Perovskite light-emitting/detecting bifunctional fibres for wearable LiFi communication

Preferred Orientation and Phase Distribution of Quasi-2D Perovskite for Bifunctional Light-Emitting Photodetectors

In traditional optical wireless communication (OWC) systems, the simultaneous use of multiple sets of light-emitting diodes (LEDs) and photodetectors (PDs) increases the system complexity and instability. Here we report bifunctional light-emitting photodetectors (LEPDs) fabricated with quasi-2D perovskite (F-PEA)2Cs4Pb5I11Br5 as light-emitting/detecting layers for efficient, miniaturized, and intelligent bidirectional OWC. By simply changing the solvent composition of the precursor solution and using antisolvent engineering, we manipulated the crystal orientation and phase distribution of (F-PEA)2Cs4Pb5I11Br5, realizing high irradiance (4.36 μW cm-2) and a -3 dB refresh rate (0.21 MHz) of electroluminescence in LED mode as well as low noise (below 1 pA Hz-1/2) and high responsivity (0.1 A W-1) in PD mode. The rapid and accurate OWC process was demonstrated through interaction of LEPDs. We also demonstrated the high-fidelity compression and digitization of high-resolution (256 × 256 pixels) color images using the four-step phase shift method to realize intelligent encrypted image OWC.

Filter-Less Color-Selective Photodetector Derived from Integration of Parallel Perovskite Photoelectric Response Units

Color-selective photodetectors (PDs) play an indispensable role in spectral recognition, image sensing, and other fields. Nevertheless, complex filters and delicate optical paths in such devices significantly increase their complexity and size, which subsequently impede their integration in smart optoelectronic chips for universal applications. This work demonstrates the successful fabrication of filter-less color-selective perovskite PDs by integrating three perovskite units with different photoresponse on a single chip. The variation in photoresponse is attributed to different quantities of SnO2 nanoparticles, synthesized through controlled ultrasonic treatment on the surface of the electron transportation layer SnS2, which selectively absorb short-wavelength light, thus increasing the relative transmittance of long-wavelength light and enhancing the photoresponse of the units to long wavelengths. By integrating any two units and deriving the formula for the wavelength to the responsivity ratio, a wavelength sensor is developed which can accurately identify incident light in the range of 400-700 nm with a minimum error <3 nm. Furthermore, the device integrating three units with different photoresponse can identify red, green and blue in polychromatic light to achieve color imaging with a relative error <6%. This work provides valuable insights into wavelength identification and color imaging of perovskite PDs.

Structural design of light-emitting fibers and fabrics for wearable and smart devices

Flexible light-emitting fibers and fabrics serve to bridge human-machine interactions. The desire for practical applications and the commercialization of flexible light-emitting fibers has accelerated structural progress and improvements. This review focuses on the structural design of light-emitting fibers and fabrics, starting with a summary of design principles, emission mechanisms, and structural evolution of coaxial structured light-emitting fibers. Subsequently, we explore recent advances in the helical structure design strategies that boost the mechanical sensitivity of light-emitting fibers. Following that, we analyze continuous preparation processes and the development of large-area intelligent light-emitting fabrics based on interwoven structures. Examples based on stiff and rigid inorganic-based light-emitting diodes integrated into flexible systems are also presented. Finally, we discuss the current challenges and future opportunities for light-emitting applications in the field of wearable and smart devices.

