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Li R, Xu Y, Zhang S, Ma Y, Liu J, Zhou B, Wang L, Zhuo N, Liu J, Zhang J, Zhai S, Liu S, Liu F, Lu Q. High brightness terahertz quantum cascade laser with near-diffraction-limited Gaussian beam. LIGHT, SCIENCE & APPLICATIONS 2024; 13:193. [PMID: 39152111 PMCID: PMC11329767 DOI: 10.1038/s41377-024-01567-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 07/30/2024] [Accepted: 08/06/2024] [Indexed: 08/19/2024]
Abstract
High-power terahertz (THz) quantum cascade laser, as an emerging THz solid-state radiation source, is attracting attention for numerous applications including medicine, sensing, and communication. However, due to the sub-wavelength confinement of the waveguide structure, direct beam brightness upscaling with device area remains elusive due to several mode competition and external optical lens is normally used to enhance the THz beam brightness. Here, we propose a metallic THz photonic crystal resonator with a phase-engineered design for single mode surface emission over a broad area. The quantum cascade surface-emitting laser is capable of delivering an output peak power over 185 mW with a narrow beam divergence of 4.4° × 4.4° at 3.88 THz. A high beam brightness of 1.6 × 107 W sr-1m-2 with near-diffraction-limited M2 factors of 1.4 in both vertical and lateral directions is achieved from a large device area of 1.6 × 1.6 mm2 without using any optical lenses. The adjustable phase shift between the lattices enables a stable and high-intensity surface emission over a broad device area, which makes it an ideal light extractor for large-scale THz emitters. Our research paves the way to high brightness solid-state THz lasers and facilitates new applications in standoff THz imaging, detection, and diagnosis.
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Affiliation(s)
- Rusong Li
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunfei Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Shichen Zhang
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Yu Ma
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Junhong Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Binru Zhou
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lijun Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
| | - Ning Zhuo
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Junqi Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jinchuan Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Shenqiang Zhai
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Shuman Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Fengqi Liu
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Quanyong Lu
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
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Liu J, Xu Y, Li R, Sun Y, Xin K, Zhang J, Lu Q, Zhuo N, Liu J, Wang L, Cheng F, Liu S, Liu F, Zhai S. High-power electrically pumped terahertz topological laser based on a surface metallic Dirac-vortex cavity. Nat Commun 2024; 15:4431. [PMID: 38789458 PMCID: PMC11126746 DOI: 10.1038/s41467-024-48788-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Accepted: 05/10/2024] [Indexed: 05/26/2024] Open
Abstract
Topological lasers (TLs) have attracted widespread attention due to their mode robustness against perturbations or defects. Among them, electrically pumped TLs have gained extensive research interest due to their advantages of compact size and easy integration. Nevertheless, limited studies on electrically pumped TLs have been reported in the terahertz (THz) and telecom wavelength ranges with relatively low output powers, causing a wide gap between practical applications. Here, we introduce a surface metallic Dirac-vortex cavity (SMDC) design to solve the difficulty of increasing power for electrically pumped TLs in the THz spectral range. Due to the strong coupling between the SMDC and the active region, robust 2D topological defect lasing modes are obtained. More importantly, enough gain and large radiative efficiency provided by the SMDC bring in the increase of the output power to a maximum peak power of 150 mW which demonstrates the practical application potential of electrically pumped TLs.
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Affiliation(s)
- Junhong Liu
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Yunfei Xu
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Rusong Li
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Yongqiang Sun
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Kaiyao Xin
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Jinchuan Zhang
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
| | - Quanyong Lu
- Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing, China.
| | - Ning Zhuo
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
| | - Junqi Liu
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Lijun Wang
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Fengmin Cheng
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
| | - Shuman Liu
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Fengqi Liu
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
| | - Shenqiang Zhai
- Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
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Ullah S, Zhuge M, Zhang L, Fu X, Ma Y, Yang Q. Single-mode nanolasers based on FP-WGM hybrid cavity coupling. NANOTECHNOLOGY 2024; 35:205201. [PMID: 38350123 DOI: 10.1088/1361-6528/ad28d4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 02/13/2024] [Indexed: 02/15/2024]
Abstract
As an idealized light source, semiconductor nanowire (NW) lasers have been extensively studied due to its potential applications in many fields such as optoelectronics, nanophononics, optical communication, signal processing, and displays. In this letter, we proposed a novel approach to realize a single-mode nanolaser by forming an Fabry-Perot whispering gallery mode (FP-WGM) hybrid nanocavity between two cross-contact CdS NWs, i.e.xandy-NW. In our method,x-NW supports the regular FP oscillation in the axis direction while the cross section ofy-NW provides a ultrasmall WGM nanocavity with a higherQ-factor and mode election which confirms the specific single mode can be excited. Experimentally, single-mode lasing emission centered at 517 nm was obtained with full width at half maximum of 0.08 nm and lasing threshold of ∼50 kW cm-2. The suggested designing skills projected a general strategy for lasing mode regulation and single-mode realization. The single-mode low-threshold lasing strategy in coupled NWs may open a new avenue for practical applications of NW lasers and further trigger other photonic devices at a visible range.
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Affiliation(s)
- Salman Ullah
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, People's Republic of China
| | - Minghua Zhuge
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Liang Zhang
- Research Center for Novel Computational Sensing and Intelligent Processing, Zhejiang Lab, Hangzhou 311100, People's Republic of China
| | - Xiang Fu
- Research Center for Novel Computational Sensing and Intelligent Processing, Zhejiang Lab, Hangzhou 311100, People's Republic of China
| | - Yaoguang Ma
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Qing Yang
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, People's Republic of China
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Maleki J, Fathi D. Refractive index sensor based on fano-magnetic toroidal quadrupole resonance enabled by bound state in the continuum in all-dielectric metasurface. Sci Rep 2024; 14:4110. [PMID: 38374397 PMCID: PMC10876670 DOI: 10.1038/s41598-024-54579-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Accepted: 02/14/2024] [Indexed: 02/21/2024] Open
Abstract
For the first time, an all-dielectric metasurface ultra-sensitive refractive index (RI) sensor with very high quality factor (QF) and figure of merit (FOM), with Fano-magnetic toroidal quadrupole (MTQ) resonance enabled by bound state in continuum (BIC) in terahertz (THz) region was designed. Furthermore, the MTQ resonance in the THz due to a distortion of symmetry-protected bound states in the continuum in the designed structure was investigated. Also, to achieve the dark mode, a combination of three methods including (i) breaking the symmetry, (ii) design of complex structures, and (iii) changing the incident angle was utilized. The broken symmetry in the structure caused a new mode to be excited, which is suitable for sensing applications. The designed metasurface was able to sense a wide range of RI in MTQ resonance, where its properties were improved for the value of sensitivity (S) from 217 GHz/RIU to 625 GHz/RIU, for FOM from 197 RIU-1 to 2.21 × 106 RIU-1 and for QF from 872 to 5.7 × 106.
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Affiliation(s)
- Javad Maleki
- Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran
| | - Davood Fathi
- Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran.
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