1
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Krumrein M, Nold R, Davidson-Marquis F, Bouamra A, Niechziol L, Steidl T, Peng R, Körber J, Stöhr R, Gross N, Smet JH, Ul-Hassan J, Udvarhelyi P, Gali A, Kaiser F, Wrachtrup J. Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide. ACS PHOTONICS 2024; 11:2160-2170. [PMID: 38911842 PMCID: PMC11192030 DOI: 10.1021/acsphotonics.4c00538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 04/29/2024] [Accepted: 05/01/2024] [Indexed: 06/25/2024]
Abstract
Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T 2 ∼ 42 μs. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.
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Affiliation(s)
- Marcel Krumrein
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Raphael Nold
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Flavie Davidson-Marquis
- Materials
Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology, Belvaux 4362, Luxembourg
- Department
of Physics and Materials Science, University
of Luxembourg, Belvaux 4362, Luxembourg
| | - Arthur Bouamra
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Lukas Niechziol
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Timo Steidl
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Ruoming Peng
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Jonathan Körber
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Rainer Stöhr
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
| | - Nils Gross
- Solid
State Nanophysics, Max Planck Institute
for Solid State Research, Stuttgart 70569, Germany
| | - Jurgen H. Smet
- Solid
State Nanophysics, Max Planck Institute
for Solid State Research, Stuttgart 70569, Germany
| | - Jawad Ul-Hassan
- Department
of Physics, Chemistry and Biology, Linköping
University, Linköping 581 83, Sweden
| | - Péter Udvarhelyi
- Wigner
Research
Centre for Physics, Budapest 1121, Hungary
- Institute
of Physics, Department of Atomic Physics, Budapest University of Technology and Economics, Budapest 1117, Hungary
- MTA-WFK
Lendület “Momentum” Semiconductor Nanostructures
Research Group, Budapest 1525, Hungary
| | - Adam Gali
- Wigner
Research
Centre for Physics, Budapest 1121, Hungary
- Institute
of Physics, Department of Atomic Physics, Budapest University of Technology and Economics, Budapest 1117, Hungary
- MTA-WFK
Lendület “Momentum” Semiconductor Nanostructures
Research Group, Budapest 1525, Hungary
| | - Florian Kaiser
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
- Materials
Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology, Belvaux 4362, Luxembourg
- Department
of Physics and Materials Science, University
of Luxembourg, Belvaux 4362, Luxembourg
| | - Jörg Wrachtrup
- 3rd
Institute of Physics, IQST, and Research Centre Scope, University of Stuttgart, Stuttgart 70569, Germany
- Max
Planck
Institute for Solid State Research, Stuttgart 70569, Germany
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2
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Day AM, Sutula M, Dietz JR, Raun A, Sukachev DD, Bhaskar MK, Hu EL. Electrical manipulation of telecom color centers in silicon. Nat Commun 2024; 15:4722. [PMID: 38830869 PMCID: PMC11148098 DOI: 10.1038/s41467-024-48968-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 05/14/2024] [Indexed: 06/05/2024] Open
Abstract
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.
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Affiliation(s)
- Aaron M Day
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Madison Sutula
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Jonathan R Dietz
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Alexander Raun
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | | | | | - Evelyn L Hu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
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3
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Lew CTK, Sewani VK, Iwamoto N, Ohshima T, McCallum JC, Johnson BC. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide. PHYSICAL REVIEW LETTERS 2024; 132:146902. [PMID: 38640398 DOI: 10.1103/physrevlett.132.146902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 02/20/2024] [Indexed: 04/21/2024]
Abstract
Spin defects in silicon carbide are promising candidates for quantum sensing applications as they exhibit long coherence times even at room temperature. However, spin readout methods that rely on fluorescence detection can be challenging due to poor photon collection efficiency. Here, we demonstrate coherent spin control and all-electrical readout of a small ensemble of spins in a SiC junction diode using pulsed electrically detected magnetic resonance. A lock-in detection scheme based on a three stage modulation cycle is implemented, significantly enhancing the signal-to-noise ratio. This technique enabled observation of coherent spin dynamics, specifically Rabi spin nutation, spin dephasing, and spin decoherence. The use of these protocols for magnetometry applications is evaluated.
