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Choi M, Jung WH, Lee J, Bae Y, Lee K, Oh J, Lim J, Rhee S, Roh J. Utilizing a compact diamino-based ligand as a charge balancer in quantum dot light-emitting diodes. NANOSCALE ADVANCES 2024; 6:4369-4375. [PMID: 39170966 PMCID: PMC11334974 DOI: 10.1039/d4na00348a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2024] [Accepted: 06/15/2024] [Indexed: 08/23/2024]
Abstract
Charge imbalance within the emissive layer (EML) has been identified as a major obstacle to achieving high-performance quantum dot light-emitting diodes (QD-LEDs). To address this issue, we propose the use of a compact diamino-based ligand as a universal approach to improve the charge balance within the QD EML. Specifically, we treat QDs symmetrically with 1,4-diaminobutane (DAB) on both the bottom and top sides. This treatment simultaneously modulates the injection properties of electrons and holes, effectively suppressing electron injection into QDs while facilitating hole injection. As a result, QD-LEDs with symmetrical DAB treatment exhibit a 1.5-fold increase in external quantum efficiency and a remarkable 4.5-fold increase in device lifetime. These results highlight the role of the compact diamine-based ligands as highly efficient charge balancers to realize high-performance and highly stable QD-LEDs.
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Affiliation(s)
- Minseok Choi
- Dept. of Electrical Engineering, Pusan National University Busan 46241 Republic of Korea
| | - Woon Ho Jung
- Dept. of Energy Science and Center for Artificial Atoms, Sungkyunkwan University Suwon Gyeonggi-do 16419 Republic of Korea
| | - Jaeyeop Lee
- Dept. of Electrical Engineering, Pusan National University Busan 46241 Republic of Korea
| | - Yeyun Bae
- Dept. of Electrical Engineering, Pusan National University Busan 46241 Republic of Korea
| | - Kyoungeun Lee
- Dept. of Electrical Engineering, Pusan National University Busan 46241 Republic of Korea
| | - Jiyoon Oh
- Dept. of Electrical Engineering, Pusan National University Busan 46241 Republic of Korea
| | - Jaehoon Lim
- Dept. of Energy Science and Center for Artificial Atoms, Sungkyunkwan University Suwon Gyeonggi-do 16419 Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University Suwon Gyeonggi-do 16419 Republic of Korea
- Department of Future Energy Engineering (DFEE), Sungkyunkwan University Suwon Gyeonggi-do 16419 Republic of Korea
| | - Seunghyun Rhee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT) Daejeon 34114 Republic of Korea
| | - Jeongkyun Roh
- Dept. of Electrical Engineering, Pusan National University Busan 46241 Republic of Korea
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2
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Kim DH, Hwang JH, Seo E, Lee K, Lim J, Lee D. Solution-Processed Thick Hole-Transport Layer for Reliable Quantum-Dot Light-Emitting Diodes Based on an Alternatingly Doped Structure. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39087844 DOI: 10.1021/acsami.4c07049] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
The operating lifetime of quantum-dot light-emitting diodes (QLED) is a bottleneck for commercial display applications. To enhance the operational stability of QLEDs, we developed a robust solution-processed highly conductive hole-transport-layer (HTL) structure, which enables a thick HTL structure to mitigate the electric field. An alternating doping strategy, which involves multiple alternating stacks of N4,N4'-di(naphthalen-1-yl)-N4,N4'-bis(4-vinylphenyl)biphenyl-4,4'-diamine and phosphomolybdic acid layers, could provide significantly improved conductivity; more specifically, the 90 nm-thick alternatingly doped HTL exhibited higher conductivity than the 45 nm-thick undoped HTL. Therefore, when applied to a QLED, the increase in the thickness of the alternatingly doped HTL increased device reliability. As a result, the lifetime of the QLED with a thick, alternatingly doped HTL was 48-fold higher than that of the QLED with a thin undoped HTL. This alternating doping strategy provides a new paradigm for increasing the stability of solution-based optoelectronic devices in addition to QLEDs.
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Affiliation(s)
- Dong Hyun Kim
- Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinju-daero, Jinju, Gyeongnam 52828, Republic of Korea
| | - Jeong Ha Hwang
- Department of Energy Science, Centre for Artificial Atoms, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea
| | - Eunyong Seo
- Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinju-daero, Jinju, Gyeongnam 52828, Republic of Korea
| | - Kyungjae Lee
- Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinju-daero, Jinju, Gyeongnam 52828, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science, Centre for Artificial Atoms, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea
| | - Donggu Lee
- Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinju-daero, Jinju, Gyeongnam 52828, Republic of Korea
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Saha A, Yadav R, Rivaux C, Aldakov D, Reiss P. Water-Soluble Alumina-Coated Indium Phosphide Core-Shell Quantum Dots with Efficient Deep-Red Emission Beyond 700 nm. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404426. [PMID: 39058212 DOI: 10.1002/smll.202404426] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Revised: 07/08/2024] [Indexed: 07/28/2024]
Abstract
Solution-processed colloidal III-V semiconductor-based quantum dots (QDs) represent promising and environmentally-friendly alternatives to Cd-based QDs in the realms of optoelectronics and biological applications. While InP-based core-shell QDs have demonstrated efficient light-emitting diode (LED) performance in the visible region, achieving deep-red emission (above 700 nm) with a narrow linewidth has proven challenging. Herein, the study presents a novel strategy for synthesizing InP/ZnSe/ZnS core-shell-shell QDs tailored for emission in the first biological transparency window. The resulting QDs exhibit an emission wavelength up to 725 nm with a narrow peak full width at half maximum (FWHM) down to 107 meV (45 nm). To enhance the biocompatibility and chemical stability of the QDs, their surface is further capped with a layer of amorphous alumina resulting in an InP/ZnSe/ZnS/Al2O3 heterostructure. This surface passivation not only ensures environmental- and photostability but also enhances the photoluminescence quantum yield (PLQY). The alumina capping enables the aqueous phase transfer via surface ligand exchange using mercaptopropionic acid (MPA) while maintaining the initial quantum yield. The resulting QDs demonstrate a significant potential for advancing next-generation optoelectronic technologies and bio-applications.
