Turkey
- LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering Nanyang Technological University, Singapore 639798, Singapore
| | - T Serkan Kasırga
- Institute of Materials Science and Nanotechnology - UNAM, Bilkent University, Ankara 06800, Turkey.
- Department of Physics, Bilkent University, Ankara 06800, Turkey
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6
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Jo MK, Heo H, Lee JH, Choi S, Kim A, Jeong HB, Jeong HY, Yuk JM, Eom D, Jahng J, Lee ES, Jung IY, Cho SR, Kim J, Cho S, Kang K, Song S. Enhancement of Photoresponse on Narrow-Bandgap Mott Insulator α-RuCl 3 via Intercalation. ACS NANO 2021; 15:18113-18124. [PMID: 34734700 DOI: 10.1021/acsnano.1c06752] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Charge doping to Mott insulators is critical to realize high-temperature superconductivity, quantum spin liquid state, and Majorana fermion, which would contribute to quantum computation. Mott insulators also have a great potential for optoelectronic applications; however, they showed insufficient photoresponse in previous reports. To enhance the photoresponse of Mott insulators, charge doping is a promising strategy since it leads to effective modification of electronic structure near the Fermi level. Intercalation, which is the ion insertion into the van der Waals gap of layered materials, is an effective charge-doping method without defect generation. Herein, we showed significant enhancement of optoelectronic properties of a layered Mott insulator, α-RuCl3, through electron doping by organic cation intercalation. The electron-doping results in substantial electronic structure change, leading to the bandgap shrinkage from 1.2 eV to 0.7 eV. Due to localized excessive electrons in RuCl3, distinct density of states is generated in the valence band, leading to the optical absorption change rather than metallic transition even in substantial doping concentration. The stable near-infrared photodetector using electronic modulated RuCl3 showed 50 times higher photoresponsivity and 3 times faster response time compared to those of pristine RuCl3, which contributes to overcoming the disadvantage of a Mott insulator as a promising optoelectronic device and expanding the material libraries.
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Affiliation(s)
- Min-Kyung Jo
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hoseok Heo
- Inorganic Material Lab., Samsung Advanced Institute of Technology (SAIT), Suwon 16678, Korea
| | - Jung-Hoon Lee
- Computational Science Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Seungwook Choi
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Ansoon Kim
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Han Beom Jeong
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jong Min Yuk
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Daejin Eom
- Atom-scale Measurement Team, Advanced Instrumentation Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Junghoon Jahng
- Hyperspectral Nano-imaging Lab, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Eun Seong Lee
- Hyperspectral Nano-imaging Lab, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - In-Young Jung
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongtae Kim
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
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7
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Cheng S, Lee MH, Tran R, Shi Y, Li X, Navarro H, Adda C, Meng Q, Chen LQ, Dynes RC, Ong SP, Schuller IK, Zhu Y. Inherent stochasticity during insulator-metal transition in VO 2. Proc Natl Acad Sci U S A 2021; 118:e2105895118. [PMID: 34493666 PMCID: PMC8449351 DOI: 10.1073/pnas.2105895118] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 08/04/2021] [Indexed: 11/18/2022] Open
Abstract
Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator-metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO2 at local areas in planar VO2/TiO2 device configuration under external biasing. After each resistive switching, different VO2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO2 as the key material of neuromorphic computing.
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Affiliation(s)
- Shaobo Cheng
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973
| | - Min-Han Lee
- Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093
- Department of Physics, Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093
| | - Richard Tran
- Department of NanoEngineering, University of California San Diego, La Jolla, CA 92093
| | - Yin Shi
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
| | - Xing Li
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Henry Navarro
- Department of Physics, Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093
| | - Coline Adda
- Department of Physics, Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093
| | - Qingping Meng
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
| | - R C Dynes
- Department of Physics, Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093;
| | - Shyue Ping Ong
- Department of NanoEngineering, University of California San Diego, La Jolla, CA 92093
| | - Ivan K Schuller
- Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093
- Department of Physics, Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093
| | - Yimei Zhu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973;
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8
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Yin C, Gong C, Chu J, Wang X, Yan C, Qian S, Wang Y, Rao G, Wang H, Liu Y, Wang X, Wang J, Hu W, Li C, Xiong J. Ultrabroadband Photodetectors up to 10.6 µm Based on 2D Fe 3 O 4 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002237. [PMID: 32406177 DOI: 10.1002/adma.202002237] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Accepted: 04/17/2020] [Indexed: 05/06/2023]
Abstract
The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable nonlayered ultrathin Fe3 O4 nanosheets synthesized via a space-confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity (R) of 561.2 A W-1 , external quantum efficiency (EQE) of 6.6 × 103 %, and detectivity (D*) of 7.42 × 108 Jones are achieved at the wavelength of 10.6 µm. The multimechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photoresponse mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.