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Affiliation(s)
- C T-K Lew
- School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - V K Sewani
- University of New South Wales, Kensington, New South Wales 2052, Australia
| | - N Iwamoto
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan
| | - T Ohshima
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan
- Department of Materials Science, Tohoku University, 6-6-02 Aramaki-Aza, Aoba-ku, Sendai 980-8579, Japan
| | - J C McCallum
- School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - B C Johnson
- School of Science, RMIT University, VIC 3001, Australia
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4
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Castelletto S, Lew CTK, Lin WX, Xu JS. Quantum systems in silicon carbide for sensing applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014501. [PMID: 38029424 DOI: 10.1088/1361-6633/ad10b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.
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Affiliation(s)
- S Castelletto
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - C T-K Lew
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
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5
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Zhou J, Li X, Hou X, Ke H, Fan X, Luan J, Peng H, Zeng Q, Lou H, Wang J, Liu CT, Shen B, Sun B, Wang W, Bai H. Ultrahigh Permeability at High Frequencies via A Magnetic-Heterogeneous Nanocrystallization Mechanism in an Iron-Based Amorphous Alloy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304490. [PMID: 37562376 DOI: 10.1002/adma.202304490] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Revised: 07/26/2023] [Indexed: 08/12/2023]
Abstract
The prevalence of wide-bandgap (WBG) semiconductors allows modern electronic devices to operate at much higher frequencies. However, development of soft magnetic materials with high-frequency properties matching the WBG-based devices remains challenging. Here, a promising nanocrystalline-amorphous composite alloy with a normal composition Fe75.5 Co0.5 Mo0.5 Cu1 Nb1.5 Si13 B8 in atomic percent is reported, which is producible under industrial conditions, and which shows an exceptionally high permeability at high frequencies up to 36 000 at 100 kHz, an increase of 44% compared with commercial FeSiBCuNb nanocrystalline alloy (25 000 ± 2000 at 100 kHz), outperforming all existing nanocrystalline alloy systems and commercial soft magnetic materials. The alloy is obtained by a unique magnetic-heterogeneous nanocrystallization mechanism in an iron-based amorphous alloy, which is different from the traditional strategy of nanocrystallization by doping nonmagnetic elements (e.g., Cu and Nb). The induced magnetic inhomogeneity by adding Co atoms locally promotes the formation of highly ordered structures acting as the nuclei of nanocrystals, and Mo atoms agglomerate around the interfaces of the nanocrystals, inhibiting nanocrystal growth, resulting in an ultrafine nanocrystalline-amorphous dual-phase structure in the alloy. The exceptional soft magnetic properties are shown to be closely related to the low magnetic anisotropy and the unique spin rotation mechanism under alternating magnetic fields.
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Affiliation(s)
- Jing Zhou
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Xuesong Li
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- School of Energy Power and Mechanical Engineering, North China Electric Power University, Beijing, 102206, China
| | - Xibei Hou
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Haibo Ke
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Xingdu Fan
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
| | - Junhua Luan
- Department of Materials Science Engineering, College of Science and Engineering, City University of Hong Kong, Hong Kong, 999077, China
| | - Hailong Peng
- School of Materials Science and Engineering, Central South University, 932 South Lushan Rd, Changsha, 410083, China
| | - Qiaoshi Zeng
- Center for High Pressure Science and Technology Advanced Research, Pudong, Shanghai, 201203, China
| | - Hongbo Lou
- Center for High Pressure Science and Technology Advanced Research, Pudong, Shanghai, 201203, China
| | - Jianguo Wang
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Chain Tsuan Liu
- Department of Materials Science Engineering, College of Science and Engineering, City University of Hong Kong, Hong Kong, 999077, China
| | - Baolong Shen
- School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China
| | - Baoan Sun
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Weihua Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China
- School of Energy Power and Mechanical Engineering, North China Electric Power University, Beijing, 102206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haiyang Bai
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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6
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Mukesh N, Márkus BG, Jegenyes N, Bortel G, Bezerra SM, Simon F, Beke D, Gali A. Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide. MICROMACHINES 2023; 14:1517. [PMID: 37630053 PMCID: PMC10456762 DOI: 10.3390/mi14081517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Revised: 07/18/2023] [Accepted: 07/25/2023] [Indexed: 08/27/2023]
Abstract
Silicon carbide (SiC) is a very promising platform for quantum information processing, as it can host room temperature solid state defect quantum bits. These room temperature quantum bits are realized by paramagnetic silicon vacancy and divacancy defects in SiC that are typically introduced by irradiation techniques. However, irradiation techniques often introduce unwanted defects near the target quantum bit defects that can be detrimental for the operation of quantum bits. Here, we demonstrate that by adding aluminum precursor to the silicon and carbon sources, quantum bit defects are created in the synthesis of SiC without any post treatments. We optimized the synthesis parameters to maximize the paramagnetic defect concentrations-including already established defect quantum bits-monitored by electron spin resonance spectroscopy.