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Affiliation(s)
- Avijit Saha
- University Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, STEP, Grenoble, 38000, France
| | - Ranjana Yadav
- University Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, STEP, Grenoble, 38000, France
| | - Céline Rivaux
- University Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, STEP, Grenoble, 38000, France
| | - Dmitry Aldakov
- University Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, STEP, Grenoble, 38000, France
| | - Peter Reiss
- University Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, STEP, Grenoble, 38000, France
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Lee J, Jo H, Choi M, Park S, Oh J, Lee K, Bae Y, Rhee S, Roh J. Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches. SMALL METHODS 2024; 8:e2301224. [PMID: 38193264 DOI: 10.1002/smtd.202301224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/25/2023] [Indexed: 01/10/2024]
Abstract
Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.
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Affiliation(s)
- Jaeyeop Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Hyeona Jo
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Minseok Choi
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Sangwook Park
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Jiyoon Oh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kyoungeun Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Yeyun Bae
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Seunghyun Rhee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
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5
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Yoo D, Choi MJ. Asymmetric Metal-Carboxylate Complexes for Synthesis of InGaP Alloyed Quantum Dots with Blue Emission. ACS NANO 2024; 18:16051-16058. [PMID: 38840340 DOI: 10.1021/acsnano.4c05643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Indium phosphide (InP) quantum dots (QDs) have attracted significant interest as next-generation light-emitting materials. However, the synthesis of blue-emitting InP-based QDs has lagged behind that of established green- and red-emitting InP QDs. Herein, we present a strategy to synthesize blue-emitting QDs by forming an InGaP alloy composition. The introduction of asymmetric In-carboxylate and Ga-carboxylate complexes resulted in a balanced synthetic reactivity between In-P and Ga-P, leading to the formation of InGaP alloyed QDs. The resultant In1-xGaxP alloyed QDs exhibited a broad range of photoluminescence (PL) tunability, spanning from 535 nm (InP) to 465 nm (In0.62Ga0.38P), depending on the In/Ga ratio used in the synthesis. In contrast, synthesis with symmetric In-carboxylate and Ga-carboxylate complexes produced a core/shell structure of InP/GaP QDs, which did not exhibit a blue shift of the PL peak with Ga addition. By employing a core/shell structure of In0.62Ga0.38P/ZnS QDs, we achieved a PL quantum yield of 42% at 475 nm. This work highlights the material-processing strategy essential for forming alloyed structures in III-V ternary systems.
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Affiliation(s)
- Doheon Yoo
- Department of Chemical and Biochemical Engineering, Dongguk University, Pildong-ro 1-gil, Jung-gu, Seoul 04620, Republic of Korea
| | - Min-Jae Choi
- Department of Chemical and Biochemical Engineering, Dongguk University, Pildong-ro 1-gil, Jung-gu, Seoul 04620, Republic of Korea
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Fan J, Han C, Yang G, Song B, Xu R, Xiang C, Zhang T, Qian L. Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312948. [PMID: 38813832 DOI: 10.1002/adma.202312948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 04/05/2024] [Indexed: 05/31/2024]
Abstract
Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.
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Affiliation(s)
- Junpeng Fan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Changfeng Han
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Guojian Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Bin Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Rui Xu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, Ningbo, 315100, P. R. China
| | - Chaoyu Xiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Ting Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Lei Qian
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
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Guo J, Xie M, Li H, Zhang L, Zhang L, Zhang X, Zheng W, Tian J. High Efficiency and Low Roll-Off Pure-Red Perovskite LED Enabled by Simultaneously Inhibiting Auger and Trap Recombination of Quantum Dots. NANO LETTERS 2024; 24:6410-6416. [PMID: 38767286 DOI: 10.1021/acs.nanolett.4c01441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
CsPbI3 perovskite quantum dots (QDs) could achieve pure-red emission by reducing their size, but the increased exciton binding energy (EB) and surface defects for the small-sized QDs (SQDs) cause severe Auger and trap recombinations, thus worsening their electroluminescence (EL) performance. Herein, we utilize the dangling bonds of the SQDs as a driving force to accelerate KI dissolution to solve its low solubility in nonpolar solvents, thereby allowing K+ and I- to bond to the surface of SQDs. The EB of the SQDs was decreased from 305 to 51 meV because of the attraction of K+ to electrons, meanwhile surface vacancies were passivated by K+ and I-. The Auger and trap recombinations were simultaneously suppressed by this difunctional ligand. The SQD-based light-emitting diode showed a stable pure-red EL peak of 639 nm, an external quantum efficiency of 25.1% with low roll-off, and a brightness of 5934 cd m-2.