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Affiliation(s)
- Chujun Yin
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Junwei Chu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Chaoyi Yan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Shifeng Qian
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Gaofeng Rao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hongbo Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yuqing Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Chaobo Li
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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9
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Zhou J, Xie M, Ji H, Cui A, Ye Y, Jiang K, Shang L, Zhang J, Hu Z, Chu J. Mixed-Dimensional Van der Waals Heterostructure Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18674-18682. [PMID: 32208640 DOI: 10.1021/acsami.0c01076] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Van der Waals (vdW) heterostructures, integrated two-dimensional (2D) materials with various functional materials, provide a distinctive platform for next-generation optoelectronics with unique flexibility and high performance. However, exploring the vdW heterostructures combined with strongly correlated electronic materials is hitherto rare. Herein, a novel temperature-sensitive photodetector based on the GaSe/VO2 mixed-dimensional vdW heterostructure is discovered. Compared with previous devices, our photodetector exhibits excellent enhanced performance, with an external quantum efficiency of up to 109.6% and the highest responsivity (358.1 mA·W-1) under a 405 nm laser. Interestingly, we show that the heterostructure overcomes the limitation of a single material under the interaction between VO2 and GaSe, where the photoresponse is highly sensitive to temperature and can be further vanished at the critical value. The metal-insulator transition of VO2, which controls the peculiar band-structure evolution across the heterointerface, is demonstrated to manipulate the photoresponse variation. This study enables us to elucidate the method of manipulating 2D materials by strongly correlated electronic materials, paving the way for developing high-performance and special optoelectronic applications.
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Affiliation(s)
- Jiaoyan Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Mingzhang Xie
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Huan Ji
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yan Ye
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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10
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Orive J, Fernández de Luis R, Larrea ES, Martínez-Amesti A, Altomare A, Rizzi R, Lezama L, Arriortua MI, Gómez-Cámer JL, Jauregui M, Casas-Cabanas M, Lisoni J. Exploring new hydrated delta type vanadium oxides for lithium intercalation. Dalton Trans 2020; 49:3856-3868. [PMID: 31850463 DOI: 10.1039/c9dt04088a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Three hydrated double layered vanadium oxides, namely Na0.35V2O5·0.8(H2O), K0.36(H3O)0.15V2O5 and (NH4)0.37V2O5·0.15(H2O), were obtained by using mild hydrothermal conditions. Their delta type structural frameworks were solved by high-resolution synchrotron X-ray powder diffraction and the interlayer spacings were interpreted from difference Fourier maps. The inter-slab distances are modulated by the water content and the special arrangements of the alkali and ammonium cations. The XPS measurements denote mixed valence systems with high contents of V4+ ions up to 40%. The monitoring of the V4+ EPR signal over time suggests a reduction of the electronic delocalization on account of the partial oxidation to V5+. The electrochemical performance of the active phases is strongly conditioned by the vacuum-drying process of the electrodes, showing better capacity retention when vacuum is not applied. In situ X-ray diffraction shows a structural mechanism of contraction/expansion of the bilayers upon lithium insertion/extraction where the alkali ions behave as structural stabilizers. Galvanostatic cycling at very low current density implies migration of the alkali "pillars" triggering the collapse of the structure.
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Affiliation(s)
- Joseba Orive
- Dpto. de Ingeniería Química, Biotecnología y Materiales, FCFM, Universidad de Chile, Av. Beauchef 851, Santiago 8370448, Chile.