Full-color fiber light-emitting diodes based on perovskite quantum wires

Fiber light-emitting diodes (Fi-LEDs), which can be used for wearable lighting and display devices, are one of the key components for fiber/textile electronics. However, there exist a number of impediments to overcome on device fabrication with fiber-like substrates, as well as on device encapsulations. Here, we uniformly grew all-inorganic perovskite quantum wire arrays by filling high-density alumina nanopores on the surface of Al fibers with a dip-coating process. With a two-step evaporation method to coat a surrounding transporting layer and semitransparent electrode, we successfully fabricated full-color Fi-LEDs with emission peaks at 625 nanometers (red), 512 nanometers (green), and 490 nanometers (sky-blue), respectively. Intriguingly, additional polydimethylsiloxane packaging helps instill the mechanical bendability, stretchability, and waterproof feature of Fi-LEDs. The plasticity of Al fiber also allows the one-dimensional architecture Fi-LED to be shaped and constructed for two-dimensional or even three-dimensional architectures, opening up a new vista for advanced lighting with unconventional formfactors.

Mass-produced and uniformly luminescent photochromic fibers toward future interactive wearable displays

Enabling flexible fibers with light-emitting capabilities has the potential to revolutionize the design of smart wearable interactive devices. A recent publication in Light Science & Application, an interdisciplinary team of scientists led by Prof. Yan-Qing Lu and Prof. Guangming Tao has realized a highly flexible, uniformly luminescent photochromic fiber based on a mass-produced thermal drawing method. It overcomes the shortcomings of existing commercial light-diffusing fibers, exhibiting outstanding one-dimensional linear illumination performance. The research team integrated controllable photochromic fibers into various wearable interaction interfaces, providing a novel approach and insights to enable human-computer interaction.

MAPbI3perovskite photodetectors for high-performance optical wireless communication

High-sensitivity and fast-response photodetectors (PDs) are vital part of optical wireless communication (OWC) system. In this work, we develop an organic-inorganic hybrid perovskite material (MAPbI3) based p-i-n structured PD. By optimizing the precursor solution concertation, the PD showed a high responsivity of 0.98 A W-1, a fast response timetrise/tfallof 12/12.5 μs, a specific detectivity of 2.62 × 1013Jones, and the f-3dBof 24 kHz under the 532 nm laser and -0.2 V bias voltage. Furthermore, we designed an OWC system based on the prepared PD. With the baud rate of 19200 bps, the system exhibits a bit error rate less than 10-6, and it can realize 9.63 m long-distance communication and quick transmission applications such as strings, texts, photos, and audios. Our work demonstrates the great application potential of perovskite PDs in the field of optical communication.

Engineering Sizable and Broad-Spectrum Antibacterial Fabrics through Hydrogen Bonding Interaction and Electrostatic Interaction

Long-lasting and highly efficient antibacterial fabrics play a key role in public health occurrences caused by bacterial and viral infections. However, the production of antibacterial fabrics with a large size, highly efficient, and broad-spectrum antibacterial performance remains a great challenge due to the complex processes. Herein, we demonstrate sizable and highly efficient antibacterial fabrics through hydrogen bonding interaction and electrostatic interaction between surface groups of ZnO nanoparticles and fabric fibers. The production process can be carried out at room temperature and achieve a production rate of 300 × 1 m2 within 1 h. Under both visible light and dark conditions, the bactericidal rate against Gram-positive (S. aureus), Gram-negative (E. coli), and multidrug-resistant (MRSA) bacteria can reach an impressive 99.99%. Furthermore, the fabricated ZnO nanoparticle-decorated antibacterial fabrics (ZnO@fabric) show high stability and long-lasting antibacterial performance, making them easy to develop into variable antibacterial blocks for protection suits.

Charge injection engineering at organic/inorganic heterointerfaces for high-efficiency and fast-response perovskite light-emitting diodes

