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Wang Y, Du C, Li P, Yang Y, Xiao Y, Ge T, Jiang X, Liu Y, Gao H, Li K, Wang W. Photodetectors Based on ZrS 3/MoS 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:29049-29059. [PMID: 38770760 DOI: 10.1021/acsami.4c03833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
High-performance photodetectors with the detection capability of linearly polarized light have broad applications in both military and civilian fields. Quasi-one-dimensional ZrS3 as an emerging anisotropic two-dimensional material has come under the spotlight owing to its intriguing properties. However, the performance of the ZrS3 photodetector is seriously restricted by its low responsivity. Herein, a novel high-performance photodetector based on the van der Waals ZrS3/MoS2 heterostructure is proposed. Attributed to the charge trapping-assisted photogating effect, interlayer carrier transitions, and fast spatial separation of the photogenerated electron-hole pairs, the device displays superior photoresponse characteristics ranging from the ultraviolet to the visible spectrum in terms of high responsivity up to 212 A/W, an extraordinary external quantum efficiency of 8.5 × 104%, and a prompt rise/decay time of 0.19/0.38 ms. In addition, owing to the profound birefringence and dichroism effects in ZrS3 together with strong light-matter interactions in the heterostructure, profound linear-polarization sensitivity is demonstrated with a dichroic ratio of about 2.8. Overall, this photodetector not only is integrated with the excellent properties of ZrS3 and monolayer MoS2 but also further enhances the advantages through interlayer couplings, which demonstrate the strong potential of the ZrS3-based devices for high-performance, ultrafast, and polarization-sensitive photodetection.
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Affiliation(s)
- Yuge Wang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Changhui Du
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Peipei Li
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yufen Yang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yunfei Xiao
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Tiantian Ge
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Xiaowen Jiang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Yiman Liu
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Honglei Gao
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Kuilong Li
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Wenjia Wang
- International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
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Shen X, Heid R, Hott R, Haghighirad AA, Salzmann B, Dos Reis Cantarino M, Monney C, Said AH, Frachet M, Murphy B, Rossnagel K, Rosenkranz S, Weber F. Precursor region with full phonon softening above the charge-density-wave phase transition in 2H-TaSe 2. Nat Commun 2023; 14:7282. [PMID: 37949889 PMCID: PMC10638379 DOI: 10.1038/s41467-023-43094-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2023] [Accepted: 10/31/2023] [Indexed: 11/12/2023] Open
Abstract
Research on charge-density-wave (CDW) ordered transition-metal dichalcogenides continues to unravel new states of quantum matter correlated to the intertwined lattice and electronic degrees of freedom. Here, we report an inelastic x-ray scattering investigation of the lattice dynamics of the canonical CDW compound 2H-TaSe2 complemented by angle-resolved photoemission spectroscopy and density functional perturbation theory. Our results rule out the formation of a central-peak without full phonon softening for the CDW transition in 2H-TaSe2 and provide evidence for a novel precursor region above the CDW transition temperature TCDW, which is characterized by an overdamped phonon mode and not detectable in our photoemission experiments. Thus, 2H-TaSe2 exhibits structural before electronic static order and emphasizes the important lattice contribution to CDW transitions. Our ab-initio calculations explain the interplay of electron-phonon coupling and Fermi surface topology triggering the CDW phase transition and predict that the CDW soft phonon mode promotes emergent superconductivity near the pressure-driven CDW quantum critical point.
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Affiliation(s)
- Xingchen Shen
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021, Karlsruhe, Germany
- College of Physics, Chongqing University, Chongqing, 401331, P. R. China
| | - Rolf Heid
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021, Karlsruhe, Germany
| | - Roland Hott
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021, Karlsruhe, Germany
| | - Amir-Abbas Haghighirad
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021, Karlsruhe, Germany
| | - Björn Salzmann
- Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, 1700, Fribourg, Switzerland
| | - Marli Dos Reis Cantarino
- Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, 1700, Fribourg, Switzerland
- Instituto de Física, Universidade de São Paulo, São Paulo, São Paulo, 05508-090, Brazil
| | - Claude Monney
- Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, 1700, Fribourg, Switzerland
| | - Ayman H Said
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Mehdi Frachet
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021, Karlsruhe, Germany
| | - Bridget Murphy
- Institute of Experimental and Applied Physics and KiNSIS, Kiel University, 24098, Kiel, Germany
- Ruprecht Haensel Laboratory, Kiel University, 24098, Kiel, Germany
| | - Kai Rossnagel
- Institute of Experimental and Applied Physics and KiNSIS, Kiel University, 24098, Kiel, Germany
- Ruprecht Haensel Laboratory, Kiel University, 24098, Kiel, Germany
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607, Hamburg, Germany
| | - Stephan Rosenkranz
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Frank Weber
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021, Karlsruhe, Germany.
