Chemical bonding origin of the unexpected isotropic physical properties in thermoelectric Mg3Sb2 and related materials

High throughput screening of semiconductors with low lattice thermal transport induced by long-range interactions

Semiconductors with long-range interactions (LRI) due to resonant bonding exhibit delocalized electronic states and low lattice thermal conductivity, contributing to the efficiency of heat-to-electricity conversion. Here, we build a descriptor for high-throughput screening of LRI materials from the second-order interaction force constants. We identify 75 semiconducting candidates from the binary compounds in the MatHub-3d database that contain LRI. By analyzing the bonding properties of LRI atoms, we classify LRI in materials into two categories: type I and type II. In the structural unit of type I LRI, the atoms have strong bond connections, while a weak bond exists between the two groups in the structural unit of type II LRI. We have identified atypical type I LRI formed by Sb-Sb and Mg-Mg pairs in the emerging thermoelectric material Mg3Sb2, resulting in the softening of TA1 phonons and large anharmonicity. For type II LRI, the LRI of Ge-Ge and Se-Se pairs in R3m-GeSe can cross different layers. Moreover, we observe a combination of type II LRI and rattling effect in BaSe2 to restrict thermal transport. This work is of great significance for understanding the relationship between LRI and thermal transport properties, and for designing new LRI-induced low lattice thermal conductivity materials.

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.

Strained Lamellar Structures Leading to Improved Thermoelectric Performance in Mg3Sb1.5Bi0.5

Mg3Sb2-xBix solid-solutions represent an important class of thermoelectric (TE) materials due to their high efficiency and variable operating temperature range. Of particular significance for midtemperature applications is the Mg3Sb1.5Bi0.5 composition whose superior thermoelectric (TE) performance is attributed to the complex conduction band edge in conjunction with alloy dominated phonon scattering. In this work, we show that microstructure also plays a significant role in lowering the lattice thermal conductivity which in turn affects the overall TE performance (change in peak zT values between 1.1 and 1.4 have been observed). Temperature dependent TE properties of Mg3+xSb1.5Bi0.5 compositions with varying nominal Mg content (x = 0.2, 0.3, 0.4) have been studied. A marked reduction of the lattice thermal conductivity (κL) is observed in compositions with low nominal Mg content (x = 0.2), which is due to the presence of lamellar structures within the grains. These lamellar regions are isostructural to the matrix with a low misfit angle and represent compositional fluctuations in the Bi to Sb ratio. Both the size (200 nm-500 nm) and the interfacial strain contribute to the enhanced phonon scattering. A quantitative estimate of κL reduction due to these structures have been carried out using a mean free path (MFP) spectrum analysis which reveal a good match with experiments at room temperature. Further, the electrical properties are not influenced by these lamellar structures as observed from the similar power-factor (S2σ) and weighted mobilities in all of the compositions. This is due to their similar orientation to the adjacent matrix region. Thus, the zT parameter in the various compositions with similar carrier concentration can be significantly altered (∼25%) by adjusting the nominal Mg content. The results demonstrate that preferential phonon scattering by microstructure modification can be a new route for property improvement in Mg3+xSb2-yBiy solid-solutions.

Chemical Bonding Tuned Lattice Anharmonicity Leads to a High Thermoelectric Performance in Cubic AgSnSbTe3

Comprehension of chemical bonding and its intertwined relation with charge carriers and heat propagation through a crystal lattice is imperative to design compounds for thermoelectric energy conversion. Here, we report the synthesis of large single crystal of new p-type cubic AgSnSbTe3 which shows an innately ultra-low lattice thermal conductivity (κlat ) of 0.47-0.27 Wm-1  K-1 and a high electrical conductivity (1238 - 800 S cm-1 ) in the temperature range 294-723 K. We investigated the origin of the low κlat by analysing the nature of the chemical bonding and its crystal structure. The interaction between Sn(5 s)/Ag(4d) and Te(5p) orbitals was found to generate antibonding states just below the Fermi level in the electronic band structure, resulting in a softening of the lattice in AgSnSbTe3 . Furthermore, the compound exhibits metavalent bonding which provides highly polarizable bonds with a strong lattice anharmonicity while maintaining the superior electrical conductivity. The electronic band structure exhibits nearly degenerate valence-band maxima that help to achieve a high Seebeck coefficient throughout the measured temperature range and, as a result, the maximum thermoelectric figure of merit reaches to ≈1.2 at 661 K in pristine single crystal of AgSnSbTe3 .

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Mg₃ (Sb,Bi)₂ is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (V_Mg ) in Mg₃ (Sb,Bi)₂ . This study proposes an approach to mitigating the negative scattering effect of V_Mg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and C_s -corrected scanning transmission electron microscopy analyses indicated that the V_Mg tends to coalesce due to the introduced Bi vacancies (V_Bi ). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic V_Mg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg₃ (Sb,Bi)₂ by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg₃ (Sb,Bi)₂ as an emerging thermoelectric material.

