Modular coherent photonic-aided payload receiver for communications satellites

Ultra-compact quasi-true time delay for boosting wireless channel capacity

Massive-data connectivity has driven the need for efficient, directed communications through beamforming arrays1-10. Delay elements are critical in any beamforming signal chain. However, these elements impose fundamental limits on size, channel capacity, power efficiency and effective isotropic radiated power11. Although passive phase shifters do not consume DC power, they suffer from narrow bandwidth, poor phase resolution and low power-handling capacity. They introduce a beam squint, in which different frequency components experience different time delays, blurring signals so that they cannot be resolved. This severely limits the data rate of the wireless link, that is, its channel capacity. Although true time delay (TTD) elements12 solve this problem and service a broad bandwidth, they comprise wavelength-scale transmission lines, making them prohibitively area-inefficient for modern semiconductor processes. Here we address this long-standing problem by introducing a quasi-true time delay (Q-TTD) that miniaturizes TTD elements and breaks fundamental channel-capacity limits of these wireless links. We demonstrate this mechanism for a microwave device implemented in a complementary metal-oxide-semiconductor (CMOS) technology. Key to shrinking the footprint is a reflective-type phase-shifting structure with 3D variable TTD reflectors within a sub-wavelength footprint. This achieves ultra-broadband phase tuning by using them to vary the length of the waveguide's path to ground. They produce a delay-to-area ratio that yields a substantially higher on-chip channel capacity compared with existing state-of-the-art methods. This component, when integrated in arrays, enables high-resolution imaging and low-squint beamforming for wideband communication, on-chip radar and other applications.

Si/Ge phototransistor with responsivity >1000A/W on a silicon photonics platform

In this article, we report a Si/Ge waveguide phototransistor with high responsivity and low dark current under low bias voltages, due to an engineered electric field distribution. The photodetector consists of n-i-p-i-n doping regions and shows a responsivity of 606 A/W at 1 V bias, and 1032 A/W at 2.8V bias with an input optical power of -50 dBm, and dark current of 4 µA and 42 µA respectively. This is achieved by placing two p+-doped regions in the silicon slab region beneath the Ge epitaxial layer. A measured small signal -3 dB bandwidth of 1.5 GHz with a -80 dBc/Hz phase noise response at 1 KHz frequency offset were demonstrated experimentally.

Multi-beam, WDM-based photonic beamformer with spectrum reuse

This manuscript presents a wavelength-division multiplexing (WDM)-based photonic beamformer for an RF phased array antenna transmitter, capable of simultaneously generating multiple beams using the same optical spectrum. In the proposed architecture, for each RF beam, a WDM signal comprising the modulated RF sidebands undergoes complex-valued filtering, while another WDM signal with the same channels, but carrying only optical carriers, goes through an optical frequency-shifting stage. The proposed architecture allows the same WDM channels to be reused for multiple RF beams. The detection of the frequency-shifted optical carrier and the filtered RF sideband of each WDM channel at the photodetector produces a frequency-converted, correctly weighted signal to be fed to each antenna element. The features described herein are analytically derived, numerically simulated, and experimentally demonstrated. Results showcase two independent beams being transmitted in different directions.

An integrated photonic-assisted phased array transmitter for direct fiber to mm-wave links

Millimeter-wave (mm-wave) phased arrays can realize multi-Gb/s communication links but face challenges such as signal distribution and higher power consumption hindering their widespread deployment. Hybrid photonic mm-wave solutions combined with fiber-optics can address some of these bottlenecks. Here, we report an integrated photonic-assisted phased array transmitter applicable for low-power, compact radio heads in fiber to mm-wave fronthaul links. The transmitter utilizes optical heterodyning within an electronically controlled photonic network for mm-wave generation, beamforming, and steering. A photonic matrix phase adjustment architecture reduces the number of phase-shift elements from M × N to M + N lowering area and power requirements. A proof-of-concept 2 × 8 phased array transmitter is implemented that can operate from 24-29 GHz, has a steering range of 40°, and achieves 5 dBm EIRP at an optical power of 55 mW without using active mm-wave electronics. Data streams at 2.5 Gb/s are transmitted over 3.6 km of optical fiber and wirelessly transmitted attaining bit-error rates better than 10^-11.

Chip-based SBS for image rejection in a broadband microwave photonic mixer

Microwave photonics offers a promising solution for frequency converting microwave signals, however, demonstrations so far have either been bulky fibre implementations or lacked rejection of interfering image signals. Here, we demonstrate the first microwave photonic mixer with image rejection of broadband signals utilising chip-based stimulated Brillouin scattering and interferometry. We demonstrate frequency down-conversion of carrier frequencies ranging from 10 GHz-16 GHz, ultra-high image rejection for a single tone of up to 70 dB, and 100 MHz and 400 MHz wide analogue signals with 28.5 dB and 16 dB image rejection, respectively. Furthermore, we down-convert 200 Mb/s quadrature-phase-shift keying signals with an error vector magnitude as low as -9.6 dB when simultaneously present interfering image signals are suppressed by the mixer.