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11
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Zhou X, Tokina MV, Tomko JA, Braun JL, Hopkins PE, Prezhdo OV. Thin Ti adhesion layer breaks bottleneck to hot hole relaxation in Au films. J Chem Phys 2019; 150:184701. [DOI: 10.1063/1.5096901] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
Affiliation(s)
- Xin Zhou
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, People’s Republic of China
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, USA
| | - Marina V. Tokina
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, USA
| | - John A. Tomko
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22903, USA
| | - Jeffrey L. Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22903, USA
| | - Patrick E. Hopkins
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22903, USA
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22903, USA
- Department of Physics, University of Virginia, Charlottesville, Virginia 22903, USA
| | - Oleg V. Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, USA
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12
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Mohammad Haniff MAS, Zainal Ariffin NH, Hafiz SM, Ooi PC, Syono MI, Hashim AM. Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4625-4636. [PMID: 30618229 DOI: 10.1021/acsami.8b19043] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We demonstrated a simple and scalable fabrication route of a nitrogen-doped reduced graphene oxide (N-rGO) photodetector on an 8 in. wafer-scale. The N-rGO was prepared through in situ plasma treatment in an acetylene-ammonia atmosphere to achieve an n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition, and electrical properties of the N-rGO were carefully characterized and used for the device fabrication. The N-rGO devices were fabricated in a simple metal-semiconductor-metal structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W-1 at 1.0 V, which is about 2 orders of magnitude higher compared to a pristine graphene and wide-band photoinduced response from the visible to the near-infrared region with increasing sensitivity in the order of 785, 632.8, and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of the photoinduced response to any position of local laser excitation with respect to the electrodes. The excellent features of wafer-scale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.
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Affiliation(s)
| | - Nur Hamizah Zainal Ariffin
- Advanced Devices and Materials Engineering Research Lab, Department of Electronic Systems Engineering, Malaysia-Japan International Institute of Technology , Universiti Teknologi Malaysia , 54100 Kuala Lumpur , Malaysia
| | - Syed Muhammad Hafiz
- Materials Synthesis & Characterization Laboratory, Institute of Advanced Technology , Universiti Putra Malaysia , 43400 Serdang , Malaysia
| | - Poh Choon Ooi
- Institute of Microengineering and Nanoelectronics , Universiti Kebangsaan Malaysia , 43600 Bangi , Malaysia
| | - Mohd Ismahadi Syono
- Advanced Devices Lab , MIMOS Berhad , Technology Park Malaysia , 57000 Kuala Lumpur , Malaysia
| | - Abdul Manaf Hashim
- Advanced Devices and Materials Engineering Research Lab, Department of Electronic Systems Engineering, Malaysia-Japan International Institute of Technology , Universiti Teknologi Malaysia , 54100 Kuala Lumpur , Malaysia
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13
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Zhai ZH, Chen SC, Du LH, Zhong SC, Huang W, Li ZR, Schneider H, Shi Q, Zhu LG. Giant impact of self-photothermal on light-induced ultrafast insulator-to-metal transition in VO 2 nanofilms at terahertz frequency. OPTICS EXPRESS 2018; 26:28051-28066. [PMID: 30469861 DOI: 10.1364/oe.26.028051] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2018] [Accepted: 09/30/2018] [Indexed: 06/09/2023]
Abstract
Ultrafast detection and switching of light are key processes in high-speed optoelectronic devices. However, the performances of VO2-based optoelectronics are strongly degraded by photothermal. The mechanism of the latter is still unclear. Here, by using femtosecond-laser (fs-laser) driven kinetic terahertz wave absorption, we quantitatively separate slow photothermal response and ultrafast photodoping response (e.g. light-induced insulator-to-metal transition) from second- to picosecond-timescales, and discover the competing interplay between them. With self-photothermal (mainly determined by fs-laser pulse repetition rate and pump fluence), the ultrafast transition time was degraded by 190% from 50 ps to 95 ps, the ultrafast transition threshold was decreased to 82% from 11mJ/cm2 to 9mJ/cm2, while the amplitudes of the two photoresponse are competing. Percolation theory, along with the macroscopic conductivity response, is used to explain the competing interplay. Our findings are relevant for designing and optimizing VO2-based ultrafast optoelectronic devices.
