1
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Liang Q, Zheng F, Li M. Polar metals in strain-engineered KNbO 3/CaNbO 3 superlattices: a first-principles study. Phys Chem Chem Phys 2023; 25:30596-30605. [PMID: 37930035 DOI: 10.1039/d3cp02897f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
Polar metals have generated significant interest since the ferroelectric-like structural transition in metallic LiOsO3 was discovered. Herein, we report on a strain-modulated polar metal in the ferroelectric/metal superlattice of 1 : 1 KNbO3/CaNbO3. Using first-principles calculations, we have investigated the structural distortions, including polar distortions and octahedral rotations, and layer-by-layer electronic structures in the KNbO3/CaNbO3 superlattice under different epitaxial strains. Along the stacking direction, the superlattice has almost parallel polar displacements under compressive strain, whereas both in-plane and out-of-plane antiferroelectric-like polar displacements are robust under intermediate strain, which is connected to the octahedral tilting pattern and interlayer electron transfer. In addition, the in-plane polar distortions are enhanced by tensile strains and have a sudden increase at 4% tensile strain. The metallicity is mainly contributed by d electrons from Nb atoms. And orbital-resolved electron distributions in each layer show that d-orbital splitting is related not only to the epitaxial strain but also to the direction of polar displacements. Our results suggest an efficient way to tune polar distortions as well as local metallicity via epitaxial strains in the superlattice.
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Affiliation(s)
- Qihang Liang
- Department of Physics, Capital Normal University, Beijing 100048, P. R. China.
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Menglei Li
- Department of Physics, Capital Normal University, Beijing 100048, P. R. China.
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2
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Yin Y, Gong Q, Yi M, Guo W. Monolayer polar metals with large piezoelectricity derived from MoSi 2N 4. MATERIALS HORIZONS 2023; 10:5177-5184. [PMID: 37718912 DOI: 10.1039/d3mh00743j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/19/2023]
Abstract
The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of the MoSi2N4 family by breaking the out-of-plane structural symmetry through Z (P/As) substitution of N. Despite the semiconducting nature of MoSi2X4 (X = N/P/As), four Janus MoSi2NxZ4-x monolayers are found to be polar metals owing to the weak coupling between the conducting electrons and electric polarity. The metallicity is originated from the Z substitution induced delocalization of occupied electrons in Mo-d orbitals. The out-of-plane electric polarizations around 1.5-15.7 pC m-1 are determined by the asymmetric out-of-plane charge distribution due to the non-centrosymmetric Janus structure. The corresponding out-of-plane piezoelectricity is further revealed as high as 18.7-73.3 pC m-1 and 0.05-0.25 pm V-1 for the piezoelectric strain and stress coefficients, respectively. The results demonstrate polar metallicity and high out-of-plane piezoelectricity in Janus MoSi2NxZ4-x monolayers and open new vistas for exploiting unusual coexisting properties in monolayers derived from the MoSi2N4 family.
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Affiliation(s)
- Yan Yin
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
| | - Qihua Gong
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
- MIIT Key Laboratory of Aerospace Information Materials and Physics & College of Physics, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 211106, China
| | - Min Yi
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
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3
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Yao X, Wang C, Guo EJ, Wang X, Li X, Liao L, Zhou Y, Lin S, Jin Q, Ge C, He M, Bai X, Gao P, Yang G, Jin KJ. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO 3/BiFeO 3 Multilayers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6194-6202. [PMID: 35072446 DOI: 10.1021/acsami.1c21703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.
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Affiliation(s)
- Xiaokang Yao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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4
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Lu J, Si L, Zhang Q, Tian C, Liu X, Song C, Dong S, Wang J, Cheng S, Qu L, Zhang K, Shi Y, Huang H, Zhu T, Mi W, Zhong Z, Gu L, Held K, Wang L, Zhang J. Defect-Engineered Dzyaloshinskii-Moriya Interaction and Electric-Field-Switchable Topological Spin Texture in SrRuO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102525. [PMID: 34223676 DOI: 10.1002/adma.202102525] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2021] [Indexed: 06/13/2023]
Abstract
In situ electrical control of the Dzyaloshinskii-Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion-based device applications. An atomic design of defective interfaces in spin-orbit-coupled transition-metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO3 /SrTiO3 (001), a sharp interface is constructed between oxygen-deficient and stoichiometric SrRuO3 . This interfacial inversion-symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit-cell-thick SrRuO3 . This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect-engineered topological spin textures may offer an alternate perspective for future skyrmion-based memristor and synaptic devices.
