Tuning the charge flow between Marcus regimes in an organic thin-film device

Energy level measurement for organic semiconductors

Along with the miniaturization and versatility of organic optoelectronic devices, it is desired to achieve a profound comprehension of the charge transport mechanism and even the basic device physics. The basis of these studies is the acquisition of relevant information about energy levels. This review provides a comprehensive analysis of five commonly-used techniques, including cyclic voltammetry, ultraviolet electron spectroscopy, inverse photoemission electron spectroscopy, low energy inverse photoemission spectroscopy and hot electron spectroscopy. According to the advantages and disadvantages, working mechanism, and application conditions, researchers will screen out a reliable and suitable characterization method, quickly and accurately. This should be beneficial for the efficient promotion of organic electronics and save valuable time for the related research studies.

Strategies and applications of generating spin polarization in organic semiconductors

The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.

Electronic Mechanism of In Situ Inversion of Rectification Polarity in Supramolecular Engineered Monolayer

This Communication describes polarity inversion in molecular rectification and the related mechanism. Using a supramolecular engineered, ultrastable, binary-mixed self-assembled monolayer (SAM) composed of an organic molecular diode (SC₁₁BIPY) and an inert reinforcement molecule (SC₈), we probed a rectification ratio (r)-voltage relationship over an unprecedentedly wide voltage range (up to |3.5 V|) with statistical significance. We observed positive polarity in rectification at |1.0 V| (r = 107), followed by disappearance of rectification at ∼|2.25 V|, and then eventual emergence of new rectification with the opposite polarity at ∼|3.5 V| (r = 0.006; 1/r = 162). The polarity inversion occurred with a span over 4 orders of magnitude in r. Low-temperature experiments, electronic structure analysis, and theoretical calculations revealed that the unusually wide voltage range permits access to molecular orbital energy levels that are inaccessible in the traditional narrow voltage regime, inducing the unprecedented in situ inversion of polarity.

A novel energy level detector for molecular semiconductors

The multifunction of molecule-based devices is always achieved by improving their charge transport characteristics. These characteristics depend strongly on the energy levels of molecular semiconductors, which fundamentally govern the working principle and device performance. Therefore, an accurate measurement of these energy levels is crucial for evaluating the availability of the prepared materials and thus optimizing the device performance. Here, an easy-to-operate three-terminal hot electron transistor has been developed, which comprises a molecular optoelectronic device that records the charge transport. It achieves exceptional properties including the lowest unoccupied molecular orbit level, highest occupied molecular orbit level, higher energy states, and higher electronic bandgap. When compared with existing techniques such as cyclic voltammetry, inverse photoemission spectroscopy, and ultraviolet photoemission spectroscopy, the hot electron transistor provides in-situ characterization and categorizes the measured energy information as intrinsic properties of the molecular semiconductor. Furthermore, we provide an in-depth understanding of the fundamental device-physics, which provides promising guidance for performance optimization.

Energetics of the charge generation in organic donor-acceptor interfaces

Non-fullerene acceptor materials have posed new paradigms for the design of organic solar cells , whereby efficient carrier generation is obtained with small driving forces, in order to maximize the open-circuit voltage (V_OC). In this paper, we use a coarse-grained mixed quantum-classical method, which combines Ehrenfest and Redfield theories, to shed light on the charge generation process in small energy offset interfaces. We have investigated the influence of the energetic driving force as well as the vibronic effects on the charge generation and photovoltaic energy conversion. By analyzing the effects of the Holstein and Peierls vibrational couplings, we find that vibrational couplings produce an overall effect of improving the charge generation. However, the two vibronic mechanisms play different roles: the Holstein relaxation mechanism decreases the charge generation, whereas the Peierls mechanism always assists the charge generation. Moreover, by examining the electron-hole binding energy as a function of time, we evince two distinct regimes for the charge separation: the temperature independent excitonic spread on a sub-100 fs timescale and the complete dissociation of the charge-transfer state that occurs on the timescale of tens to hundreds of picoseconds, depending on the temperature. The quantum dynamics of the system exhibits the three regimes of the Marcus electron transfer kinetics as the energy offset of the interface is varied.