Realizing Excellent Structural and Thermoelectric Performance in Mg3Sb2-Based Alloys by Manipulating Mg Intrinsic Migration Kinetics with Interstitial Ni Doping

N-type Mg₃Sb₂ is attracting increasing focus for its outstanding room-temperature (RT) thermoelectric (TE) performance; however, achieving reliable n-type conduction remains challenging due to negatively charged Mg vacancies. Doping with compensation charges is generally used but does not fundamentally resolve the high intrinsic activity and easy formation of Mg vacancies. Herein, a robust structural and thermoelectric performance is obtained by manipulating Mg intrinsic migration activity by precisely incorporating Ni at the interstitial site. Density functional theory (DFT) indicates that a strong performance originates from a significant thermodynamic preference for Ni occupying the interstitial site across the complete Mg-poor to -rich window, which dramatically promotes the Mg migration barrier and kinetically immobilizes Mg. As a result, the detrimental vacancy-associated ionized scattering is eliminated with a leading room-temperature ZT up to 0.85. This work reveals that interstitial occupation in Mg₃Sb₂-based materials is a novel approach promoting both structural and thermoelectric performance.

Elastic Moduli: a Tool for Understanding Chemical Bonding and Thermal Transport in Thermoelectric Materials

The elastic behavior of a material can be a powerful tool to decipher thermal transport. In thermoelectrics, measuring the elastic moduli-directly tied to sound velocity-is critical to understand trends in lattice thermal conductivity, as well as study bond anharmonicity and phase transitions, given the sensitivity of elastic moduli to the chemical bonding. In this review, we introduce the basics of elasticity and explain the origin of high-temperature lattice softening from a bonding perspective. We then review elasticity data throughout classes of thermoelectrics, and explore trends in sound velocity, anharmonicity, and thermal conductivity. We reveal how experimental sound velocities can improve the accuracy of common thermal conductivity models and present a critical discussion of Grüneisen parameter estimates from elastic moduli. Readers will be equipped with tools to leverage elasticity measurements or calculations to accurately interpret thermal transport trends.

Temperature-Driven Twin Structure Formation and Electronic Structure of Epitaxially Grown Mg3Sb2 Films on Mismatched Substrates

Mg₃Sb₂-based compounds are one type of important room-temperature thermoelectric materials and the appropriate candidate of type-II nodal line semimetals. In Mg₃Sb₂-based films, compelling research topics such as dimensionality reduction and topological states rely on the controllable preparation of films with high crystallinity, which remains a big challenge. In this work, high quality Mg₃Sb₂ films are successfully grown on mismatched substrates of sapphire (000l), while the temperature-driven twin structure evolution and characteristics of the electronic structure are revealed in the as-grown Mg₃Sb₂ films by in situ and ex situ measurements. The transition of layer-to-island growth of Mg₃Sb₂ films is kinetically controlled by increasing the substrate temperature (T_sub), which is accompanied with the rational manipulation of twin structure and epitaxial strains. Twin-free structure could be acquired in the Mg₃Sb₂ film grown at a low T_sub of 573 K, while the formation of twin structure is significantly promoted by elevating the T_sub and annealing, in close relation to the processes of strain relaxation and enhanced mass transfer. Measurements of scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) elucidate the intrinsic p-type conduction of Mg₃Sb₂ films and a bulk band gap of ~0.89 eV, and a prominent Fermi level downshift of ~0.2 eV could be achieved by controlling the film growth parameters. As elucidated in this work, the effective manipulation of the epitaxial strains, twin structure and Fermi level is instructive and beneficial for the further exploration and optimization of thermoelectric and topological properties of Mg₃Sb₂-based films.

Revealing the Defect-Dominated Electron Scattering in Mg3Sb2-Based Thermoelectric Materials

The thermoelectric parameters are essentially governed by electron and phonon transport. Since the carrier scattering mechanism plays a decisive role in electron transport, it is of great significance for the electrical properties of thermoelectric materials. As a typical example, the defect-dominated carrier scattering mechanism can significantly impact the room-temperature electron mobility of n-type Mg3Sb2-based materials. However, the origin of such a defect scattering mechanism is still controversial. Herein, the existence of the Mg vacancies and Mg interstitials has been identified by synchrotron powder X-ray diffraction. The relationship among the point defects, chemical compositions, and synthesis conditions in Mg3Sb2-based materials has been revealed. By further introducing the point defects without affecting the grain size via neutron irradiation, the thermally activated electrical conductivity can be reproduced. Our results demonstrate that the point defects scattering of electrons is important in the n-type Mg3Sb2-based materials.

