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Guan R, Xu H, Lou Z, Zhao Z, Wang L. Design and Development of Metasurface Materials for Enhancing Photodetector Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402530. [PMID: 38970208 DOI: 10.1002/advs.202402530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 05/20/2024] [Indexed: 07/08/2024]
Abstract
Recently, metasurface-based photodetectors (metaphotodetectors) have been developed and applied in various fields. Metasurfaces are artificial materials with unique properties that have emerged over the past decade, and photodetectors are powerful tools used to quantify incident electromagnetic wave information by measuring changes in the conductivity of irradiated materials. Through an efficient microstructural design, metasurfaces can effectively regulate numerous characteristics of electromagnetic waves and have demonstrated unique advantages in various fields, including holographic projection, stealth, biological image enhancement, biological sensing, and energy absorption applications. Photodetectors play a crucial role in military and civilian applications; therefore, efficient photodetectors are essential for optical communications, imaging technology, and spectral analysis. Metaphotodetectors have considerably improved sensitivity and noise-equivalent power and miniaturization over conventional photodetectors. This review summarizes the advantages of metaphotodetectors based on five aspects. Furthermore, the applications of metaphotodetectors in various fields including military and civil applications, are systematically discussed. It highlights the potential future applications and developmental trends of metasurfaces in metaphotodetectors, provides systematic guidance for their development, and establishes metasurfaces as a promising technology.
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Affiliation(s)
- Renquan Guan
- State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Hao Xu
- State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhao Zhao
- Faculty of Physics, Northeast Normal University, Changchun, 130024, China
| | - Lili Wang
- State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Guo F, Liu Y, Zhang M, Yu W, Li S, Zhang B, Hu B, Zhong L, Jie W, Hao L. A Dual-Functional Integration of Photodetectors and Artificial Optoelectronic Synapses on a VO 2/WO 3 Heterojunction Device. SMALL METHODS 2024:e2400779. [PMID: 38940078 DOI: 10.1002/smtd.202400779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2024] [Revised: 06/18/2024] [Indexed: 06/29/2024]
Abstract
Bionic visual systems require multimodal integration of eye-like photodetectors and brain-like image memory. However, the integration of photodetectors (PDs) and artificial optoelectronic synapses devices (OESDs) by one device remains a giant challenge due to their photoresponse discrepancy. Herein, a dual-functional integration of PDs and OESDs based on VO2/WO3 heterojunctions is presented. The device can be able to realize a dual-mode conversion between PDs and OESDs through tuning the bias voltage. Under zero bias voltage, the device exhibiting excellent photodetecting behaviors based on the photovoltaic effect, showing a high self-powered photoresponsivity of 18.5 mA W-1 and high detectivity of 7.5 × 1010 Jones with fast photoresponse. When the external bias voltages are applied, it can be acted as an OESD and exhibit versatile electrical and photonic synaptic characteristics based on the trapping and detrapping effects, including synaptic plasticity and learning-experience behaviors. More importantly, benefiting from the excellent photosensing ability and transporting properties, the device shows ultralow-power consumption of 39.0 pJ and a 4 × 4 OESDs array is developed to realize the visual perception and memory. This work not only supplies a novel route to realize complex functional integration just in one device, but also offers effective strategies for developing neuromorphic visual system.
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Affiliation(s)
- Fuhai Guo
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Lun Zhong
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
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Liu L, Liu W, Wang F, Peng X, Choi DY, Cheng H, Cai Y, Chen S. Ultra-robust informational metasurfaces based on spatial coherence structures engineering. LIGHT, SCIENCE & APPLICATIONS 2024; 13:131. [PMID: 38834550 DOI: 10.1038/s41377-024-01485-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Revised: 04/25/2024] [Accepted: 05/15/2024] [Indexed: 06/06/2024]
Abstract
Optical information transmission is vital in modern optics and photonics due to its concurrent and multi-dimensional nature, leading to tremendous applications such as optical microscopy, holography, and optical sensing. Conventional optical information transmission technologies suffer from bulky optical setup and information loss/crosstalk when meeting scatterers or obstacles in the light path. Here, we theoretically propose and experimentally realize the simultaneous manipulation of the coherence lengths and coherence structures of the light beams with the disordered metasurfaces. The ultra-robust optical information transmission and self-reconstruction can be realized by the generated partially coherent beam with modulated coherence structure even 93% of light is recklessly obstructed during light transmission, which brings new light to robust optical information transmission with a single metasurface. Our method provides a generic principle for the generalized coherence manipulation on the photonic platform and displays a variety of functionalities advancing capabilities in optical information transmission such as meta-holography and imaging in disordered and perturbative media.