Marcus inverted region of charge transfer from low-dimensional semiconductor materials

A key process underlying the application of low-dimensional, quantum-confined semiconductors in energy conversion is charge transfer from these materials, which, however, has not been fully understood yet. Extensive studies of charge transfer from colloidal quantum dots reported rates increasing monotonically with driving forces, never displaying an inverted region predicted by the Marcus theory. The inverted region is likely bypassed by an Auger-like process whereby the excessive driving force is used to excite another Coulomb-coupled charge. Herein, instead of measuring charge transfer from excitonic states (coupled electron-hole pairs), we build a unique model system using zero-dimensional quantum dots or two-dimensional nanoplatelets and surface-adsorbed molecules that allows for measuring charge transfer from transiently-populated, single-charge states. The Marcus inverted region is clearly revealed in these systems. Thus, charge transfer from excitonic and single-charge states follows the Auger-assisted and conventional Marcus charge transfer models, respectively. This knowledge should enable rational design of energetics for efficient charge extraction from low-dimensional semiconductor materials as well as suppression of the associated energy-wasting charge recombination.

Marcus inverted region for charge transfer from low-dimensional semiconductor materials has been long sought after. Here, the authors reveal this region by directly measuring charge transfer from single-charge states rather than excitonic states.

Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices

Intermolecular electron-transfer reactions are key processes in physics, chemistry, and biology. The electron-transfer rates depend primarily on the system reorganization energy, that is, the energetic cost to rearrange each reactant and its surrounding environment when a charge is transferred. Despite the evident impact of electron-transfer reactions on charge-carrier hopping, well-controlled electronic transport measurements using monolithically integrated electrochemical devices have not successfully measured the reorganization energies to this date. Here, it is shown that self-rolling nanomembrane devices with strain-engineered mechanical properties, on-a-chip monolithic integration, and multi-environment operation features can overcome this challenge. The ongoing advances in nanomembrane-origami technology allow to manufacture the nCap, a nanocapacitor platform, to perform molecular-level charge transport characterization. Thereby, employing nCap, the copper-phthalocyanine (CuPc) reorganization energy is probed, ≈0.93 eV, from temperature-dependent measurements of CuPc nanometer-thick films. Supporting the experimental findings, density functional theory calculations provide the atomistic picture of the measured CuPc charge-transfer reaction. The experimental strategy demonstrated here is a consistent route towards determining the reorganization energy of a system formed by molecules monolithically integrated into electrochemical nanodevices.

Bias-Polarity-Dependent Direct and Inverted Marcus Charge Transport Affecting Rectification in a Redox-Active Molecular Junction

This paper describes the transition from the normal to inverted Marcus region in solid-state tunnel junctions consisting of self-assembled monolayers of benzotetrathiafulvalene (BTTF), and how this transition determines the performance of a molecular diode. Temperature-dependent normalized differential conductance analyses indicate the participation of the HOMO (highest occupied molecular orbital) at large negative bias, which follows typical thermally activated hopping behavior associated with the normal Marcus regime. In contrast, hopping involving the HOMO dominates the mechanism of charge transport at positive bias, yet it is nearly activationless indicating the junction operates in the inverted Marcus region. Thus, within the same junction it is possible to switch between Marcus and inverted Marcus regimes by changing the bias polarity. Consequently, the current only decreases with decreasing temperature at negative bias when hopping is "frozen out," but not at positive bias resulting in a 30-fold increase in the molecular rectification efficiency. These results indicate that the charge transport in the inverted Marcus region is readily accessible in junctions with redox molecules in the weak coupling regime and control over different hopping regimes can be used to improve junction performance.

Solid State Dilution Controls Marcus Inverted Transport in Rectifying Molecular Junctions

Traditional Marcus theory accounts for electron transfer reactions in solutions, and the polarity of solvent molecule matters for them. How such an environment polarity affects electron transfer reactions in solid-state devices, however, remains uncertain. This paper describes how the Marcus inverted charge transport is influenced by solid-state molecular dilution in large-area tunneling junctions. A monolayer of 2,2'-bipyridyl terminated n-alkanethiolate (SC₁₁BIPY), which rectifies currents via electron hopping within the inverted regime, is diluted with n-alkanethiolate (SC_n) of different lengths (n = 8, 10, or 18) or at different surface mole fractions. The dilution introduces nonpolar environments within the monolayer, hinders stabilization of charged BIPY species upon electron hopping, and pushes the equilibrium of BIPY ⇄ BIPY^•- process toward the reverse direction. Our work demonstrates that solid-state molecular dilution permits systematic control of the environment polarity of active component in nanoscale devices, much like solvent polarity control in solution, and their performances.

