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Zhang X, Li X, Cheng Z, Chen A, Wang P, Wang X, Lei X, Bian Q, Li S, Yuan B, Gao J, Li FS, Pan M, Liu F. Large-scale 2D heterostructures from hydrogen-bonded organic frameworks and graphene with distinct Dirac and flat bands. Nat Commun 2024; 15:5934. [PMID: 39009575 PMCID: PMC11250822 DOI: 10.1038/s41467-024-50211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 07/03/2024] [Indexed: 07/17/2024] Open
Abstract
The current strategies for building 2D organic-inorganic heterojunctions involve mostly wet-chemistry processes or exfoliation and transfer, leading to interface contaminations, poor crystallizing, or limited size. Here we show a bottom-up procedure to fabricate 2D large-scale heterostructure with clean interface and highly-crystalline sheets. As a prototypical example, a well-ordered hydrogen-bonded organic framework is self-assembled on the highly-oriented-pyrolytic-graphite substrate. The organic framework adopts a honeycomb lattice with faulted/unfaulted halves in a unit cell, resemble to molecular "graphene". Interestingly, the topmost layer of substrate is self-lifted by organic framework via strong interlayer coupling, to form effectively a floating organic framework/graphene heterostructure. The individual layer of heterostructure inherits its intrinsic property, exhibiting distinct Dirac bands of graphene and narrow bands of organic framework. Our results demonstrate a promising approach to fabricate 2D organic-inorganic heterostructure with large-scale uniformity and highly-crystalline via the self-lifting effect, which is generally applicable to most of van der Waals materials.
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Affiliation(s)
- Xin Zhang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Xiaoyin Li
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Zhengwang Cheng
- School of Science, Hubei University of Technology, Wuhan, 430068, China
| | - Aixi Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Xingyue Wang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Xiaoxu Lei
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Qi Bian
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Shaojian Li
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Bingkai Yuan
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Jianzhi Gao
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China.
| | - Fang-Sen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China.
| | - Minghu Pan
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China.
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA.
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Merces L, Ferro LMM, Nawaz A, Sonar P. Advanced Neuromorphic Applications Enabled by Synaptic Ion-Gating Vertical Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305611. [PMID: 38757653 PMCID: PMC11251569 DOI: 10.1002/advs.202305611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 12/07/2023] [Indexed: 05/18/2024]
Abstract
Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain-like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting-edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low-voltage multi-sensing IGVTs for artificial-synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi-stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi-modal flexible sensor technologies and presents a roadmap for future high-end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.
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Affiliation(s)
- Leandro Merces
- Research Center for MaterialsArchitectures, and Integration of Nanomembranes (MAIN)Chemnitz University of Technology09126ChemnitzGermany
| | - Letícia Mariê Minatogau Ferro
- Research Center for MaterialsArchitectures, and Integration of Nanomembranes (MAIN)Chemnitz University of Technology09126ChemnitzGermany
| | - Ali Nawaz
- Center for Sensors and DevicesBruno Kessler Foundation (FBK)Trento38123Italy
| | - Prashant Sonar
- School of Chemistry and PhysicsQueensland University of Technology (QUT)BrisbaneQLD4000Australia
- Centre for Materials ScienceQueensland University of Technology2 George StreetBrisbaneQLD4000Australia
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Park T, Kim M, Lee EK, Hur J, Yoo H. Overcoming Downscaling Limitations in Organic Semiconductors: Strategies and Progress. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306468. [PMID: 37857588 DOI: 10.1002/smll.202306468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/30/2023] [Indexed: 10/21/2023]
Abstract
Organic semiconductors have great potential to revolutionize electronics by enabling flexible and eco-friendly manufacturing of electronic devices on plastic film substrates. Recent research and development led to the creation of printed displays, radio-frequency identification tags, smart labels, and sensors based on organic electronics. Over the last 3 decades, significant progress has been made in realizing electronic devices with unprecedented features, such as wearable sensors, disposable electronics, and foldable displays, through the exploitation of desirable characteristics in organic electronics. Neverthless, the down-scalability of organic electronic devices remains a crucial consideration. To address this, efforts are extensively explored. It is of utmost importance to further develop these alternative patterning methods to overcome the downscaling challenge. This review comprehensively discusses the efforts and strategies aimed at overcoming the limitations of downscaling in organic semiconductors, with a particular focus on four main areas: 1) lithography-compatible organic semiconductors, 2) fine patterning of printing methods, 3) organic material deposition on pre-fabricated devices, and 4) vertical-channeled organic electronics. By discussing these areas, the full potential of organic semiconductors can be unlocked, and the field of flexible and sustainable electronics can be advanced.
