1
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Zhou J, Huang H, Zhao Z, Dou Z, Zhou L, Zhang T, Huang Z, Feng Y, Shi D, Liu N, Yang J, Nie JC, Wang Q, Dong J, Liu Y, Dou R, Xue Q. Homo-Site Nucleation Growth of Twisted Bilayer MoS 2 with Commensurate Angles. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2408227. [PMID: 39072861 DOI: 10.1002/adma.202408227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Indexed: 07/30/2024]
Abstract
Moiré superlattices, composed of two layers of transition metal dichalcogenides with a relative twist angle, provide a novel platform for exploring the correlated electronic phases and excitonic physics. Here, a gas-flow perturbation chemical vapor deposition (CVD) approach is demonstrated to directly grow MoS2 bilayer with versatile twist angles. It is found that the formation of twisted bilayer MoS2 homostructures sensitively depends on the gas-flow perturbation modes, correspondingly featuring the nucleation sites of the second layer at the same (homo-site) as or at the different (hetero-site) from that of the first layer. The commensurate twist angle of ≈22° in homo-site nucleation strategy accounts for ≈16% among the broad range of twist angles due to its low formation energy, which is in consistence with the theoretical calculation. More importantly, moiré interlayer excitons with the enhanced photoluminescence (PL) intensity and the prolonged lifetime are evidenced in the twisted bilayer MoS2 with a commensurate angle of 22°, which is owing to the reason that the strong moiré potential facilitates the interlayer excitons to be trapped in the moiré superlattices. The work provides a feasible route to controllably built twisted MoS2 homostructures with strong moiré potential to investigate the correlated physics in twistronics systems.
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Affiliation(s)
- Jun Zhou
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Haojie Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Zhenglong Dou
- Key Laboratory of Artificial Micro- and Nano-Structures of the Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Li Zhou
- Key Laboratory of Artificial Micro- and Nano-Structures of the Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Tiantian Zhang
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yibiao Feng
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Jian Yang
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - J C Nie
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Ququan Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ruifen Dou
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Qikun Xue
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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2
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Chen Z, Dong X, Sun ZX, An X, Li C, Liu S, Shen J, Wu C, Wang J, Wang Z, Zhu Z, Zhou Y, Yu K, Ma Y, He J, Feng K, He L, Hu Z. Hierarchical Carbon Nanocages as Superior Supports for Photothermal CO 2 Catalysis. ACS NANO 2024. [PMID: 39016025 DOI: 10.1021/acsnano.4c04691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2024]
Abstract
The exploitation of hierarchical carbon nanocages with superior light-to-heat conversion efficiency, together with their distinct structural, morphological, and electronic properties, in photothermal applications could provide effective solutions to long-standing challenges in diverse areas. Here, we demonstrate the discovery of pristine and nitrogen-doped hierarchical carbon nanocages as superior supports for highly loaded, small-sized Ru particles toward enhanced photothermal CO2 catalysis. A record CO production rate of 3.1 mol·gRu-1·h-1 with above 90% selectivity in flow reactors was reached for hierarchical nitrogen-doped carbon-nanocage-supported Ru clusters under 2.4 W·cm-2 illumination without external heating. Detailed studies reveal that the enhanced performance originates from the strong broadband sunlight absorption and efficient light-to-heat conversion of nanocage supports as well as the excellent intrinsic catalytic reactivity of sub-2 nm Ru particles. Our study reveals the great potential of hierarchical carbon nanocages in photothermal catalysis to reduce the fossil fuel consumption of various industrial chemical processes and stimulates interest in their exploitation for other demanding photothermal applications.
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Affiliation(s)
- Zhijie Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Xudong Dong
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Zi-Xuan Sun
- Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Laboratory for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, PR China
| | - Xingda An
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123 Jiangsu, PR China
| | - Chaoran Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Shuang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Jiahui Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Chunpeng Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Jiaqi Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Zidi Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Zhijie Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Yuxuan Zhou
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Kewei Yu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Yueru Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Jiari He
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
| | - Kai Feng
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123 Jiangsu, PR China
| | - Le He
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123 Jiangsu, PR China
| | - Zheng Hu
- Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Laboratory for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, PR China
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3
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Yan S, Huang J, Hao H, Song G, Wang Y, Peng H, Yang T, Zhang J, Tong L. A Resonance-Sensitive Ultralow-Frequency Raman Mode in Twisted Bilayer Graphene. NANO LETTERS 2024; 24:7879-7885. [PMID: 38901023 DOI: 10.1021/acs.nanolett.4c01018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
Twisted bilayer graphene (tBLG) possesses intriguing physical properties including unconventional superconductivity, enhanced light-matter interaction due to the formation of van Hove singularities (vHS), and a divergence of density of states in the electronic band structures. The vHS energy band gap provides optical resonant transition channels that can be tuned by the twist angle and interlayer coupling. Raman spectroscopy provides rich information on the vHS structure of tBLG. Here, we report the discovery of an ultralow-frequency Raman mode at ∼49 cm-1 in tBLG. This mode is assigned to the combination of ZA (an out-of-plane acoustic phonon) and TA (a transverse acoustic phonon) phonons, and the Raman scattering is proposed to occur at the so-called mini-valley. This mode is found to be particularly sensitive to the change in vHS in tBLG. Our findings may deepen the understanding of Raman scattering in tBLG and help to reveal vHS-related electron-phonon interactions in tBLG.
