Near-room temperature ferromagnetic insulating state in highly distorted LaCoO2.5 with CoO5 square pyramids

Resistive Avalanches in La1-xSrxCoO3-δ (x = 0, 0.3) Thin Films and Their Reversible Evolution by Tuning Lattice Oxygen Vacancies (δ)

Strong correlations are often manifested by exotic electronic phases and phase transitions. LaCoO3-δ (LCO) is a system that exhibits such strong electronic correlations with lattice-spin-charge-orbital degrees of freedom. Here, we show that mesoscopic oxygen-deficient LCO films show resistive avalanches of about 2 orders of magnitude due to the metal-insulator transition (MIT) of the film at about 372 K for the 25 W RF power-deposited LCO film on the Si/SiO2 substrate. In bulk, this transition is otherwise gradual and occurs over a very large temperature range. In thin films of LCO, the oxygen deficiency (0 < δ < 0.5) is more easily reversibly tuned, resulting in avalanches. The avalanches disappear after vacuum annealing, and the films behave like normal insulators (δ ∼0.5) with Co2+ in charge ordering alternatively with Co3+. This oxidation state change induces spin state crossovers that result in a spin blockade in the insulating phase, while the conductivity arises from hole hopping among the allowed cobalt Co4+ ion spin states at high temperature. The chemical pressure (strain) of 30% Sr2+ doping at the La3+ site results in reduction in the avalanche magnitude as well as their retention in subsequent heating cycles. The charge nonstoichiometry arising due to Sr2+ doping is found to contribute toward hole doping (i.e., Co3+ oxidation to Co4+) and thereby the retention of the hole percolation pathway. This is also manifested in energies of crossover from the 3D variable range hopping (VRH) type transport observed in the temperature range of 300-425 K, while small polaron hopping (SPH) is observed in the temperature range of 600-725 K for LCO. On the other hand, Sr-doped LCO does not show any crossover and only the VRH type of transport. The strain due to Sr2+ doping refrains the lattice from complete conversion of δ going to 0.5, retaining the avalanches.

Oxygen vacancy chemistry in oxide cathodes

Secondary batteries are a core technology for clean energy storage and conversion systems, to reduce environmental pollution and alleviate the energy crisis. Oxide cathodes play a vital role in revolutionizing battery technology due to their high capacity and voltage for oxide-based batteries. However, oxygen vacancies (OVs) are an essential type of defect that exist predominantly in both the bulk and surface regions of transition metal (TM) oxide batteries, and have a crucial impact on battery performance. This paper reviews previous studies from the past few decades that have investigated the intrinsic and anionic redox-mediated OVs in the field of secondary batteries. We focus on discussing the formation and evolution of these OVs from both thermodynamic and kinetic perspectives, as well as their impact on the thermodynamic and kinetic properties of oxide cathodes. Finally, we offer insights into the utilization of OVs to enhance the energy density and lifespan of batteries. We expect that this review will advance our understanding of the role of OVs and subsequently boost the development of high-performance electrode materials for next-generation energy storage devices.

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

Topological phase transition materials have strong coupling between their charge, spin orbitals, and lattice structure, which makes them have good electrical and magnetic properties, leading to promising applications in the fields of memristive devices. The smaller Gibbs free energy difference between the topological phases, the stable oxygen vacancy ordered structure, and the reversible topological phase transition promote the memristive effect, which is more conducive to its application in information storage, information processing, information calculation, and other related fields. In particular, extracting the current resistance or conductance of the two-terminal memristor to convert to the weight of the synapse in the neural network can simulate the behavior of biological synapses in their structure and function. In addition, in order to improve the performance of memristors and better apply them to neuromorphic computing, methods such as ion doping, electrode selection, interface modulation, and preparation process control have been demonstrated in memristors based on topological phase transition materials. At present, it is considered an effective method to obtain a unique resistive switching behavior by improving the process of preparing functional layers, regulating the crystal phase of topological phase transition materials, and constructing interface barrier-dependent devices. In this review, we systematically expound the resistance switching mechanism, resistance switching performance regulation, and neuromorphic computing of topological phase transition memristors, and provide some suggestions for the challenges faced by the development of the next generation of non-volatile memory and brain-like neuromorphic devices based on topological phase transition materials.

Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO3 thin films

Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO6 octahedral rotations throughout LaCoO3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO3 films while suggesting potential applications toward low-power spintronic devices.

Significantly Enhanced Room-Temperature Ferromagnetism in Multiferroic EuFeO3-δ Thin Films

Regulating the magnetic properties of multiferroics lays the foundation for their prospective application in spintronic devices. Single-phase multiferroics, such as rare-earth ferrites, are promising candidates; however, they typically exhibit weak magnetism at room temperature (RT). Here, we significantly boosted the RT ferromagnetism of a representative ferrite, EuFeO₃, by oxygen defect engineering. Polarized neutron reflectometry and magnetometry measurements reveal that saturation magnetization reaches 0.04 μ_B/Fe, which is approximately 5 times higher than its bulk phase. Combining the annular bright-field images with theoretical assessment, we unravel the underlying mechanism for magnetic enhancement, in which the decrease in Fe-O-Fe bond angles caused by oxygen vacancies (V_O) strengthens magnetic interactions and tilts Fe spins. Furthermore, the internal relationship between magnetism and V_O was established by illustrating how the magnetic structure and magnitude change with V_O configuration and concentration. Our strategy for regulating magnetic properties can be applied to numerous functional oxide materials.

A small-dataset-trained deep learning framework for identifying atoms on transmission electron microscopy images

To accurately identify atoms on noisy transmission electron microscope images, a deep learning (DL) approach is employed to estimate the map of probabilities at each pixel for being an atom with element discernment. Thanks to a delicately-designed loss function and the ability to extract features, the proposed DL networks can be trained by a small dataset created from approximately 30 experimental images, each with a size of 256 × 256 pixels². The accuracy and robustness of the network were verified by resolving the structural defects of graphene and polar structures in PbTiO₃/SrTiO₃ multilayers from both the general TEM images and their imitated images on which intensities of some pixels lost randomly. Such a network has the potential to identify atoms from very few images of beam-sensitive material and explosive images recorded in a dynamical atomic process. The idea of using a small-dataset-trained DL framework to resolve a specific problem may prove instructive for practical DL applications in various fields.

Compressive-Strain-Facilitated Fast Oxygen Migration with Reversible Topotactic Transformation in La0.5Sr0.5CoOx via All-Solid-State Electrolyte Gating

Modifying the crystal structure and corresponding functional properties of complex oxides by regulating their oxygen content has promising applications in energy conversion and chemical looping, where controlling oxygen migration plays an important role. Therefore, finding an efficacious and feasible method to facilitate oxygen migration has become a critical requirement for practical applications. Here, we report a compressive-strain-facilitated oxygen migration with reversible topotactic phase transformation (RTPT) in La_0.5Sr_0.5CoO_x films based on all-solid-state electrolyte gating modulation. With the lattice strain changing from tensile to compressive strain, significant reductions in modulation duration (∼72%) and threshold voltage (∼70%) for the RTPT were observed, indicating great promotion of RTPT by compressive strain. Density functional theory calculations verify that such compressive-strain-facilitated efficient RTPT comes from significant reduction of the oxygen migration barrier in compressive-strained films. Further, ac-STEM, EELS, and sXAS investigations reveal that varying strain from tensile to compressive enhances the Co 3d band filling, thereby suppressing the Co-O hybrid bond in oxygen vacancy channels, elucidating the micro-origin of such compressive-strain-facilitated oxygen migration. Our work suggests that controlling electronic orbital occupation of Co ions in oxygen vacancy channels may help facilitate oxygen migration, providing valuable insights and practical guidance for achieving highly efficient oxygen-migration-related chemical looping and energy conversion with complex oxides.