Open-Bandgap Graphene-Based Field-Effect Transistor Using Oligo(phenylene-ethynylene) Interfacial Chemistry

Organic interfacial compounds (OICs) are required as linkers for the highly stable and efficient immobilization of bioprobes in nanobiosensors using 2D nanomaterials such as graphene. Herein, we first demonstrated the fabrication of a field-effect transistor (FET) via a microelectromechanical system process after covalent functionalization on large-scale graphene by introducing oligo(phenylene-ethynylene)amine (OPE). OPE was compared to various OICs by density functional theory simulations and was confirmed to have a higher binding energy with graphene and a lower band gap than other OICs. OPE can improve the immobilization efficiency of a bioprobe by forming a self-assembly monolayer via anion-based reaction. Using this technology, Magainin I-conjugated OGMFET (MOGMFET) showed a high sensitivity, high selectivity, with a limit of detection of 10⁰  cfu mL^-1 . These results indicate that the OPE OIC can be applied for stable and comfortable interfacing technology for biosensor fabrication.

Insight into the Strategies for Improving the Thermal Stability of Efficient N-Type Mg3Sb2-Based Thermoelectric Materials

N-type Mg₃(Sb,Bi)₂ compounds have recently been demonstrated as promising low-cost efficient thermoelectric materials in low and intermediate temperature ranges; however, the thermal stability of this type of material still poses a great challenge for practical applications. In this work, we conduct a systematic investigation of the thermal stability of several high-performing n-type Mg₃(Sb,Bi)₂-based thermoelectric materials in both bulk and powdered forms using X-ray and neutron diffraction. It is found that the bulk sample exhibits a much slower degradation rate based on the evolution of the secondary Bi/Sb phase in comparison with the powdered sample, revealing a clear kinetic effect. Moreover, the surface of the bulk sample will gradually become Mg-poor or Bi-rich even at room temperature when exposed to air for a long time, highlighting the importance of surface encapsulation for applications. An underlying mechanism based on the Mg loss/migration is proposed to account for the property degradation. Importantly, to address the property degradation, we discuss possible solutions and propose Mg-vapor annealing as an effective approach to enhance thermal stability by suppressing the Mg loss/migration through saturating grains and grain boundaries with elemental Mg. We expect a combination of the Mg-vapor annealing and surface coating to further improve the long-term thermal stability. This work sheds light on the strategies for enhancing the long-term stability of n-type Mg₃Sb₂-based thermoelectrics for practical applications.

Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics

Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κ_L). A plethora of strategies have been developed to lower κ_L in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κ_L and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κ_L in order to realize high-performance thermoelectric materials.

X‐ray Electron Density Study of the Chemical Bonding Origin of Glass Formation in Metal–Organic Frameworks**

Glass‐forming metal–organic frameworks (MOFs) have novel applications, but the origin of their peculiar melting behavior is unclear. Here, we report synchrotron X‐ray diffraction electron densities of two zeolitic imidazolate frameworks (ZIFs), the glass‐forming Zn‐ZIF‐zni and the isostructural thermally decomposing Co‐ZIF‐zni. Electron density analysis shows that the Zn−N bonds are more ionic than the Co−N bonds, which have distinct covalent features. Variable‐temperature Raman spectra reveal the onset of significant imidazolate bond weakening in Co‐ZIF‐zni above 673 K. Melting can be controlled by tuning the metal–ligand and imidazole bonding strength as shown from thermal analysis of nine solid‐solution Co_xZn_1−x‐ZIF‐zni (x=0.3 to 0.003) MOFs, and a mere 4 % Co‐doping into Zn‐ZIF‐zni results in thermal decomposition instead of melting. The present findings demonstrate the key role of the metal–ligand bonds and imidazolate bonds in controlling the delicate balance between melting and decomposition processes in this class of ZIF compounds.

Mixed-Valence CsCu4Se3: Large Phonon Anharmonicity Driven by the Hierarchy of the Rigid [(Cu+)4(Se2-)2](Se-) Double Anti-CaF2 Layer and the Soft Cs+ Sublattice

Crystalline solids that exhibit inherently low lattice thermal conductivity (κ_lat) have attracted a great deal of attention because they offer the only independent control for pursuing a high thermoelectric figure of merit (ZT). Herein, we report the successful preparation of CsCu₄Q₃ (Q = S (compound 1), Se (compound 2)) with the aid of a safe and facile boron-chalcogen method. The single-crystal diffraction data confirm the P4/mmm hierarchical structures built up by the mixed-valence [(Cu⁺)₄(Q^2-)₂](Q^-) double anti-CaF₂ layer and the NaCl-type Cs⁺ sublattice involving multiple bonding interactions. The electron-poor compound CsCu₄Q₃ features Cu-Q antibonding states around E_F that facilitates a high σ value of 3100 S/cm in 2 at 323 K. Significantly, the ultralow κ_lat value of 2, 0.20 W/m/K at 650 K (70% lower than that of Cu₂Se), is mainly driven by the vibrational coupling of the rigid double anti-CaF₂ layer and the soft NaCl-type sublattice. The hierarchical structure increases the bond multiplicity, which eventually leads to a large phonon anharmonicity, as evidenced by the effective scattering of the low-lying optical phonons to the heat-carrying acoustic phonons. Consequently, the acoustic phonon frequency in 2 drops sharply from 118 cm^-1 (of Cu₂Se) to 48 cm^-1. In addition, the elastic properties indicate that the hierarchical structure largely inhibits the transverse phonon modes, leading to a sound velocity (1571 m/s) and a Debye temperature (189 K) lower than those of Cu₂Se (2320 m/s; 292 K).