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Affiliation(s)
- Jie Guo
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Mingyuan Xie
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, China
| | - Hangren Li
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Lin Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Linxing Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
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8
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Fu M, Critchley K. Inkjet printing of heavy-metal-free quantum dots-based devices: a review. NANOTECHNOLOGY 2024; 35:302002. [PMID: 38640903 DOI: 10.1088/1361-6528/ad40b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 04/19/2024] [Indexed: 04/21/2024]
Abstract
Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.
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Affiliation(s)
- Min Fu
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, United Kingdom
| | - Kevin Critchley
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, United Kingdom
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9
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Zhao J, Chen F, Jia H, Wang L, Liu P, Luo T, Guan L, Li X, Yin Z, Tang A. Boosting Cu─In─Zn─S-based Quantum-Dot Light-Emitting Diodes Enabled by Engineering Cu─NiO x/PEDOT:PSS Bilayered Hole-Injection Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307115. [PMID: 38059744 DOI: 10.1002/smll.202307115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 11/10/2023] [Indexed: 12/08/2023]
Abstract
The imbalance of charge injection is considered to be a major factor that limits the device performance of cadmium-free quantum-dot light-emitting diodes (QLEDs). In this work, high-performance cadmium-free Cu─In─Zn─S(CIZS)-based QLEDs are designed and fabricated through tailoring interfacial energy level alignment and improving the balance of charge injection. This is achieved by introducing a bilayered hole-injection layer (HIL) of Cu-doped NiOx (Cu─NiOx)/Poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). High-quality Cu─NiOx film is prepared through a novel and straightforward sol-gel procedure. Multiple experimental characterizations and theoretical calculations show that the incorporation of Cu2+ ions can regulate the energy level structure of NiOx and enhance the hole mobility. The state-of-art CIZS-based QLEDs with Cu─NiOx/PEDOT:PSS bilayered HIL exhibit the maximum external quantum efficiency of 6.04% and half-life time of 48 min, which is 1.3 times and four times of the device with only PEDOT:PSS HIL. The work provides a new pathway for developing high-performance cadmium-free QLEDs.
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Affiliation(s)
- Jinxing Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Fei Chen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Haoran Jia
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Lijin Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Ping Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Tao Luo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Li Guan
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Xu Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Zhe Yin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
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10
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Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
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Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
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11
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Wei S, Hu J, Bi C, Ren K, Wang X, de de Leeuw NH, Lu Y, Sui M, Wang W. Strongly-Confined CsPbBr 3 Perovskite Quantum Dots with Ultralow Trap Density and Narrow Size Distribution for Efficient Pure-Blue Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400885. [PMID: 38616736 DOI: 10.1002/smll.202400885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/26/2024] [Indexed: 04/16/2024]
Abstract
The development of pure-blue perovskite light-emitting diodes (PeLEDs) faces challenges of spectral stability and low external quantum efficiency (EQE) due to phase separation in mixed halide compositions. Perovskite quantum dots (QDs) with strong confinement effects are promising alternatives to achieve high-quality pure-blue PeLEDs, yet their performance is often hindered by the poor size distribution and high trap density. A strategy combining thermodynamic control with a polishing-driven ligand exchange process to produce high-quality QDs is developed. The strongly-confined pure-blue (≈470 nm) CsPbBr3 QDs exhibit narrow size distribution (12% dispersion) and are achieved in Br-rich ion environment based on growth thermodynamic control. Subsequent polishing-driven ligand exchange process removes imperfect surface sites and replaces initial long-chain organic ligands with short-chain benzene ligands. The resulting QDs exhibit high photoluminescence quantum yield (PLQY) to near-unity. The resulting PeLEDs exhibit a pure-blue electroluminescence (EL) emission at 472 nm with narrow full-width at half-maximum (FWHM) of 25 nm, achieving a maximum EQE of 10.7% and a bright maximum luminance of 7697 cd m-2. The pure-blue PeLEDs show ultrahigh spectral stability under high voltage, a low roll-off of EQE, and an operational half-lifetime (T50) of 127 min at an initial luminance of 103 cd m-2 under continuous operation.
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Affiliation(s)
- Shibo Wei
- Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao, 266000, China
- College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin, 150001, China
| | - Jingcong Hu
- Beijing Key Lab of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China
| | - Chenghao Bi
- Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao, 266000, China
- College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin, 150001, China
- Yantai Research Institute, Harbin Engineering University, Yantai, 264000, China
| | - Ke Ren
- Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao, 266000, China
- College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin, 150001, China
| | - Xingyu Wang
- School of Chemistry, University of Leeds, Leeds, LS2 9JT, UK
- Department of Earth Sciences, Utrecht University, Utrecht, 3584 CB, The Netherlands
| | - Nora H de de Leeuw
- School of Chemistry, University of Leeds, Leeds, LS2 9JT, UK
- Department of Earth Sciences, Utrecht University, Utrecht, 3584 CB, The Netherlands
| | - Yue Lu
- Beijing Key Lab of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China
| | - Manling Sui
- Beijing Key Lab of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China
| | - Wenxin Wang
- Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao, 266000, China
- College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin, 150001, China
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12
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Sun Z, Hou Q, Kong J, Wang K, Zhang R, Liu F, Ning J, Tang J, Du Z. Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots. Inorg Chem 2024; 63:6396-6407. [PMID: 38528328 DOI: 10.1021/acs.inorgchem.4c00168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly dangling bonds (DBs) and the undesirable oxides, the photoluminescence performance and stability of InP QDs remain to be improved. Previous investigations largely focus on eliminating P-DBs and resultant surface oxidation states; however, little attention has been paid to the adverse effects of the surface In-DBs on InP QDs. This work demonstrates a facile one-step surface peeling and passivation treatment method for both In- and P-DBs for InP QDs. Meanwhile, the surface treatment may also effectively support the encapsulation of the ZnSe shell. Finally, the generated InP/ZnSe QDs display a narrower full width at half-maximum (fwhm) of ∼48 nm, higher photoluminescence quantum yields (PLQYs) of ∼70%, and superior stability. This work enlarges the surface chemistry engineering consideration of InP QDs and considerably promotes the development of efficient and stable optoelectronic devices.