The development of advanced perovskite emitters has considerably improved the performance of perovskite light-emitting diodes (LEDs). However, the further development of perovskite LEDs requires ideal device electrical properties, which strongly depend on its interfaces. In perovskite LEDs with conventional p-i-n structures, hole injection is generally less efficient than electron injection, causing charge imbalance. Furthermore, the popular hole injection structure of NiOx/poly(9-vinylcarbazole) suffers from several issues, such as weak interfacial adhesion, high interfacial trap density and mismatched energy levels. In this work, we insert a self-assembled monolayer of [2-(9H-carbazol-9-yl)ethyl]phosphonic acid between the NiOx and poly(9-vinylcarbazole) layers to overcome these challenges at the organic/inorganic heterointerfaces by establishing a robust interface, passivating interfacial trap states and aligning the energy levels. We successfully demonstrate blue (emission at 493 nm) and green (emission at 515 nm) devices with external quantum efficiencies of 14.5% and 26.0%, respectively. More importantly, the self-assembled monolayer also gives rise to devices with much faster response speeds by reducing interfacial capacitance and resistance. Our results pave the way for developing more efficient and brighter perovskite LEDs with quick response, widening their potential application scope.

Touchless Input/Output Interface for Device-to-Device Communication

Multiple quantum well (MQW) III-nitride diodes show selectable functionalities of light-emitting and light-detecting behaviors, enabling direct touchless device-to-device communication. Here, we propose and demonstrate a touchless input/output (I/O) interface using a single MQW III-nitride diode. By integrating an MQW III-nitride diode with a memory via a control circuit, optical signals are converted into electrical ones to be written into a memory, and consequently, electrical information is read out from the memory to be translated into optical signals for visible light communication (VLC). The MQW III-nitride diode can not only lead to a touchless ″writing″ action but also offer a ″reading″ process through light. Such touchless I/O interface would provide new forms of interactivity for device-to-device communication technologies.

LEGO-like Assembly of Fibrous Modules for Display Textiles

Due to their promising advantages over classical rigid devices, the development of display textiles has exciting potential for various fields, including sensor technology, healthcare, and communication. To realize display textiles, it is necessary to prepare light-emitting building blocks at the fiber level and then weave or knit them to form the desired textile structures. However, from a practical viewpoint, it is difficult to continuously weave functional fibers containing light-emitting devices using conventional textile technologies. To address this issue, we introduced fibrous modules that can be assembled like LEGO blocks to realize textile displays. A unique feature of this work is that the light-emitting pixels are generated through a simple contact between modular electrochemiluminescent (ECL) fibers. Each fiber is composed of a single metallic wire coated with a gel-type ECL electrolyte that is formed by using a simple dip-coating method in ambient air. The sticky nature of the gel electrolyte enables the construction of light-emitting pixels through the simple physical contact of two or more fiber modules without the need for external pressure or heating. The diversity of this technology offers in terms of fibrous module arrangements and assembly can provide various options for designing the geometries of light-emitting pixels. We have implemented this technique to demonstrate not only a 1 × 1 pixel but also 3 × 3 pixels with an irregular shape. These results demonstrate that the unique strategy for display devices developed in this work provides a feasible approach for various electronic and optical textile applications.

Recent progress in construction methods and applications of perovskite photodetector arrays

Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.

Improving the data rate for long distance visible light communication using h-BN/CdZnSeS@ZnSeS quantum dot composite

Quantum dots (QDs) are exploited in visible light communication (VLC) due to their unique optical properties. However, it is still a challenge to conquer heating generation and photobleaching under prolonged illumination. In this paper, we proposed to utilize hexagonal boron nitride (h-BN) nanoplates to improve the thermal stability and photo stability of QDs and long-distance VLC data rate. After heating to 373 K and cooling to the initial temperature, photoluminescence (PL) emission intensity recovers to 62% of the original intensity and after 33 hours of illumination, PL emission intensity still maintains 80% of the initial intensity, while that of the bare QDs is only 34% and 53%, respectively. The QDs/h-BN composites perform a maximum achievable data rate of 98 Mbit/s by applying on-off keying (OOK) modulation, while the bare QDs are only 78 Mbps. In the process of extending the transmission distance from 0.3 m to 5 m, the QDs/h-BN composites exhibit superior luminosity corresponding to higher transmission data rates than bare QDs. Particularly, when the transmission distance reaches 5 m, the QDs/h-BN composites still show a clear eye diagram at a transmission rate of 50 Mbps while the eye diagram of bare QDs is indistinguishable at 25 Mbps. During 50 hours of continuous illumination, the QDs/h-BN composites keep a relatively stable bit error rate (BER) at 80 Mbps while that of QDs continuously increase, and the -3 dB bandwidth of QDs/h-BN composites keep around10 MHz while the bare QDs decrease from 12.6 MHz to 8.5 MHz. After illumination, the QDs/h-BN composites still indicate a clear eye diagram at a data rate of 50 Mbps while that of pure QDs is indistinguishable. Our results provide a feasible solution for realizing an enhanced transmission performance of QDs in longer-distance VLC.

