1
|
Sun Y, Lin Z, Tian F, Sun B, Zou X, Wang C. Tunable Mechanics and Micromechanism in Close-Knit Silicide-in-SiO 2 Core-Shell Nanowires. NANO LETTERS 2022; 22:9951-9957. [PMID: 36512484 DOI: 10.1021/acs.nanolett.2c03498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Bending/tension mechanics is one of the core issues for nanowires in flexible free-standing transport and sensor applications, but it remains a challenge to tailor the mechanical performance beyond the inherent properties. Herein, based on structure engineering, silicon-based Mn5Si3@SiO2 nanocables are proposed and demonstrated as versatile nanosystems. Except for outstanding toughness, large ultimate strain, and great strength, they display diverse mechanical behaviors such as simplex elasticity, plasticity, and viscoelasticity under different external conditions. The tunable performances originate from synergetic effects between the core and shell components, like the atomic bonding transitional interface and space confinement, which induce optimizing internal stress distribution and the dislocation evolution mechanism in the core. The related mechanical performance is revealed carefully. The bending and tension dynamic picture, quantitative force curve, stress-strain dependence, and the corresponding lattice evolution are acquired by in/ex situ characterizations and measurements. These results contribute to nanowire mechanical design and also expand to strain-regulated three-dimensional multifunctional nanosystems.
Collapse
Affiliation(s)
- Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China
| | - Ziheng Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China
| | - Fei Tian
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China
| | - Bo Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China
| | - Xiaobin Zou
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China
| |
Collapse
|
2
|
Ali UE, Yang H, Khayrudinov V, Modi G, Cheng Z, Agarwal R, Lipsanen H, Bhaskaran H. A Universal Pick-and-Place Assembly for Nanowires. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201968. [PMID: 35938750 DOI: 10.1002/smll.202201968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Revised: 06/06/2022] [Indexed: 06/15/2023]
Abstract
With the introduction of techniques to grow highly functional nanowires of exotic materials and demonstrations of their potential in new applications, techniques for depositing nanowires on functional platforms have been an area of active interest. However, difficulties in handling individual nanowires with high accuracy and reliability have so far been a limiting factor in large-scale integration of high-quality nanowires. Here, a technique is demonstrated to transfer single nanowires reliably on virtually any platform, under ambient conditions. Functional nanowires of InP, AlGaAs, and GeTe on various patterned structures such as electrodes, nanophotonic devices, and even ultrathin transmission electron microscopy (TEM) membranes are transferred. It is shown that the versatility of this technique further enables to perform on-chip nano-optomechanical measurements of an InP nanowire for the first time via evanescent field coupling. Thus, this technique facilitates effortless integration of single nanowires into applications that were previously seen as cumbersome or even impractical, spanning a wide range from TEM studies to in situ electrical, optical, and mechanical characterization.
Collapse
Affiliation(s)
- Utku Emre Ali
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | - He Yang
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing, 100191, China
| | - Vladislav Khayrudinov
- Department of Electronics and Nanoengineering, Aalto University, Espoo, FI-00076, Finland
| | - Gaurav Modi
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Zengguang Cheng
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | - Ritesh Agarwal
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Espoo, FI-00076, Finland
| | - Harish Bhaskaran
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| |
Collapse
|
3
|
Cruz ASE, Campanelli RB, Puydinger Dos Santos MV, Fabris F, Bettini J, Pagliuso PG, Pirota KR. Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity. NANOTECHNOLOGY 2022; 33:475704. [PMID: 35961289 DOI: 10.1088/1361-6528/ac893c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 08/12/2022] [Indexed: 06/15/2023]
Abstract
Mn5Si3nanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this context , growing Mn5Si3nanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of Mn5Si3nanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures. Our calculation allows us, by using the Washburn equation for pore infiltration, to give a guess on why we obtain Mn-rich nanowires. In addition, some morphological aspects of the diameter-modulated Mn5Si3nanowires were discussed based on the classical nucleation theory. From the resistivity measurements for the smallest diameter among the nanowires, we observed a significant reduction of around 37% of the phonons characteristic temperature by fitting the Bloch-Grünesein formula with other sources of scattering. Our results lead to a better understanding on the recent metallic flux nanonucleation growth method, as well as going a step further into the electronic transport properties of the Mn5Si3nanowires.
Collapse
Affiliation(s)
- Alexsandro S E Cruz
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP), Campinas, 13083-859 São Paulo, Brazil
- Brazilian Center for Research in Physics, 22290-180 Rio de Janeiro, Rio de Janeiro, Brazil
| | - Raul B Campanelli
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP), Campinas, 13083-859 São Paulo, Brazil
| | - Marcos V Puydinger Dos Santos
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP), Campinas, 13083-859 São Paulo, Brazil
- School of Electrical and Computer Engineering (FEEC), University of Campinas (UNICAMP), Campinas, 13083-852 São Paulo, Brazil
| | - Fernando Fabris
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP), Campinas, 13083-859 São Paulo, Brazil
| | - Jefferson Bettini
- Brazilian Center for Research in Energy and Materials (CNPEM), Brazilian Nanotechnology National Laboratory (LNNano), Campinas, 13085-903 São Paulo, Brazil
| | - Pascoal G Pagliuso
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP), Campinas, 13083-859 São Paulo, Brazil
| | - Kleber R Pirota
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP), Campinas, 13083-859 São Paulo, Brazil
| |
Collapse
|
4
|
Zou X, Sun Y, Wang C. Horizontally Self-Standing Growth of Bi 2 O 2 Se Achieving Optimal Optoelectric Properties. SMALL METHODS 2022; 6:e2200347. [PMID: 35676223 DOI: 10.1002/smtd.202200347] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2022] [Revised: 05/10/2022] [Indexed: 06/15/2023]
Abstract
Air-stable 2D Bi2 O2 Se material with high carrier mobility appears as a promising semiconductor platform for future micro/nanoelectronics and optoelectronics. Like most 2D materials, Bi2 O2 Se 2D nanostructures normally form on atomically flat mica substrates, in which undesirable defects and structural damage from the subsequent transfer process will largely degrade their photoelectronic performance. Here, a new synthesis route involving successive kinetic and thermodynamic processes is proposed to achieve horizontally self-standing Bi2 O2 Se nanostructures on SiO2 /Si substrates. Fewer defects and avoidance of transfer procedure involving corrosive solvents ensure the integrity of the intrinsic lattice and band structures in Bi2 O2 Se nanostructures. In contrast to flat structures grown on mica, it displays reduced dark current and improved photoresponse performance (on-off ratio, photoresponsivity, response time, and detectivity). These results indicate a new potential in high-quality 2D electronic nanostructures with optimal optoelectronic functionality.