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Affiliation(s)
- Nain Mukesh
- Institute of Physics, ELTE Eötvös Loránd University, Egyetem tér 1-3., H-1053 Budapest, Hungary
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
| | - Bence G. Márkus
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Stavropoulos Center for Complex Quantum Matter, Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Department of Physics, Institute of Physics and ELKH-BME Condensed Matter Research Group, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
| | - Nikoletta Jegenyes
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
| | - Gábor Bortel
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
| | - Sarah M. Bezerra
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Department of Physical Chemistry and Materials Science, Faculty of Chemical Technology and Biotechnology, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
| | - Ferenc Simon
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Department of Physics, Institute of Physics and ELKH-BME Condensed Matter Research Group, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
| | - David Beke
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Stavropoulos Center for Complex Quantum Matter, Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Adam Gali
- Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem Rakpart 3., H-1111 Budapest, Hungary
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7
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Chandrasekaran V, Titze M, Flores AR, Campbell D, Henshaw J, Jones AC, Bielejec ES, Htoon H. High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300190. [PMID: 37088736 DOI: 10.1002/advs.202300190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/25/2023] [Indexed: 05/03/2023]
Abstract
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created-a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
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Affiliation(s)
- Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Michael Titze
- Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | | | | | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | | | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
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8
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Wang JF, Liu L, Liu XD, Li Q, Cui JM, Zhou DF, Zhou JY, Wei Y, Xu HA, Xu W, Lin WX, Yan JW, He ZX, Liu ZH, Hao ZH, Li HO, Liu W, Xu JS, Gregoryanz E, Li CF, Guo GC. Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide. NATURE MATERIALS 2023; 22:489-494. [PMID: 36959503 DOI: 10.1038/s41563-023-01477-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Accepted: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Pressure-induced magnetic phase transitions are attracting interest as a means to detect superconducting behaviour at high pressures in diamond anvil cells, but determining the local magnetic properties of samples is a challenge due to the small volumes of sample chambers. Optically detected magnetic resonance of nitrogen vacancy centres in diamond has recently been used for the in situ detection of pressure-induced phase transitions. However, owing to their four orientation axes and temperature-dependent zero-field splitting, interpreting these optically detected magnetic resonance spectra remains challenging. Here we study the optical and spin properties of implanted silicon vacancy defects in 4H-silicon carbide that exhibit single-axis and temperature-independent zero-field splitting. Using this technique, we observe the magnetic phase transition of Nd2Fe14B at about 7 GPa and map the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.6. These results highlight the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures.
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Affiliation(s)
- Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- College of Physics, Sichuan University, Chengdu, China
| | - Lin Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Xiao-Di Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Di-Fan Zhou
- Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Yu Wei
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China
| | - Hai-An Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Wan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Jin-Wei Yan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
| | - Wen Liu
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Eugene Gregoryanz
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
- Centre for Science at Extreme Conditions and School of Physics and Astronomy, University of Edinburgh, Edinburgh, UK.
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
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9
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Quan WK, Liu L, Luo QY, Liu XD, Wang JF. Fiber-integrated silicon carbide silicon-vacancy-based magnetometer. OPTICS LETTERS 2023; 48:1423-1426. [PMID: 36946943 DOI: 10.1364/ol.476305] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Silicon vacancies in silicon carbide have drawn much attention for various types of quantum sensing. However, most previous experiments are realized using confocal scanning systems, which limits their practical applications. In this work, we demonstrate a compact fiber-integrated silicon carbide silicon-vacancy-based magnetometer at room temperature. First, we effectively couple the silicon vacancy in a tiny silicon carbide slice with an optical fiber tip and realize the readout of the spin signal through the fiber at the same time. We then study the optically detected magnetic resonance spectra at different laser and microwave powers, obtaining an optimized magnetic field sensitivity of 12.3 μT/Hz 12. Based on this, the magnetometer is used to measure the strength and polar angle of an external magnetic field. Through these experiments, we have paved the way for fiber-integrated silicon-vacancy-based magnetometer applications in practical environments, such as geophysics and biomedical sensing.