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Affiliation(s)
- Leixin Liu
- Shandong Provincial Engineering and Technical Center of Light Manipulations, Collaborative Innovation Center of Light Manipulation and Applications, Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Wenwei Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300071, China.
| | - Fei Wang
- School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Xiaofeng Peng
- Shandong Provincial Engineering and Technical Center of Light Manipulations, Collaborative Innovation Center of Light Manipulation and Applications, Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Duk-Yong Choi
- Laser Physics Centre, Research School of Physics, Australian National University, Canberra, ACT, 2601, Australia
| | - Hua Cheng
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300071, China
| | - Yangjian Cai
- Shandong Provincial Engineering and Technical Center of Light Manipulations, Collaborative Innovation Center of Light Manipulation and Applications, Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China.
| | - Shuqi Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300071, China.
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.
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Leng R, Chen X, Liu P, Zhu Z, Zhang J. High Q lithium niobate metasurfaces with transparent electrodes for efficient amplitude and phase modulation. APPLIED OPTICS 2024; 63:3156-3161. [PMID: 38856460 DOI: 10.1364/ao.514979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Accepted: 03/27/2024] [Indexed: 06/11/2024]
Abstract
Lithium niobate (LN)-based metasurfaces have demonstrated remarkable potential in integrated electro-optically adjustable metadevices with the maturation of thin film LN on insulator (LNOI) technology. Here, we proposed a type of high Q factor tunable metasurface with etchless LN, which is electrically driven in the vertical direction by using transparent conductive film. A transmission amplitude modulation of over 60 dB at a voltage of 20 V is realized through guided mode resonances created at the LN layer with a Q factor of 1320. Meanwhile, phase modulation is also realized with a reflective design by adding a gold layer at the bottom of the metasurface. With a gate voltage of 80 V, about 1.75π phase modulation is achieved while keeping reflection over 92%. Our proposed device achieves effective modulation of optical amplitude and phase in the near-infrared band, which lays a good foundation for the development of high performance LN-based active nanophotonic devices.
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Zhang ZH, Yan SS, Chen YL, Lian ZD, Fu A, Kong YC, Li L, Su SC, Ng KW, Wei ZP, Liu HC, Wang SP. Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu 2I 3 Microwire Arrays. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10398-10406. [PMID: 38380978 PMCID: PMC10910456 DOI: 10.1021/acsami.3c17881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Revised: 01/29/2024] [Accepted: 02/05/2024] [Indexed: 02/22/2024]
Abstract
The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.
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Affiliation(s)
- Zhi-Hong Zhang
- State
Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Shan-Shan Yan
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Yu-Long Chen
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Zhen-Dong Lian
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Ai Fu
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - You-Chao Kong
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Lin Li
- Key
Laboratory for Photonic and Electronic Bandgap Materials, Ministry
of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Shi-Chen Su
- School
of Semiconductor Science and Technology, South China Normal University, Foshan 528000, China
| | - Kar-Wei Ng
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Zhi-Peng Wei
- State
Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Hong-Chao Liu
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Shuang-Peng Wang
- Institute
of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
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Yu WK, Wang SF, Shang KQ. Optical Encryption Using Attention-Inserted Physics-Driven Single-Pixel Imaging. SENSORS (BASEL, SWITZERLAND) 2024; 24:1012. [PMID: 38339728 PMCID: PMC10857763 DOI: 10.3390/s24031012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Revised: 01/16/2024] [Accepted: 02/01/2024] [Indexed: 02/12/2024]
Abstract
Optical encryption based on single-pixel imaging (SPI) has made great advances with the introduction of deep learning. However, the use of deep neural networks usually requires a long training time, and the networks need to be retrained once the target scene changes. With this in mind, we propose an SPI encryption scheme based on an attention-inserted physics-driven neural network. Here, an attention module is used to encrypt the single-pixel measurement value sequences of two images, together with a sequence of cryptographic keys, into a one-dimensional ciphertext signal to complete image encryption. Then, the encrypted signal is fed into a physics-driven neural network for high-fidelity decoding (i.e., decryption). This scheme eliminates the need for pre-training the network and gives more freedom to spatial modulation. Both simulation and experimental results have demonstrated the feasibility and eavesdropping resistance of this scheme. Thus, it will lead SPI-based optical encryption closer to intelligent deep encryption.
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Affiliation(s)
- Wen-Kai Yu
- Center for Quantum Technology Research, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China; (S.-F.W.); (K.-Q.S.)
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