Layered Dion-Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M = Ta/Nb; X = S/Se) with a Narrow Band Gap of ∼1 eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells

Perovskite-perovskite tandem solar cells have bright prospects to improve the power conversion efficiency (PCE) beyond the Shockley-Queisser (SQ) limit of single-junction solar cells. The star lead-based halide perovskites are well-recognized as suitable candidates for the front cell, thanks to their suitable band gap (∼1.8 eV), strong optical absorption, and high certified PCE. However, the toxicity of lead for the front cell and the lack of a narrow band gap (∼1.1 eV) for the rear cell seriously restrict the development of the two-junction tandem cell. To break through this bottleneck, a novel Dion-Jacobson (DJ)-type (n = 2) chalcogenide perovskite CsLaM₂X₇ (M = Ta, Nb; X = S, Se) has been found based on the powerful first-principles and advanced many-body perturbation GW calculations. Their excellent electronic, transport, and optical properties can be summarized as follows. (1) They are stable and environmentally friendly lead-free materials. (2) The direct band gap of CsLaTa₂Se₇ (0.96-1.10 eV) is much smaller than those of lead-based halide perovskites and very suitable for the rear cell in the two-junction tandem cell. (3) The carrier mobility in CsLaTa₂Se₇ reaches 1.6 × 10³ cm² V^-1 s^-1 at room temperature. (4) The absorption coefficients (3-5 × 10⁵ cm^-1) are 1 order higher than that of Si (10⁴ cm^-1). (5) The estimated PCEs of the Cs₂Sb₂Br₈-CsLaTa₂Se₇ tandem cell (33.3%) and the concentrator solar cell (35.8% in 100 suns) are higher than those of the best recorded GaAs-Si tandem cell (32.8%) and the perovskite-perovskite tandem solar cell (24.8%). These energetic results strongly demonstrate that the novel lead-free chalcogenide perovskites CsLaM₂X₇ are good candidates for the rear cell of tandem cells.

Demonstration of valley anisotropy utilized to enhance the thermoelectric power factor

Valley anisotropy is a favorable electronic structure feature that could be utilized for good thermoelectric performance. Here, taking advantage of the single anisotropic Fermi pocket in p-type Mg3Sb2, a feasible strategy utilizing the valley anisotropy to enhance the thermoelectric power factor is demonstrated by synergistic studies on both single crystals and textured polycrystalline samples. Compared to the heavy-band direction, a higher carrier mobility by a factor of 3 is observed along the light-band direction, while the Seebeck coefficient remains similar. Together with lower lattice thermal conductivity, an increased room-temperature zT by a factor of 3.6 is found. Moreover, the first-principles calculations of 66 isostructural Zintl phase compounds are conducted and 9 of them are screened out displaying a pz-orbital-dominated valence band, similar to Mg3Sb2. In this work, we experimentally demonstrate that valley anisotropy is an effective strategy for the enhancement of thermoelectric performance in materials with anisotropic Fermi pockets.

Structural, vibrational and electronic properties of α'-Ga2S3 under compression

We report a joint experimental and theoretical study of the low-pressure phase of α'-Ga₂S₃ under compression. Theoretical ab initio calculations have been compared to X-ray diffraction and Raman scattering measurements under high pressure carried out up to 17.5 and 16.1 GPa, respectively. In addition, we report Raman scattering measurements of α'-Ga₂S₃ at high temperature that have allowed us to study its anharmonic properties. To understand better the compression of this compound, we have evaluated the topological properties of the electron density, the electron localization function, and the electronic properties as a function of pressure. As a result, we shed light on the role of the Ga-S bonds, the van der Waals interactions inside the channels of the crystalline structure, and the single and double lone electron pairs of the sulphur atoms in the anisotropic compression of α'-Ga₂S₃. We found that the structural channels are responsible for the anisotropic properties of α'-Ga₂S₃ and the A'(6) phonon, known as the breathing mode and associated with these channels, exhibits the highest anharmonic behaviour. Finally, we report calculations of the electronic band structure of α'-Ga₂S₃ at different pressures and find a nonlinear pressure behaviour of the direct band gap and a pressure-induced direct-to-indirect band gap crossover that is similar to the behaviour previously reported in other ordered-vacancy compounds, including β-Ga₂Se₃. The importance of the single and, more specially, the double lone electron pairs of sulphur in the pressure dependence of the topmost valence band of α'-Ga₂S₃ is stressed.