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14
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Ke Y, Wang S, Liu G, Li M, White TJ, Long Y. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. SMALL 2018; 14:e1802025. [PMID: 30085392 DOI: 10.1002/smll.201802025] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/24/2018] [Indexed: 05/12/2023]
Affiliation(s)
- Yujie Ke
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Shancheng Wang
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Guowei Liu
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Ming Li
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanotechnology; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P. R. China
| | - Timothy J. White
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE); Nanomaterials for Energy and Energy-Water Nexus (NEW); Campus for Research Excellence and Technological Enterprise (CREATE); 1 Create Way Singapore 138602 Singapore
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15
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Kumar M, Patel M, Kim J, Lim D. Enhanced broadband photoresponse of a self-powered photodetector based on vertically grown SnS layers via the pyro-phototronic effect. NANOSCALE 2017; 9:19201-19208. [PMID: 29186225 DOI: 10.1039/c7nr07120e] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here, we demonstrate the broadband photoresponse from ultraviolet (365 nm) to near-infrared (850 nm) wavelengths from a photodetector based on vertically grown SnS layers. Particularly, the photoinduced current density of the device increased from 100 to 470 μA cm-2 with a wavelength of 760 nm and an intensity of 7 mW cm-2 by utilizing the pyro-phototronic potential. In addition, the photodetector demonstrated ultrafast response rates of ∼12 μs for the rise and ∼55 μs for the decay times over the studied range. Moreover, a good photoresponsivity of 13 mA W-1 and a high photodetectivity of 3 × 1014 Jones at a wavelength of 760 nm with an intensity of 7 mW cm-2 were measured, representing enhancements of 340% and 3960%, respectively, with the pyroelectric potential. This excellent broadband performance was attributed to the photon-induced pyroelectric effect in the vertically grown SnS layers, which also modulated the optoelectronic processes. This novel approach will open a new avenue to design a broadband ultrafast device for advanced optoelectronics.
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Affiliation(s)
- Mohit Kumar
- Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 406772, Republic of Korea.
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16
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Tsai Y, Chu Z, Han Y, Chuu CP, Wu D, Johnson A, Cheng F, Chou MY, Muller DA, Li X, Lai K, Shih CK. Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1703680. [PMID: 28891108 DOI: 10.1002/adma.201703680] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2017] [Revised: 07/24/2017] [Indexed: 06/07/2023]
Abstract
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition-metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multijunctions is critical to achieve carrier confinement. Analogously, successful synthesis of a monolayer WS2 /WS2(1-x) Se2x /WS2 multijunction lateral heterostructure via direct growth by chemical vapor deposition is reported. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine their lateral compositional profile. More importantly, using microwave impedance microscopy, it is demonstrated that the local photoconductivity in the alloy region can be tailored and enhanced by two orders of magnitude over pure WS2 . Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. This work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.
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Affiliation(s)
- Yutsung Tsai
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Zhaodong Chu
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Yimo Han
- School of Applied and Engineering Physics, Cornell University Ithaca, Ithaca, NY, 14853, USA
| | - Chih-Piao Chuu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- Physics Division, National Center for Theoretical Sciences, Hsinchu, 300, Taiwan
| | - Di Wu
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Alex Johnson
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Fei Cheng
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Mei-Yin Chou
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University Ithaca, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Xiaoqin Li
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Keji Lai
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Chih-Kang Shih
- Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA
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17
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Sohn JI, Cha SN, Son SB, Kim JM, Welland ME, Hong WK. Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO 2 nanobeams. NANOSCALE 2017; 9:8200-8206. [PMID: 28580984 DOI: 10.1039/c7nr00318h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO2 nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO2 plays a critical role in both the electrical and structural phase transitions.
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Affiliation(s)
- Jung Inn Sohn
- Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
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18
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Zhang Z, Guo H, Ding W, Zhang B, Lu Y, Ke X, Liu W, Chen F, Sui M. Nanoscale Engineering in VO 2 Nanowires via Direct Electron Writing Process. NANO LETTERS 2017; 17:851-855. [PMID: 28080071 DOI: 10.1021/acs.nanolett.6b04118] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO2) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO2. This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.
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Affiliation(s)
- Zhenhua Zhang
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Wenqiang Ding
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Bin Zhang
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Yue Lu
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Xiaoxing Ke
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | - Weiwei Liu
- Beijing Computational Science Research Center , Beijing 100084, China
| | - Furong Chen
- Department of Engineering and System Science, National Tsing Hua University , Hsinchu 300, Taiwan
| | - Manling Sui
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
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19
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Wu H, Fu Q, Bao X. In situ Raman spectroscopy study of metal-enhanced hydrogenation and dehydrogenation of VO2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:434003. [PMID: 27603090 DOI: 10.1088/0953-8984/28/43/434003] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Vanadium dioxide (VO2) has a phase transition from insulator to metal at 340 K, and this transition can be strongly modified by hydrogenation. In this work, two dimensional (2D) VO2 sheets have been grown on Si(1 1 1) surfaces through chemical vapor deposition, and metal (Au, Pt) thin films were deposited on VO2 surfaces by sputtering. The hydrogenation and dehydrogenation of VO2 and metal-decorated VO2 structures in H2 and in air were in situ studied by Raman. We found that hydrogenation and dehydrogenation temperatures have been significantly decreased with the VO2 surface decorated by Au and Pt. The enhanced hydrogenation and dehydrogenation reactions can be attributed to catalytic dissociation of H2 and O2 molecules on metal surfaces and subsequent spillover of dissociated H and O atoms to the oxide surfaces.
