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Sharma DK, Agreda A, Dell'Ova F, Malchow K, Colas des Francs G, Dujardin E, Bouhelier A. Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires. ACS NANO 2024; 18:15905-15914. [PMID: 38829860 DOI: 10.1021/acsnano.4c03276] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from a nonequilibrium heated electron distribution generated at the surface of metallic nanostructures by ultrafast pulsed laser illumination. N-PL is sensitive to surface morphology, local electromagnetic field strength, and electronic band structure, making it relevant to probe optically excited nanoscale plasmonic systems. It also has been key to accessing the complex multiscale time dynamics ruling electron thermalization. Here, we show that plasmon-mediated N-PL emitted by a gold nanowire can be modified by an electrical architecture featuring a nanogap. Upon voltage activation, we observe that N-PL becomes dependent on the electrical transport dynamics and can thus be locally modulated. This finding brings an electrical leverage to externally control the photoluminescence generated from metal nanostructures and constitutes an asset for the development of emerging nanoscale interface devices managing photons and electrons.
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Affiliation(s)
- Deepak K Sharma
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Adrian Agreda
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Florian Dell'Ova
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Konstantin Malchow
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Gérard Colas des Francs
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Erik Dujardin
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Alexandre Bouhelier
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
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Tang J, Guo Q, Wu Y, Ge J, Zhang S, Xu H. Light-Emitting Plasmonic Tunneling Junctions: Current Status and Perspectives. ACS NANO 2024; 18:2541-2551. [PMID: 38227821 DOI: 10.1021/acsnano.3c08628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.
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Affiliation(s)
- Jibo Tang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Quanbing Guo
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Yu Wu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Junhao Ge
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Shunping Zhang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Hongxing Xu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
- School of Microelectronics, Wuhan University, Wuhan 430072, China
- Henan Academy of Sciences, Zhengzhou, Henan 450046 China
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Doderer M, Keller K, Winiger J, Baumann M, Messner A, Moor D, Chelladurai D, Fedoryshyn Y, Leuthold J, Strait J, Agrawal A, Lezec HJ, Haffner C. Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics. NANO LETTERS 2024; 24:859-865. [PMID: 38051536 PMCID: PMC10811661 DOI: 10.1021/acs.nanolett.3c03684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 11/27/2023] [Accepted: 11/27/2023] [Indexed: 12/07/2023]
Abstract
Broadband near-infrared light emitting tunnel junctions are demonstrated with efficient coupling to a silicon photonic waveguide. The metal oxide semiconductor devices show long hybrid photonic-plasmonic mode propagation lengths of approximately 10 μm and thus can be integrated into an overcoupled resonant cavity with quality factor Q ≈ 49, allowing for tens of picowatt near-infrared light emission coupled directly into a waveguide. The electron inelastic tunneling transition rate and the cavity mode density are modeled, and the transverse magnetic (TM) hybrid mode excitation rate is derived. The results coincide well with polarization resolved experiments. Additionally, current-stressed devices are shown to emit unpolarized light due to radiative recombination inside the silicon electrode.
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Affiliation(s)
- Michael Doderer
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Killian Keller
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Joel Winiger
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Michael Baumann
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Andreas Messner
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - David Moor
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Daniel Chelladurai
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Yuriy Fedoryshyn
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Juerg Leuthold
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Jared Strait
- Physical
Measurement Laboratory, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Amit Agrawal
- Physical
Measurement Laboratory, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Henri J. Lezec
- Physical
Measurement Laboratory, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Christian Haffner
- Interuniversity
Microelectronics Centre (imec), Remisebosweg 1, 3001 Leuven, Belgium
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