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Affiliation(s)
- Zhe Sun
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, P. R. China
| | - Qinggang Hou
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, P. R. China
| | - Jiahua Kong
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, P. R. China
| | - Keke Wang
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, P. R. China
| | - Ruiling Zhang
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, P. R. China
| | - Feng Liu
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, P. R. China
| | - Jiajia Ning
- Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Jianguo Tang
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, P. R. China
| | - Zhonglin Du
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, P. R. China
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13
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Tang X, Quan W, Yang F. Green-route manufacturing towards future industrialization of metal halide perovskite nanocrystals. Chem Commun (Camb) 2024; 60:1389-1403. [PMID: 38230642 DOI: 10.1039/d3cc05282f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Perovskite nanocrystals (PeNCs) with excellent optical properties have attracted tremendous research interests and have been considered as promising candidates for new-generation optoelectronic devices. Over the past few years, numerous efforts have been made to overcome the challenges in terms of sustainable manufacturing of PeNCs and related devices and systems, including the solvents used in precursor preparation, antisolvents and perovskite materials for the fabrication of devices and systems, and remarkable progress has been made. However, the usage of toxic, organic solvents in the synthesis of PeNCs poses a threat to the ecosystem and human health, which has hindered the progress in the commercialization and industrialization of PeNCs. This has promoted the development of green solvents for the sustainable manufacturing of PeNCs. In this Feature Article, a state-of-the-art green method for the synthesis of PeNCs is presented, in which the solvents of low toxicities are underlined in contrast to the reported Reviews which focus on toxic solvents for the preparation of precursor solutions. We then focus on green, aqueous methods for the preparation of PeNCs, including conventional perovskite and double PeNCs, by summarizing our previous research efforts and studies. In particular, pure water as the greenest solvent is introduced for the preparation of PeNCs, and the parameters affecting the size and optical characteristics of PeNCs, such as sonication time and ligands for post-treatment, are discussed. The strategies of using a passivation layer to improve the aqueous stability of PeNCs are reviewed, which are grouped into organic polymers and inorganic semiconductors. We highlight the challenges and possible solutions in the green manufacturing and applications of PeNCs. The green routes discussed in this article for the synthesis of PeNCs are expected to be a major step forward for the commercialization and industrialization of the fabrication of PeNCs. It is anticipated that green manufacturing will continue to be the mainstream in the synthesis and fabrication of PeNCs.
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Affiliation(s)
- Xiaobing Tang
- School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Wenzhuo Quan
- School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Fuqian Yang
- Materials Program, Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA.
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14
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Chen Z, Li H, Yuan C, Gao P, Su Q, Chen S. Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies. SMALL METHODS 2024; 8:e2300359. [PMID: 37357153 DOI: 10.1002/smtd.202300359] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Revised: 05/15/2023] [Indexed: 06/27/2023]
Abstract
Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.
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Affiliation(s)
- Zinan Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Haotao Li
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Cuixia Yuan
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Peili Gao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Qiang Su
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shuming Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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15
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Yu P, Cao S, Wang Y, Zhao J. Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes. J Phys Chem Lett 2024; 15:201-211. [PMID: 38157217 DOI: 10.1021/acs.jpclett.3c03137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.
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Affiliation(s)
- Peng Yu
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou 215123, China
| | - Jialong Zhao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China
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16
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Ripberger HH, Schnitzenbaumer KJ, Nguyen LK, Ladd DM, Levine KR, Dayton DG, Toney MF, Cossairt BM. Navigating the Potential Energy Surface of CdSe Magic-Sized Clusters: Synthesis and Interconversion of Atomically Precise Nanocrystal Polymorphs. J Am Chem Soc 2023; 145:27480-27492. [PMID: 38061033 DOI: 10.1021/jacs.3c08897] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Magic-sized clusters (MSCs) are kinetically stable, atomically precise intermediates along the quantum dot (QD) reaction potential energy surface. Literature precedent establishes two classes of cadmium selenide MSCs with QD-like inorganic cores: one class is proposed to be cation-rich with a zincblende crystal structure, while the other is proposed to be stoichiometric with a "wurtzite-like" core. However, the wide range of synthetic protocols used to access MSCs has made direct comparisons of their structure and surface chemistry difficult. Furthermore, the physical and chemical relationships between MSC polymorphs are yet to be established. Here, we demonstrate that both cation-rich and stoichiometric CdSe MSCs can be synthesized from identical reagents and can be interconverted through the addition of either excess cadmium or selenium precursor. The structural and compositional differences between these two polymorphs are contrasted using a combination of 1H NMR spectroscopy, X-ray diffraction (XRD), pair distribution function (PDF) analysis, inductively coupled plasma optical emission spectroscopy, and UV-vis transient absorption spectroscopy. The subsequent polymorph interconversion reactions are monitored by UV-vis absorption spectroscopy, with evidence for an altered cluster atomic structure observed by powder XRD and PDF analysis. This work helps to simplify the complex picture of the CdSe nanocrystal landscape and provides a method to explore structure-property relationships in colloidal semiconductors through atomically precise synthesis.