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Affiliation(s)
- Hao Wu
- Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
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20
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Li Z, Guo Y, Hu Z, Su J, Zhao J, Wu J, Wu J, Zhao Y, Wu C, Xie Y. Hydrogen Treatment for Superparamagnetic VO2
Nanowires with Large Room-Temperature Magnetoresistance. Angew Chem Int Ed Engl 2016. [DOI: 10.1002/ange.201603406] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Zejun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Zhenpeng Hu
- School of Physics; Nankai University; Tianjin 300071 P.R. China
| | - Jihu Su
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Jiyin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Junchi Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Jiajing Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Yingcheng Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
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21
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Li Z, Guo Y, Hu Z, Su J, Zhao J, Wu J, Wu J, Zhao Y, Wu C, Xie Y. Hydrogen Treatment for Superparamagnetic VO2 Nanowires with Large Room-Temperature Magnetoresistance. Angew Chem Int Ed Engl 2016; 55:8018-22. [PMID: 27265205 DOI: 10.1002/anie.201603406] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2016] [Indexed: 11/11/2022]
Abstract
One-dimensional (1D) transition metal oxide (TMO) nanostructures are actively pursued in spintronic devices owing to their nontrivial d electron magnetism and confined electron transport pathways. However, for TMOs, the realization of 1D structures with long-range magnetic order to achieve a sensitive magnetoelectric response near room temperature has been a longstanding challenge. Herein, we exploit a chemical hydric effect to regulate the spin structure of 1D V-V atomic chains in monoclinic VO2 nanowires. Hydrogen treatment introduced V(3+) (3d(2) ) ions into the 1D zigzag V-V chains, triggering the formation of ferromagnetically coupled V(3+) -V(4+) dimers to produce 1D superparamagnetic chains and achieve large room-temperature negative magnetoresistance (-23.9 %, 300 K, 0.5 T). This approach offers new opportunities to regulate the spin structure of 1D nanostructures to control the intrinsic magnetoelectric properties of spintronic materials.
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Affiliation(s)
- Zejun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Zhenpeng Hu
- School of Physics, Nankai University, Tianjin, 300071, P.R. China
| | - Jihu Su
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Jiyin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Junchi Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Jiajing Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Yingcheng Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China.
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
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22
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Kim HT, Kim M, Sohn A, Slusar T, Seo G, Cheong H, Kim DW. Photoheat-induced Schottky nanojunction and indirect Mott transition in VO₂: photocurrent analysis. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:085602. [PMID: 26829104 DOI: 10.1088/0953-8984/28/8/085602] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d(1)), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d(1)) for the Mott insulator is screened (trapped) by the indirect band (impurities).
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Affiliation(s)
- Hyun-Tak Kim
- Metal-Insulator-Transition Center, Electronics & Telecommunications Research Institute, Daejeon 305-700, Korea. School of Advanced Device Technology, Korea University of Science and Technology, Daejeon 305-333, Korea
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Ahmad S, Kanaujia P, Beeson HJ, Abate A, Deschler F, Credgington D, Steiner U, Prakash GV, Baumberg JJ. Strong Photocurrent from Two-Dimensional Excitons in Solution-Processed Stacked Perovskite Semiconductor Sheets. ACS APPLIED MATERIALS & INTERFACES 2015; 7:25227-36. [PMID: 26497547 PMCID: PMC4666456 DOI: 10.1021/acsami.5b07026] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Room-temperature photocurrent measurements in two-dimensional (2D) inorganic-organic perovskite devices reveal that excitons strongly contribute to the photocurrents despite possessing binding energies over 10 times larger than the thermal energies. The p-type (C6H9C2H4NH3)2PbI4 liberates photocarriers at metallic Schottky aluminum contacts, but incorporating electron- and hole-transport layers enhances the extracted photocurrents by 100-fold. A further 10-fold gain is found when TiO2 nanoparticles are directly integrated into the perovskite layers, although the 2D exciton semiconducting layers are not significantly disrupted. These results show that strong excitonic materials may be useful as photovoltaic materials despite high exciton binding energies and suggest mechanisms to better understand the photovoltaic properties of the related three-dimensional perovskites.