Deep Eutectic Solvent Synthesis of Perovskite Electrocatalysts for Water Oxidation

Oxide perovskites have attracted great interest as materials for energy conversion due to their stability and structural tunability. La-based perovskites of 3d-transition metals have demonstrated excellent activities as electrocatalysts in water oxidation. Herein, we report the synthesis route to La-based perovskites using an environmentally friendly deep eutectic solvent (DES) consisting of choline chloride and malonic acid. The DES route affords phase-pure crystalline materials on a gram scale and results in perovskites with high electrocatalytic activity for oxygen evolution reaction. A convenient, fast, and scalable synthesis proceeds via assisted metathesis at a lower temperature as compared to traditional solid-state methods. Among LaCoO3, LaMn0.5Ni0.5O3, and LaMnO3 perovskites prepared via the DES route, LaCoO3 was established to be the best-performing electrocatalyst for water oxidation in alkaline medium at 0.25 mg cm-2 mass loading. LaCoO3 exhibits current densities of 10, 50, and 100 mA cm-2 at respective overpotentials of approximately 390, 430, and 470 mV, respectively, and features a Tafel slope of 55.8 mV dec-1. The high activity of LaCoO3 as compared to the other prepared perovskites is attributed to the high concentration of oxygen vacancies in the LaCoO3 lattice, as observed by high-resolution transmission electron microscopy. An intrinsically high concentration of O vacancies in the LaCoO3 synthesized via the DES route is ascribed to the reducing atmosphere attained upon thermal decomposition of the DES components. These findings will contribute to the preparation of highly active perovskites for various energy applications.

Self-healing Growth of LaNiO3 on a Mixed-Terminated Perovskite Surface

Developing atomic-scale synthesis control is a prerequisite for understanding and engineering the exotic physics inherent to transition-metal oxide heterostructures. Thus, far, however, the number of materials systems explored has been extremely limited, particularly with regard to the crystalline substrate, which is routinely SrTiO₃. Here, we investigate the growth of a rare-earth nickelate─LaNiO₃─on (LaAlO₃)(Sr₂AlTaO₆) (LSAT) (001) by oxide molecular beam epitaxy (MBE). Whereas the LSAT substrates are smooth, they do not exhibit the single surface termination usually assumed necessary for control over the interface structure. Performing both nonresonant and resonant anomalous in situ synchrotron surface X-ray scattering during MBE growth, we show that reproducible heterostructures can be achieved regardless of both the mixed surface termination and the layer-by-layer deposition sequence. The rearrangement of the layers occurs dynamically during growth, resulting in the fabrication of high-quality LaNiO₃/LSAT heterostructures with a sharp and consistent interfacial structure. This is due to the thermodynamics of the deposition window as well as the nature of the chemical species at interfaces─here, the flexible charge state of nickel at the oxide surface. This has important implications regarding the use of a wider variety of substrates for fundamental studies on complex oxide synthesis.

Room-Temperature Ferromagnetism at an Oxide-Nitride Interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of the Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via heteroanions has not been explored and the associated quantum states are unknown. Here, we report the successful epitaxial synthesis and characterization of chromium oxide (Cr_{2}O_{3})-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr^{3+} ions via anion-hybridization across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

Dynamics of Anisotropic Oxygen-Ion Migration in Strained Cobaltites

Orientation control of the oxygen vacancy channel (OVC) is highly desirable for tailoring oxygen diffusion as it serves as a fast transport channel in ion conductors, which is widely exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ion hopping toward preferential vacant sites is a key to clarifying migration pathways. Here we report anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in situ thermal activation in atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to the OVC, determine the crucial role of the tolerance factor for OVC stability, and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable to ionic-oxide electronics.

Origin of Insulating Ferromagnetism in Iron Oxychalcogenide Ce_{2}O_{2}FeSe_{2}

An insulating ferromagnetic (FM) phase exists in the quasi-one-dimensional iron oxychalcogenide Ce_{2}O_{2}FeSe_{2}, but its origin is unknown. To understand the FM mechanism, here a systematic investigation of this material is provided, analyzing the competition between ferromagnetic and antiferromagnetic tendencies and the interplay of hoppings, Coulomb interactions, Hund's coupling, and crystal-field splittings. Our intuitive analysis based on second-order perturbation theory shows that large entanglements between doubly occupied and half filled orbitals play a key role in stabilizing the FM order in Ce_{2}O_{2}FeSe_{2}. In addition, via many-body computational techniques applied to a multiorbital Hubbard model, the phase diagram confirms the proposed FM mechanism.