Improved Thermoelectric Properties of N-Type Mg3Sb2 through Cation-Site Doping with Gd or Ho

The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg₃Sb₂ thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg₃Sb₂ thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg₃Sb₂ samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg₃Sb₂ samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg_3.5Gd_0.04Sb₂ and Mg_3.5Ho_0.04Sb₂, which are superior to many reported Te-doped Mg₃Sb₂ without alloying with Mg₃Bi₂. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg₃Sb₂ thermoelectric materials.

Chemical Bonding Governs Complex Magnetism in MnPt5P

Subtle changes in chemical bonds may result in dramatic revolutions in magnetic properties in solid-state materials. MnPt₅P, a derivative of the rare-earth-free ferromagnetic MnPt₅As, was discovered and is presented in this work. MnPt₅P was synthesized, and its crystal structure and chemical composition were characterized by X-ray diffraction as well as energy-dispersive X-ray spectroscopy. Accordingly, MnPt₅P crystallizes in the layered tetragonal structure with the space group P4/mmm (No. 123), in which the face-shared Mn@Pt₁₂ polyhedral layers are separated by P layers. In contrast to the ferromagnetism observed in MnPt₅As, the magnetic properties measurements on MnPt₅P show antiferromagnetic ordering occurs at ∼188 K with a strong magnetic anisotropy in and out of the ab-plane. Moreover, a spin-flop transition appears when a high magnetic field is applied. An A-type antiferromagnetic structure was obtained from the analysis of powder neutron diffraction (PND) patterns collected at 150 and 9 K. Calculated electronic structures imply that hybridization of Mn-3d and Pt-5d orbitals is critical for both the structural stability and observed magnetic properties. Semiempirical molecular orbitals calculations on both MnPt₅P and MnPt₅As indicate that the lack of 4p character on the P atoms at the highest occupied molecular orbital (HOMO) in MnPt₅P may cause the different magnetic behavior in MnPt₅P compared to MnPt₅As. The discovery of MnPt₅P, along with our previously reported MnPt₅As, parametrizes the end points of a tunable system to study the chemical bonding which tunes the magnetic ordering from ferromagnetism to antiferromagnetism with the strong spin-orbit coupling (SOC) effect.

Influence of the stacking sequence on layered-chalcogenide properties: first principles investigation of Pb2Bi2Te5

The Pb2Bi2Te5 compound has been reported in the literature with two stacking sequences -Te-Pb-Te-Bi-Te-Bi-Te-Pb-Te- and -Te-Bi-Te-Pb-Te-Pb-Te-Bi-Te- labelled in this work as A and B, respectively. The electronic and the thermoelectric properties of the Pb2Bi2Te5 compound with the 2 different stacking sequences have been determined from a series of first principles calculations using density functional theory (DFT). The related compounds PbTe and Bi2Te3 have also been investigated for comparison. Different exchange-correlation functionals have been tested, without spin-orbit coupling, which has been found to have important effects. The elastic moduli, dielectric constants, Born effective charges, and phonon dispersion within the quasi-harmonic approximation have also been calculated and based on these calculations results, the thermal conductivity has been determined by solving the Boltzmann transport equation. Additionally, the QTAIM theory was employed to explain the differences in the properties of the 2 stackings. The most interesting compound for thermoelectric applications has been found to be Pb2Bi2Te5 with the stacking B sequence. The highest zT values have been found to be 4.02 in the a-axis direction and 2.26 in the c-axis one.

Experimental validation of high thermoelectric performance in RECuZnP2 predicted by high-throughput DFT calculations

Accurate density functional theory calculations of the interrelated properties of thermoelectric materials entail high computational cost, especially as crystal structures increase in complexity and size. New methods involving ab initio scattering and transport (AMSET) and compressive sensing lattice dynamics are used to compute the transport properties of quaternary CaAl₂Si₂-type rare-earth phosphides RECuZnP₂ (RE = Pr, Nd, Er), which were identified to be promising thermoelectrics from high-throughput screening of 20 000 disordered compounds. Experimental measurements of the transport properties agree well with the computed values. Compounds with stiff bulk moduli (>80 GPa) and high speeds of sound (>3500 m s^-1) such as RECuZnP₂ are typically dismissed as thermoelectric materials because they are expected to exhibit high lattice thermal conductivity. However, RECuZnP₂ exhibits not only low electrical resistivity, but also low lattice thermal conductivity (∼1 W m^-1 K^-1). Contrary to prior assumptions, polar-optical phonon scattering was revealed by AMSET to be the primary mechanism limiting the electronic mobility of these compounds, raising questions about existing assumptions of scattering mechanisms in this class of thermoelectric materials. The resulting thermoelectric performance (zT of 0.5 for ErCuZnP₂ at 800 K) is among the best observed in phosphides and can likely be improved with further optimization.