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Affiliation(s)
- Taehyun Park
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Minseo Kim
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Eun Kwang Lee
- Department of Chemical Engineering, Pukyong National University, Busan, 48513, Republic of Korea
| | - Jaehyun Hur
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
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Shukla G, Bisht RS, Kumar P. Predicting the miniaturization limit of vertical organic field effect transistor (VOFET) with perforated graphene as a source electrode. NANOTECHNOLOGY 2023; 35:035201. [PMID: 37820593 DOI: 10.1088/1361-6528/ad0242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 10/11/2023] [Indexed: 10/13/2023]
Abstract
Vertical organic field effect transistors (VOFETs) are of paramount importance due to their fast switching speed, low power consumption, and higher density on a chip compared to lateral OFETs. The low charge carrier mobility in organic semiconductors and longer channel lengths in lateral OFETs lead to higher operating voltages. The channel length in VOFETs can be less than 100 nm which reduces the size of the channel and hence the operating voltages. Another important factor in the operation of VOFETs is the thickness and width of the source electrode. The channel length, source electrode thickness and width sets the miniaturization limit of the VOFETs. The graphene monolayer can be exploited as a source electrode due to its thinness, high carrier mobility, and metallic behaviors. However, for better gate modulation, perforations in the source material are desired. Here, we simulate the VOFET having perforated graphene monolayer as a source electrode and n-type organic semiconductor N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) as an active channel material, while aluminum as a drain electrode to predict the best-miniaturized device. The miniaturization limit of such a VOFET has a limit to the gate opening/perforation in which the minimum source width is 10 nm, as in the sub 10 nm range graphene starts behaving like a semiconductor. The subthreshold swing, deduced from the drain current (JD) versus gate voltage (VG) graph, advocates the limit of the organic semiconductor height/channel length to 50 nm, while 50 nm for the gate.
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Affiliation(s)
- Gaurav Shukla
- Department of Physics, Indian Institute of Technology Bombay, Maharashtra, 400076, India
| | - Ramesh Singh Bisht
- Department of Physics, Indian Institute of Technology Bombay, Maharashtra, 400076, India
| | - Pramod Kumar
- Department of Physics, Indian Institute of Technology Bombay, Maharashtra, 400076, India
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5
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Li T, Bandari VK, Schmidt OG. Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209088. [PMID: 36512432 DOI: 10.1002/adma.202209088] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 11/28/2022] [Indexed: 06/02/2023]
Abstract
Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.
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Affiliation(s)
- Tianming Li
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Vineeth Kumar Bandari
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
- Nanophysics, Dresden University of Technology, 01069, Dresden, Germany
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6
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Jung SH, Yang JS, Cho HK. Ambipolar operation of progressively designed symmetric bidirectional transistors fabricated using single-channel vertical transistor and electrochemically prepared copper oxide. MATERIALS HORIZONS 2023; 10:1373-1384. [PMID: 36744967 DOI: 10.1039/d2mh01413k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, a symmetric bidirectional transistors (SBT) is proposed. The device simultaneously implements the "strong-inversion" and "accumulation" mechanisms of a metal-oxide semiconductor field-effect transistor and TFT, respectively, in different bias directions in a single-channel vertical transistor (V-Tr). This ideal SBT device is designed and fabricated by selecting appropriate materials exhibiting a narrow bandgap and intrinsic characteristics of Sb-doped p-type Cu2O, using a V-Tr to optimize the device structure for high-field-induced short-channel and ambipolar operation, and implementing facile electrochemical deposition for channel and plasma channel treatments. To adopt artificial conductivity control for producing the transporting path of minority electron carriers, the patterned-channel-layer sidewall is locally treated using oxygen plasma, thereby suppressing the minority-carrier self-compensation. The SBT device exhibits an excellent on-current (i.e., symmetric accumulation and strong inversion modes in the p- and n-type channel regions, respectively) and excellent midregion off-current, similar to those of ideal ambipolar transistors. Moreover, owing to multilevel signals and excellent inverter behaviors, the SBT device is suitable for application in complementary-metal-oxide-semiconductors and logic memories.