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Chen F, Liu G, Xiao Z, Zhou H, Fei L, Wan S, Liao X, Yuan J, Zhou Y. Quasi-One-Dimensional ZrS 3 Nanoflakes for Broadband and Polarized Photodetection with High Tuning Flexibility. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16999-17008. [PMID: 36947876 DOI: 10.1021/acsami.3c00273] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) layered materials with low crystal symmetries have exhibited unique anisotropic physical properties. Here, we report systematic studies on the photoresponse of field effect transistors (FETs) fabricated using quasi-one-dimensional ZrS3 nanoflakes. The as-fabricated phototransistors exhibit a broadband photocurrent response from ultraviolet to visible regions, where the responsivity and detectivity can be enhanced via additional gate voltages. Furthermore, benefiting from the strong in-plane anisotropy of ZrS3, we observe a gate-voltage and illumination wavelength-dependent polarized photocurrent response, while its sub-millisecond-time response speed is also polarization-dependent. Our results demonstrate the flexible tunability of photodetectors based on anisotropic layered semiconductors, which substantially broadens the application of low symmetry layered materials in polarization-sensitive optoelectronic devices.
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Affiliation(s)
- Feng Chen
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Guangjian Liu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Zhenyang Xiao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Hua Zhou
- School of Physics, Shandong University, Shandanan Street 27, 250100 Jinan, P. R. China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Siyuan Wan
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Xiaxia Liao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Jiaren Yuan
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
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Chen M, Li L, Xu M, Li W, Zheng L, Wang X. Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides. RESEARCH (WASHINGTON, D.C.) 2023; 6:0066. [PMID: 36930809 PMCID: PMC10013805 DOI: 10.34133/research.0066] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 01/12/2023] [Indexed: 01/21/2023]
Abstract
The transition metal trichalcogenides (TMTCs) are quasi-one-dimensional (1D) MX3-type van der Waals layered semiconductors, where M is a transition metal element of groups IV and V, and X indicates chalcogen element. Due to the unique quasi-1D crystalline structures, they possess several novel electrical properties such as variable bandgaps, charge density waves, and superconductivity, and highly anisotropic optical, thermoelectric, and magnetic properties. The study of TMTCs plays an essential role in the 1D quantum materials field, enabling new opportunities in the material research dimension. Currently, tremendous progress in both materials and solid-state devices has been made, demonstrating promising applications in the realization of nanoelectronic devices. This review provides a comprehensive overview to survey the state of the art in materials, devices, and applications based on TMTCs. Firstly, the symbolic structure, current primary synthesis methods, and physical properties of TMTCs have been discussed. Secondly, examples of TMTC applications in various fields are presented, such as photodetectors, energy storage devices, catalysts, and sensors. Finally, we give an overview of the opportunities and future perspectives for the research of TMTCs, as well as the challenges in both basic research and practical applications.
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Affiliation(s)
- Mengdi Chen
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China.,Key Laboratory of Flexible Electronics of Zhejiang Provience, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo 315103, China
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5
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Liu L, Zhu C, Liu ZY, Deng H, Zhou XB, Li Y, Sun Y, Huang X, Li S, Du X, Wang Z, Guan T, Mao H, Sui Y, Wu R, Yin JX, Cheng JG, Pan SH. Thermal Dynamics of Charge Density Wave Pinning in ZrTe_{3}. PHYSICAL REVIEW LETTERS 2021; 126:256401. [PMID: 34241529 DOI: 10.1103/physrevlett.126.256401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2021] [Accepted: 05/19/2021] [Indexed: 06/13/2023]
Abstract
Impurity pinning has long been discussed to have a profound effect on the dynamics of an incommensurate charge density wave (CDW), which would otherwise slide through the lattice without resistance. Here, we visualize the impurity pinning evolution of the CDW in ZrTe_{3} using the variable temperature scanning tunneling microscopy. At low temperatures, we observe a quasi-1D incommensurate CDW modulation moderately correlated to the impurity positions, indicating a weak impurity pinning. As we raise the sample temperature, the CDW modulation gets progressively weakened and distorted, while the correlation with the impurities becomes stronger. Above the CDW transition temperature, short-range modulations persist with the phase almost all pinned by impurities. The evolution from weak to strong impurity pinning through the CDW transition can be understood as a result of losing phase rigidity.
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Affiliation(s)
- Limin Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Changjiang Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Z Y Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Hanbin Deng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - X B Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yuan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yingkai Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiong Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuaishuai Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xin Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheng Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tong Guan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hanqing Mao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Y Sui
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Rui Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jia-Xin Yin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - J-G Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuheng H Pan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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