Multilevel Simultaneous Lighting-Imaging System

In a III-nitride multiple quantum well (MQW) diode biased with a forward voltage, electrons recombine with holes inside the MQW region to emit light; meanwhile, the MQW diode utilizes the photoelectric effect to sense light when higher-energy photons hit the device to displace electrons in the diode. Both the injected electrons and the liberated electrons are gathered inside the diode, thereby giving rise to a simultaneous emission-detection phenomenon. The 4 × 4 MQW diodes could translate optical signals into electrical ones for image construction in the wavelength range from 320 to 440 nm. This technology will change the role of MQW diode-based displays since it can simultaneously transmit and receive optical signals, which is of crucial importance to the accelerating trend of multifunctional, intelligent displays using MQW diode technology.

Multifunctional and Multicolor Perovskite-CdSe Quantum Dots Diodes for Pulse Oximetry

A conventional pulse oximeter system is composed of two light sources with different peak emission wavelengths and a photodetector. Integrating these three independent components into one single device will absolutely simplify the system design and create a miniaturized size of the product. Here, we demonstrate a bilayer perovskite-CdSe quantum dot (hereafter perovskite-QD) diode capable of voltage-tunable green/red emission and photodetection. The proposed diode also presents an intriguing feature of simultaneous light emission and detection, which is explored as regards the diode being used as a photoconductor when the positive bias is larger than the built-in voltage. The multifunctional and multicolor diode is further employed in a reflective pulse oximeter system, as either the multicolor light sources or the sensing unit in the system provide accepted and trustful results for heart rate and arterial blood oxygenation. Our work provides a possible avenue for the simplification of the pulse oximetry with a compact and miniaturized design in the future.

Haynes-Shockley experiment analogs in surface and optoelectronics: Tunable surface electric field extracting nearly all photocarriers

Photocarriers predominantly recombine at semiconductor surfaces and interfaces, assuming high bulk carrier lifetime. Consequently, understanding the extraction of photocarriers via surfaces is critical to optoelectronics. Here, we propose Haynes-Shockley experiment analogs to investigate photocarrier surface extraction. A Schottky junction is used to tune the silicon near-surface electric field strength that varies over several orders of magnitude and simultaneously observe variations in broadband photocarrier extraction. Schottky barrier height and surface potential are both modulated. Work function tunable indium tin oxide (ITO) is developed to precisely regulate the barrier height and collect photocarriers at 0 V bias, thus avoiding the photocurrent gain effect. All experiments demonstrate >98% broadband internal quantum efficiency. The experiments are further extended to wave interference photonic crystals and random pyramids, paving a way to estimate the photogeneration rate of diverse surface light-trapping topologies by collecting nearly all photocarriers. The insights reported here provide a systematic experimental basis to investigate interfacial effects on photocarrier spatial generation and collection.

