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Romero MR, Bracamonte AG. Optical Active Meta-Surfaces, -Substrates, and Single Quantum Dots Based on Tuning Organic Composites with Graphene. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3242. [PMID: 38998324 PMCID: PMC11242519 DOI: 10.3390/ma17133242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2024] [Revised: 06/24/2024] [Accepted: 06/28/2024] [Indexed: 07/14/2024]
Abstract
In this communication, the design and fabrication of optical active metamaterials were developed by the incorporation of graphene and joining it to different substrates with variable spectroscopical properties. It focuses on how graphene and its derivatives could generate varied optical setups and materials considering modified and enhanced optics within substrates and surfaces. In this manner, it is discussed how light could be tuned and modified along its path from confined nano-patterned surfaces or through a modified micro-lens. In addition to these optical properties generated from the physical interaction of light, it should be added that the non-classical light pathways and quantum phenomena could participate. In this way, graphene and related carbon-based materials with particular properties, such as highly condensed electronics, pseudo-electromagnetic properties, and quantum and luminescent properties, could be incorporated. Therefore, the modified substrates could be switched by photo-stimulation with variable responses depending on the nature of the material constitution. Therefore, the optical properties of graphene and its derivatives are discussed in these types of metasurfaces with targeted optical active properties, such as within the UV, IR, and terahertz wavelength intervals, along with their further properties and respective potential applications.
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Affiliation(s)
- Marcelo R. Romero
- Departamento de Química Orgánica, Facultad de Ciencias Químicas (Universidad Nacional de Córdoba), IPQA−CONICET, Córdoba CP 5000, Argentina;
| | - A. Guillermo Bracamonte
- Departamento de Química Orgánica, Facultad de Ciencias Químicas, Instituto de Investigaciones en Físicoquímica de Córdoba (INFIQC), Universidad Nacional de Córdoba, Ciudad Universitaria, Córdoba CP 5000, Argentina
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2
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Wang H, Zhang B, Wang B, Bai S, Cheng L, Hu Y, Lu S. Efficient Quasi-2D Perovskite Based Blue Light-Emitting Diodes with Carbon Dots Modified Hole Transport Layer. NANO LETTERS 2024. [PMID: 38953472 DOI: 10.1021/acs.nanolett.4c02110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Quasi-2D perovskites based blue light-emitting diodes (LEDs) suffer from its poor electroluminescence performance, mainly caused by the nonradiative recombination in in defect-rich low-n phases and the unbalanced hole-electron injection in the device. Here, we developed a highly efficient quasi-2D perovskite based sky-blue LEDs behaving recorded external quantum efficiency (EQE) of 21.07% by employing carbon dots (CDs) as additives in the hole transport layer (HTL). We ascribe the high EQE to the effective engineering of CDs: (1) The CDs at the interface of HTLs can suppress the formation of low-efficient n = 1 phase, resulting a high luminescence quantum yield and energy transfer efficiency of the mixed n-phase quasi-2D perovskites. (2) The CDs additives can reduce the conductivity of HTL, partially blocking the hole injection, and thus making more balanced hole-electron injection. The CDs-treated devices have excellent Spectral stability and enhanced operational stability and could be a new alternative additive in the perovskite optoelectronic devices.
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Affiliation(s)
- Hongwei Wang
- College of Chemistry, Zhengzhou University, Zhengzhou 450000, China
| | - Baowei Zhang
- College of Chemistry, Zhengzhou University, Zhengzhou 450000, China
| | - Boyang Wang
- College of Chemistry, Zhengzhou University, Zhengzhou 450000, China
| | - Sai Bai
- Institute of Fundamental and Frontier Sciences, Key Laboratory of Quantum Physics and Photonic Quantum Information of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Liwen Cheng
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China
| | - Yongsheng Hu
- School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450000, China
| | - Siyu Lu
- College of Chemistry, Zhengzhou University, Zhengzhou 450000, China
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3
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Kong L, Luo Y, Wu Q, Xiao X, Wang Y, Chen G, Zhang J, Wang K, Choy WCH, Zhao YB, Li H, Chiba T, Kido J, Yang X. Efficient and stable hybrid perovskite-organic light-emitting diodes with external quantum efficiency exceeding 40 per cent. LIGHT, SCIENCE & APPLICATIONS 2024; 13:138. [PMID: 38866757 PMCID: PMC11169476 DOI: 10.1038/s41377-024-01500-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 05/19/2024] [Accepted: 05/30/2024] [Indexed: 06/14/2024]
Abstract
Light-emitting diodes (LEDs) based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies, but still suffer from severe instability driven by electric field. Here, we develop a stable, efficient and high-color purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of perovskites. Perovskite LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission spectra. By designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating, the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm, a peak luminance of over 176,000 cd m-2, a maximum external quantum efficiency of over 40%, and an operational half-lifetime of over 42,000 h.