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Affiliation(s)
- Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Ji Sook Yang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
- Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
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7
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Wu X, Gao C, Chen Q, Yan Y, Zhang G, Guo T, Chen H. High-performance vertical field-effect organic photovoltaics. Nat Commun 2023; 14:1579. [PMID: 36949063 PMCID: PMC10033512 DOI: 10.1038/s41467-023-37174-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Accepted: 03/06/2023] [Indexed: 03/24/2023] Open
Abstract
Limited by the inherent energy loss (Eloss) in carrier transport process, the device efficiency of organic solar cells shows inferior to traditional inorganic photovoltaic devices. Generally, molecular design, morphology optimization and interfacial engineering are usually required to alleviate Eloss. Here, vertical field-effect organic photovoltaic (VFEOPV) by integrating an bulk-heterojunction (BHJ) organic photovoltaic (OPV) with vertical field effect transistor (VFET) is invented, in which VFET generates a large, uneven, internal electric field, eliminating the requirement for driving force to dissociate excitons and prevents non-radiative recombination in OPV. In this way, the performance of solar cell can be well controlled by the gate voltage of VFET and the Eloss of VFEOPVs based on J71: ITIC system is dramatically reduced below 0.2 eV, significantly improving power conversion efficiency (PCE) from 10% to 18% under gate voltage of 0.9 V, which only causes negligible additional power consumption (~10-4mJ/cm2). Besides, the device also exhibits multi-functionality including transistor and phototransistors with excellent photodector performance. This work provides a new and general strategy to improve the OPV performance which is compatible with present optimization methods, and can be applied to improve PCE of other types of solar cells such as Perovskite and inorganic solar cells.
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Affiliation(s)
- Xiaomin Wu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou, 350007, China
| | - Changsong Gao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Yujie Yan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Guocheng Zhang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou, 350108, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China.
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8
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Nawaz A, Merces L, Ferro LMM, Sonar P, Bufon CCB. Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204804. [PMID: 36124375 DOI: 10.1002/adma.202204804] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 09/13/2022] [Indexed: 06/15/2023]
Abstract
The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.
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Affiliation(s)
- Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
| | - Letícia M M Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo, 13083-970, Brazil
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Carlos C B Bufon
- MackGraphe - Graphene and Nanomaterials Research Center, Mackenzie Presbyterian Institute, São Paulo, 01302-907, Brazil
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9
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Shen C, Yin Z, Collins F, Pinna N. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104599. [PMID: 35712776 PMCID: PMC9376853 DOI: 10.1002/advs.202104599] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Revised: 03/23/2022] [Indexed: 06/15/2023]
Abstract
Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.
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Affiliation(s)
- Chengxu Shen
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Zhigang Yin
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of Sciences155 Yangqiao West RoadFuzhouFujian350002China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108China
| | - Fionn Collins
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Nicola Pinna
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
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10
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Yao Y, Chen Y, Wang K, Turetta N, Vitale S, Han B, Wang H, Zhang L, Samorì P. A robust vertical nanoscaffold for recyclable, paintable, and flexible light-emitting devices. SCIENCE ADVANCES 2022; 8:eabn2225. [PMID: 35275715 PMCID: PMC8916739 DOI: 10.1126/sciadv.abn2225] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Accepted: 01/21/2022] [Indexed: 05/31/2023]
Abstract
Organic light-emitting devices are key components for emerging opto- and nanoelectronics applications including health monitoring and smart displays. Here, we report a foldable inverted polymer light-emitting diode (iPLED) based on a self-suspended asymmetrical vertical nanoscaffold replacing the conventional sandwich-like structured LEDs. Our empty vertical-yet-open nanoscaffold exhibits excellent mechanical robustness, proven by unaltered leakage current when applying 1000 cycles of 40-kilopascal pressure loading/unloading, sonication, and folding, with the corresponding iPLEDs displaying a brightness as high as 2300 candela per square meter. By using photolithography and brush painting, arbitrary emitting patterns can be generated via a noninvasive and mask-free process with individual pixel resolution of 10 μm. Our vertical nanoscaffold iPLED can be supported on flexible polyimide foils and be recycled multiple times by washing and refilling with a different conjugated polymer capable of emitting light of different color. This technology combines the traits required for the next generation of high-resolution flexible displays and multifunctional optoelectronics.