Collapse
Affiliation(s)
- Xiaobin Zou
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| |
Collapse
|
5
|
Liu D, Liu F, Liu Y, Pang Z, Zhuang X, Yin Y, Dong S, He L, Tan Y, Liao L, Chen F, Yang ZX. Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200415. [PMID: 35257494 DOI: 10.1002/smll.202200415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Indexed: 06/14/2023]
Abstract
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the Ilight /Idark ratio is improved to 103 and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.
Collapse
Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Shengpan Dong
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University Changsha, Changsha, 410082, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| |
Collapse
|
6
|
da Cruz ADSE, Puydinger Dos Santos MV, Campanelli RB, Pagliuso PG, Bettini J, Pirota KR, Béron F. Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications. NANOSCALE ADVANCES 2021; 3:3251-3259. [PMID: 36133655 PMCID: PMC9419286 DOI: 10.1039/d0na00809e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2020] [Accepted: 04/15/2021] [Indexed: 05/12/2023]
Abstract
Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is Mn5Si3 nanowires encapsulated in an oxide shell, due to their low reactivity and large flexibility. In this work, we investigate the use of the one-step metallic flux nanonucleation method to easily grow manganese silicide single crystal oxide-protected nanowires by performing their structural and electrical characterization. We find that the fabrication method yields a room-temperature hexagonal crystalline structure with the c-axis along the nanowire. Moreover, the obtained nanowires are metallic at low temperature and low sensitive to a strong external magnetic field. Finally, we observe an unknown electron scattering mechanism for small diameters. In conclusion, the one-step metallic flux nanonucleation method yields intermetallic nanowires suitable for both integration in flexible nanoelectronics as well as low-dimensionality transport experiments.
Collapse
Affiliation(s)
| | | | - Raul B Campanelli
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP) Campinas 13083-859 São Paulo Brazil
| | - Pascoal G Pagliuso
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP) Campinas 13083-859 São Paulo Brazil
| | - Jefferson Bettini
- Brazilian Center for Research in Energy and Materials (CNPEM), Brazilian Nanotechnology National Laboratory (LNNano) Campinas 13085-903 São Paulo Brazil
| | - Kleber R Pirota
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP) Campinas 13083-859 São Paulo Brazil
| | - Fanny Béron
- Institute of Physics Gleb Wataghin (IFGW), University of Campinas (UNICAMP) Campinas 13083-859 São Paulo Brazil
| |
Collapse
|
7
|
Wang Y, Jin S, Wang Q, Wu M, Yao S, Liao P, Kim MJ, Cheng GJ, Wu W. Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties. NANO-MICRO LETTERS 2020; 12:160. [PMID: 34138155 PMCID: PMC7770755 DOI: 10.1007/s40820-020-00493-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2020] [Accepted: 06/22/2020] [Indexed: 05/28/2023]
Abstract
The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.
Collapse
Affiliation(s)
- Yixiu Wang
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Flex Laboratory, Purdue University, West Lafayette, IN, 47907, USA
| | - Shengyu Jin
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Flex Laboratory, Purdue University, West Lafayette, IN, 47907, USA
| | - Qingxiao Wang
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Min Wu
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Flex Laboratory, Purdue University, West Lafayette, IN, 47907, USA
| | - Shukai Yao
- School of Materials Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Peilin Liao
- School of Materials Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Moon J Kim
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Gary J Cheng
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, IN, 47907, USA.
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA.
- Flex Laboratory, Purdue University, West Lafayette, IN, 47907, USA.
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA.
- Regenstrief Center for Healthcare Engineering, Purdue University, West Lafayette, IN, 47907, USA.
| |
Collapse
|
8
|
Abstract
In the quantum system of Si nanowire (NW), the energy bandgap obviously increases with decreasing radius size of NW, in which the quantum confinement (QC) effect plays a main role. Furthermore, the simulation result demonstrated that the direct bandgap can be obtained as the NW diameter is smaller than 3 nm in Si NW with (001) direction. However, it is discovered in the simulating calculation that the QC effect disappears as the NW diameter arrives at size of monoatomic line, in which its bandgap sharply deceases where the abrupt change effect in bandgap energy occurs near the idea quantum wire. In the experiment, we fabricated the Si NW structure by using annealing and pulsed laser deposition methods, in which a novel way was used to control the radius size of Si NW by confining cylinder space of NW in nanolayer. It should have a good application on optic-electronic waveguide of silicon chip.
Collapse
|