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Lee S, Lee S, Jung S, Jung J, Kim D, Lee Y, Seok B, Kim J, Park BG, Šmejkal L, Kang CJ, Kim C. Broken Kramers Degeneracy in Altermagnetic MnTe. PHYSICAL REVIEW LETTERS 2024; 132:036702. [PMID: 38307068 DOI: 10.1103/physrevlett.132.036702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 11/14/2023] [Indexed: 02/04/2024]
Abstract
Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of an altermagnetic phase. By combining high-quality film growth and in situ angle-resolved photoemission spectroscopy, we report the electronic structure of an altermagnetic candidate, α-MnTe. Temperature-dependent study reveals the lifting of Kramers degeneracy accompanied by a magnetic phase transition at T_{N}=267 K with spin splitting of up to 370 meV, providing direct spectroscopic evidence for altermagnetism in MnTe.
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Affiliation(s)
- Suyoung Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Sangjae Lee
- The Research Institute of Basic Sciences, Seoul National University, Seoul 08826, Korea
| | - Saegyeol Jung
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Jiwon Jung
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Yeonjae Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Byeongjun Seok
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Jaeyoung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Byeong Gyu Park
- Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Libor Šmejkal
- Institut für Physik, Johannes Gutenberg Universität Mainz, D-55099 Mainz, Germany
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic
| | - Chang-Jong Kang
- Department of Physics, Chungnam National University, Daejeon 34134, Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
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Butcher MW, Tanatar MA, Nevidomskyy AH. Anisotropic Melting of Frustrated Ising Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 130:166701. [PMID: 37154645 DOI: 10.1103/physrevlett.130.166701] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 05/23/2022] [Accepted: 03/02/2023] [Indexed: 05/10/2023]
Abstract
Magnetic frustrations and dimensionality play an important role in determining the nature of the magnetic long-range order and how it melts at temperatures above the ordering transition T_{N}. In this Letter, we use large-scale Monte Carlo simulations to study these phenomena in a class of frustrated Ising spin models in two spatial dimensions. We find that the melting of the magnetic long-range order into an isotropic gaslike paramagnet proceeds via an intermediate stage where the classical spins remain anisotropically correlated. This correlated paramagnet exists in a temperature range T_{N}<T<T^{*}, whose width increases as magnetic frustrations grow. This intermediate phase is typically characterized by short-range correlations; however, the two-dimensional nature of the model allows for an additional exotic feature-formation of an incommensurate liquidlike phase with algebraically decaying spin correlations. The two-stage melting of magnetic order is generic and pertinent to many frustrated quasi-2D magnets with large (essentially classical) spins.
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Affiliation(s)
- Matthew W Butcher
- Department of Physics and Astronomy, Rice University, Houston Texas 77005, USA
| | - Makariy A Tanatar
- Ames National Laboratory, Ames, Iowa 50011, USA
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA
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Dong T, Zhang SJ, Wang NL. Recent Development of Ultrafast Optical Characterizations for Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2110068. [PMID: 35853841 DOI: 10.1002/adma.202110068] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2021] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
The advent of intense ultrashort optical pulses spanning a frequency range from terahertz to the visible has opened a new era in the experimental investigation and manipulation of quantum materials. The generation of strong optical field in an ultrashort time scale enables the steering of quantum materials nonadiabatically, inducing novel phenomenon or creating new phases which may not have an equilibrium counterpart. Ultrafast time-resolved optical techniques have provided rich information and played an important role in characterization of the nonequilibrium and nonlinear properties of solid systems. Here, some of the recent progress of ultrafast optical techniques and their applications to the detection and manipulation of physical properties in selected quantum materials are reviewed. Specifically, the new development in the detection of the Higgs mode and photoinduced nonequilibrium response in the study of superconductors by time-resolved terahertz spectroscopy are discussed.