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Affiliation(s)
- Hunter H Ripberger
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Kyle J Schnitzenbaumer
- Division of Natural Sciences and Mathematics, Transylvania University, Lexington, Kentucky 40508-1797, United States
| | - Lily K Nguyen
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Dylan M Ladd
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80309, United States
| | - Kelsey R Levine
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80309, United States
| | - Damara G Dayton
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80309, United States
| | - Michael F Toney
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80309, United States
- Department of Chemical and Biological Engineering, Renewable and Sustainable Energy Institute, University of Colorado, Boulder, Colorado 80309, United States
| | - Brandi M Cossairt
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
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17
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Bi Y, Cao S, Yu P, Du Z, Wang Y, Zheng J, Zou B, Zhao J. Reducing Emission Linewidth of Pure-Blue ZnSeTe Quantum Dots through Shell Engineering toward High Color Purity Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303247. [PMID: 37420332 DOI: 10.1002/smll.202303247] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 06/19/2023] [Indexed: 07/09/2023]
Abstract
High color purity blue quantum dot light-emitting diodes (QLEDs) have great potential applications in the field of ultra-high-definition display. However, the realization of eco-friendly pure-blue QLEDs with a narrow emission linewidth for high color purity remains a significant challenge. Herein, a strategy for fabricating high color purity and efficient pure-blue QLEDs based on ZnSeTe/ZnSe/ZnS quantum dots (QDs) is presented. It is found that by finely controlling the internal ZnSe shell thickness of the QDs, the emission linewidth can be narrowed by reducing the exciton-longitudinal optical phonon coupling and trap states in the QDs. Additionally, the regulation of the QD shell thickness can suppress the Förster energy transfer between QDs in the QLED emission layer, which will help to reduce the emission linewidth of the device. As a result, the fabricated pure-blue (452 nm) ZnSeTe QLED with ultra-narrow electroluminescence linewidth (22 nm) exhibit high color purity with the Commission Internationale de l'Eclairage chromatic coordinates of (0.148, 0.042) and considerable external quantum efficiency (18%). This work provides a demonstration of the preparation of pure-blue eco-friendly QLEDs with both high color purity and efficiency, and it is believed that it will accelerate the application process of eco-friendly QLEDs in ultra-high-definition displays.
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Affiliation(s)
- Yuhe Bi
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Peng Yu
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Zhentao Du
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou, 215123, China
| | - Jinju Zheng
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China
| | - Bingsuo Zou
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Jialong Zhao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
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18
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Soheyli E, Biçer A, Ozel SS, Sahin Tiras K, Mutlugun E. Tuning the Shades of Red Emission in InP/ZnSe/ZnS Nanocrystals with Narrow Full Width for Fabrication of Light-Emitting Diodes. ACS OMEGA 2023; 8:39690-39698. [PMID: 37901544 PMCID: PMC10600898 DOI: 10.1021/acsomega.3c05580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 09/26/2023] [Indexed: 10/31/2023]
Abstract
While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris(dimethylamino)phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626-670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50-70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m-2, and a current efficiency of 0.88 cd A-1.
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Affiliation(s)
- Ehsan Soheyli
- Department
of Electrical-Electronics Engineering, Abdullah
Gül University, Kayseri 38080, Türkiye
| | - Ayşenur Biçer
- Department
of Electrical-Electronics Engineering, Abdullah
Gül University, Kayseri 38080, Türkiye
| | - Sultan Suleyman Ozel
- Department
of Electrical-Electronics Engineering, Abdullah
Gül University, Kayseri 38080, Türkiye
| | - Kevser Sahin Tiras
- Department
of Physics, Faculty of Sciences, Erciyes
University, Kayseri 38030, Türkiye
| | - Evren Mutlugun
- Department
of Electrical-Electronics Engineering, Abdullah
Gül University, Kayseri 38080, Türkiye
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19
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Dalui A, Ariga K, Acharya S. Colloidal semiconductor nanocrystals: from bottom-up nanoarchitectonics to energy harvesting applications. Chem Commun (Camb) 2023; 59:10835-10865. [PMID: 37608724 DOI: 10.1039/d3cc02605a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
Colloidal semiconductor nanocrystals (NCs) have been extensively investigated owing to their unique properties induced by the quantum confinement effect. The advent of colloidal synthesis routes led to the design of stable colloidal NCs with uniform size, shape, and composition. Metal oxides, phosphides, and chalcogenides (ZnE, CdE, PbE, where E = S, Se, or Te) are few of the most important monocomponent semiconductor NCs, which show excellent optoelectronic properties. The ability to build quantum confined heterostructures comprising two or more semiconductor NCs offer greater customization and tunability of properties compared to their monocomponent counterparts. More recently, the halide perovskite NCs showed exceptional optoelectronic properties for energy generation and harvesting applications. Numerous applications including photovoltaic, photodetectors, light emitting devices, catalysis, photochemical devices, and solar driven fuel cells have demonstrated using these NCs in the recent past. Overall, semiconductor NCs prepared via the colloidal synthesis route offer immense potential to become an alternative to the presently available device applications. This feature article will explore the progress of NCs syntheses with outstanding potential to control the shape and spatial dimensionality required for photovoltaic, light emitting diode, and photocatalytic applications. We also attempt to address the challenges associated with achieving high efficiency devices with the NCs and possible solutions including interface engineering, packing control, encapsulation chemistry, and device architecture engineering.