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Affiliation(s)
- Jingdi Lu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Liang Si
- Institut für Festkörperphysik, TU Wien, Wiedner Hauptstraße 8-10, Vienna, 1040, Austria
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Chengfeng Tian
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Xin Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Chuangye Song
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Shouzhe Dong
- School of Materials Science and Engineering, and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Jie Wang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Sheng Cheng
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Lili Qu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Kexuan Zhang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Houbing Huang
- School of Materials Science and Engineering, and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin, 300354, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Karsten Held
- Institut für Festkörperphysik, TU Wien, Wiedner Hauptstraße 8-10, Vienna, 1040, Austria
| | - Lingfei Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
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5
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Sarott MF, Gradauskaite E, Nordlander J, Strkalj N, Trassin M. In situmonitoring of epitaxial ferroelectric thin-film growth. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:293001. [PMID: 33873174 DOI: 10.1088/1361-648x/abf979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Accepted: 04/19/2021] [Indexed: 06/12/2023]
Abstract
In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structuralin situdiagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generationin situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.
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Affiliation(s)
- Martin F Sarott
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Elzbieta Gradauskaite
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Johanna Nordlander
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Nives Strkalj
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
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6
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Saghayezhian M, Wang Z, Howe D, Siwakoti P, Plummer EW, Zhu Y, Zhang J. Formation of dislocations via misfit strain across interfaces in epitaxial BaTiO 3and SrIrO 3heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:275003. [PMID: 33946062 DOI: 10.1088/1361-648x/abfdf1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Accepted: 05/04/2021] [Indexed: 06/12/2023]
Abstract
Dislocations often occur in thin films with large misfit strain as a result of strain energy accumulation and can drastically change the film properties. Here the structure and dislocations in oxide heterostructures with large misfit strain are investigated on atomic scale. When grown on SrTiO3(001), the dislocations in both the monolithic BaTiO3thin film and its superlattices with SrIrO3appear above a critical thickness around 6 nm. The edge component of the dislocations is seen in both cases with the Burgers vector ofa⟨100⟩. However, compared to monolithic BaTiO3, the dislocation density is slightly lower in BaTiO3/SrIrO3superlattices. In the superlattice, when considering the SrTiO3lattice constant as the reference, BaTiO3has a larger misfit strain comparing with SrIrO3. It is found that in both cases, the formation of dislocation is only affected by the critical thickness of the film with larger lattice misfit (BaTiO3), regardless of the existence of a strong octahedral tilt/rotation mismatch at BaTiO3/SrIrO3interface. Our findings suggest that it is possible to control the position of dislocations, an important step toward defect engineering.
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Affiliation(s)
- M Saghayezhian
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - Z Wang
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - D Howe
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - P Siwakoti
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - E W Plummer
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
| | - Y Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - Jiandi Zhang
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States of America
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7
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Zabalo A, Stengel M. Switching a Polar Metal via Strain Gradients. PHYSICAL REVIEW LETTERS 2021; 126:127601. [PMID: 33834822 DOI: 10.1103/physrevlett.126.127601] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Accepted: 02/15/2021] [Indexed: 06/12/2023]
Abstract
Although rare, spontaneous breakdown of inversion symmetry sometimes occurs in a material which is metallic: these are commonly known as polar metals or ferroelectric metals. Their polarization, however, is difficult to switch via an electric field, which limits the experimental control over band topology. Here we investigate, via first-principles theory, flexoelectricity as a possible way around this obstacle with the well-known polar metal LiOsO_{3}. The flexocoupling coefficients are computed for this metal with high accuracy with an approach based on real-space sums of the interatomic force constants. A Landau-Ginzburg-Devonshire-type first-principles Hamiltonian is built and a critical bending radius to switch the material is estimated, whose order of magnitude is comparable to that of BaTiO_{3}.