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Affiliation(s)
- Yifan Yao
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Yusheng Chen
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Kuidong Wang
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Nicholas Turetta
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Stefania Vitale
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Hanlin Wang
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Lei Zhang
- Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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11
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Jung SH, Yang JS, Kim YB, Deshpande NG, Kim DS, Choi JH, Suh HW, Lee HH, Cho HK. Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability. MATERIALS HORIZONS 2022; 9:1010-1022. [PMID: 34985074 DOI: 10.1039/d1mh01568k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A strategically designed electrodeposition method is proposed for the coating of p-type copper(i) oxide (Cu2O) channels for oxide thin film transistors. To date, conventional p-type oxide semiconductors have revealed a poor mobility and stability and this has obstructed the development of all oxide based logic devices. Furthermore, previous studies on p-type oxide transistors have been limited by the use of a typical planar type configuration. Our Cu2O electrodeposition method designed by incorporating Sb element promotes vertical alignment of the grain boundaries (GBs) and it perfectly coincides with the charge transport direction from the source to the drain in the vertical field effect transistors. These vertically aligned GBs are bundle type GBs and are likely to be ideal for vertical transistors with supreme electrical performances owing to the structurally suppressed grain boundary charge scattering. This alignment of the GBs in the electrodeposited Sb doped Cu2O (Sb:Cu2O) also demonstrates a superior vertical taper profile with conventional wet chemical etching owing to the extremely preferential etching rate along the GBs. Surprisingly, the sidewall formation, with a smooth and steep morphology causes the formation of abrupt and non-defective gate insulator/channel interfaces for superior spacer-free vertical transistors. Consequently, the Cu2O vertical field effect transistors exhibit extraordinary transistor performances of Vth = 0.4 V, μFE = 8 cm2 V-1 s-1, subthreshold swing = 0.24 V dec-1, on/off current ratio = 2 × 108 and qualified electrical and long-term stability characteristics under various environments. To the best of our knowledge, this is the first reported study on an electrodeposited method to design troublesome p-type oxide Cu2O as novel vertical transistors. Finally, power efficient logic inverter circuits with unprecedented performances, such as good noise margins, remarkable gain values of 15.6 (2 VDD) and 62.7 (5 VDD), and high frequency operation up to 10 kHz, are demonstrated using these p-type Cu2O transistors by interconnecting n-type IGZO transistors.
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Affiliation(s)
- Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Ji Sook Yang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Young Been Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | | | - Dong Su Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Ji Hoon Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hee Won Suh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hak Hyeon Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
- Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
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12
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Dahal D, Paudel PR, Kaphle V, Radha Krishnan RK, Lüssem B. Influence of Injection Barrier on Vertical Organic Field Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:7063-7072. [PMID: 35077151 DOI: 10.1021/acsami.1c20382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Organic field-effect transistors (OFETs) have shown great potential for applications that require low temperature deposition on large and flexible substrates. To increase their performance, in particular a high transconductance and transit frequency, the transistor channel length has to be scaled into the submicrometer regime, which can be easily achieved in vertical organic field effect transistors (VOFETs). However, despite high performance observed in VOFETs, these transistors usually suffer from short channel effects like weak saturation of the drain current and direct source-drain leakage resulting in large off currents. Here, we study the influence of the injection barrier at the source electrode on the OFF currents, on/off ratio, and transconductance of vertical OFETs. We use two semiconducting materials, 2,6-diphenyl anthracene (DPA), and C60 to vary the injection barrier at the source electrode and are able to show that increasing the Schottky barrier at the source electrode can decrease the direct source/drain leakage by 3 orders of magnitude. However, the increased injection barrier at the source electrode comes at the expense of an increased contact resistance, which in turn will decrease its transconductance and transit frequency. With the help of a 2D drift-diffusion simulation we show that the trade-off between low off currents and high transconductance is inherent to the current VOFET device setup and that new approaches have to be found to design VOFETs that combine good switching properties with high performance.