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Affiliation(s)
- Tao Dong
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Si-Jie Zhang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Nan-Lin Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Beijing Academy of Quantum Information Sciences, Beijing, 100913, China
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Zhang C, Wang L, Gu Y, Zhang X, Xia X, Jiang S, Huang LL, Fu Y, Liu C, Lin J, Zou X, Su H, Mei JW, Dai JF. Hard ferromagnetic behavior in atomically thin CrSiTe 3 flakes. NANOSCALE 2022; 14:5851-5858. [PMID: 35357377 DOI: 10.1039/d2nr00331g] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The research on two-dimensional (2D) van der Waals (vdW) magnets has promoted the development of ultrahigh-density data storage and nanoscale spintronic devices. However, the soft ferromagnetic behavior in most 2D magnets, which means the absence of remanent magnetization, severely limits their applications in realistic devices. Here, we report a layer-controlled ferromagnetic behavior in atomically thin CrSiTe3 flakes, where a transition from the soft to the hard ferromagnetic state occurs as the thickness of samples decreases down to several nanometers. Phenomenally, in contrast to the negligible hysteresis loop in the bulk counterparts, atomically thin CrSiTe3 shows a rectangular loop with finite magnetization and coercivity as the thickness decreases down to ∼8 nm, indicative of a single-domain and out-of-plane ferromagnetic order. We find that the stray field is weakened with decreasing thickness, which suppresses the formation of the domain wall. In addition, thickness-dependent ferromagnetic properties also reveal a crossover from 3 dimensional to 2 dimensional Ising ferromagnets, accompanied by a drop of the Curie temperature from 33 K for bulk to ∼17 K for the 4 nm sample. Our study paves the way towards exploring and learning much more about atomically thin and layered intrinsic ferromagnets.
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Affiliation(s)
- Cheng Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Le Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Yue Gu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Xi Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xiuquan Xia
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Liang-Long Huang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Ying Fu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Huimin Su
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Jia-Wei Mei
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
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Tzur ME, Neufeld O, Bordo E, Fleischer A, Cohen O. Selection rules in symmetry-broken systems by symmetries in synthetic dimensions. Nat Commun 2022; 13:1312. [PMID: 35288566 PMCID: PMC8921280 DOI: 10.1038/s41467-022-29080-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2021] [Accepted: 02/17/2022] [Indexed: 11/22/2022] Open
Abstract
Selection rules are often considered a hallmark of symmetry. Here, we employ symmetry-breaking degrees of freedom as synthetic dimensions to demonstrate that symmetry-broken systems systematically exhibit a specific class of symmetries and selection rules. These selection rules constrain the scaling of a system’s observables (non-perturbatively) as it transitions from symmetric to symmetry-broken. Specifically, we drive bi-elliptical high harmonic generation (HHG), and observe that the scaling of the HHG spectrum with the pump’s ellipticities is constrained by selection rules corresponding to symmetries in synthetic dimensions. We then show the generality of this phenomenon by analyzing periodically-driven (Floquet) systems subject to two driving fields, tabulating the resulting synthetic symmetries for (2 + 1)D Floquet groups, and deriving the corresponding selection rules for high harmonic generation (HHG) and other phenomena. The presented class of symmetries and selection rules opens routes for ultrafast spectroscopy of phonon-polarization, spin-orbit coupling, symmetry-protected dark bands, and more. The authors introduce the concept of real-synthetic symmetries and use it as a tool to derive selection rules in seemingly symmetry-broken strong-field interactions. These symmetries and their corresponding selection rules can be applied in various systems form harmonic generation to topological photonics
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Ni Z, Zhang H, Hopper DA, Haglund AV, Huang N, Jariwala D, Bassett LC, Mandrus DG, Mele EJ, Kane CL, Wu L. Direct Imaging of Antiferromagnetic Domains and Anomalous Layer-Dependent Mirror Symmetry Breaking in Atomically Thin MnPS_{3}. PHYSICAL REVIEW LETTERS 2021; 127:187201. [PMID: 34767420 DOI: 10.1103/physrevlett.127.187201] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2021] [Revised: 09/02/2021] [Accepted: 10/05/2021] [Indexed: 06/13/2023]
Abstract
We have developed a sensitive cryogenic second-harmonic generation microscopy to study a van der Waals antiferromagnet MnPS_{3}. We find that long-range Néel antiferromagnetic order develops from the bulk crystal down to the bilayer, while it is absent in the monolayer. Before entering the long-range antiferromagnetic ordered phase in all samples, an upturn of the second harmonic generation below 200 K indicates the formation of the short-range order and magnetoelastic coupling. We also directly image the two antiphase (180°) antiferromagnetic domains and thermally induced domain switching down to bilayer. An anomalous mirror symmetry breaking shows up in samples thinner than ten layers for the temperature both above and below the Néel temperature, which indicates a structural change in few-layer samples. Minimal change of the second harmonic generation polar patterns in strain tuning experiments indicate that the symmetry crossover at ten layers is most likely an intrinsic property of MnPS_{3} instead of an extrinsic origin of substrate-induced strain. Our results show that second harmonic generation microscopy is a direct tool for studying antiferromagnetic domains in atomically thin materials, and opens a new way to study two-dimensional antiferromagnets.