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Affiliation(s)
- Shuowen Yan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Jianqi Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Liaoning Academy of Materials, Shenyang 110167, China
| | - He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Ge Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
- Beijing Graphene Institute, Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
- Beijing Graphene Institute, Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Liaoning Academy of Materials, Shenyang 110167, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
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4
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Li L, Zhang Q, Geng D, Meng H, Hu W. Atomic engineering of two-dimensional materials via liquid metals. Chem Soc Rev 2024; 53:7158-7201. [PMID: 38847021 DOI: 10.1039/d4cs00295d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Hong Meng
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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5
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Liu C, Liu T, Zhang Z, Sun Z, Zhang G, Wang E, Liu K. Understanding epitaxial growth of two-dimensional materials and their homostructures. NATURE NANOTECHNOLOGY 2024; 19:907-918. [PMID: 38987649 DOI: 10.1038/s41565-024-01704-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 05/22/2024] [Indexed: 07/12/2024]
Abstract
The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.
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Affiliation(s)
- Can Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Tianyao Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Quantum Technology Finland Centre of Excellence, Aalto University, Espoo, Finland
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Enge Wang
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
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6
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Xu M, Ji H, Zhang M, Zheng L, Li W, Luo L, Chen M, Liu Z, Gan X, Wang X, Huang W. CVD Synthesis of Twisted Bilayer WS 2 with Tunable Second Harmonic Generation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313638. [PMID: 38328994 DOI: 10.1002/adma.202313638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 01/27/2024] [Indexed: 02/09/2024]
Abstract
The introduction of rotational freedom by twist angles in twisted bilayer (TB) transition metal dichalcogenides (TMDCs) can tailor the inherent properties of the TMDCs, which provides a promising platform to investigate the exotic physical properties. However, direct synthesis of high-quality TB-TMDCs with full twist angles is significantly challenging due to the substantial energy barriers during crystal growth. Here, a modified chemical vapor deposition strategy is proposed to synthesize TB-WS2 with a wide twist angle range from 0° to 120°. Utilizing a tilted SiO2/Si substrate, a gas flow disturbance is generated in the furnace tube to create a heterogeneous concentration gradient of the metal precursor, which provides an extra driving force for the growth of TB-WS2. The Raman and photoluminescence results confirm a weak interlayer coupling of the TB-WS2. High-quality periodic Moiré patterns are observed in the scanning transmission electron microscopy images. Moreover, owing to the strong correlation between the nonlinear optical response and the twisted crystal structure, tunable second harmonic generation behaviors are realized in the TB-WS2. This approach opens up a new avenue for the direct growth of high-crystalline-quality and pristine TB-TMDCs and their potential applications in nonlinear optical devices.
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Affiliation(s)
- Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Hongjia Ji
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Mengdi Chen
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211800, China
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7
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Wu Q, Qian J, Wang Y, Xing L, Wei Z, Gao X, Li Y, Liu Z, Liu H, Shu H, Yin J, Wang X, Peng H. Waveguide-integrated twisted bilayer graphene photodetectors. Nat Commun 2024; 15:3688. [PMID: 38693107 PMCID: PMC11063206 DOI: 10.1038/s41467-024-47925-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Accepted: 04/16/2024] [Indexed: 05/03/2024] Open
Abstract
Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.
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Affiliation(s)
- Qinci Wu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Jun Qian
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Luwen Xing
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
- School of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Ziyi Wei
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Yurui Li
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
| | - Haowen Shu
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Xingjun Wang
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
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8
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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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9
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Yang H, Hu R, Wu H, He X, Zhou Y, Xue Y, He K, Hu W, Chen H, Gong M, Zhang X, Tan PH, Hernández ER, Xie Y. Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning. NANO LETTERS 2024; 24:2789-2797. [PMID: 38407030 PMCID: PMC10921996 DOI: 10.1021/acs.nanolett.3c04815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 02/19/2024] [Accepted: 02/20/2024] [Indexed: 02/27/2024]
Abstract
Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) and the application of a semantic segmentation convolutional neural network (CNN) to accurately and rapidly identify thicknesses of MoS2 flakes. A second CNN model is trained to provide precise predictions on the twist angle of CVD-grown bilayer flakes. This model harnessed a data set comprising over 10,000 synthetic images, encompassing geometries spanning from hexagonal to triangular shapes. Subsequent validation of the deep learning predictions on twist angles was executed through the second harmonic generation and Raman spectroscopy. Our results introduce a scalable methodology for automated inspection of twisted atomically thin CVD-grown bilayers.