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Affiliation(s)
- Shahab Ahmad
- Nanophotonics Laboratory,
Department of Physics, Indian Institute
of Technology Delhi, New Delhi 110 016, India
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
- E-mail:
| | - Pawan
K. Kanaujia
- Nanophotonics Laboratory,
Department of Physics, Indian Institute
of Technology Delhi, New Delhi 110 016, India
| | - Harry J. Beeson
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
| | - Antonio Abate
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
| | - Felix Deschler
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
| | - Dan Credgington
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
| | - Ullrich Steiner
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
- Adolphe Merkle Institute, University of
Fribourg, Chemin des
Verdiers 4, CH-1700 Fribourg, Switzerland
| | - G. Vijaya Prakash
- Nanophotonics Laboratory,
Department of Physics, Indian Institute
of Technology Delhi, New Delhi 110 016, India
- E-mail:
| | - Jeremy J. Baumberg
- Nanophotonics Centre and Optoelectronics Group, Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, U.K.
- E-mail:
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24
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Martens K, Jeong JW, Aetukuri N, Rettner C, Shukla N, Freeman E, Esfahani DN, Peeters FM, Topuria T, Rice PM, Volodin A, Douhard B, Vandervorst W, Samant MG, Datta S, Parkin SSP. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2). PHYSICAL REVIEW LETTERS 2015; 115:196401. [PMID: 26588400 DOI: 10.1103/physrevlett.115.196401] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2015] [Indexed: 06/05/2023]
Abstract
The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13) cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3) cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2).
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Affiliation(s)
- K Martens
- IBM Research-Almaden, San Jose, California 95120, USA
- ESAT Department, KU Leuven, Leuven BE-3001, Belgium
- IMEC, Kapeldreef 75, Leuven BE-3001, Belgium
| | - J W Jeong
- IBM Research-Almaden, San Jose, California 95120, USA
| | - N Aetukuri
- IBM Research-Almaden, San Jose, California 95120, USA
| | - C Rettner
- IBM Research-Almaden, San Jose, California 95120, USA
| | - N Shukla
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - E Freeman
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - D N Esfahani
- Physics Department, University of Antwerp, Groenenborgerlaan 171 BE-2020, Antwerp BE-2020, Belgium
| | - F M Peeters
- Physics Department, University of Antwerp, Groenenborgerlaan 171 BE-2020, Antwerp BE-2020, Belgium
| | - T Topuria
- IBM Research-Almaden, San Jose, California 95120, USA
| | - P M Rice
- IBM Research-Almaden, San Jose, California 95120, USA
| | - A Volodin
- Department of Physics and Astronomy, KU Leuven, Leuven BE-3001, Belgium
| | - B Douhard
- IMEC, Kapeldreef 75, Leuven BE-3001, Belgium
| | - W Vandervorst
- IMEC, Kapeldreef 75, Leuven BE-3001, Belgium
- Department of Physics and Astronomy, KU Leuven, Leuven BE-3001, Belgium
| | - M G Samant
- IBM Research-Almaden, San Jose, California 95120, USA
| | - S Datta
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - S S P Parkin
- IBM Research-Almaden, San Jose, California 95120, USA
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25
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Wang X, Gao H. Distinguishing the Photothermal and Photoinjection Effects in Vanadium Dioxide Nanowires. NANO LETTERS 2015; 15:7037-7042. [PMID: 26422776 DOI: 10.1021/acs.nanolett.5b03086] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Vanadium dioxide (VO2) has drawn significant attention for its unique metal-to-insulator transition near the room temperature. The high electrical resistivity below the transition temperature (∼68 °C) is a result of the strong electron correlation with the assistance of lattice (Peierls) distortion. Theoretical calculations indicated that the strong interelectron interactions might induce intriguing optoelectronic phenomena, such as the multiple exciton generation (MEG), a process desirable for efficient optoelectronics and photovoltaics. However, the resistivity of VO2 is quite temperature sensitive, and therefore, the light-induced conductivity in VO2 has often been attributed to the photothermal effects. In this work, we distinguished the photothermal and photoinjection effects in VO2 nanowires by varying the chopping frequency of the optical illumination. We found that, in our VO2 nanowires, the relatively slow photothermal processes can be well suppressed when the chopping frequency is >2 kHz, whereas the fast photoinjection component (direct photoexcitation of charge carriers) remains constant at all chopping frequencies. By separating the photothermal and photoinjection processes, our work set the basis for further studies of carrier dynamics under optical excitations in strongly correlated materials.