Probing Efficient N-Type Lanthanide Dopants for Mg3Sb2 Thermoelectrics

The recent discovery of n-type Mg3Sb2 thermoelectrics has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here, a systematic computational screening of potential efficient n-type lanthanide dopants is conducted for Mg3Sb2. In addition to La, Ce, Pr, and Tm, it is found that high electron concentration (≳1020 cm-3 at the growth temperature of 900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, which are generally more efficient than other lanthanide dopants and the anion-site dopant Te. Experimentally, Nd and Tm are confirmed as effective n-type dopants for Mg3Sb2 since doping with Nd and Tm shows higher electron concentration and thermoelectric figure of merit zT than doping with Te. Through codoping with Nd (Tm) and Te, simultaneous power factor improvement and thermal conductivity reduction are achieved. As a result, high zT values of ≈1.65 and ≈1.75 at 775 K are obtained in n-type Mg3.5Nd0.04Sb1.97Te0.03 and Mg3.5Tm0.03Sb1.97Te0.03, respectively, which are among the highest values for n-type Mg3Sb2 without alloying with Mg3Bi2. This work sheds light on exploring promising n-type dopants for the design of Mg3Sb2 thermoelectrics.

N-Type Mg3Sb2-x Bi x Alloys as Promising Thermoelectric Materials

N-type Mg₃Sb_2-x Bi _x alloys have been extensively studied in recent years due to their significantly enhanced thermoelectric figure of merit (zT), thus promoting them as potential candidates for waste heat recovery and cooling applications. In this review, the effects resulting from alloying Mg₃Bi₂ with Mg₃Sb₂, including narrowed bandgap, decreased effective mass, and increased carrier mobility, are summarized. Subsequently, defect-controlled electrical properties in n-type Mg₃Sb_2-x Bi _x are revealed. On one hand, manipulation of intrinsic and extrinsic defects can achieve optimal carrier concentration. On the other hand, Mg vacancies dominate carrier-scattering mechanisms (ionized impurity scattering and grain boundary scattering). Both aspects are discussed for Mg₃Sb_2-x Bi _x thermoelectric materials. Finally, we review the present status of, and future outlook for, these materials in power generation and cooling applications.

High-Performance Mg3Sb2-x Bi x Thermoelectrics: Progress and Perspective

Since the first successful implementation of n-type doping, low-cost Mg₃Sb_2-x Bi _x alloys have been rapidly developed as excellent thermoelectric materials in recent years. An average figure of merit zT above unity over the temperature range 300-700 K makes this new system become a promising alternative to the commercially used n-type Bi₂Te_3-x Se _x alloys for either refrigeration or low-grade heat power generation near room temperature. In this review, with the structure-property-application relationship as the mainline, we first discuss how the crystallographic, electronic, and phononic structures lay the foundation of the high thermoelectric performance. Then, optimization strategies, including the physical aspects of band engineering with Sb/Bi alloying and carrier scattering mechanism with grain boundary modification and the chemical aspects of Mg defects and aliovalent doping, are extensively reviewed. Mainstream directions targeting the improvement of zT near room temperature are outlined. Finally, device applications and related engineering issues are discussed. We hope this review could help to promote the understanding and future developments of low-cost Mg₃Sb_2-x Bi _x alloys for practical thermoelectric applications.

Chemical Bonding in Colossal Thermopower FeSb2

FeSb₂ exhibits a colossal Seebeck coefficient ( S ) and a record-breaking high thermoelectric power factor. It also has an atypical shift from diamagnetism to paramagnetism with increasing temperature, and the fine details of its electron correlation effects have been widely discussed. The extraordinary physical properties must be rooted in the nature of the chemical bonding, and indeed, the chemical bonding in this archetypical marcasite structure has been heavily debated on a theoretical basis since the 1960s. The two prevalent models for describing the bonding interactions in FeSb₂ are based on either ligand-field stabilization of Fe or a network structure of Sb hosting Fe ions. However, neither model can account for the observed properties of FeSb₂ . Herein, an experimental electron density study is reported, which is based on analysis of synchrotron X-ray diffraction data measured at 15 K on a minute single crystal to limit systematic errors. The analysis is supplemented with density functional theory calculations in the experimental geometry. The experimental data are at variance with both the additional single-electron Sb-Sb bond implied by the covalent model, and the large formal charge and expected d-orbital splitting advocated by the ionic model. The structure is best described as an extended covalent network in agreement with expectations based on electronegativity differences.

