A ballistic graphene superconducting microwave circuit

Superconducting Cavity-Based Sensing of Band Gaps in 2D Materials

The superconducting coplanar waveguide (SCPW) cavity plays an essential role in various areas like superconducting qubits, parametric amplifiers, radiation detectors, and studying magnon-photon and photon-phonon coupling. Despite its wide-ranging applications, the use of SCPW cavities to study various van der Waals 2D materials has been relatively unexplored. The resonant modes of the SCPW cavity exquisitely sense the dielectric environment. In this work, we measure the charge compressibility of bilayer graphene coupled to a half-wavelength SCPW cavity. Our approach provides a means to detect subtle changes in the capacitance of the bilayer graphene heterostructure, which depends on the compressibility of bilayer graphene, manifesting as shifts in the resonant frequency of the cavity. This method holds promise for exploring a wide class of van der Waals 2D materials, including transition metal dichalcogenides (TMDs) and their moiré, where DC transport measurement is challenging.

The Roadmap of 2D Materials and Devices Toward Chips

Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.

Enhanced Mobility in Suspended Chemical Vapor-Deposited Graphene Field-Effect Devices in Ambient Conditions

High-field-effect mobility and the two-dimensional nature of graphene films make it an interesting material for developing sensing applications with high sensitivity and low power consumption. The chemical vapor deposition process allows for producing high-quality graphene films in a scalable manner. Considering the significant impact of the underlying substrate on the graphene device performance, methods to enhance the field-effect mobility are highly desired. This work demonstrates a simplified fabrication process to develop suspended, two-terminal chemical vapor deposition (CVD) graphene devices with enhanced field-effect mobility operating at room temperature. Enhanced hole field-effect mobility of up to ∼4.8 × 104 cm2/Vs and average hole mobility >1 × 104 cm2/Vs across all of the devices is demonstrated. A gradual increase in the width of the graphene device resulted in the increase of the full width at half-maximum (FWHM) of field-effect characteristics and a decrease in the field-effect mobility. Our work presents a simplified fabrication approach to realize high-mobility suspended CVD graphene devices, beneficial for developing CVD graphene-related applications.

Nonreciprocal Supercurrents in a Field-Free Graphene Josephson Triode

Superconducting diodes are proposed nonreciprocal circuit elements that should exhibit nondissipative transport in one direction while being resistive in the opposite direction. Multiple examples of such devices have emerged in the past couple of years; however, their efficiency is typically limited, and most of them require a magnetic field to function. Here we present a device that achieves efficiencies approaching 100% while operating at zero field. Our samples consist of a network of three graphene Josephson junctions linked by a common superconducting island, to which we refer as a Josephson triode. The three-terminal nature of the device inherently breaks the inversion symmetry, and the control current applied to one of the contacts breaks the time-reversal symmetry. The triode's utility is demonstrated by rectifying a small (nA scale amplitude) applied square wave. We speculate that devices of this type could be realistically employed in the modern quantum circuits.

Hot Carrier Thermalization and Josephson Inductance Thermometry in a Graphene-Based Microwave Circuit

Due to its exceptional electronic and thermal properties, graphene is a key material for bolometry, calorimetry, and photon detection. However, despite graphene's relatively simple electronic structure, the physical processes responsible for the heat transport from the electrons to the lattice are experimentally still elusive. Here, we measure the thermal response of low-disorder graphene encapsulated in hexagonal boron nitride by integrating it within a multiterminal superconducting microwave resonator. The device geometry allows us to simultaneously apply Joule heat power to the graphene flake while performing calibrated readout of the electron temperature. We probe the thermalization rates of both electrons and holes with high precision and observe a thermalization scaling exponent not consistent with cooling through the graphene bulk and argue that instead it can be attributed to processes at the graphene-aluminum interface. Our technique provides new insights into the thermalization pathways essential for the next-generation graphene thermal detectors.

Graphene-based terahertz reconfigurable printed ridge gap waveguide structure

Graphene-based microwave devices have enabled reconfigurability, thus paving the way to the realization of flexible wireless terahertz systems with featured performances. Despite great progress in the development of graphene-based terahertz devices in the literature, high insertion loss and wide tunable range are still significant challenges at such high frequencies. In this work, we introduce the use of graphene to implement a reconfigurable printed ridge gap waveguide (RPRGW) structure over the terahertz frequency range for the first time. This guiding structure is suitable for both millimeter and terahertz wave applications due to its supporting quasi-TEM mode, which exhibits low dispersion compared to other traditional guiding structures. The presented solution is featured with low loss as the signal propagates in a lossless air gap, which is separated from the lossy graphene elements responsible for the reconfigurable behavior. In addition, this guiding structure is deployed to implement a tunable RPPGW power divider as an application example for the proposed structure.