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Affiliation(s)
- Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Yun Luo
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Qianqian Wu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Xiangtian Xiao
- Institute of Nanoscience and Applications, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuanzhi Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Guo Chen
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China.
| | - Kai Wang
- Institute of Nanoscience and Applications, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Wallace C H Choy
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Yong-Biao Zhao
- Department of Physics and Lakeside AR/VR Laboratory, International Joint Research Center for Optoelectronic and Engineering Research, Yunnan University, Kunming, 650091, China
| | - Hongbo Li
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Takayuki Chiba
- Graduate School of Organic Materials Science, Frontier Center for Organic Materials, Yamagata University, 4-3-16 Jonan, Yonezawa, 992-8510, Japan
| | - Junji Kido
- Graduate School of Organic Materials Science, Frontier Center for Organic Materials, Yamagata University, 4-3-16 Jonan, Yonezawa, 992-8510, Japan
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China.
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4
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Yang F, Dong W, Kang C, Zhu Z, Zeng Q, Zheng W, Zhang X, Yang B. Solvent-Reconstructed Interface That Enhances Light Out-Coupling in Quasi-Two-Dimensional Perovskite Light-Emitting Diodes. NANO LETTERS 2024; 24:7012-7018. [PMID: 38820129 DOI: 10.1021/acs.nanolett.4c01455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2024]
Abstract
Light management is critical to maximizing the external quantum efficiency of perovskite light-emitting diodes (PeLEDs), but strategies for enhancing light out-coupling are typically complex and expensive. Here, using a facile solvent treatment strategy, we create a layer of lithium fluoride (LiF) nanoislands that serve as a template to reconstruct the light-extracting interfaces for PeLEDs. The nanoisland interface rearranges the near-field light distribution in order to maximize the efficiency of internal light extraction. With the proper adjustment of the nanoisland size and distribution, we have achieved an optimal balance between charge injection and light out-coupling, resulting in bright, pure-red quasi-two-dimensional PeLEDs with a 21.8% peak external quantum efficiency.
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Affiliation(s)
- Fan Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Wei Dong
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, P. R. China
| | - Chunyuan Kang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Zhicheng Zhu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Qingsen Zeng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Weitao Zheng
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, P. R. China
| | - Xiaoyu Zhang
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, P. R. China
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
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5
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Dong W, Li H, Li J, Hua Y, Yang F, Dong Q, Zhang X, Zheng W. Precursor Engineering Induced High-Efficiency Electroluminescence of Quasi-Two-Dimensional Perovskites: A Synergistic Defect Inhibition and Passivation Approach. NANO LETTERS 2024; 24:3952-3960. [PMID: 38527956 DOI: 10.1021/acs.nanolett.4c00256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Despite light-emitting diodes (LEDs) based on quasi-two-dimensional (Q-2D) perovskites being inexpensive and exhibiting high performance, defects still limit the improvement of electroluminescence efficiency and stability by causing nonradiative recombination. Here, an organic molecule, 1-(o-tolyl) biguanide, is used to simultaneously inhibit and passivate defects of Q-2D perovskites via in situ synchronous crystallization. This molecule not only prevents surface bromine vacancies from forming through hydrogen bonding with the bromine of intermediaries but also passivates surface defects through its interaction with uncoordinated Pb. Via combination of defect inhibition and passivation, the trap density of Q-2D perovskite films can be significantly reduced, and the emission efficiency of the film can be improved. Consequently, the corresponding LED shows an external quantum efficiency of 24.3%, and its operational stability has been increased nearly 15 times.
