Millimetre-long transport of photogenerated carriers in topological insulators

Systematic Investigation of the Coupling between One-Dimensional Edge States of a Topological Crystalline Insulator

The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator Pb_{0.7}Sn_{0.3}Se(001) has been studied systematically by scanning tunneling spectroscopy. Our results reveal that the coupling of adjacent edge modes sets in at a step-to-step distance d_{ss}≤25  nm, resulting in a characteristic splitting of a single peak at the Dirac point in tunneling spectra. Whereas the energy splitting exponentially increases with decreasing d_{ss} for single-atomic steps running almost parallel, we find no splitting for single-atomic step edges under an angle of 90°. The results are discussed in terms of overlapping wave functions with p_{x}, p_{y} orbital character.

Transport Modeling of Locally Photogenerated Excitons in Halide Perovskites

Excitons have fundamental impacts on optoelectronic properties of semiconductors. Halide perovskites, with long carrier lifetimes and ionic crystal structures, may support highly mobile excitons because the dipolar nature of excitons suppresses phonon scattering. Inspired by recent experimental progress, we perform device modeling to rigorously analyze exciton formation and transport in methylammonium lead triiodide under local photoexcitation by using a finite element method. Mobile excitons, coexisting with free carriers, can dominate photocurrent generation at low temperatures. The simulation results are in excellent agreement with the experimentally observed strong temperature and gate dependence of carrier diffusion. This work signifies that efficient exciton transport can substantially influence charge transport in the family of perovskite materials.

Topological Charge Pumping in Excitonic Insulators

We show that in excitonic insulators with s-wave electron-hole pairing, an applied electric field (either pulsed or static) can induce a p-wave component to the order parameter, and further drive it to rotate in the s+ip plane, realizing a Thouless charge pump. In one dimension, each cycle of rotation pumps exactly two electrons across the sample. Higher dimensional systems can be viewed as a stack of one-dimensional chains in momentum space in which each chain crossing the Fermi surface contributes a channel of charge pumping. Physics beyond the adiabatic limit, including in particular dissipative effects is discussed.

Adjustable Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbons

Topological insulator (TI) nanoribbons (NRs) provide a platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi₂Se₃ TI NRs, we found that the relative amplitudes of the two quantum oscillations can be tuned by varying the channel length, exhibiting crossover from quasi-ballistic to diffusive transport regimes. The AB and AAS oscillations were discernible even for a 70 μm long channel, while only the AB oscillations were observed for a short channel. Analyses based on ensemble-averaged fast Fourier transform of MC curves revealed exponential temperature dependences of the AB and AAS oscillations, from which the circumferential phase-coherence length and thermal length were obtained. Our observations indicate that the channel length in a TI NR can be a useful control knob for tailored quantum interference oscillations, especially for developing topological hybrid quantum devices.

Temperature and Gate Dependence of Carrier Diffusion in Single Crystal Methylammonium Lead Iodide Perovskite Microstructures

We investigate temperature-dependent photogenerated carrier diffusion in single-crystal methylammonium lead iodide microstuctures via scanning photocurrent microscopy. Carrier diffusion lengths increased abruptly across the tetragonal to orthorhombic phase transition and reached 200 ± 50 μm at 80 K. In combination with the microsecond carrier lifetime measured by a transient photocurrent method, an enormous carrier mobility value of 3 × 10⁴ cm²/V s was extracted at 80 K. The observed highly nonlocal photocurrent and the rapid increase of the carrier diffusion length at low temperatures can be understood by the formation and efficient transport of free excitons in the orthorhombic phase as a result of reduced optical phonon scattering due to the dipolar nature of the excitons. Carrier diffusion lengths were tuned by a factor of 8 by gate voltage and increased with increasing majority carrier (electron) concentration, consistent with the exciton model.