Coexistence of light emission and detection in a III-nitride quantum well diode

The demand for on-chip multifunctional optoelectronic systems is increasing in today's Internet of Things era. III-nitride quantum well diodes (QWDs) can transmit and receive information through visible light and can be used as both light-emitting diodes (LEDs) and photodetectors (PDs). Spectral emission-detection overlap gives the III-nitride QWD an intriguing capability to detect and modulate light emitted by itself. In this paper, the coexistence of light emission and detection in a III-nitride QWD is experimentally demonstrated, and a wireless video communication system through light is established. When approximately biasing and illuminating at the same time, the III-nitride QWD can achieve light emission and detection simultaneously. This work provides a foundation for the development of multifunctional III-nitride QWDs and the realization of device-to-device data communication.

High-Efficiency Fast-Radiative Blue-Emitting Perovskite Nanoplatelets and Their Formation Mechanisms

High-efficiency blue perovskite emitters with fast fluorescence radiation are not only crucial to achieving high-quality displays but also highly desired for optical wireless communications and quantum information technologies. Here, we demonstrate the preparation of blue-emitting Eu³⁺-, Sb³⁺-, and Ba²⁺-induced CsPbBr₃ nanoplatelets with narrow spectral widths. Among them, Sb³⁺-doped CsPbBr₃ NPLs can reach a photoluminescence quantum yield of 95%, with a very short fluorescence lifetime of 1.48 ns and greatly reduced ligand dosage. Through nuclear magnetic resonance analysis and density functional theory calculations, we find that the dopant-ligand interaction and dopant-induced growth energy barrier decide the growth kinetics of doped nanoplatelets. These mechanisms offer a fresh route to controlling the dimension of nanoscale perovskite emitters and benefit the development of fast-radiative perovskite emitters.

Mechanically and operationally stable flexible inverted perovskite solar cells with 20.32% efficiency by a simple oligomer cross-linking method

Due to their great potential in wearable and portable electronics, flexible perovskite solar cells (FPSCs) have been extensively studied. The major challenges in the practical applications of FPSCs are efficiency, operational stability, and mechanical stability. Herein, we developed a facile approach by incorporating a cross-linking oligomer of trimethylolpropane ethoxylate triacrylate (TET) into perovskite films to simultaneously enhance the power conversion efficiency (PCE) and stability of FPSCs. A PCE of 20.32% was achieved, which are among the best results for the inverted FPSCs. Both mechanical and environmental stabilities were improved for the TET-incorporated FPSCs. In particular, the PCE retained approximately 87% of its initial value after 20,000 bending cycles at a radius of 4 mm. The inverted FPSCs retained 85% of the initial PCE after 500 h storage at 85 °C and 90% after 900 h continuous one-sun illumination. A joint experiment-theory analysis ascribed the underlying mechanism to the reduced defect densities, improved crystallinity, and stability of the perovskite absorbers on flexible substrates caused by TET incorporation.

High-Performance and Reliable White Organic Light-Emitting Fibers for Truly Wearable Textile Displays

Light-emitting fibers have been intensively developed for the realization of textile displays and various lighting applications, as promising free-form electronics with outstanding interconnectivity. These advances in the fiber displays have been made possible by the successful implementation of the core technologies of conventional displays, including high optoelectronic performance and essential elements, in the fiber form-factor. However, although white organic light-emitting diodes (WOLEDs), as a fundamental core technology of displays, are essential for realizing full-color displays and solid-state lighting, fiber-based WOLEDs are still challenging due to structural issues and the lack of approaches to implementing WOLEDs on fiber. Herein, the first fiber WOLED is reported, exhibiting high optoelectronic performance and a reliable color index, comparable to those of conventional planar WOLEDs. As key features, it is found that WOLEDs can be successfully introduced on a cylindrical fiber using a dip-coatable single white-emission layer based on simulation and optimization of the white spectra. Furthermore, to ensure durability from usage, the fiber WOLED is encapsulated by an Al2 O3 /elastomer bilayer, showing stable operation under repetitive bending and pressure, and in water. This pioneering work is believed to provide building blocks for realizing complete textile display technologies by complementing the lack of the core technology.