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Affiliation(s)
- Xi Wang
- Department of Physics and ‡Materials Science Program, Florida State University , Tallahassee, Florida 32306, United States
| | - Hanwei Gao
- Department of Physics and ‡Materials Science Program, Florida State University , Tallahassee, Florida 32306, United States
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
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26
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Ren Q, Wan J, Gao Y. Theoretical Study of Electronic Properties of X-Doped (X = F, Cl, Br, I) VO2 Nanoparticles for Thermochromic Energy-Saving Foils. J Phys Chem A 2014; 118:11114-8. [DOI: 10.1021/jp5092448] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Qinghua Ren
- Department of Chemistry, College of Sciences, and ‡School of Materials Science and
Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Jinyu Wan
- Department of Chemistry, College of Sciences, and ‡School of Materials Science and
Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Yanfeng Gao
- Department of Chemistry, College of Sciences, and ‡School of Materials Science and
Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
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27
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Buchs G, Bagiante S, Steele GA. Identifying signatures of photothermal current in a double-gated semiconducting nanotube. Nat Commun 2014; 5:4987. [DOI: 10.1038/ncomms5987] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2014] [Accepted: 08/15/2014] [Indexed: 11/09/2022] Open
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28
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Lin J, Ji H, Swift MW, Hardy WJ, Peng Z, Fan X, Nevidomskyy AH, Tour JM, Natelson D. Hydrogen diffusion and stabilization in single-crystal VO2 micro/nanobeams by direct atomic hydrogenation. NANO LETTERS 2014; 14:5445-5451. [PMID: 25148601 DOI: 10.1021/nl5030694] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the doping process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ∼340 K between a high-temperature, rutile, metallic phase and a low-temperature, monoclinic, insulating phase with a resistance exhibiting a semiconductor-like temperature dependence. Atomic hydrogenation results in stabilization of the metallic phase of VO2 micro/nanobeams down to 2 K, the lowest point we could reach in our measurement setup. Optical characterization shows that hydrogen atoms prefer to diffuse along the c axis of rutile (a axis of monoclinic) VO2, along the oxygen "channels". Based on observing the movement of the hydrogen diffusion front in single crystalline VO2 beams, we estimate the diffusion constant for hydrogen along the c axis of the rutile phase to be 6.7 × 10(-10) cm(2)/s at approximately 373 K, exceeding the value in isostructural TiO2 by ∼38×. Moreover, we find that the diffusion constant along the c axis of the rutile phase exceeds that along the equivalent a axis of the monoclinic phase by at least 3 orders of magnitude. This remarkable change in kinetics must originate from the distortion of the "channels" when the unit cell doubles along this direction upon cooling into the monoclinic structure. Ab initio calculation results are in good agreement with the experimental trends in the relative kinetics of the two phases. This raises the possibility of a switchable membrane for hydrogen transport.
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Affiliation(s)
- Jian Lin
- Department of Mechanical Engineering and Material Science, ‡Smalley Institute for Nanoscale Science and Technology, §Department of Physics and Astronomy, ⊥Department of Chemistry, ∥Department of Electrical and Computer Engineering, Rice University , 6100 Main Street, Houston, Texas 77005, United States
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29
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Bahlawane N, Lenoble D. Vanadium Oxide Compounds:Structure, Properties, and Growth from the Gas Phase. ACTA ACUST UNITED AC 2014. [DOI: 10.1002/cvde.201400057] [Citation(s) in RCA: 104] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Naoufal Bahlawane
- Nanomaterials Research Unit, SAM Department; Centre de Recherche Public - Gabriel Lippmann; 41, rue du Brill 4422 Belvaux (Luxembourg)
| | - Damien Lenoble
- Nanomaterials Research Unit, SAM Department; Centre de Recherche Public - Gabriel Lippmann; 41, rue du Brill 4422 Belvaux (Luxembourg)
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30
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Favaloro T, Suh J, Vermeersch B, Liu K, Gu Y, Chen LQ, Wang KX, Wu J, Shakouri A. Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams. NANO LETTERS 2014; 14:2394-2400. [PMID: 24735496 DOI: 10.1021/nl500042x] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The metal to insulator transition (MIT) of strongly correlated materials is subject to strong lattice coupling, which brings about the unique one-dimensional alignment of metal-insulator (M-I) domains along nanowires or nanobeams. Many studies have investigated the effects of stress on the MIT and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, we use thermoreflectance microscopy to create two-dimensional temperature maps of single-crystalline VO2 nanobeams under external bias in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the M-I domain boundaries, indicating the significance of the domain walls and band offsets. Utilizing the thermoreflectance technique, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO2 through detection of the opposite polarity of their respective thermoreflectance coefficients. Microelasticity theory was employed to predict favorable domain wall configurations, confirming the monoclinic phase identification.