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Affiliation(s)
- Wei Dong
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, P. R. China
| | - Hanming Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China
| | - Jing Li
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, P. R. China
| | - Yulu Hua
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, P. R. China
| | - Fan Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
| | - Qingfeng Dong
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, P. R. China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, P. R. China
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6
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Dai J, Roshan H, De Franco M, Goldoni L, De Boni F, Xi J, Yuan F, Dong H, Wu Z, Di Stasio F, Manna L. Partial Ligand Stripping from CsPbBr 3 Nanocrystals Improves Their Performance in Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11627-11636. [PMID: 38381521 DOI: 10.1021/acsami.3c15201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Halide perovskite nanocrystals (NCs), specifically CsPbBr3, have attracted considerable interest due to their remarkable optical properties for optoelectronic devices. To achieve high-efficiency light-emitting diodes (LEDs) based on CsPbBr3 nanocrystals (NCs), it is crucial to optimize both their photoluminescence quantum yield (PLQY) and carrier transport properties when they are deposited to form films on substrates. While the exchange of native ligands with didodecyl dimethylammonium bromide (DDAB) ligand pairs has been successful in boosting their PLQY, dense DDAB coverage on the surface of NCs should impede carrier transport and limit device efficiency. Following our previous work, here, we use oleyl phosphonic acid (OLPA) as a selective stripping agent to remove a fraction of DDAB from the NC surface and demonstrate that such stripping enhances carrier transport while maintaining a high PLQY. Through systematic optimization of OLPA dosage, we significantly improve the performance of CsPbBr3 LEDs, achieving a maximum external quantum efficiency (EQE) of 15.1% at 516 nm and a maximum brightness of 5931 cd m-2. These findings underscore the potential of controlled ligand stripping to enhance the performance of CsPbBr3 NC-based optoelectronic devices.
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Affiliation(s)
- Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Hossein Roshan
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Manuela De Franco
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
- Università degli Studi di Genova, Via Dodecaneso 31, 16146Genova, Italy
| | - Luca Goldoni
- Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Francesco De Boni
- Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Francesco Di Stasio
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
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7
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Lu P, Liu A, Lu M, Zhang F, Sun S, Liu M, Wu Z, Wang X, Dong W, Qin F, Gao Y, Bai X, Zhang Y. Multi-Species Surface Reconstruction for High-Efficiency Perovskite Nanocrystal Light-Emitting Diodes. Angew Chem Int Ed Engl 2024; 63:e202317376. [PMID: 38229423 DOI: 10.1002/anie.202317376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 01/12/2024] [Accepted: 01/15/2024] [Indexed: 01/18/2024]
Abstract
Although colloidal perovskite nanocrystal (PNC) solution has exhibited near-unity photoluminescence quantum yield (PLQY), the luminance would be severely quenched when the PNC solution is assembled into thin films due to the agglomeration and fusion of NCs caused by the exfoliation of surface ligands and non-radiative Förster resonance energy transfer (FRET) from small to large particle sizes, which seriously affected the performances of light-emitting diodes (LEDs). Here, we used Guanidine thiocyanate (GASCN) and Sodium thiocyanate (NaSCN) to achieve effective CsPbI3 PNC surface reconstruction. Due to the strong coordination ability of these small molecules with the anions and cations on the surface of the PNCs, they can provide strong surface protection against PNC fusion during centrifugal purification process and repair the surface defects of PNCs, so that the original uniform size distribution of PNCs can be maintained and FRET between close-packed PNC films is effectively suppressed, which allows the emission characteristics of the films to be preserved. As a result, highly oriented, smooth and nearly defect-free high-quality PNC thin films are obtained, with PLQY as high as 95.1 %, far exceeding that of the original film, and corresponding LEDs exhibit a maximum external quantum efficiency of 24.5 %.