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Affiliation(s)
- Asier Zabalo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Massimiliano Stengel
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avanats, 08010 Barcelona, Spain
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8
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Ye M, Hu S, Zhu Y, Zhang Y, Ke S, Xie L, Zhang Y, Hu S, Zhang D, Luo Z, Gu M, He J, Zhang P, Zhang W, Chen L. Electric Polarization Switching on an Atomically Thin Metallic Oxide. NANO LETTERS 2021; 21:144-150. [PMID: 33306405 DOI: 10.1021/acs.nanolett.0c03417] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom. Polarization switching and metallic screening are well-known examples of mutually exclusive properties that cannot coexist in bulk solids. Here we report the fabrication of (SrRuO3)1/(BaTiO3)10 superlattices that exhibits reversible polarization switching in an atomically thin metallic layer. A multipronged investigation combining structural analyses, electrical measurements, and first-principles electronic structure calculations unravels the coexistence of two-dimensional (2D) metallicity in the SrRuO3 layer accompanied by the breaking of inversion symmetry, supporting electric polarization along the out-of-plane direction. Such a 2D ferroelectric-like metal paves a novel way to engineer a quantum multistate with unusual coexisting properties, such as ferroelectrics and metals, manipulated by external fields.
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Affiliation(s)
- Mao Ye
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Songbai Hu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuanmin Zhu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yubo Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shanming Ke
- School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
| | - Lin Xie
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuan Zhang
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China
| | - Sixia Hu
- Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, China
| | - Dongwen Zhang
- College of Science, National University of Defense Technology, Hunan 410073, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Meng Gu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Peihong Zhang
- Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260, United States
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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9
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Gu Y, Song C, Zhang Q, Li F, Tan H, Xu K, Li J, Saleem MS, Fayaz MU, Peng J, Hu F, Gu L, Liu W, Zhang Z, Pan F. Interfacial Control of Ferromagnetism in Ultrathin SrRuO 3 Films Sandwiched between Ferroelectric BaTiO 3 Layers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6707-6715. [PMID: 31927907 DOI: 10.1021/acsami.9b20941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization and conductivity of perovskite oxide films under reduced dimensionality is detrimental to their device performance, preventing their active low-dimensional application. Herein, by inserting the ultrathin 4d ferromagnetic SrRuO3 layer between ferroelectric BaTiO3 layers to form a sandwich heterostructure, we observe enhanced physical properties in ultrathin SrRuO3 films, including longitudinal conductivity, Curie temperature, and saturated magnetic moment. Especially, the saturated magnetization can be enhanced to ∼3.12 μB/Ru in ultrathin BaTiO3/SrRuO3/BaTiO3 trilayers, which is beyond the theoretical limit of bulk value (2 μB/Ru). This observation is attributed to the synergistic ferroelectric proximity effect (SFPE) at upper and lower BaTiO3/SrRuO3 heterointerfaces, as revealed by the high-resolution lattice structure analysis. This SFPE in dual-ferroelectric interface cooperatively induces ferroelectric-like lattice distortions in RuO6 oxygen octahedra and subsequent spin-state crossover in SrRuO3, which in turn accounts for the observed enhanced magnetization. Besides the fundamental significance of interface-induced spin-lattice coupling, our findings also provide a viable route to the electrical control of magnetic ordering, taking a step toward low-power applications in all-oxide spintronics.
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Affiliation(s)
- Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Fan Li
- Max Planck Institute for Microstructure Physics , Halle (Saale) D-06120 , Germany
| | - Hengxin Tan
- Max Planck Institute for Microstructure Physics , Halle (Saale) D-06120 , Germany
| | - Kun Xu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jia Li
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Muhammad Shahrukh Saleem
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Muhammad Umer Fayaz
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jingjing Peng
- Beijing Institute of Aeronautical Materials , Beijing 100095 , China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Wei Liu
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
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