Hot electrons in a nanowire hard X-ray detector

Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector

Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by performing TCAD simulations. The model is based on solving the basic semiconductor equations for bipolar transistors and considering the effects of charge distribution on the bulk and on the surface. The developed model also takes into consideration the impact of surface traps, which are induced by photogenerated carriers situated at the surface of the nanowire. Further, photogating phenomena and photodoping are also included. Moreover, displacement damage (DD) is also investigated; an issue arises when the detector is exposed to repeated doses. The presented analytical model can predict the current produced from the incident X-ray beam at various energies. The calculation of the gain of the presented nanowire carefully considers the different governing effects at several values of energies as well as biasing voltage and doping. The proposed model is built in MATLAB, and the validity check of the model results is achieved using SILVACO TCAD device simulation. Comparisons between the proposed model results and SILVACO TCAD device simulation are provided and show good agreement.

Off-axis multilayer zone plate with 16 nm × 28 nm focus for high-resolution X-ray beam induced current imaging

Using multilayer zone plates (MZPs) as two-dimensional optics, focal spot sizes of less than 10 nm can be achieved, as we show here with a focus of 8.4 nm × 9.6 nm, but the need for order-sorting apertures prohibits practical working distances. To overcome this issue, here an off-axis illumination of a circular MZP is introduced to trade off between working distance and focal spot size. By this, the working distance between order-sorting aperture and sample can be more than doubled. Exploiting a 2D focus of 16 nm × 28 nm, real-space 2D mapping of local electric fields and charge carrier recombination using X-ray beam induced current in a single InP nanowire is demonstrated. Simulations show that a dedicated off-axis MZP can reach sub-10 nm focusing combined with reasonable working distances and low background, which could be used for in operando imaging of composition, carrier collection and strain in nanostructured devices.

Direct Three-Dimensional Imaging of an X-ray Nanofocus Using a Single 60 nm Diameter Nanowire Device

Nanoscale X-ray detectors could allow higher resolution in imaging and diffraction experiments than established systems but are difficult to design due to the long absorption length of X-rays. Here, we demonstrate X-ray detection in a single nanowire in which the nanowire axis is parallel to the optical axis. In this geometry, X-ray absorption can occur along the nanowire length, while the spatial resolution is limited by the diameter. We use the device to make a high-resolution 3D image of the 88 nm diameter X-ray nanofocus at the Nanomax beamline, MAX IV synchrotron, by scanning the single pixel device in different planes along the optical axis. The images reveal fine details of the beam that are unattainable with established detectors and show good agreement with ptychography.