Realizing a High ZT of 1.6 in N-Type Mg3Sb2-Based Zintl Compounds through Mn and Se Codoping

Mg₃Sb₂-based compounds by virtue of nontoxicity and low-cost have become a promising class of candidates for midtemperature thermoelectric power generation. Here, we successfully fabricated n-type Mg₃Sb₂-based materials using an inexpensive and efficient approach of one-step ball milling and spark plasma sintering, and demonstrate that a complementary and favorable effect of multiple elements coalloying/-doping leads to an excellent thermoelectric performance. The intrinsic p-type conducting behavior for Mg₃Sb₂ could be changed to n-type through Bi and Se coalloying on Sb sublattices with excess Mg, resulting from the suppression of Mg vacancies and the formation of Mg interstitial. Furthermore, Mn doping on Mg sublattices could soften the chemical bonds, leading to the increase of carrier mobility and concentration simultaneously. Additionally, multielement coalloying/-doping could significantly increase the lattice disorder, which undoubtedly strengthens the phonon scattering and readily results in a suppressed lattice thermal conductivity. As a result, a highest ZT value of 1.6 at 723 K and an average ZT value up to 1.1 were obtained in the temperature range of 323-723 K in the Mg_3.18Mn_0.02Sb_1.5Bi_0.49Se_0.01 sample, which is one of the highest values among the Te free Mg₃Sb₂. This work could give guidance for improving the thermoelectric performance of Zintl phase materials or even others using the multielement codoping/-alloying strategy.

Expression and interactions of stereochemically active lone pairs and their relation to structural distortions and thermal conductivity

In chemistry, stereochemically active lone pairs are typically described as an important non-bonding effect, and recent interest has centred on understanding the derived effect of lone pair expression on physical properties such as thermal conductivity. To manipulate such properties, it is essential to understand the conditions that lead to lone pair expression and provide a quantitative chemical description of their identity to allow comparison between systems. Here, density functional theory calculations are used first to establish the presence of stereochemically active lone pairs on antimony in the archetypical chalcogenide MnSb2O4. The lone pairs are formed through a similar mechanism to those in binary post-transition metal compounds in an oxidation state of two less than their main group number [e.g. Pb(II) and Sb(III)], where the degree of orbital interaction (covalency) determines the expression of the lone pair. In MnSb2O4 the Sb lone pairs interact through a void space in the crystal structure, and their their mutual repulsion is minimized by introducing a deflection angle. This angle increases significantly with decreasing Sb-Sb distance introduced by simulating high pressure, thus showing the highly destabilizing nature of the lone pair interactions. Analysis of the chemical bonding in MnSb2O4 shows that it is dominated by polar covalent interactions with significant contributions both from charge accumulation in the bonding regions and from charge transfer. A database search of related ternary chalcogenide structures shows that, for structures with a lone pair (SbX 3 units), the degree of lone pair expression is largely determined by whether the antimony-chalcogen units are connected or not, suggesting a cooperative effect. Isolated SbX 3 units have larger X-Sb-X bond angles and therefore weaker lone pair expression than connected units. Since increased lone pair expression is equivalent to an increased orbital interaction (covalent bonding), which typically leads to increased heat conduction, this can explain the previously established correlation between larger bond angles and lower thermal conductivity. Thus, it appears that for these chalcogenides, lone pair expression and thermal conductivity may be related through the degree of covalency of the system.

Metallic n-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance

Mg₃ (Sb,Bi)₂ alloys have recently been discovered as a competitive alternative to the state-of-the-art n-type Bi₂ (Te,Se)₃ thermoelectric alloys. Previous theoretical studies predict that single crystals Mg₃ (Sb,Bi)₂ can exhibit higher thermoelectric performance near room temperature by eliminating grain boundary resistance. However, the intrinsic Mg defect chemistry makes it challenging to grow n-type Mg₃ (Sb,Bi)₂ single crystals. Here, the first thermoelectric properties of n-type Te-doped Mg₃ Sb₂ single crystals, synthesized by a combination of Sb-flux method and Mg-vapor annealing, is reported. The electrical conductivity and carrier mobility of single crystals exhibit a metallic behavior with a typical T^-1.5 dependence, indicating that phonon scattering dominates the charge carrier transport. The absence of any evidence of ionized impurity scattering in Te-doped Mg₃ Sb₂ single crystals proves that the thermally activated mobility previously observed in polycrystalline materials is caused by grain boundary resistance. Eliminating this grain boundary resistance in the single crystals results in a large enhancement of the weighted mobility and figure of merit zT by more than 100% near room temperature. This work experimentally demonstrates the accurate understanding of charge-carrier scattering is crucial for developing high-performance thermoelectric materials and indicates that single-crystalline Mg₃ (Sb,Bi)₂ solid solutions can exhibit higher zT compared to polycrystalline samples.