Multiband Signal Receiver by Using an Optical Bandpass Filter Integrated with a Photodetector on a Chip

Photonic integration brings the promise of significant cost, power and space savings and propels the real applications of microwave photonic technology. In this paper, a multiband radio frequency (RF) signal simultaneous receiver using an optical bandpass filter (OBPF) integrated with a photodetector (PD) on a chip is proposed, which was experimentally demonstrated. The OBPF was composed of ring-assisted Mach-Zehnder interferometer with a periodical bandpass response featuring a box-like spectral shape. The OBPF was connected to a PD and then integrated onto a single silicon photonic chip. Phase-modulated multiband RF signals transmitted from different locations were inputted into the OBPF, by which one RF sideband was filtered out and the phase modulation to intensity modulation conversion was realized. The single sideband with carrier signals were then simultaneously detected by the PD. A proof-of-concept experiment with the silicon photonic integrated chip was implemented to simultaneously receive four channels of 8 GHz, 12 GHz, 14 GHz and 18 GHz in the X- and Ku-bands. The performance of the integrated microwave photonic multiband receiver-including the receiving sensitivity, the spurious free dynamic range, the gain and the noise figure across the whole operation frequency band-was characterized in detail.

High Linearity Microwave Photonic Up-Conversion System Based on Parallel Dual-Drive Mach–Zehnder Modulators

A large dynamic frequency up-conversion scheme based on parallel dual-drive Mach–Zehnder modulators (DD-MZM) and balance detection is proposed and demonstrated experimentally. By optimizing the distribution ratio of the optical carrier power and the IF signal power between the two DD-MZMs, the third-order intermodulation components in two sub-links cancel each other upon the balanced photodetector. The measured results show that the large spurious-free dynamic range of 112.3 dB·Hz4/5 is obtained for an intermediate frequency signal of 2 GHz up-converted to 18 GHz, which is a 14.8 dB enhancement compared with the traditional carrier suppression double-sideband modulation mixer. The frequency up-conversion performance of the established system for the broadband signal is measured with the results demonstrating the feasibility of the proposed optimization scheme.

An Approach to Ring Resonator Biosensing Assisted by Dielectrophoresis: Design, Simulation and Fabrication

The combination of extreme miniaturization with a high sensitivity and the potential to be integrated in an array form on a chip has made silicon-based photonic microring resonators a very attractive research topic. As biosensors are approaching the nanoscale, analyte mass transfer and bonding kinetics have been ascribed as crucial factors that limit their performance. One solution may be a system that applies dielectrophoretic forces, in addition to microfluidics, to overcome the diffusion limits of conventional biosensors. Dielectrophoresis, which involves the migration of polarized dielectric particles in a non-uniform alternating electric field, has previously been successfully applied to achieve a 1000-fold improved detection efficiency in nanopore sensing and may significantly increase the sensitivity in microring resonator biosensing. In the current work, we designed microring resonators with integrated electrodes next to the sensor surface that may be used to explore the effect of dielectrophoresis. The chip design, including two different electrode configurations, electric field gradient simulations, and the fabrication process flow of a dielectrohoresis-enhanced microring resonator-based sensor, is presented in this paper. Finite element method (FEM) simulations calculated for both electrode configurations revealed ∇E² values above 10¹⁷ V²m⁻³ around the sensing areas. This is comparable to electric field gradients previously reported for successful interactions with larger molecules, such as proteins and antibodies.

Photonic Integrated Circuits for NGPON2 ONU Transceivers (Invited)

The development of photonic integrated circuits (PIC) for access network applications, such as passive optical networks (PON), constitutes a very attractive ecosystem due to PON’s potential mass market. The implementation of PIC solutions in this context is expected to facilitate the possibility of increasing the complexity and functionalities of devices at a potentially lower cost. We present a review addressing the prominent access network market requirements and the main restrictions stemming from its specific field of application. Higher focus is given to PON devices for the optical network unit (ONU) and the implications of designing a device ready for market by discussing its various perspectives in terms of technology and cost. The discussed PIC solutions/approaches in this paper are mainly based on indium phosphide (InP) technology, due to its monolithic integration capabilities. A comprehensive set of guidelines considering the current technology limitations, benefits, and processes are presented. Additionally, key current approaches and efforts are analyzed for PON next generations, such as next-generation PON 2 (NGPON2) and high-speed PON (HSP).