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Dolai J, Joshi P, Mondal PP, Maity A, Mukherjee B, Jana NR. Blinking Carbon Dots as a Super-resolution Imaging Probe. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16003-16010. [PMID: 38512299 DOI: 10.1021/acsami.4c01609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/22/2024]
Abstract
Single-molecule localization microscopy (SMLM) emerges as a powerful approach for super-resolution imaging that provides unprecedented resolution at the nanometer length scale. However, the development of appropriate probes with specific photophysical traits and characteristics is crucial for this approach. This study demonstrates two different fluorescent carbon dots (CDs) derived from the same molecular precursor─one emitting in red and the other in green─as a SMLM-based super-resolution imaging probe for different applications with an average localization precision of 20 nm and a resolution of 60 nm. Both the CDs exhibit spontaneous blinking with high photon count and low duty cycle but with different blinking cycles. The red emissive CDs with a lower blinking cycle are ideal for quantitative analysis, whereas green emissive CDs with a higher blinking cycle are ideal for high-resolution imaging. We show that the difference in blinking features is linked to their chemical compositions, and the presence of much denser trap states in red emitting CDs is responsible for the reduction of its blinking cycle. This study shows that CDs can be designed as a potential probe for SMLM-based super-resolution imaging for diverse bioimaging applications.
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Affiliation(s)
- Jayanta Dolai
- School of Materials Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
| | - Prakash Joshi
- Mondal Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Partha Pratim Mondal
- Mondal Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Cryogenic Technology, Indian Institute of Science, Bangalore 560012, India
| | - Anupam Maity
- School of Materials Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
| | - Buddhadev Mukherjee
- School of Materials Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
| | - Nikhil R Jana
- School of Materials Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
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Spassov D, Paskaleva A. Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO 2/Al 2O 3 Nanolaminated Stacks. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2456. [PMID: 37686963 PMCID: PMC10490109 DOI: 10.3390/nano13172456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/26/2023] [Accepted: 08/28/2023] [Indexed: 09/10/2023]
Abstract
The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, there are still innovations within the current CMOS technology, which could be implemented to improve the data storage ability of memory cells-e.g., replacement of the current dominant floating gate non-volatile memory (NVM) by a charge trapping memory. The latter offers better operation characteristics, e.g., improved retention and endurance, lower power consumption, higher program/erase (P/E) speed and allows vertical stacking. This work provides an overview of our systematic studies of charge-trapping memory cells with a HfO2/Al2O3-based charge-trapping layer prepared by atomic layer deposition (ALD). The possibility to tailor density, energy, and spatial distributions of charge storage traps by the introduction of Al in HfO2 is demonstrated. The impact of the charge trapping layer composition, annealing process, material and thickness of tunneling oxide on the memory windows, and retention and endurance characteristics of the structures are considered. Challenges to optimizing the composition and technology of charge-trapping memory cells toward meeting the requirements for high density of trapped charge and reliable storage with a negligible loss of charges in the CTF memory cell are discussed. We also outline the perspectives and opportunities for further research and innovations enabled by charge-trapping HfO2/Al2O3-based stacks.
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Affiliation(s)
| | - Albena Paskaleva
- Institute of Solid-State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria;
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Sun Q, Gao T, Li X, Li W, Li X, Sakamoto K, Wang Y, Li L, Kanehara M, Liu C, Pang X, Liu X, Zhao J, Minari T. Layer-By-Layer Printing Strategy for High-Performance Flexible Electronic Devices with Low-Temperature Catalyzed Solution-Processed SiO 2. SMALL METHODS 2021; 5:e2100263. [PMID: 34927859 DOI: 10.1002/smtd.202100263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 04/16/2021] [Indexed: 06/14/2023]
Abstract
Additive printing techniques have been widely investigated for fabricating multilayered electronic devices. In this work, a layer-by-layer printing strategy is developed to fabricate multilayered electronics including 3D conductive circuits and thin-film transistors (TFTs) with low-temperature catalyzed, solution-processed SiO2 (LCSS) as the dielectric. Ultrafine, ultrasmooth LCSS films can be facilely formed at 90 °C on a wide variety of organic and inorganic substrates, offering a versatile platform to construct complex heterojunction structures with layer-by-layer fashion at microscale. The high-resolution 3D conductive circuits formed with gold nanoparticles inside the LCSS dielectric demonstrate a high-speed response to the transient voltage in less than 1 µs. The TFTs with semiconducting single-wall carbon nanotubes can be operated with the accumulation mode at a low voltage of 1 V and exhibit average field-effect mobility of 70 cm2 V-1 s-1 , on/off ratio of 107 , small average hysteresis of 0.1 V, and high yield up to 100% as well as long-term stability, high negative-gate bias stability, and good mechanical stability. Therefore, the layer-by-layer printing strategy with the LCSS film is promising to assemble large-scale, high-resolution, and high-performance flexible electronics and to provide a fundamental understanding for correlating dielectric properties with device performance.
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Affiliation(s)
- Qingqing Sun
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Tianqi Gao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Xiaomeng Li
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Wanli Li
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Xiaoqian Li
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Kenji Sakamoto
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Yong Wang
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | - Lingying Li
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
| | | | - Chuan Liu
- Lab of Display Material and Technology School of Electronics and Information Technology, Sun Yat-Sen University, Guangdong, 510275, P. R. China
| | - Xinchang Pang
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Xuying Liu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, National Center for International Joint Research of Micro-nano Moulding Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Takeo Minari
- Printed Electronics Group, Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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Rehman MM, Rehman HMMU, Gul JZ, Kim WY, Karimov KS, Ahmed N. Decade of 2D-materials-based RRAM devices: a review. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2020; 21:147-186. [PMID: 32284767 PMCID: PMC7144203 DOI: 10.1080/14686996.2020.1730236] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2019] [Revised: 02/12/2020] [Accepted: 02/12/2020] [Indexed: 06/01/2023]
Abstract
Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and physical properties over the past decade owing to their ultrathin, flexible, and multilayer structure. These layered materials are being used in numerous electronic devices for various applications, and this review will specifically focus on the resistive random access memories (RRAMs) based on 2D materials and their nanocomposites. This study presents the device structures, conduction mechanisms, resistive switching properties, fabrication technologies, challenges and future aspects of 2D-materials-based RRAMs. Graphene, derivatives of graphene and MoS2 have been the major contributors among 2D materials for the application of RRAMs; however, other members of this family such as hBN, MoSe2, WS2 and WSe2 have also been inspected more recently as the functional materials of nonvolatile RRAM devices. Conduction in these devices is usually dominated by either the penetration of metallic ions or migration of intrinsic species. Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed (<10 ns), less power losses (10 pJ), lower threshold voltage (<1 V) long retention time (>10 years), high electrical endurance (>108 voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.
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Affiliation(s)
- Muhammad Muqeet Rehman
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
| | | | - Jahan Zeb Gul
- Department of Mechatronics & Biomedical Engineering, AIR University, Islamabad, Pakistan
| | - Woo Young Kim
- Faculty of Electronic Engineering, Jeju National University, Jeju, South Korea
| | - Khasan S Karimov
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
| | - Nisar Ahmed
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
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