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Yesudhas S, Levitas VI, Lin F, Pandey KK, Smith JS. Unusual plastic strain-induced phase transformation phenomena in silicon. Nat Commun 2024; 15:7054. [PMID: 39147793 PMCID: PMC11327322 DOI: 10.1038/s41467-024-51469-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2024] [Accepted: 08/07/2024] [Indexed: 08/17/2024] Open
Abstract
Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied, whereas strain-induced PTs have never been studied in situ. Here, we reveal in situ various important plastic strain-induced PT phenomena. A correlation between the direct and inverse Hall-Petch effect of particle size on yield strength and pressure for strain-induced PT is predicted theoretically and confirmed experimentally for Si-I→Si-II PT. For 100 nm particles, the strain-induced PT Si-I→Si-II initiates at 0.3 GPa under both compression and shear while it starts at 16.2 GPa under hydrostatic conditions. The Si-I→Si-III PT starts at 0.6 GPa but does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions of micron and 100 nm particles is ∼5-7 GPa higher than in Si-I. For 100 nm Si, a sequence of Si-I → I + II → I + II + III PT is observed, and the coexistence of four phases, Si-I, II, III, and XI, is found under torsion. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II→Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction.
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Affiliation(s)
- Sorb Yesudhas
- Department of Aerospace Engineering, Iowa State University, Ames, Iowa, USA.
| | - Valery I Levitas
- Department of Aerospace Engineering, Iowa State University, Ames, Iowa, USA.
- Department of Mechanical Engineering, Iowa State University, Ames, Iowa, USA.
- Ames National Laboratory, Iowa State University, Ames, Iowa, USA.
| | - Feng Lin
- Department of Aerospace Engineering, Iowa State University, Ames, Iowa, USA
| | - K K Pandey
- High Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai, India
| | - Jesse S Smith
- HPCAT, X-ray Science Division, Argonne National Laboratory, Argonne, Lemont, Illinois, USA
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2
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Wang H, Li Z, Sun K, Tao M, Yao G, Zhu H, Wang J. Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates. J Chem Phys 2023; 159:214704. [PMID: 38038204 DOI: 10.1063/5.0174015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Accepted: 11/07/2023] [Indexed: 12/02/2023] Open
Abstract
We have studied the epitaxial growth of Si thin films on the Cd(0001) surface using low-temperature scanning tunneling microscopy. When deposited at low temperatures (100 K), Si atoms form dendritic islands with triangular shapes, indicating the existence of anisotropic edge diffusion in the process of Si film growth. After annealing to elevated temperatures, the triangular dendritic Si islands become hexagonal compact islands. Moreover, the 2D Si islands located on two different substrate terraces exhibit different heights due to the influence of quantum-well states in Cd(0001) films. Based on high-resolution scanning tunneling microscopy images, it is observed that the first, second, and third Si layers show the pseudomorphic 1 × 1 structure. In particular, the first and second layer islands reveal the opposite triangles, indicating the hexagonal close-packed stacking of Si atoms. These results provide important information for the growth of pristine Si films on metal substrates and the understanding of Si-metal interaction.
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Affiliation(s)
- Hao Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Zuo Li
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Kai Sun
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Minlong Tao
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Gang Yao
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Huaxing Zhu
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Junzhong Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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Yun Q, Ge Y, Shi Z, Liu J, Wang X, Zhang A, Huang B, Yao Y, Luo Q, Zhai L, Ge J, Peng Y, Gong C, Zhao M, Qin Y, Ma C, Wang G, Wa Q, Zhou X, Li Z, Li S, Zhai W, Yang H, Ren Y, Wang Y, Li L, Ruan X, Wu Y, Chen B, Lu Q, Lai Z, He Q, Huang X, Chen Y, Zhang H. Recent Progress on Phase Engineering of Nanomaterials. Chem Rev 2023. [PMID: 37962496 DOI: 10.1021/acs.chemrev.3c00459] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.
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Affiliation(s)
- Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Department of Chemical and Biological Engineering & Energy Institute, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yiyao Ge
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiawei Liu
- Institute of Sustainability for Chemicals, Energy and Environment, Agency for Science, Technology and Research (A*STAR), Singapore, 627833, Singapore
| | - Xixi Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Biao Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Qinxin Luo
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Jingjie Ge
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR
| | - Yongwu Peng
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Chengtao Gong
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Meiting Zhao
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Yutian Qin
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Gang Wang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Qingbo Wa
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Lujing Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xinyang Ruan
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yuxuan Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Bo Chen
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qipeng Lu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), School of Flexible Electronics (SoFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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Zhang L, Tang Y, Khan AR, Hasan MM, Wang P, Yan H, Yildirim T, Torres JF, Neupane GP, Zhang Y, Li Q, Lu Y. 2D Materials and Heterostructures at Extreme Pressure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002697. [PMID: 33344136 PMCID: PMC7740103 DOI: 10.1002/advs.202002697] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Revised: 09/03/2020] [Indexed: 06/02/2023]
Abstract
2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.
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Affiliation(s)
- Linglong Zhang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Yilin Tang
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Ahmed Raza Khan
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Md Mehedi Hasan
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Ping Wang
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Han Yan
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Tanju Yildirim
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Juan Felipe Torres
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Guru Prakash Neupane
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Yupeng Zhang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Quan Li
- International Center for Computational Methods and SoftwareCollege of PhysicsJilin UniversityChangchun130012China
| | - Yuerui Lu
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
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Yan X, Sun W, Wang W, Duchesne PN, Deng X, He J, Kübel C, Li R, Yang D, Ozin GA. Flash Solid-Solid Synthesis of Silicon Oxide Nanorods. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2001435. [PMID: 32755007 DOI: 10.1002/smll.202001435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Revised: 06/15/2020] [Indexed: 06/11/2023]
Abstract
1D silicon-based nanomaterials, renowned for their unique chemical and physical properties, have enabled the development of numerous advanced materials and biomedical technologies. Their production often necessitates complex and expensive equipment, requires hazardous precursors and demanding experimental conditions, and involves lengthy processes. Herein, a flash solid-solid (FSS) process is presented for the synthesis of silicon oxide nanorods completed within seconds. The innovative features of this FSS process include its simplicity, speed, and exclusive use of solid precursors, comprising hydrogen-terminated silicon nanosheets and a metal nitrate catalyst. Advanced electron microscopy and X-ray spectroscopy analyses favor a solid-liquid-solid reaction pathway for the growth of the silicon oxide nanorods with vapor-liquid-solid characteristics.
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Affiliation(s)
- Xiaoliang Yan
- College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, 030024, P. R. China
- Materials Chemistry and Nanochemistry Research Group, Solar Fuels Cluster, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
| | - Wei Sun
- Materials Chemistry and Nanochemistry Research Group, Solar Fuels Cluster, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Wu Wang
- Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT), Hermann-von-Helmholtz-Platz 1, Building 640, Eggenstein-Leopoldshafen, 76344, Germany
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Paul N Duchesne
- Materials Chemistry and Nanochemistry Research Group, Solar Fuels Cluster, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
| | - Xiaonan Deng
- College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, 030024, P. R. China
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Christian Kübel
- Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT), Hermann-von-Helmholtz-Platz 1, Building 640, Eggenstein-Leopoldshafen, 76344, Germany
| | - Ruifeng Li
- College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, 030024, P. R. China
- Key Laboratory of Coal Science and Technology of Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan, Shanxi, 030024, P. R. China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Geoffrey A Ozin
- Materials Chemistry and Nanochemistry Research Group, Solar Fuels Cluster, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
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