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Affiliation(s)
- Zhuoliang Ni
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Huiqin Zhang
- Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - David A Hopper
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Amanda V Haglund
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Nan Huang
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Deep Jariwala
- Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Lee C Bassett
- Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - David G Mandrus
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Eugene J Mele
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Charles L Kane
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Liang Wu
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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Ron A, Chaudhary S, Zhang G, Ning H, Zoghlin E, Wilson SD, Averitt RD, Refael G, Hsieh D. Ultrafast Enhancement of Ferromagnetic Spin Exchange Induced by Ligand-to-Metal Charge Transfer. PHYSICAL REVIEW LETTERS 2020; 125:197203. [PMID: 33216570 DOI: 10.1103/physrevlett.125.197203] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2019] [Revised: 08/17/2020] [Accepted: 10/02/2020] [Indexed: 06/11/2023]
Abstract
We theoretically predict and experimentally demonstrate a nonthermal pathway to optically enhance superexchange interaction energies in a material based on exciting ligand-to-metal charge-transfer transitions, which introduces lower-order virtual hopping contributions that are absent in the ground state. We demonstrate this effect in the layered ferromagnetic insulator CrSiTe_{3} by exciting Te-to-Cr charge-transfer transitions using ultrashort laser pulses and detecting coherent phonon oscillations that are impulsively generated by superexchange enhancement via magneto-elastic coupling. This mechanism kicks in below the temperature scale where short-range in-plane spin correlations begin to develop and disappears when the excitation energy is tuned away from the charge-transfer resonance, consistent with our predictions.
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Affiliation(s)
- A Ron
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv, 69978, Israel
| | - S Chaudhary
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
| | - G Zhang
- Department of Physics, University of California, San Diego, La Jolla, California 92093, USA
| | - H Ning
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
| | - E Zoghlin
- Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - S D Wilson
- Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - R D Averitt
- Department of Physics, University of California, San Diego, La Jolla, California 92093, USA
| | - G Refael
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
| | - D Hsieh
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
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Huang P, Zhang P, Xu S, Wang H, Zhang X, Zhang H. Recent advances in two-dimensional ferromagnetism: materials synthesis, physical properties and device applications. NANOSCALE 2020; 12:2309-2327. [PMID: 31930261 DOI: 10.1039/c9nr08890c] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) ferromagnetism is critical for both scientific investigation and technological development owing to its low-dimensionality that brings in quantization of electronic states as well as free axes for device modulation. However, the scarcity of high-temperature 2D ferromagnets has been the obstacle of many research studies, such as the quantum anomalous Hall effect (QAHE) and thin-film spintronics. Indeed, in the case of the isotropic Heisenberg model with finite-range exchange interactions as an example, low-dimensionality is shown to be contraindicated with ferromagnetism. However, the advantages of low-dimensionality for micro-scale patterning could enhance the Curie temperature (TC) of 2D ferromagnets beyond the TC of bulk materials, opening the door for designing high-temperature ferromagnets in the 2D limit. In this paper, we review the recent advances in the field of 2D ferromagnets, including their material systems, physical properties, and potential device applications.
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Affiliation(s)
- Pu Huang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Peng Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Shaogang Xu
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Huide Wang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Han Zhang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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