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Affiliation(s)
- Drona Dahal
- Department of Physics, Kent State University, Kent, Ohio 44242, United States
| | - Pushpa Raj Paudel
- Department of Physics, Kent State University, Kent, Ohio 44242, United States
| | - Vikash Kaphle
- Department of Physics, Kent State University, Kent, Ohio 44242, United States
| | | | - Björn Lüssem
- Department of Physics, Kent State University, Kent, Ohio 44242, United States
- Institute for Microsensors, -actuators, and -systems (IMSAS), University of Bremen, Bremen 28334, Germany
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13
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Nawaz A, Liu Q, Leong WL, Fairfull-Smith KE, Sonar P. Organic Electrochemical Transistors for In Vivo Bioelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101874. [PMID: 34606146 DOI: 10.1002/adma.202101874] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 07/09/2021] [Indexed: 06/13/2023]
Abstract
Organic electrochemical transistors (OECTs) are presently a focus of intense research and hold great potential in expanding the horizons of the bioelectronics industry. The notable characteristics of OECTs, including their electrolyte-gating, which offers intimate interfacing with biological environments, and aqueous stability, make them particularly suitable to be operated within a living organism (in vivo). Unlike the existing in vivo bioelectronic devices, mostly based on rigid metal electrodes, OECTs form a soft mechanical contact with the biological milieu and ensure a high signal-to-noise ratio because of their powerful amplification capability. Such features make OECTs particularly desirable for a wide range of in vivo applications, including electrophysiological recordings, neuron stimulation, and neurotransmitter detection, and regulation of plant processes in vivo. In this review, a systematic compilation of the in vivo applications is presented that are addressed by the OECT technology. First, the operating mechanisms, and the device design and materials design principles of OECTs are examined, and then multiple examples are provided from the literature while identifying the unique device properties that enable the application progress. Finally, one critically looks at the future of the OECT technology for in vivo bioelectronic applications.
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Affiliation(s)
- Ali Nawaz
- Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, Curitiba, PR, 81531-990, Brazil
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Qian Liu
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
| | - Wei Lin Leong
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Kathryn E Fairfull-Smith
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
- Centre for Biomedical Technologies, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
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14
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Merces L, Candiotto G, Ferro LMM, de Barros A, Batista CVS, Nawaz A, Riul A, Capaz RB, Bufon CCB. Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103897. [PMID: 34596956 DOI: 10.1002/smll.202103897] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2021] [Revised: 08/29/2021] [Indexed: 06/13/2023]
Abstract
Intermolecular electron-transfer reactions are key processes in physics, chemistry, and biology. The electron-transfer rates depend primarily on the system reorganization energy, that is, the energetic cost to rearrange each reactant and its surrounding environment when a charge is transferred. Despite the evident impact of electron-transfer reactions on charge-carrier hopping, well-controlled electronic transport measurements using monolithically integrated electrochemical devices have not successfully measured the reorganization energies to this date. Here, it is shown that self-rolling nanomembrane devices with strain-engineered mechanical properties, on-a-chip monolithic integration, and multi-environment operation features can overcome this challenge. The ongoing advances in nanomembrane-origami technology allow to manufacture the nCap, a nanocapacitor platform, to perform molecular-level charge transport characterization. Thereby, employing nCap, the copper-phthalocyanine (CuPc) reorganization energy is probed, ≈0.93 eV, from temperature-dependent measurements of CuPc nanometer-thick films. Supporting the experimental findings, density functional theory calculations provide the atomistic picture of the measured CuPc charge-transfer reaction. The experimental strategy demonstrated here is a consistent route towards determining the reorganization energy of a system formed by molecules monolithically integrated into electrochemical nanodevices.
