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Zeng H, He ZQ, Fan YR, Luo Y, Lyu C, Wu JP, Li YB, Liu S, Wang D, Zhang DC, Zeng JJ, Deng GW, Wang Y, Song HZ, Wang Z, You LX, Guo K, Sun CZ, Luo Y, Guo GC, Zhou Q. Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source. PHYSICAL REVIEW LETTERS 2024; 132:133603. [PMID: 38613308 DOI: 10.1103/physrevlett.132.133603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 12/12/2023] [Accepted: 01/29/2024] [Indexed: 04/14/2024]
Abstract
An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.
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Affiliation(s)
- Hong Zeng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhao-Qin He
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Yun-Ru Fan
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yue Luo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Chen Lyu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jin-Peng Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yun-Bo Li
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - Sheng Liu
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - Dong Wang
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - De-Chao Zhang
- Department of Fundamental Network Technology, China Mobile Research Institute, Beijing 100053, China
| | - Juan-Juan Zeng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Center for Quantum Internet, Tianfu Jiangxi Laboratory, Chengdu 641419, China
| | - Guang-Wei Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - You Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Hai-Zhi Song
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Southwest Institute of Technical Physics, Chengdu 610041, China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Li-Xing You
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Kai Guo
- Institute of Systems Engineering, AMS, Beijing 100141, China
| | - Chang-Zheng Sun
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Yi Luo
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Guang-Can Guo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
- Center for Quantum Internet, Tianfu Jiangxi Laboratory, Chengdu 641419, China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Zhou
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
- Center for Quantum Internet, Tianfu Jiangxi Laboratory, Chengdu 641419, China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
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Wu Y, Zhou P, Xiao Y, Sun K, Wang D, Wang P, Mi Z. Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity. Proc Natl Acad Sci U S A 2023; 120:e2303473120. [PMID: 37874860 PMCID: PMC10622873 DOI: 10.1073/pnas.2303473120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2023] [Accepted: 09/19/2023] [Indexed: 10/26/2023] Open
Abstract
Interface engineering in heterostructures at the atomic scale has been a central research focus of nanoscale and quantum material science. Despite its paramount importance, the achievement of atomically ordered heterointerfaces has been severely limited by the strong diffusive feature of interfacial atoms in heterostructures. In this work, we first report a strong dependence of interfacial diffusion on the surface polarity. Near-perfect quantum interfaces can be readily synthesized on the semipolar plane instead of the conventional c-plane of GaN/AlN heterostructures. The chemical bonding configurations on the semipolar plane can significantly suppress the cation substitution process as evidenced by first-principles calculations, which leads to an atomically sharp interface. Moreover, the surface polarity of GaN/AlN can be readily controlled by varying the strain relaxation process in core-shell nanostructures. The obtained extremely confined, interdiffusion-free ultrathin GaN quantum wells exhibit a high internal quantum efficiency of ~75%. Deep ultraviolet light-emitting diodes are fabricated utilizing a scalable and robust method and the electroluminescence emission is nearly free of the quantum-confined Stark effect, which is significant for ultrastable device operation. The presented work shows a vital path for achieving atomically ordered quantum heterostructures for III-nitrides as well as other polar materials such as III-arsenides, perovskites, etc.
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Affiliation(s)
- Yuanpeng Wu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI48109
| | - Peng Zhou
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI48109
| | - Yixin Xiao
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI48109
| | - Kai Sun
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI48109
| | - Ding Wang
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI48109
| | - Ping Wang
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI48109
| | - Zetian Mi
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI48109
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Ben-Asher A, Fernández-Domínguez AI, Feist J. Non-Hermitian Anharmonicity Induces Single-Photon Emission. PHYSICAL REVIEW LETTERS 2023; 130:243601. [PMID: 37390444 DOI: 10.1103/physrevlett.130.243601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Accepted: 05/22/2023] [Indexed: 07/02/2023]
Abstract
Single-photon sources are in high demand for quantum information applications. A paradigmatic way to achieve single-photon emission is through anharmonicity in the energy levels, such that the absorption of a single photon from a coherent drive shifts the system out of resonance and prevents absorption of a second one. We identify a novel mechanism for single-photon emission through non-Hermitian anharmonicity, i.e., anharmonicity in the losses instead of in the energy levels. We demonstrate the mechanism in two types of systems, including a feasible setup consisting of a hybrid metallodielectric cavity weakly coupled to a two-level emitter, and show that it induces high-purity single-photon emission at high repetition rates.