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Affiliation(s)
- Amit Dalui
- Department of Chemistry, Jogamaya Devi College, Kolkata-700026, India
| | - Katsuhiko Ariga
- Graduate School of Frontier Sciences, The University of Tokyo Kashiwa, Chiba 277-8561, Japan
- International Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
| | - Somobrata Acharya
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Kolkata-700032, India.
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20
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Lin Q, Zhu Y, Wang Y, Li D, Zhao Y, Liu Y, Li F, Huang W. Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210385. [PMID: 36880739 DOI: 10.1002/adma.202210385] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.
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Affiliation(s)
- Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yangbin Zhu
- School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, P. R. China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
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21
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Lee HJ, Im S, Jung D, Kim K, Chae JA, Lim J, Park JW, Shin D, Char K, Jeong BG, Park JS, Hwang E, Lee DC, Park YS, Song HJ, Chang JH, Bae WK. Coherent heteroepitaxial growth of I-III-VI 2 Ag(In,Ga)S 2 colloidal nanocrystals with near-unity quantum yield for use in luminescent solar concentrators. Nat Commun 2023; 14:3779. [PMID: 37355655 DOI: 10.1038/s41467-023-39509-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 06/14/2023] [Indexed: 06/26/2023] Open
Abstract
Colloidal Ag(In,Ga)S2 nanocrystals (AIGS NCs) with the band gap tunability by their size and composition within visible range have garnered surging interest. High absorption cross-section and narrow emission linewidth of AIGS NCs make them ideally suited to address the challenges of Cd-free NCs in wide-ranging photonic applications. However, AIGS NCs have shown relatively underwhelming photoluminescence quantum yield (PL QY) to date, primarily because coherent heteroepitaxy has not been realized. Here, we report the heteroepitaxy for AIGS-AgGaS2 (AIGS-AGS) core-shell NCs bearing near-unity PL QYs in almost full visible range (460 to 620 nm) and enhanced photochemical stability. Key to the successful growth of AIGS-AGS NCs is the use of the Ag-S-Ga(OA)2 complex, which complements the reactivities among cations for both homogeneous AIGS cores in various compositions and uniform AGS shell growth. The heteroepitaxy between AIGS and AGS results in the Type I heterojunction that effectively confines charge carriers within the emissive core without optically active interfacial defects. AIGS-AGS NCs show higher extinction coefficient and narrower spectral linewidth compared to state-of-the-art heavy metal-free NCs, prompting their immediate use in practicable applications including displays and luminescent solar concentrators (LSCs).
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Affiliation(s)
- Hak June Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyuri Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doyoon Shin
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kookheon Char
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byeong Guk Jeong
- School of Chemical and Biomolecular Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Hyung-Jun Song
- Department of Safety Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
| | - Jun Hyuk Chang
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
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22
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Nguyen HA, Dixon G, Dou FY, Gallagher S, Gibbs S, Ladd DM, Marino E, Ondry JC, Shanahan JP, Vasileiadou ES, Barlow S, Gamelin DR, Ginger DS, Jonas DM, Kanatzidis MG, Marder SR, Morton D, Murray CB, Owen JS, Talapin DV, Toney MF, Cossairt BM. Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution. Chem Rev 2023. [PMID: 37311205 DOI: 10.1021/acs.chemrev.3c00097] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.
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Affiliation(s)
- Hao A Nguyen
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Grant Dixon
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Florence Y Dou
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Shaun Gallagher
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Stephen Gibbs
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Dylan M Ladd
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Emanuele Marino
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Justin C Ondry
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - James P Shanahan
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Eugenia S Vasileiadou
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Stephen Barlow
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David S Ginger
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David M Jonas
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Seth R Marder
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel Morton
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Christopher B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jonathan S Owen
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Michael F Toney
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Brandi M Cossairt
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
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23
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Yu R, Yin F, Pu C, Zhou D, Ji W. On the electroluminescence overshoot of quantum-dot light-emitting diodes. OPTICS LETTERS 2023; 48:3059-3062. [PMID: 37262280 DOI: 10.1364/ol.492710] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 05/15/2023] [Indexed: 06/03/2023]
Abstract
The charge-carrier dynamics is a fundamental question in quantum-dot light-emitting diodes (QLEDs), determining the electroluminescence (EL) properties of the devices. By means of a hole-confined QLED design, the distribution and storage/residing of the charge carriers in the devices are deciphered by the transient electroluminescence (TrEL) spectroscopic technology. It is demonstrated that the holes stored in the quantum dots (QDs) are responsible for the EL overshoot during the rising edge of the TrEL response. Moreover, the earlier electroluminescence turn-on behavior is observed due to the holes residing in the hole-confined structure. The hole storage effect should be attributed to the ultralow hole mobility of QD films and large barrier for hole escape from the cores of the QDs. Our findings provide a deep understanding of the charge transport and storage at the most critical interface between QDs and hole-transport layer, where the excitons are formed.