Flexible Quantum-Dot Color-Conversion Layer Based on Microfluidics for Full-Color Micro-LEDs

In this article, red and green perovskite quantum dots are incorporated into the pixels of a flexible color-conversion layer assembly using microfluidics. The flexible color-conversion layer is then integrated with a blue micro-LED to realize a full-color display with a pixel pitch of 200 μm. Perovskite quantum dots feature a high quantum yield, a tunable wavelength, and high stability. The flexible color-conversion layer using perovskite quantum dots shows good luminous and display performance under different bending conditions; is easy to manufacture, economical, and applicable; and has important potential applications in the development of flexible micro-displays.

Regulation of the luminescence mechanism of two-dimensional tin halide perovskites

Two-dimensional (2D) Sn-based perovskites are a kind of non-toxic environment-friendly luminescent material. However, the research on the luminescence mechanism of this type of perovskite is still very controversial, which greatly limits the further improvement and application of the luminescence performance. At present, the focus of controversy is defects and phonon scattering rates. In this work, we combine the organic cation control engineering with temperature-dependent transient absorption spectroscopy to systematically study the interband exciton relaxation pathways in layered A2SnI4 (A = PEA+, BA+, HA+, and OA+) structures. It is revealed that exciton-phonon scattering and exciton-defect scattering have different effects on exciton relaxation. Our study further confirms that the deformation potential scattering by charged defects, not by the non-polar optical phonons, dominates the excitons interband relaxation, which is largely different from the Pb-based perovskites. These results enhance the understanding of the origin of the non-radiative pathway in Sn-based perovskite materials.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Remarkable Black-Phase Robustness of CsPbI3 Nanocrystals Sealed in Solid SiO2 /AlOx Sub-Micron Particles

This work combines the high-temperature sintering method and atomic layer deposition (ALD) technique, and yields SiO₂ /AlO_x -sealed γ-CsPbI₃ nanocrystals (NCs). The black-phase CsPbI₃ NCs, scattered and encapsulated firmly in solid SiO₂ sub-micron particles, maintain in black phases against water soaking, ultraviolet irradiation, and heating, exhibiting remarkable phase stability. A new phase-transition route, from γ via β to α phase without transferring into δ phase, has been discovered upon temperature increasing. The phase stability is ascribed to the high pressure exerted by the rigid SiO₂ encapsulations, and its condensed amorphous structures that prevent the permeation of H₂ O molecules. Nanoscale coating of Al₂ O₃ thin films, which are deposited on the surface of the CsPbI₃ -SiO₂ by ALD, enhances the protection against O₂ infiltration, greatly elevating the high-temperature stability of CsPbI₃ NCs sealed inside, as the samples remain bright after 1-h annealing in air at 400 °C. These fabrication and encapsulation techniques effectively prevent the formation of δ-CsPbI₃ under harsh environment, bringing the high-pressure preservation of black-phase CsPbI₃ from laboratory to industry toward potential applications in both photovoltaic and fluorescent areas.

Perovskite White Light Emitting Diodes: Progress, Challenges, and Opportunities

As global warming, energy shortages, and environment pollution have intensified, low-carbon and energy-saving lighting technology has attracted great attention worldwide. Light emitting diodes (LEDs) have been around for decades and are considered to be the most ideal lighting technology currently due to their high luminescence efficiency (LE) and long lifespan. Besides, along with the development of modern technology, lighting technologies with higher performance and more functions are desired. Perovskite based LEDs (PeLEDs) have recently emerged as ideal candidates for lighting technology owing to the extraordinary photoelectric properties of perovskite, such as high photoluminescence quantum yields (PLQYs), easy wavelength tuning, and low-cost synthesis. Herein, we open this review by introducing the background of white LEDs (WLEDs), including their light-emitting mechanism, typical characteristics, and key indicators in applications. Then, four main approaches to fabricate WLEDs are discussed and compared. After that, in accordance with the four categories, we focus on the recent progress of white PeLEDs (Pe-WLEDs), followed by the challenges and opportunities for Pe-WLEDs in practical application. Meanwhile, some pertinent countermeasures to their challenges are put forward. Finally, the development promise of Pe-WLEDs is explored.