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Lee EMY, Yu A, de Pablo JJ, Galli G. Stability and molecular pathways to the formation of spin defects in silicon carbide. Nat Commun 2021; 12:6325. [PMID: 34732705 PMCID: PMC8566517 DOI: 10.1038/s41467-021-26419-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Accepted: 09/28/2021] [Indexed: 12/18/2022] Open
Abstract
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional theory calculations, we find that VV formation is a thermally activated process that competes with the conversion of silicon (VSi) to carbon monovacancies (VC), and that VV reorientation can occur without dissociation. We also find that increasing the concentration of VSi relative to VC favors the formation of divacancies. Moreover, we identify pathways to create spin defects consisting of antisite-double vacancy complexes and determine their electronic properties. The detailed view of the mechanisms that underpin the formation and dynamics of spin defects presented here may facilitate the realization of qubits in an industrially relevant material.
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Affiliation(s)
- Elizabeth M Y Lee
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Alvin Yu
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
- Institute for Biophysical Dynamics and James Franck Institute, The University of Chicago, Chicago, IL, 60637, USA
| | - Juan J de Pablo
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA.
| | - Giulia Galli
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA.
- Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA.
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11
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Robust coherent control of solid-state spin qubits using anti-Stokes excitation. Nat Commun 2021; 12:3223. [PMID: 34050146 PMCID: PMC8163787 DOI: 10.1038/s41467-021-23471-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2020] [Accepted: 04/30/2021] [Indexed: 11/08/2022] Open
Abstract
Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing. Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.
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12
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Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing. Proc Natl Acad Sci U S A 2021; 118:2021768118. [PMID: 33731479 DOI: 10.1073/pnas.2021768118] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the [Formula: see text], yet fine-tuning the defect-cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the [Formula: see text] optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies. Below-bandgap irradiation at 785-nm and 532-nm wavelengths carried out at times ranging from a few minutes to several hours results in stable enhancement of emission, believed to result from changing the relative ratio of [Formula: see text] ("dark state") to [Formula: see text] ("bright state"). The much faster change effected by 532-nm irradiation may result from cooperative charge-state conversion due to proximal defects. Thermal annealing at 100 °C, carried out over 20 min, also results in emission enhancements and may be explained by the relatively low-activation energy diffusion of carbon interstitials [Formula: see text], subsequently recombining with other defects to create additional [Formula: see text]s. These PCC-enabled experiments reveal insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improved defect-cavity interactions.
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13
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Khramtsov IA, Fedyanin DY. Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P-I-N Diodes: Combining Theory and Experiment. NANO-MICRO LETTERS 2021; 13:83. [PMID: 34138328 PMCID: PMC8006472 DOI: 10.1007/s40820-021-00600-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2020] [Accepted: 01/05/2021] [Indexed: 06/12/2023]
Abstract
HIGHLIGHTS Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon electroluminescence rate and second-order coherence. The developed method is based on the measurements at the single defect level. Therefore, in contrast to other approaches, one point defect is sufficient to measure its electron and hole capture cross sections. ABSTRACT Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods, the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode. GRAPHIC ABSTRACT [Image: see text]
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Affiliation(s)
- Igor A Khramtsov
- Laboratory of Nanooptics and Plasmonics, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Russian Federation
| | - Dmitry Yu Fedyanin
- Laboratory of Nanooptics and Plasmonics, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Russian Federation.
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14
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Anderson CP, Bourassa A, Miao KC, Wolfowicz G, Mintun PJ, Crook AL, Abe H, Ul Hassan J, Son NT, Ohshima T, Awschalom DD. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science 2019; 366:1225-1230. [PMID: 31806809 DOI: 10.1126/science.aax9406] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Accepted: 11/05/2019] [Indexed: 01/15/2023]
Abstract
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.
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Affiliation(s)
- Christopher P Anderson
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Alexandre Bourassa
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Kevin C Miao
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Gary Wolfowicz
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Peter J Mintun
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alexander L Crook
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Jawad Ul Hassan
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Nguyen T Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - David D Awschalom
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA. .,Department of Physics, University of Chicago, Chicago, IL 60637, USA.,Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
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