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24
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Liu A, Bi C, Li J, Zhang M, Cheng C, Binks D, Tian J. High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots. NANO LETTERS 2023; 23:2405-2411. [PMID: 36881120 DOI: 10.1021/acs.nanolett.3c00548] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Here, we develop an in situ photoluminescence (PL) system to monitor the nucleation and growth of perovskite nanocrystals and control the monomer supply rate to achieve strongly confined and monodispersed quantum dots (QDs) with average size of 3.4 nm. Pure-blue (460 nm wavelength) CsPbBr3 QDs with near unity PL quantum yield and narrow size distribution (small size dispersion of 9.6%) were thus produced. Light-emitting diodes (LEDs) based on these QDs were prepared by using an all-solution processing route, which showed narrow electroluminescence with full width at half-maximum of 20 nm and a high color purity of 97.3%. The device also had a high external quantum efficiency of 10.1%, maximum luminance of 11 610 cd m-2, and continuous operation lifetime of 21 h at the initial luminance of 102 cd m-2, corresponding to the state-of-art for pure-blue perovskite LEDs.
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Affiliation(s)
- Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Shunde Innovation School, University of Science and Technology Beijing, Foshan 528399, Guangdong, P. R. China
| | - Chenghao Bi
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Jing Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Mengqi Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Chunyan Cheng
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - David Binks
- Department of Physics and Astronomy and Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Shunde Innovation School, University of Science and Technology Beijing, Foshan 528399, Guangdong, P. R. China
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25
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Du R, Li X, Li Y, Li Y, Hou T, Li Y, Qiao C, Zhang J. Cation Exchange Synthesis of Aliovalent Doped InP QDs and Their ZnSe xS 1-x Shell Coating for Enhanced Fluorescence Properties. J Phys Chem Lett 2023; 14:670-676. [PMID: 36637473 DOI: 10.1021/acs.jpclett.2c03515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
III-V quantum dots (QDs), in particular InP QDs, have emerged as high-performance and environmentally friendly candidates to replace cadmium based QDs. InP QDs exhibit properties of direct band gap structure, low toxicity, and high mobility, which make them suitable for high-performance optoelectronic applications. However, it is still challenging to precisely regulate the components and crystal structure of InP QDs, especially in the engineered stable aliovalent doping. In this work, we developed our original reverse cation exchange strategy to achieve Cu+ doped InP (InP:Cu) QDs at lower temperature. A ZnSexS1-x shell was then homogeneously grown on the InP:Cu QDs as the passivation shell. The as-prepared InP:Cu@ZnSexS1-x core-shell QDs exhibited better fluorescence properties with a photoluminescence quantum yield (PLQY) of 56.47%. Due to the existence of multiple luminous centers in the QDs, variable temperature-dependent fluorescence characteristics have been studied. The high photoluminescence characteristics in the near-infrared region indicate their potential applications in optoelectronic devices and biological fields.
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Affiliation(s)
- Ruizhi Du
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xinyuan Li
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - You Li
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yuxi Li
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Tailei Hou
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yuemei Li
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Chen Qiao
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiatao Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Key Laboratory of Medical Molecule Science and Pharmaceutical Engineering, Ministry of Industry and Information Technology, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
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26
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Eun YB, Jang GP, Yang JH, Kim SY, Chae YB, Ha MY, Moon DG, Kim CK. Performance Improvement of Quantum Dot Light-Emitting Diodes Using a ZnMgO Electron Transport Layer with a Core/Shell Structure. MATERIALS (BASEL, SWITZERLAND) 2023; 16:600. [PMID: 36676338 PMCID: PMC9862654 DOI: 10.3390/ma16020600] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 12/22/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Highly efficient and all-solution processed quantum dot light-emitting diodes (QLEDs) with high performance are demonstrated by employing ZnMgO nanoparticles (NPs) with core/shell structure used as an electron transport layer (ETL). Mg-doping in ZnO NPs exhibits a different electronic structure and degree of electron mobility. A key processing step for synthesizing ZnMgO NPs with core/shell structure is adding Mg in the solution in addition to the remaining Mg and Zn ions after the core formation process. This enhanced Mg content in the shell layer compared with that of the core X-ray photoelectron spectroscopy showed a higher number of oxygen vacancies for the ZnMgO core/shell structure, thereby enhancing the charge balance in the emitting layer and improving device efficiency. The QLED incorporating the as synthesized ZnMgO NP core/shell A exhibited a maximum luminance of 55,137.3 cd/m2, maximum current efficiency of 58.0 cd/A and power efficiency of 23.3 lm/W. The maximum current efficiency and power efficiency of the QLED with ZnMgO NP core/shell A improved by as much as 156.3% and 113.8%, respectively, compared to the QLED with a Zn0.9Mg0.1O NP ETL, thus demonstrating the benefits of ZnMgO NPs with the specified core/shell structure.
