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Ribeiro G, Ferreira G, Menda UD, Alexandre M, Brites MJ, Barreiros MA, Jana S, Águas H, Martins R, Fernandes PA, Salomé P, Mendes MJ. Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2447. [PMID: 37686955 PMCID: PMC10489900 DOI: 10.3390/nano13172447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 08/20/2023] [Accepted: 08/27/2023] [Indexed: 09/10/2023]
Abstract
By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.
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Affiliation(s)
- G. Ribeiro
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
- INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal; (P.A.F.); (P.S.)
| | - G. Ferreira
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
| | - U. D. Menda
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
| | - M. Alexandre
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
| | - M. J. Brites
- LNEG, Estrada do Paço do Lumiar, 22, 1649-038 Lisboa, Portugal; (M.J.B.)
| | - M. A. Barreiros
- LNEG, Estrada do Paço do Lumiar, 22, 1649-038 Lisboa, Portugal; (M.J.B.)
| | - S. Jana
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
| | - H. Águas
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
| | - R. Martins
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
| | - P. A. Fernandes
- INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal; (P.A.F.); (P.S.)
- CIETI, Departamento de Física, Instituto Superior de Engenharia do Porto, Instituto Politécnico do Porto, 4249-015 Porto, Portugal
- Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
| | - P. Salomé
- INL, International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal; (P.A.F.); (P.S.)
- i3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
| | - M. J. Mendes
- i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal (M.A.); (S.J.); (H.Á.)
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Li SX, Xia H, Liu TY, Zhu H, Feng JC, An Y, Zhang XL, Sun HB. In Situ Encapsulated Moiré Perovskite for Stable Photodetectors with Ultrahigh Polarization Sensitivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207771. [PMID: 36341484 DOI: 10.1002/adma.202207771] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/23/2022] [Indexed: 06/16/2023]
Abstract
Nanostructures provide a simple, effective, and low-cost route to enhance the light-trapping capability of optoelectronic devices. In recent years, nano-optical structures have been widely used in perovskite optoelectronic devices to greatly enhance the device performance. However, the inherent instability of perovskite materials hinders the practical application of these nanostructured optoelectronic devices. Here, in situ encapsulated moiré lattice perovskite photodetectors (PDs) by two nanograting-structured soft templates with relative rotation angles is fabricated. The confinement growth of the two nanograting templates leads to crystal growth with moiré lattice structure, which improves the light-harvesting ability of the perovskite crystal, thereby improving the device performance. The PD exhibits responsivity to 1026.5 A W-1 . The Moiré lattice-perovskite-based PD maintained 95% of the initial performance after 223 days. After being continuously sprayed with water moist for 180 min, the performance is maintained at 95.7% of its initial level. The nanograting structure endows the device with high polarization sensitivity of Imax /Imin as high as 9.1.
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Affiliation(s)
- Shun-Xin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Hong Xia
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Tian-Yu Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - He Zhu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Jia-Cheng Feng
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Yang An
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Xu-Lin Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Hong-Bo Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
- State Key Laboratory of Precision Measurement Technology & Instruments, Department of Precision Instrument, Tsinghua University, Haidian district, Beijing, 100084, China
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Centeno P, Alexandre M, Neves F, Fortunato E, Martins R, Águas H, Mendes MJ. Copper-Arsenic-Sulfide Thin-Films from Local Raw Materials Deposited via RF Co-Sputtering for Photovoltaics. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3268. [PMID: 36234397 PMCID: PMC9565231 DOI: 10.3390/nano12193268] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 09/13/2022] [Accepted: 09/15/2022] [Indexed: 06/16/2023]
Abstract
The inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu31S16), with the increasing proximity to the Cu target. Resistivity values from 4.7 mΩ·cm to 17.4 Ω·cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.
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Affiliation(s)
- Pedro Centeno
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Miguel Alexandre
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Filipe Neves
- LNEG, Laboratório Nacional de Energia e Geologia, Estrada do Paço do Lumiar 22, 1649-038 Lisboa, Portugal
| | - Elvira Fortunato
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Rodrigo Martins
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Hugo Águas
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Manuel J. Mendes
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
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Pradhan S. Multi-bandgap colloidal quantum dot mixing for optoelectronic devices. NEW J CHEM 2022. [DOI: 10.1039/d2nj01987f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This article discusses the current status and future prospects of multi-bandgap colloidal quantum dot-based optoelectronic devices.
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Affiliation(s)
- Santanu Pradhan
- Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, India
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