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Affiliation(s)
- Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
| | - Graziâni Candiotto
- Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-972, Brazil
- Instituto de Química, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-909, Brazil
| | - Letícia Mariê Minatogau Ferro
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
| | - Anerise de Barros
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
| | - Carlos Vinícius Santos Batista
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Postgraduate Program in Materials Science and Technology, São Paulo State University, Bauru, SP, 17033-360, Brazil
| | - Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Antonio Riul
- Department of Applied Physics, "Gleb Wataghin" Institute of Physics, University of Campinas, Campinas, SP, 13083-859, Brazil
| | - Rodrigo B Capaz
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-972, Brazil
| | - Carlos César Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology, São Paulo State University, Bauru, SP, 17033-360, Brazil
- Mackenzie Presbyterian University, São Paulo, 01302-907, Brazil
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15
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Ferro LMM, Merces L, de Camargo DHS, Bof Bufon CC. Ultrahigh-Gain Organic Electrochemical Transistor Chemosensors Based on Self-Curled Nanomembranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101518. [PMID: 34061409 DOI: 10.1002/adma.202101518] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 03/31/2021] [Indexed: 06/12/2023]
Abstract
Organic electrochemical transistors (OECTs) are technologically relevant devices presenting high susceptibility to physical stimulus, chemical functionalization, and shape changes-jointly to versatility and low production costs. The OECT capability of liquid-gating addresses both electrochemical sensing and signal amplification within a single integrated device unit. However, given the organic semiconductor time-consuming doping process and their usual low field-effect mobility, OECTs are frequently considered low-end category devices. Toward high-performance OECTs, microtubular electrochemical devices based on strain-engineering are presented here by taking advantage of the exclusive shape features of self-curled nanomembranes. Such novel OECTs outperform the state-of-the-art organic liquid-gated transistors, reaching lower operating voltage, improved ion doping, and a signal amplification with a >104 intrinsic gain. The multipurpose OECT concept is validated with different electrolytes and distinct nanometer-thick molecular films, namely, phthalocyanine and thiophene derivatives. The OECTs are also applied as transducers to detect a biomarker related to neurological diseases, the neurotransmitter dopamine. The self-curled OECTs update the premises of electrochemical energy conversion in liquid-gated transistors, yielding a substantial performance improvement and new chemical sensing capabilities within picoliter sampling volumes.
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Affiliation(s)
- Letícia M M Ferro
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
- Institute of Chemistry (IQ), University of Campinas (UNICAMP), Cidade Universitária "Zeferino Vaz", Campinas, 13083-970, Brazil
| | - Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
| | - Davi H S de Camargo
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
| | - Carlos C Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
- Institute of Chemistry (IQ), University of Campinas (UNICAMP), Cidade Universitária "Zeferino Vaz", Campinas, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
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16
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Zhao X, Wang S, Ni Y, Tong Y, Tang Q, Liu Y. High-Performance Full-Photolithographic Top-Contact Conformable Organic Transistors for Soft Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004050. [PMID: 33977061 PMCID: PMC8097323 DOI: 10.1002/advs.202004050] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2020] [Revised: 12/14/2020] [Indexed: 05/11/2023]
Abstract
Organic thin-film transistors (OTFTs) are identified to be the most promising candidate for next-generation wearable and implantable electronics because of their unique advantages including their flexibility, low cost, long-term biocompatibility, and simple packaging. However, commercialization of organic transistors remains an enormous challenge due to their low mobility and lack of scalable strategy for high-precise soft devices. Here, a novel photolithography fabrication strategy is proposed, which is completely compatible with various commercial organic semiconductor materials, for the first demonstration of the fully photolithographic top-contact conformable OTFTs with the device density as high as 1523 transistors cm-2. Excellent electrical and mechanical properties with device yield as high as 100%, field-effect mobility up to 1-2 cm2 V-1 s-1, and outstanding conformability are shown. This work provides a new strategy that can fully maximize the advantages of organic materials and photolithography technology, showing a great prospect in the development of high-performance, high-precise organic devices toward the commercialized and industrialized soft electronic products.