A gate-tunable graphene Josephson parametric amplifier

With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to advances in microwave quantum optics¹. Of these elements, quantum-limited parametric amplifiers^2-4 are essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of μeV)^5,6. They are also used to generate non-classical states of light that can be a resource for quantum enhanced detection⁷. Superconducting parametric amplifiers, such as quantum bits, typically use a Josephson junction as a source of magnetically tunable and dissipation-free non-linearity. In recent years, efforts have been made to introduce semiconductor weak links as electrically tunable non-linear elements, with demonstrations of microwave resonators and quantum bits using semiconductor nanowires^8,9, a two-dimensional electron gas¹⁰, carbon nanotubes¹¹ and graphene^12,13. However, given the challenge of balancing non-linearity, dissipation, participation and energy scale, parametric amplifiers have not yet been implemented with a semiconductor weak link. Here, we demonstrate a parametric amplifier leveraging a graphene Josephson junction and show that its working frequency is widely tunable with a gate voltage. We report gain exceeding 20 dB and noise performance close to the standard quantum limit. Our results expand the toolset for electrically tunable superconducting quantum circuits. They also offer opportunities for the development of quantum technologies such as quantum computing, quantum sensing and for fundamental science¹⁴.

Quantum-noise-limited microwave amplification using a graphene Josephson junction

Josephson junctions (JJs) and their tunable properties, including their nonlinearities, play an important role in superconducting qubits and amplifiers. JJs together with the circuit quantum electrodynamics architecture form many key components of quantum information processing¹. In quantum circuits, low-noise amplification of feeble microwave signals is essential, and Josephson parametric amplifiers (JPAs)² are the widely used devices. The existing JPAs are based on Al-AlO_x-Al tunnel junctions realized in a superconducting quantum interference device geometry, where magnetic flux is the knob for tuning the frequency. Recent experimental realizations of two-dimensional (2D) van der Waals JJs^3-5 provide an opportunity to implement various circuit quantum electrodynamics devices^6-8 with the added advantage of tuning the junction properties and the operating point using a gate potential. While other components of a possible 2D van der Waals circuit quantum electrodynamics architecture have been demonstrated, a quantum-noise-limited amplifier, an essential component, has not been realized, to the best of our knowledge. Here we implement a quantum-noise-limited JPA using a graphene JJ, that has a linear resonance gate tunability of 3.5 GHz. We report 24 dB amplification with 10 MHz bandwidth and -130 dBm saturation power, a performance on par with the best single-junction JPAs^2,9. Importantly, our gate-tunable JPA works in the quantum-limited noise regime, which makes it an attractive option for highly sensitive signal processing. Our work has implications for novel bolometers; the low heat capacity of graphene together with JJ nonlinearity can result in an extremely sensitive microwave bolometer embedded inside a quantum-noise-limited amplifier. In general, this work will open up the exploration of scalable device architectures of 2D van der Waals materials by integrating a sensor with the quantum amplifier.

Recent Progress in 1D Contacts for 2D-Material-Based Devices

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R_C ), thereby substantially lowering the electronic mobility of 2DM-based devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high-density transistor integration independent of scaling, and the fabrication of double-gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large-scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.

Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits

The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with (Bi_0.06Sb_0.94)₂Te₃ topological insulator (TI) JJs using ultrahigh vacuum fabrication techniques. Microwave losses on our substrates, which host monolithically integrated hardmasks used for the selective area growth of TI nanostructures, imply microsecond limits to relaxation times and, thus, their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.

Hexagonal boron nitride as a low-loss dielectric for superconducting quantum circuits and qubits

Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. Here we study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe₂-hBN-NbSe₂ heterostructures integrated into superconducting circuits. The extracted microwave loss tangent of hBN is bounded to be at most in the mid-10^-6 range in the low-temperature, single-photon regime. We integrate hBN PPCs with aluminium Josephson junctions to realize transmon qubits with coherence times reaching 25 μs, consistent with the hBN loss tangent inferred from resonator measurements. The hBN PPC reduces the qubit feature size by approximately two orders of magnitude compared with conventional all-aluminium coplanar transmons. Our results establish hBN as a promising dielectric for building high-coherence quantum circuits with substantially reduced footprint and with a high energy participation that helps to reduce unwanted qubit cross-talk.