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO microwire via Ga-incorproration (ZnO:Ga MW) was employed to prepare a light-emitting/detecting bifunctional heterojunction structure, combined with p-type Si crystal wafer as a hole transporting layer. In a forward-bias regime, red luminescence peaking at around 680 nm was captured. While, the fabricated heterojunction device also exhibited an obvious photoresponse in the ultraviolet wavelengths. Interestingly, the introduction of Ag nanowires (AgNWs) are utilized to increase light output with amplitude 4 times higher than with that of naked wire-based LEDs. Similarly, the performance parameters of the fabricated n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector are significantly enhanced, containing a responsivity of 5.52 A W^-1, detectivity of 2.34 × 10¹² Jones, external quantum efficiency of 1.9 × 10³% illuminated under 370 nm at -1 V. We compare this work with previous reported photodetectors based on various ZnO/Si-based materials and structures, some performance parameters are not superior, but our constructed n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector has comparable overall characteristics, and our findings stand out especially for providing an inexpensive and suitable pathway for developing low-cost, miniaturized and integrated ultraviolet photodetectors. The demonstration of AgNWs enhanced low-dimensional light-emitting/detecting bifunctional photodiodes can offer a promising scheme to construct high-performance Si-based optoelectronic devices.

Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices

Multiferroics are being studied increasingly in applications of photovoltaic devices for the carrier separation driven by polarization and magnetization. In this work, textured black silicon photovoltaic devices are fabricated with Bi6Fe1.6Co0.2Ni0.2Ti3O18/Bi2FeCrO6 (BFCNT/BFCO) multiferroic heterojunction as an absorber and graphene as an anode. The structural and optical analyses showed that the bandgap of Aurivillius-typed BFCNT and double perovskite BFCO are 1.62 ± 0.04 eV and 1.74 ± 0.04 eV respectively, meeting the requirements for the active layer in solar cells. Under the simulated AM 1.5 G illumination, the black silicon photovoltaic devices delivered a photoconversion efficiency (η) of 3.9% with open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.75 V, 10.8 mA cm-2, and 48.3%, respectively. Analyses of modulation of an applied electric and magnetic field on the photovoltaic properties revealed that both polarization and magnetization of multiferroics play an important role in tuning the built-in electric field and the transport mechanisms of charge carriers, thus providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.

Self-powered ultraviolet photodetector based on an n-ZnO:Ga microwire/p-Si heterojunction with the performance enhanced by a pyro-phototronic effect

In the present study, a heterojunction made of an individual ZnO microwire via Ga incorporation (ZnO:Ga MW) with a p-Si substrate was constructed to develop a self-powered ultraviolet photodetector. When operated under an illumination of 370 nm light with a power density of ∼ 0.5 mW/cm², the device exhibited an excellent responsivity of 0.185 A/W, a large detectivity of 1.75×10¹² Jones, and excellent stability and repeatability. The device also exhibited a high on/off photocurrent ratio up to 10³, and a short rising and falling time of 499/412 μs. By integrating the pyro-phototronic effect, the maximum responsivity and detectivity increased significantly to 0.25 A/W and 2.30×10¹² Jones, respectively. The response/recovery time was drastically reduced to 79/132 μs without an external power source. In addition, the effects of light wavelength, power density, and bias voltage on the photocurrent response mediated by the pyro-phototronic effect were systematically characterized and discussed. Our work not only provides an easy yet efficient procedure for constructing a self-powered ultraviolet photodetector but also broadens the application prospects for developing individual wire optoelectronic devices based on the photovoltaic-pyro-phototronic effect.

