Chip-scale optical airflow sensor

Effect of temperature on GaN-integrated optical transceiver chips

The gallium nitride (GaN) integrated optical transceiver chip based on multiple quantum wells (MQW) structure exhibits great promise in the fields of communication and sensing. In this Letter, the effect of ambient temperature on the performance of GaN-integrated optical transceiver chips including a blue MQW light-emitting diode (LED) and a MQW photodiode (PD) is comprehensively studied. Temperature-dependent light-emitting and current-voltage characteristics of the blue MQW LEDs are measured with the ambient temperature ranging from -70°C to 120°C. The experimental results reveal a decline in the electroluminescent (EL) intensity and an obvious redshift in the emission peak wavelength of the LED with increasing ambient temperature. The light detection performance of MQW PD under different temperatures is also measured with the illumination of an external blue MQW LED, indicating an enhancement in the PD sensitivity as the temperature rises. Finally, the temperature effect on the MQW PD under the illumination of the MQW LED on the GaN-integrated optical transceiver chip is characterized, and the PD photocurrent increases with higher ambient temperature. Furthermore, the measured temperature characteristics indicate that the GaN-integrated optical transceiver chip offers a promising application potential for optoelectronic temperature sensor.

Design and fabrication of a simple and cost-effective optical flow meter using liquid crystals and textile grid

The measurement of airflow velocity is crucial in various fields, and several sensing approaches have been developed for detecting airflow, including optical fiber-based flowmeters. However, these sensors often require complex fabrication processes and precise optical alignment. In this paper, a simpler and more cost-effective approach has been used to measure air flow rate by utilizing the birefringence property of liquid crystals (LCs). LCs possess distinct optical characteristics, and their reorientation due to airflow can be detected by observing the intensity of the output light between crossed polarizers. The novelty of this study is the utilization of a textile grid to hold the LC layer, which simplifies the fabrication process. This LC-based gas flowmeter offers a simple, low-cost setup and provides rapid performance. This research presents what we believe to be a new approach to calculate airflow by exploiting the optical properties of LCs, which is a new frontier in gas flow measurement. The proposed airflow meter is capable of detecting airflow rates ranging from 0 l/min to 7.5 l/min with an accuracy of 0.5 l/min. It exhibits a stable response time in 75 seconds, and the sensor maintains acceptable stability over time.

Touchless Input/Output Interface for Device-to-Device Communication

Multiple quantum well (MQW) III-nitride diodes show selectable functionalities of light-emitting and light-detecting behaviors, enabling direct touchless device-to-device communication. Here, we propose and demonstrate a touchless input/output (I/O) interface using a single MQW III-nitride diode. By integrating an MQW III-nitride diode with a memory via a control circuit, optical signals are converted into electrical ones to be written into a memory, and consequently, electrical information is read out from the memory to be translated into optical signals for visible light communication (VLC). The MQW III-nitride diode can not only lead to a touchless ″writing″ action but also offer a ″reading″ process through light. Such touchless I/O interface would provide new forms of interactivity for device-to-device communication technologies.

Miniature GaN optoelectronic temperature sensor

The combination of plastic optical fiber (POF) with monolithically integrated transmitter and receiver is becoming increasingly attractive for the development of miniature optoelectronic sensing systems. Here, we propose a temperature sensing system by integrating a GaN optoelectronic chip with a POF and aluminum (Al) reflector. Owing to the overlap between electroluminescence and responsivity spectra of multiple quantum well (MQW) diodes, both the transmitter and the receiver having identical MQW structures are monolithically integrated on a tiny GaN chip by using the same fabrication process flow. Environmental temperature change leads to thermal deformation in the Al reflector, which reflects the transmitted light back with a light pulse. The reflected light is coupled into the guided POF again and sensed by the on-chip receiver. Finally, the temperature information is read out as electrical signals. When the ambient temperature changes from 20.1°C to 100°C, the optically induced electrical signal decreases from -3.04 µA to -3.13 µA. The results suggest that the monolithically integrated GaN device offers a promising option for optoelectronic temperature sensing systems.