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Affiliation(s)
- Tela Favaloro
- Baskin School of Engineering, University of California , Santa Cruz, California 95064, United States
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31
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Park JH, Coy JM, Kasirga TS, Huang C, Fei Z, Hunter S, Cobden DH. Measurement of a solid-state triple point at the metal-insulator transition in VO2. Nature 2013; 500:431-4. [PMID: 23969461 DOI: 10.1038/nature12425] [Citation(s) in RCA: 146] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2013] [Accepted: 06/24/2013] [Indexed: 11/09/2022]
Abstract
First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis and cracking. The situation is worse near a triple point, where more than two phases are involved. The well-known metal-insulator transition in vanadium dioxide, a popular candidate for ultrafast optical and electrical switching applications, is a case in point. Even though VO2 is one of the simplest strongly correlated materials, experimental difficulties posed by the first-order nature of the metal-insulator transition as well as the involvement of at least two competing insulating phases have led to persistent controversy about its nature. Here we show that studying single-crystal VO2 nanobeams in a purpose-built nanomechanical strain apparatus allows investigation of this prototypical phase transition with unprecedented control and precision. Our results include the striking finding that the triple point of the metallic phase and two insulating phases is at the transition temperature, Ttr = Tc, which we determine to be 65.0 ± 0.1 °C. The findings have profound implications for the mechanism of the metal-insulator transition in VO2, but they also demonstrate the importance of this approach for mastering phase transitions in many other strongly correlated materials, such as manganites and iron-based superconductors.
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Affiliation(s)
- Jae Hyung Park
- Department of Physics, University of Washington, Seattle, Washington 98195, USA
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32
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Chang SJ, Hong WK, Kim HJ, Lee JB, Yoon J, Ko HC, Huh YS. Probing the photothermally induced phase transitions in single-crystalline vanadium dioxide nanobeams. NANOTECHNOLOGY 2013; 24:345701. [PMID: 23900193 DOI: 10.1088/0957-4484/24/34/345701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Using Raman spectroscopy, we demonstrated photothermally induced crystallographic phase transitions of vanadium dioxide (VO2) nanobeams clamped to and free-standing on a substrate. Compared to the temperature-dependent Raman measurements, the laser-power-dependent Raman characteristics provide substantial evidence for the photothermal origin of the phase transitions of the VO2 nanobeams. The laser power necessary to cause phase transitions in the free-standing nanobeam was approximately eight times smaller than the laser power used in the substrate-clamped nanobeam. Our study will enhance the understanding of the complex phase transitions of strongly correlated oxides and thereby provide a foundation for engineering desirable properties in novel devices.
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Affiliation(s)
- Sung-Jin Chang
- Division of Materials Science, Korea Basic Science Institute, Daejeon 305-333, Korea
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33
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Yao T, Liu L, Xiao C, Zhang X, Liu Q, Wei S, Xie Y. Ultrathin Nanosheets of Half-Metallic Monoclinic Vanadium Dioxide with a Thermally Induced Phase Transition. Angew Chem Int Ed Engl 2013. [DOI: 10.1002/ange.201302891] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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34
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Yao T, Liu L, Xiao C, Zhang X, Liu Q, Wei S, Xie Y. Ultrathin Nanosheets of Half-Metallic Monoclinic Vanadium Dioxide with a Thermally Induced Phase Transition. Angew Chem Int Ed Engl 2013; 52:7554-8. [DOI: 10.1002/anie.201302891] [Citation(s) in RCA: 50] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2013] [Revised: 05/13/2013] [Indexed: 11/12/2022]
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