Making high-quality quantum microwave devices with van der Waals superconductors

Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe₂that achieve a quality factorQ> 10⁵. This value sets an upper bound that corresponds to a resistance of⩽192μΩwhen considering the additional loss introduced by integrating NbSe₂into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.

Miniaturizing Transmon Qubits Using van der Waals Materials

Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, recently demonstrated in superconducting qubit processors. However, the capacitor electrodes that comprise these qubits must be large in order to avoid lossy dielectrics. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of van der Waals (vdW) materials to reduce the qubit area by >1000 times while preserving the capacitance while maintaining quantum coherence. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide and insulating hexagonal boron nitride. We measure a vdW transmon T₁ relaxation time of 1.06 μs, demonstrating a path to achieve high-qubit-density quantum processors with long coherence times, and the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.

Critical current fluctuations in graphene Josephson junctions

We have studied 1/f noise in critical current [Formula: see text] in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching supercurrent with hysteresis at Dirac point amounts to [Formula: see text] nA. The low frequency noise in the superconducting state is measured by tracking the variation in magnitude and phase of a reflection carrier signal [Formula: see text] at 600-650 MHz. We find 1/f critical current fluctuations on the order of [Formula: see text] per unit band at 1 Hz. The noise power spectrum of critical current fluctuations [Formula: see text] measured near the Dirac point at large, sub-critical rf-carrier amplitudes obeys the law [Formula: see text] where [Formula: see text] and [Formula: see text] at [Formula: see text] Hz. Our results point towards significant fluctuations in [Formula: see text] originating from variation of the proximity induced gap in the graphene junction.

Abrikosov vortex corrections to effective magnetic field enhancement in epitaxial graphene

Here, we report the effects of enhanced magnetic fields resulting from type-II superconducting NbTiN slabs adjacent to narrow Hall bar devices fabricated from epitaxial graphene. Observed changes in the magnetoresistances were found to have minimal contributions from device inhomogeneities, magnet hysteresis, electron density variations along the devices, and transient phenomena. We hypothesize that Abrikosov vortices, present in type-II superconductors, contribute to these observations. By determining the London penetration depth, coupled with elements of Ginzburg-Landau theory, one can approximate an upper bound on the effect that vortex densities at low fields (< 1T) have on the reported observations. These analyses offer insights into device fabrication and how to utilize the Meissner effect for any low-field and low-temperature applications using superconductors.

Ballistic Graphene Cooper Pair Splitter

We report an experimental study of a Cooper pair splitter based on ballistic graphene multiterminal junctions. In a two transverse junction geometry, namely the superconductor-graphene-superconductor and the normal metal-graphene-normal metal, we observe clear signatures of Cooper pair splitting in the local as well as nonlocal electronic transport measurements. Our experimental data can be very well described by our beam splitter model. These results open up possibilities to design new entangled state detection experiments using ballistic Cooper pair splitters.

Controlled dc Monitoring of a Superconducting Qubit

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor. Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the field-effect transistor to the monitoring circuit allows the influence of weak-to-strong dc monitoring of a "live" qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.

Local Josephson vortex generation and manipulation with a Magnetic Force Microscope

Josephson vortices play an essential role in superconducting quantum electronics devices. Often seen as purely conceptual topological objects, 2π-phase singularities, their observation and manipulation are challenging. Here we show that in Superconductor-Normal metal-Superconductor lateral junctions Josephson vortices have a peculiar magnetic fingerprint that we reveal in Magnetic Force Microscopy (MFM) experiments. Based on this discovery, we demonstrate the possibility of the Josephson vortex generation and manipulation by the magnetic tip of a MFM, thus paving a way for the remote inspection and control of individual nano-components of superconducting quantum circuits.

Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures

Quantum coherence and control is foundational to the science and engineering of quantum systems^1,2. In van der Waals materials, the collective coherent behaviour of carriers has been probed successfully by transport measurements^3-6. However, temporal coherence and control, as exemplified by manipulating a single quantum degree of freedom, remains to be verified. Here we demonstrate such coherence and control of a superconducting circuit incorporating graphene-based Josephson junctions. Furthermore, we show that this device can be operated as a voltage-tunable transmon qubit^7-9, whose spectrum reflects the electronic properties of massless Dirac fermions travelling ballistically^4,5. In addition to the potential for advancing extensible quantum computing technology, our results represent a new approach to studying van der Waals materials using microwave photons in coherent quantum circuits.