Inverted Region in Bimolecular Electron Transfer in Solution Enabled by Delocalization

Rate constants for bimolecular electron transfer (ET) increased with driving force, -ΔG°, reached a plateau, and then decreased in an inverted region. This rate data was described well by electron transfer theory subject to a diffusion-controlled limit. These were for ET from radical anions of polydecylthiophene (P3DT) to a series of acceptors in THF solution. When the donor was the smaller anion of quaterthiophene (T₄^•-) the inverted region was much less prominent and still less so for when the donor was the anion of bithiophene (T₂^•-). Description of the data using ET theory identifies smaller electronic couplings for the highly delocalized P3DT anions as enabling the inverted behavior: The presence of a Marcus inverted region is a consequence of delocalized electronic states. The results further imply that electronic couplings smaller than usually found for molecules in contact could boost efficiency of energy storage by electron transfer and identifies size-mismatch as an important concept in control of electronic couplings.

Interplay of Fermi Level Pinning, Marcus Inverted Transport, and Orbital Gating in Molecular Tunneling Junctions

This Letter examines the interplay of important tunneling mechanisms-Fermi level pinning, Marcus inverted transport, and orbital gating-in a molecular rectifier. The temperature dependence of the rectifying molecular junction containing 2,2'-bipyridyl terminated n-alkanethiolate was investigated. A bell-shaped trend of activation energy as a function of applied bias evidenced the dominant occurrence of unusual Marcus inverted transport, while retention of rectification at low temperatures implied that the rectification obeyed the resonant tunneling regime. The results allowed reconciling two separately developed transport models, Marcus-Landauer energetics and Fermi level pinning-based rectification. Our work shows that the internal orbital gating can be substituted with the pinning effect, which pushes the transport mechanism into the Marcus inverted regime.

Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions

The negative differential resistance (NDR) effect enables multilevel storage and gradual resistance modulation in resistive switching (RS) devices to be achieved. However, the poor reproducibility of NDR is the obstacle that restricts their application because the appearance of the NDR effect in RS devices is usually accidental or unstable at room temperature. In this report, we demonstrate a polarization and interfacial defect modulated NDR effect in h-LuFeO₃/CoFe₂O₄ heterojunction-based RS devices; especially, the NDR is reproducible after hundreds of cycles at room temperature. This research provides an effective way for realizing the reproducible NDR effect in ferroelectric RS devices, and it may promote the development and application of RS devices with the NDR effect.

Sub-picosecond charge-transfer at near-zero driving force in polymer:non-fullerene acceptor blends and bilayers

Organic photovoltaics based on non-fullerene acceptors (NFAs) show record efficiency of 16 to 17% and increased photovoltage owing to the low driving force for interfacial charge-transfer. However, the low driving force potentially slows down charge generation, leading to a tradeoff between voltage and current. Here, we disentangle the intrinsic charge-transfer rates from morphology-dependent exciton diffusion for a series of polymer:NFA systems. Moreover, we establish the influence of the interfacial energetics on the electron and hole transfer rates separately. We demonstrate that charge-transfer timescales remain at a few hundred femtoseconds even at near-zero driving force, which is consistent with the rates predicted by Marcus theory in the normal region, at moderate electronic coupling and at low re-organization energy. Thus, in the design of highly efficient devices, the energy offset at the donor:acceptor interface can be minimized without jeopardizing the charge-transfer rate and without concerns about a current-voltage tradeoff.

It has been commonly believed that the driving force at the donor-acceptor heterojunction is vital to efficient charge separation in organic solar cells. Here Zhong et al. show that the driving force can be as small as 0.05 eV without compromising the charge transfer rate and efficiency.