Borates or phosphates? That is the question

Chemical nomenclature is perceived to be a closed topic. However, this work shows that the identification of polyanionic groups is still ambiguous and so is the nomenclature for some ternary compounds. Two examples, boron phosphate (BPO₄) and boron arsenate (BAsO₄), which were assigned to the large phosphate and arsenate families, respectively, nearly a century ago, are explored. The analyses show that these two compounds should be renamed phosphorus borate (PBO₄) and arsenic borate (AsBO₄). Beyond epistemology, this has pleasing consequences at several levels for the predictive character of chemistry. It paves the way for future work on the possible syntheses of SbBO₄ and BiBO₄, and it also renders previous structure field maps completely predictive, allowing us to foresee the structure and phase transitions of NbBO₄ and TaBO₄. Overall, this work demonstrates that quantum mechanics calculations can contribute to the improvement of current chemical nomenclature. Such revisitation is necessary to classify compounds and understand their properties, leading to the main final aim of a chemist: predicting new compounds, their structures and their transformations.

Rapid One-Step Synthesis and Compaction of High-Performance n-Type Mg3 Sb2 Thermoelectrics

n-type Mg₃ Sb₂ -based compounds have emerged as a promising class of low-cost thermoelectric materials due to their extraordinary performance at low and intermediate temperatures. However, so far, high thermoelectric performance has merely been reported in n-type Mg₃ Sb₂ -Mg₃ Bi₂ alloys with a large amount of Bi. Moreover, current synthesis methods of n-type Mg₃ Sb₂ bulk thermoelectrics involve multi-step processes that are time- and energy-consuming. Herein, we report a fast and straightforward approach to fabricate n-type Mg₃ Sb₂ thermoelectrics using spark plasma sintering, which combines the synthesis and compaction in one step. Using this method, we achieve a high thermoelectric figure of merit zT of about 0.4-1.5 at 300-725 K in n-type (Sc, Te)-co-doped Mg₃ Sb₂ without alloying with Mg₃ Bi₂ . In comparison with the currently reported synthesis methods, the complexity, process time, and cost of our method are significantly reduced. This work demonstrates a simple, low-cost route for the potential large-scale production of n-type Mg₃ Sb₂ thermoelectrics.

Violation of the T -1 Relationship in the Lattice Thermal Conductivity of Mg3Sb2 with Locally Asymmetric Vibrations

Most crystalline materials follow the guidelines of T ^-1 temperature-dependent lattice thermal conductivity (κ _L ) at elevated temperatures. Here, we observe a weak temperature dependence of κ _L in Mg₃Sb₂, T ^-0.48 from theory and T ^-0.57 from measurements, based on a comprehensive study combining ab initio molecular dynamics calculations and experimental measurements on single crystal Mg₃Sb₂. These results can be understood in terms of the so-called "phonon renormalization" effects due to the strong temperature dependence of the interatomic force constants (IFCs). The increasing temperature leads to the frequency upshifting for those low-frequency phonons dominating heat transport, and more importantly, the phonon-phonon interactions are weakened. In-depth analysis reveals that the phenomenon is closely related to the temperature-induced asymmetric movements of Mg atoms within MgSb₄ tetrahedron. With increasing temperature, these Mg atoms tend to locate at the areas with relatively low force in the force profile, leading to reduced effective 3^rd-order IFCs. The locally asymmetrical atomic movements at elevated temperatures can be further treated as an indicator of temperature-induced variations of IFCs and thus relatively strong phonon renormalization. The present work sheds light on the fundamental origins of anomalous temperature dependence of κ _L in thermoelectrics.

Thermal stability of p-type Ag-doped Mg3Sb2 thermoelectric materials investigated by powder X-ray diffraction

The thermal stability of the p-type Mg2.985Ag0.015Sb2 material with reported good thermoelectric performance is systematically investigated using powder X-ray diffraction (PXRD). Rietveld refinements were performed to extract the quantitative compositional and structural information from PXRD data. For both densified bulk samples and powdered samples of Mg2.985Ag0.015Sb2 studied under vacuum, a secondary phase, Sb, appears upon the first heating process at temperatures above 500 K, but the amount of the Sb phase stabilizes in subsequent thermal cycles. This is consistent with the good repeatability of the electrical resistivity data after the first cycle measurement, and it indicates that the appearance of the Sb phase does not result in structural decomposition or degradation of the thermoelectric properties. To investigate the effect of the Mg vacancy concentration on the formation of the secondary Sb phase, Mg3.5-xAgxSb2 (x = 0 and 0.015) samples with nominal excess Mg were synthesized and characterized. Compared with Mg2.985Ag0.015Sb2, it is found that Mg3.5-xAgxSb2 (x = 0.015) shows no Sb phase appearing for the bulk sample after heat treatment, and only a small amount of Sb emerges in the powdered sample. This reveals that decreasing the Mg deficiency is beneficial for reducing the amount of emerging Sb secondary phase. In addition, there is less Sb appearing in the Ag-doped powder sample of Mg3.5-xAgxSb2 (x = 0.015) than the undoped Mg3.5Sb2 powder sample, indicating that Ag doping at the Mg sites can inhibit the appearance of the Sb phase to some extent. Our work implies that the emergence of the Sb phase is unlikely due to the decomposition of the Mg3Sb2 structure and can be hindered by reducing the Mg deficiency or Ag doping on the Mg sites.