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Affiliation(s)
- Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
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17
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Silva RML, Merces L, Bof Bufon CC. Temperature-Independent Polarization of Ultrathin Phthalocyanine-Based Hybrid Organic/Inorganic Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:29556-29565. [PMID: 32447957 DOI: 10.1021/acsami.0c02067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The combination of organic and inorganic materials at the nanoscale to form functional hybrid structures is a powerful strategy to develop novel electronic devices. The knowledge on semiconductor thin-film polarization brings direct benefits to the hybrid organic/inorganic electronics, becoming primordial for the development of devices such as electromechanical logic gates, solar cells, miniaturized valves, organic diodes, and molecular supercapacitors, among others. Here, we report on the dielectric polarization of ultrathin organic semiconducting films-ca. 5 nm thick metal phthalocyanine ensembles (viz., CuPc, CoPc, F16CuPc)-employed to build up hybrid metal/oxide/molecule heterojunctions. Such hybrid heterostructures are fully integrated into self-rolled nanomembrane-based capacitors and further investigated by impedance spectroscopy measurements as a function of temperature (from 6 to 300 K). The dielectric polarization of the metal phthalocyanines is found to be thermally activated above a specific threshold temperature, which depends on the molecular structure. Below this threshold, the current leakage across the system is suppressed, thus evidencing intrinsic-like polarization mechanisms. The temperature-independent permittivities of the ultrathin molecular films are found to be strongly dependent on the organic/inorganic hybrid interfaces, while the calculated relaxation times are more likely related to each single-molecule polarization. Beyond the advances in determining the temperature dependence of the permittivity for ultrathin phthalocyanine films integrated within solid-state electronics, our results also support the deterministic design of novel functional devices based on nanoscale hybrid organic/inorganic heterojunctions.
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Affiliation(s)
- Ricardo M L Silva
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970 Campinas, São Paulo, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), 17033-360 Bauru, São Paulo, Brazil
| | - Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970 Campinas, São Paulo, Brazil
| | - Carlos C Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970 Campinas, São Paulo, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), 17033-360 Bauru, São Paulo, Brazil
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18
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Sergi Lopes C, Merces L, de Oliveira RF, de Camargo DHS, Bof Bufon CC. Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes. NANOSCALE 2020; 12:10001-10009. [PMID: 32196026 DOI: 10.1039/c9nr10601d] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Organic diodes and molecular rectifiers are fundamental electronic devices that share one common feature: current rectification ability. Since both present distinct spatial dimensions and working principles, the rectification of organic diodes is usually achieved by interface engineering, while changes in molecular structures commonly control the molecular rectifiers' features. Here, we report on the first observation of temperature-driven inversion of the rectification direction (IRD) in ensemble molecular diodes (EMDs) prepared in a vertical stack configuration. The EMDs are composed of 20 nm thick molecular ensembles of copper phthalocyanine in close contact with one of its fluorinated derivatives. The material interface was found to be responsible for modifying the junction's conduction mechanisms from nearly activationless transport to Poole-Frenkel emission and phonon-assisted tunneling. In this context, the current rectification was found to be dependent on the interplay of such distinct charge transport mechanisms. The temperature has played a crucial role in each charge transport transition, which we have investigated via electrical measurements and band diagram analysis, thus providing the fundamentals on the IRD occurrence. Our findings represent an important step towards simple and rational control of rectification in carbon-based electronic nanodevices.
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Affiliation(s)
- Carolina Sergi Lopes
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970, Campinas, São Paulo, Brazil
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Yuvaraja S, Nawaz A, Liu Q, Dubal D, Surya SG, Salama KN, Sonar P. Organic field-effect transistor-based flexible sensors. Chem Soc Rev 2020; 49:3423-3460. [DOI: 10.1039/c9cs00811j] [Citation(s) in RCA: 126] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.
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Affiliation(s)
- Saravanan Yuvaraja
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Ali Nawaz
- Departamento de Física
- Universidade Federal do Paraná
- Caixa Postal 19044
- Curitiba
- Brazil
| | - Qian Liu
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
| | - Deepak Dubal
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
- Centre for Materials Science
| | - Sandeep G. Surya
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Khaled N. Salama
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Prashant Sonar
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
- Centre for Materials Science
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