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Affiliation(s)
- Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Anqi Liu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Fujun Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Mingze Liu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Wang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Weinan Dong
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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8
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Qin F, Li T, Lu M, Sun S, Lu P, Li X, Feng N, Zhang Y, Gao Y, Wu Z, Hu J, Yan F, Bai X. Highly Efficient and Flexible Perovskite Nanocrystal Light-Emitting Diodes on Disposable Paper Substrates. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47278-47285. [PMID: 37774397 DOI: 10.1021/acsami.3c10070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/01/2023]
Abstract
Perovskite nanocrystals have been widely applied in the field of light-emitting diodes (LEDs) due to their excellent optoelectronic properties. However, there is generally a serious degradation of device efficiency when transferring the device from rigid to flexible substrates due to the high roughness, poor wettability, and low endurance temperature of flexible substrates. Herein, a highly flexible perovskite light-emitting diode (PeLED) by utilizing label paper as substrates and poly(methyl methacrylate) (PMMA) as the modified layer was reported. Compared with the reference device based on commonly used polyethylene terephthalate (PET) substrates, the label paper/PMMA-based devices did not show the degraded device performance when transferring from rigid to flexible substrates. This is mainly because of low roughness and good wettability of PMMA-modified label paper, which significantly improve the film-forming ability of the bottom electrode and functional layer. Furthermore, the flexibility of both devices was explored by a three-point bending flexural test, indicating that the label paper-based device has better bending stability than the polyethylene terephthalate-based one due to the lower flexural modulus for label paper. As a result, the label paper-based flexible PeLEDs exhibited the highest external quantum efficiency (EQE) of 14.3% among perovskite nanocrystal-based flexible LEDs and preeminent flexibility with 29% luminance degradation after bending for 1000 cycles at a small radius of 1.5 mm. This extension of the substrate to paper will widen the opportunity of PeLEDs in extremely flexible and inexpensive applications.
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Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Ting Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xin Li
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Nannan Feng
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Junhua Hu
- Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
| | - Fengping Yan
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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9
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Lu P, Li T, Lu M, Ruan C, Sun S, Wu Z, Zhong Y, Zhang F, Gao Y, Huang Y, Wang Y, Hu J, Yan F, Zhang Y. Enrichment of anchoring sites by introducing supramolecular halogen bonds for the efficient perovskite nanocrystal LEDs. LIGHT, SCIENCE & APPLICATIONS 2023; 12:215. [PMID: 37666825 PMCID: PMC10477334 DOI: 10.1038/s41377-023-01266-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Revised: 07/28/2023] [Accepted: 08/18/2023] [Indexed: 09/06/2023]
Abstract
Considering the multi-functionalization of ligands, it is crucial for ligand molecular design to reveal the landscape of anchoring sites. Here, a typical triphenylphosphine (TPP) ligand was employed to explore its effect on the surface of CsPbI3 perovskite nanocrystals (PNCs). Except for the conventionally considered P-Pb coordination, an P-I supramolecular halogen bonding was also found on the NC surface. The coexistence of the above two types of bonding significantly increased the formation energy of iodine vacancy defects and improved the photoluminescence quantum yield of PNCs up to 93%. Meanwhile, the direct interaction of P and I enhanced the stability of the Pb-I octahedra and dramatically inhibited the migration of I ions. Furthermore, the introduction of additional benzene rings (2-(Diphenylphosphino)-biphenyl (DPB)) increased the delocalized properties of the PNC surface and significantly improved the charge transport of the PNCs. As a result, the DPB passivated CsPbI3 NCs based top-emitting LEDs exhibite a peak external quantum efficiency (EQE) of 22.8%, a maximum luminance of 15, 204 cd m-2, and an extremely low-efficiency roll-off of 2.6% at the current density of 500 mA cm-2.
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Affiliation(s)
- Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Ting Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China.
| | - Cheng Ruan
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yuan Zhong
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Fujun Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yaowei Huang
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China
| | - Yang Wang
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China.
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Junhua Hu
- Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering, Zhengzhou University, Zhengzhou, China
| | - Fengping Yan
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, China.
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China.
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