Fiber‐Shaped Electronic Devices

Textile electronics embedded in clothing represent an exciting new frontier for modern healthcare and communication systems. Fundamental to the development of these textile electronics is the development of the fibers forming the cloths into electronic devices. An electronic fiber must undergo diverse scrutiny for its selection for a multifunctional textile, viz., from the material selection to the device architecture, from the wearability to mechanical stresses, and from the environmental compatibility to the end‐use management. Herein, the performance requirements of fiber‐shaped electronics are reviewed considering the characteristics of single electronic fibers and their assemblies in smart clothing. Broadly, this article includes i) processing strategies of electronic fibers with required properties from precursor to material, ii) the state‐of‐art of current fiber‐shaped electronics emphasizing light‐emitting devices, solar cells, sensors, nanogenerators, supercapacitors storage, and chromatic devices, iii) mechanisms involved in the operation of the above devices, iv) limitations of the current materials and device manufacturing techniques to achieve the target performance, and v) the knowledge gap that must be minimized prior to their deployment. Lessons learned from this review with regard to the challenges and prospects for developing fiber‐shaped electronic components are presented as directions for future research on wearable electronics.

Highly Deformable High-Performance Paper-Based Perovskite Photodetector with Improved Stability

Paper-based photodetectors have attracted extensive research interest owing to their environmentally friendly and highly deformable properties. Although perovskite crystals with outstanding optoelectronic properties have proved to be one of the most promising candidates for photodetectors, the development of paper-based photodetectors is hindered by the moisture absorptivity of paper and the instability of perovskite crystals in a humid atmosphere. In this study, we demonstrate a highly deformable and high-performance paper-based perovskite photodetector. The photodetector maintains its excellent performance even after exposure to a relative humidity of 60% for 120 h.

Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications

In this work, we present the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array comprising 1 × 10 device units operating in the short-wavelength infrared (SWIR) spectrum region. The as-fabricated heterostructures show an obvious photovoltaic effect, providing the devices with the ability to work as self-driven photodetectors. Upon 1550 nm illumination, a typical photodetector exhibits prominent photoresponse performance with the current on/off ratio, responsivity, external quantum efficiency and specific detectivity reaching 1.08 × 103, 766 mA W-1, 61.3% and 1.1 × 1011 Jones, respectively. The device also has a fast response speed with rise/fall times of 54.9 μs/56.6 μs. Thanks to the respectable homogeneity in device performance, the photodetector array can reliably record an image of a "diode symbol" produced by SWIR irradiation. What is more, the photodetector is successfully integrated into a SWIR optical communication system serving as an optical receiver to transmit a text signal. The above results imply a huge possibility of the present heterostructure-based photodetector array for some optoelectronic purposes such as SWIR image sensing and optical communication applications.

Enhanced Weak-Light Detection of Perovskite Photodetectors through Perovskite/Hole-Transport Material Interface Treatment

Enhancement in weak-light detection and other photodetection properties was observed for organic-inorganic halide perovskite photodetectors as a result of benzylammonium iodide (BzAI) treatment at the methylammonium lead triiodide (MAPbI₃) and hole-transport layer (HTL) interface. After treatment, growth of the two-dimensional Ruddlesden-Popper perovskite phase was observed at the MAPbI₃ surface, which shifted the overall surface work function upwards and thus effectively facilitated charge transfer across the MAPbI₃/HTL interface. As a result, the fully fabricated device with 10 mg/mL (BzAI/isopropanol) treatment exhibited shorter rise time (t_rise) and decay time (t_decay) of 53 and 38 μs, respectively, compared to t_rise and t_decay of 214 and 120 μs, respectively, for the pristine MAPbI₃ sample. In addition, the BzAI-treated device exhibited larger linearity compared to the pristine MAPbI₃ sample, demonstrating a high and stable specific detectivity of 1.49 × 10¹³ to 2.14 × 10¹³ Jones under incident light intensity of 10^-3 to 10⁰ mW/cm², respectively.