Millimeters long super flexible Mn5Si3@SiO2 electrical nanocables applicable in harsh environments

Tunable Mechanics and Micromechanism in Close-Knit Silicide-in-SiO2 Core-Shell Nanowires

Bending/tension mechanics is one of the core issues for nanowires in flexible free-standing transport and sensor applications, but it remains a challenge to tailor the mechanical performance beyond the inherent properties. Herein, based on structure engineering, silicon-based Mn₅Si₃@SiO₂ nanocables are proposed and demonstrated as versatile nanosystems. Except for outstanding toughness, large ultimate strain, and great strength, they display diverse mechanical behaviors such as simplex elasticity, plasticity, and viscoelasticity under different external conditions. The tunable performances originate from synergetic effects between the core and shell components, like the atomic bonding transitional interface and space confinement, which induce optimizing internal stress distribution and the dislocation evolution mechanism in the core. The related mechanical performance is revealed carefully. The bending and tension dynamic picture, quantitative force curve, stress-strain dependence, and the corresponding lattice evolution are acquired by in/ex situ characterizations and measurements. These results contribute to nanowire mechanical design and also expand to strain-regulated three-dimensional multifunctional nanosystems.

A Universal Pick-and-Place Assembly for Nanowires

With the introduction of techniques to grow highly functional nanowires of exotic materials and demonstrations of their potential in new applications, techniques for depositing nanowires on functional platforms have been an area of active interest. However, difficulties in handling individual nanowires with high accuracy and reliability have so far been a limiting factor in large-scale integration of high-quality nanowires. Here, a technique is demonstrated to transfer single nanowires reliably on virtually any platform, under ambient conditions. Functional nanowires of InP, AlGaAs, and GeTe on various patterned structures such as electrodes, nanophotonic devices, and even ultrathin transmission electron microscopy (TEM) membranes are transferred. It is shown that the versatility of this technique further enables to perform on-chip nano-optomechanical measurements of an InP nanowire for the first time via evanescent field coupling. Thus, this technique facilitates effortless integration of single nanowires into applications that were previously seen as cumbersome or even impractical, spanning a wide range from TEM studies to in situ electrical, optical, and mechanical characterization.

Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

Mn₅Si₃nanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this context , growing Mn₅Si₃nanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of Mn₅Si₃nanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures. Our calculation allows us, by using the Washburn equation for pore infiltration, to give a guess on why we obtain Mn-rich nanowires. In addition, some morphological aspects of the diameter-modulated Mn₅Si₃nanowires were discussed based on the classical nucleation theory. From the resistivity measurements for the smallest diameter among the nanowires, we observed a significant reduction of around 37% of the phonons characteristic temperature by fitting the Bloch-Grünesein formula with other sources of scattering. Our results lead to a better understanding on the recent metallic flux nanonucleation growth method, as well as going a step further into the electronic transport properties of the Mn₅Si₃nanowires.

Horizontally Self-Standing Growth of Bi2 O2 Se Achieving Optimal Optoelectric Properties

Air-stable 2D Bi₂ O₂ Se material with high carrier mobility appears as a promising semiconductor platform for future micro/nanoelectronics and optoelectronics. Like most 2D materials, Bi₂ O₂ Se 2D nanostructures normally form on atomically flat mica substrates, in which undesirable defects and structural damage from the subsequent transfer process will largely degrade their photoelectronic performance. Here, a new synthesis route involving successive kinetic and thermodynamic processes is proposed to achieve horizontally self-standing Bi₂ O₂ Se nanostructures on SiO₂ /Si substrates. Fewer defects and avoidance of transfer procedure involving corrosive solvents ensure the integrity of the intrinsic lattice and band structures in Bi₂ O₂ Se nanostructures. In contrast to flat structures grown on mica, it displays reduced dark current and improved photoresponse performance (on-off ratio, photoresponsivity, response time, and detectivity). These results indicate a new potential in high-quality 2D electronic nanostructures with optimal optoelectronic functionality.

Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration

The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the I_light /I_dark ratio is improved to 10³ and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.

Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is Mn₅Si₃ nanowires encapsulated in an oxide shell, due to their low reactivity and large flexibility. In this work, we investigate the use of the one-step metallic flux nanonucleation method to easily grow manganese silicide single crystal oxide-protected nanowires by performing their structural and electrical characterization. We find that the fabrication method yields a room-temperature hexagonal crystalline structure with the c-axis along the nanowire. Moreover, the obtained nanowires are metallic at low temperature and low sensitive to a strong external magnetic field. Finally, we observe an unknown electron scattering mechanism for small diameters. In conclusion, the one-step metallic flux nanonucleation method yields intermetallic nanowires suitable for both integration in flexible nanoelectronics as well as low-dimensionality transport experiments.

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.

Abrupt Change Effect of Bandgap Energy on Quantum System of Silicon Nanowire

In the quantum system of Si nanowire (NW), the energy bandgap obviously increases with decreasing radius size of NW, in which the quantum confinement (QC) effect plays a main role. Furthermore, the simulation result demonstrated that the direct bandgap can be obtained as the NW diameter is smaller than 3 nm in Si NW with (001) direction. However, it is discovered in the simulating calculation that the QC effect disappears as the NW diameter arrives at size of monoatomic line, in which its bandgap sharply deceases where the abrupt change effect in bandgap energy occurs near the idea quantum wire. In the experiment, we fabricated the Si NW structure by using annealing and pulsed laser deposition methods, in which a novel way was used to control the radius size of Si NW by confining cylinder space of NW in nanolayer. It should have a good application on optic-electronic waveguide of silicon chip.