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Affiliation(s)
- Anael Ben-Asher
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E28049 Madrid, Spain
| | - Antonio I Fernández-Domínguez
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E28049 Madrid, Spain
| | - Johannes Feist
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E28049 Madrid, Spain
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Zhu X, Pan Z, Xu T, Shao X, Gao Z, Xie Q, Ying Y, Pei W, Lin H, Wang J, Tang X, Chen W, Liu Y. Capping Ligand Engineering Enables Stable CsPbBr 3 Perovskite Quantum Dots toward White-Light-Emitting Diodes. Inorg Chem 2023. [PMID: 37229601 DOI: 10.1021/acs.inorgchem.3c01092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
All-inorganic perovskite quantum dots (PeQDs) have sparked extensive research focus on white-light-emitting diodes (WLEDs), but stability and photoluminescence efficiency issues are still remain obstacles impeding their practical application. Here, we reported a facile one-step method to synthesize CsPbBr3 PeQDs at room temperature using branched didodecyldimethylammonium fluoride (DDAF) and short-chain-length octanoic acid as capping ligands. The obtained CsPbBr3 PeQDs have a near-unity photoluminescence quantum yield of 97% due to the effective passivation of DDAF. More importantly, they exhibit much improved stability against air, heat, and polar solvents, maintaining >70% of initial PL intensity. Making use of these excellent optoelectronic properties, WLEDs based on CsPbBr3 PeQDs, CsPbBr1.2I1.8 PeQDs, and blue LEDs were fabricated, which show a color gamut of 122.7% of the National Television System Committee standard, a luminous efficacy of 17.1 lm/W, with a color temperature of 5890 K, and CIE coordinates of (0.32, 0.35). These results indicate that the CsPbBr3 PeQDs have great practical potential in wide-color-gamut displays.
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Affiliation(s)
- Xiaolin Zhu
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Zhangcheng Pan
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Tianyue Xu
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Xiuwen Shao
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Zhaoju Gao
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Qingyu Xie
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Yupeng Ying
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Wei Pei
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
| | - Hao Lin
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, P. R. China
| | - Jia Wang
- Department of Physics, Umeå University, Umeå SE-90187, Sweden
| | - Xiaosheng Tang
- College of Optoelectronic Engineering, Chongqing University of Post and Telecommunications, Chongqing 400065, People's Republic of China
| | - Weiwei Chen
- College of Optoelectronic Engineering, Chongqing University of Post and Telecommunications, Chongqing 400065, People's Republic of China
| | - Yongfeng Liu
- College of Physical Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, P. R. China
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Kutovyi Y, Jansen MM, Qiao S, Falter C, von den Driesch N, Brazda T, Demarina N, Trellenkamp S, Bennemann B, Grützmacher D, Pawlis A. Efficient Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars with Growth Controlled Emission Energy. ACS NANO 2022; 16:14582-14589. [PMID: 36095839 DOI: 10.1021/acsnano.2c05045] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening, which make them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology, we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.
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Affiliation(s)
- Yurii Kutovyi
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
| | - Marvin Marco Jansen
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
| | - Siqi Qiao
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
| | - Christine Falter
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
| | - Nils von den Driesch
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
| | - Thorsten Brazda
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
| | - Nataliya Demarina
- Peter Grünberg Institute (PGI-2), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Stefan Trellenkamp
- Helmholtz Nano Facility (HNF), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Benjamin Bennemann
- Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Detlev Grützmacher
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Alexander Pawlis
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52074 Aachen, Germany
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Jiang M, Liu X, Liu M, Zhu R, Li B, Wan P, Shi D, Kan C. Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction. CrystEngComm 2022. [DOI: 10.1039/d2ce00917j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Heterostructure manufacturing has been extensively studied as indispensable footstones in the progressive semiconductor optoelectronic devices due to their constituent materials, interfacial states and electronic transport capabilities, thus enabling competitive candidates...
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