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Affiliation(s)
- Ye-Bin Eun
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Gyeong-Pil Jang
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Ji-Hun Yang
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Su-Young Kim
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Young-Bin Chae
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Mi-Young Ha
- Display New Technology Institute, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Dae-Gyu Moon
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
- Display New Technology Institute, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
| | - Chang-Kyo Kim
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
- Display New Technology Institute, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea
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27
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Karadza B, Van Avermaet H, Mingabudinova L, Hens Z, Meuret Y. Comparison of different RGB InP-quantum-dot-on-chip LED configurations. OPTICS EXPRESS 2022; 30:43522-43533. [PMID: 36523048 DOI: 10.1364/oe.476135] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 10/28/2022] [Indexed: 06/17/2023]
Abstract
InP/ZnSe/ZnS quantum dots (QDs) offer a cadmium-free solution to make white LEDs with a narrow blue, green and red emission peak. Such LEDs are required for display and lighting applications with high color gamut. An important phenomenon that hampers the efficiency of such quantum-dot-on-chip LEDs is re-absorption of already converted light by the QDs. Proposed solutions to remedy this effect often rely on complex or cost-ineffective manufacturing methods. In this work, four different RGB QD-on-chip LED package configurations are investigated that can be fabricated with a simple cavity encapsulation method. Using accurate optical simulations, the impact of QD re-absorption on the overall luminous efficacy of the light source is analyzed for these four configurations as a function of the photo-luminescent quantum yield (PLQY) of the QDs. The simulation results are validated by implementing these configurations in QD-on-chip LEDs using a single set of red and green emitting InP/ZnSe/ZnS QDs. In this way, the benefits are demonstrated of adding volume scattering particles or a hemispherical extraction dome to the LED package. The best configuration in terms of luminous efficacy, however, is one where the red QDs are deposited in the recycling cavity, while the green QDs are incorporated in the extraction dome. Using this configuration with green and red InP/ZnSe/ZnS QDs with a PLQY of 75% and 65% respectively, luminous efficacy of 102 lm/W was realized for white light with a CCT of 3000 K.
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28
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Xie M, Guo J, Zhang X, Bi C, Zhang L, Chu Z, Zheng W, You J, Tian J. High-Efficiency Pure-Red Perovskite Quantum-Dot Light-Emitting Diodes. NANO LETTERS 2022; 22:8266-8273. [PMID: 36251485 DOI: 10.1021/acs.nanolett.2c03062] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
It is still challenging to achieve high-efficiency pure-red (620-650 nm wavelength) perovskite light-emitting diodes (PeLEDs). Herein, we report pure-red PeLEDs with Commission Internationale de l'Eclairage coordinates (0.703, 0.297) meeting the Rec. 2020, an external quantum efficiency of 20.8%, and a luminance of 3775 cd/m2. This design is based on the strong quantum confinement CsPbI3 quantum dots (QDs) capped by composite ligands of 3-phenyl-1-propylamine and tetrabutylammonium iodide. This strategy stabilized the structure of the strong-confined QDs and reduced the influence of the electric field-induced Stark effect on the PeLEDs. Furthermore, the exciton binding energy of the QDs was decreased by the composited ligands to suppress Auger recombination within the devices. Additionally, the valence-band maximum of the QDs was lifted to match the hole-transport layer, thus balancing charge injection in the PeLEDs. Our device also demonstrated a stable electroluminescence spectrum and a lifetime of 5.6 times longer than the control device.
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Affiliation(s)
- Mingyuan Xie
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
| | - Jie Guo
- Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China
| | - Chenghao Bi
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
| | - Lin Zhang
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
| | - Zema Chu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, P. R. China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China
| | - Jingbi You
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, P. R. China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
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29
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Xiao H, Wang G, Zhang W, Lu S, Zhao B, Wang Z, Li Y, Liu J. Automatic Illumination Control Method for Indoor Luminaires Based on Multichromatic Quantum Dot Light-Emitting Diodes. MICROMACHINES 2022; 13:mi13101767. [PMID: 36296120 PMCID: PMC9610490 DOI: 10.3390/mi13101767] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Revised: 10/13/2022] [Accepted: 10/17/2022] [Indexed: 05/20/2023]
Abstract
Energy saving and visual comfort are two main considerations in designing of automatic illumination control systems. However, energy-saving-oriented illumination control always causes optical spectra drifting in light-conversion-material-based white light-emitting diodes (WLEDs), which are conventionally used as artificial luminaires in indoor areas. In this study, we propose a method for InP quantum dot (QD)-based WLEDs to minimize optical energy consumption by considering the influence caused by the outdoor environment and neighboring WLED units. Factors of (a) dimensions of room window and WLED matrix, (b) distance between WLED units, lighting height, species of InP QDs, and (c) user distribution are taken into consideration in calculation. Parameters of correlated color temperature (CCT) and color rendering index (Ra) of the WLED matrix are optimized according to the lighting environment to improve user visual comfort level. By dynamically controlling the light ingredients and optical power of WLEDs, we optimize the received illuminance distribution of table tops, improve the lighting homogeneity of all users, and guarantee the lowest energy consumption of the WLED matrix. The proposed approach can be flexibly applied in large-scale WLED intelligent controlling systems for industrial workshops and office buildings.
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Affiliation(s)
- Hua Xiao
- School of Electronic and Information Engineering, Guangdong Ocean University, Zhanjiang 524088, China
- Technology Development Centre, Shenzhen Institute of Guangdong Ocean University, Shenzhen 518120, China
- Correspondence:
| | - Guancheng Wang
- School of Electronic and Information Engineering, Guangdong Ocean University, Zhanjiang 524088, China
- Technology Development Centre, Shenzhen Institute of Guangdong Ocean University, Shenzhen 518120, China
| | - Wenda Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Sirong Lu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bingxin Zhao
- The Theory Technology Co., Ltd., Shenzhen 518126, China
| | - Zhanlang Wang
- School of Electronic and Information Engineering, Guangdong Ocean University, Zhanjiang 524088, China
| | - Yanglie Li
- School of Electronic and Information Engineering, Guangdong Ocean University, Zhanjiang 524088, China
| | - Jiada Liu
- School of Electronic and Information Engineering, Guangdong Ocean University, Zhanjiang 524088, China
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