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Affiliation(s)
- Haitao Yang
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Ruiqi Hu
- Department
of Materials Science and Engineering, University
of Delaware, Newark, Delaware 19716, United States
| | - Heng Wu
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xiaolong He
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Yan Zhou
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Phonon
Engineering Research Center of Jiangsu Province, School of Physics
and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Yizhe Xue
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Kexin He
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Wenshuai Hu
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Haosen Chen
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Mingming Gong
- School
of Materials Science and Engineering, Northwestern
Polytechnical University, Xi’an 710072, China
| | - Xin Zhang
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ping-Heng Tan
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | | | - Yong Xie
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
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10
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Geohegan DB, Puretzky AA, Xiao K. Growing tunable moiré matter. NATURE MATERIALS 2024; 23:308-309. [PMID: 37580370 DOI: 10.1038/s41563-023-01618-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Affiliation(s)
- David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
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11
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Fortin-Deschênes M, Watanabe K, Taniguchi T, Xia F. Van der Waals epitaxy of tunable moirés enabled by alloying. NATURE MATERIALS 2024; 23:339-346. [PMID: 37580367 DOI: 10.1038/s41563-023-01596-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Accepted: 05/31/2023] [Indexed: 08/16/2023]
Abstract
The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible. While rotationally aligned, lattice-mismatched moirés such as WSe2/WS2 can be synthesized, they lack the critical moiré period tunability, and their formation mechanisms are not well understood. Here, we report the thermodynamically driven van der Waals epitaxy of moirés with a tunable period from 10 to 45 nanometres, using lattice mismatch engineering in two WSSe layers with adjustable chalcogen ratios. Contrary to conventional epitaxy, where lattice-mismatch-induced stress hinders high-quality growth, we reveal the key role of bulk stress in moiré formation and its unique interplay with edge stress in shaping the moiré growth modes. Moreover, the superlattices display tunable interlayer excitons and moiré intralayer excitons. Our studies unveil the epitaxial science of moiré synthesis and lay the foundations for moiré-based technologies.
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Affiliation(s)
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT, USA.
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12
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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13
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Tan Z, Han S, Jia J, Zhu M, Xu H, Mi S, Li K, Wang L, Cheng Z, Chen S. Angle-Resolved Optical Imaging of Interlayer Rotations in Twisted Bilayer Graphene. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10867-10876. [PMID: 38381066 DOI: 10.1021/acsami.3c15839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Twisted bilayer graphene (TBG) is a prototypical layered material whose properties are strongly correlated to interlayer coupling. The two stacked graphene layers with distinct orientations are investigated to generate peculiar optical and electronic phenomena. Thus, the rapid, reliable, and nondestructive twist angle identification technique is of essential importance. Here, we integrated the white light reflection spectra (WLRS), the Raman spectroscopy, and the transmission electron microscope (TEM) to propose a facile RGB optical imaging technique that identified the twist angle of the TBG in a large area intuitively with high efficiency. The RGB technique established a robust correlation between the interlayer rotation angle and the contrast difference in the RGB color channels of a standard optical image. The angle-resolved optical behavior is attributed to the absorption resonance matching with the separation of van Hove singularities in the density of states of the TBG. Our study thus developed a route to identify the rotation angle of stacked bilayer graphene by means of a straightforward optical method, which can be further applied in other stacked van der Waals layered materials.
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Affiliation(s)
- Zuoquan Tan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Shuo Han
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Jiaqi Jia
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Meijie Zhu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Hua Xu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Kai Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Le Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Shanshan Chen
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
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14
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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15
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Qi Y, Sun L, Liu Z. Super Graphene-Skinned Materials: An Innovative Strategy toward Graphene Applications. ACS NANO 2024. [PMID: 38275278 DOI: 10.1021/acsnano.3c11971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Super graphene-skinned materials are emerging members of the graphene composite materials family, which are produced through the high-temperature chemical deposition of continuous graphene layers on traditional engineering materials. The high-performance graphene "skin" endows the traditional engineering materials with additional functionalities, and atomically thin graphene films enter the market by hitching a ride on traditional material carriers. Beyond the physical coating of graphene powders onto engineering materials, the directly grown continuous graphene skin keeps its excellent intrinsic properties to a great extent and holds promise for future applications. Super graphene-skinned material is an innovative pathway for applications of continuous graphene films, which avoids the challenging peeling-transfer process and solves the non-self-supporting issue of ultrathin graphene film. It is a big family, including graphene-skinned powders, fibers, foils, and foams. With further processing and molding, we can obtain graphene-dispersed bulk materials, especially for metal-based graphene-skinned materials, which provides a creative pathway for uniformly dispersing graphene into a metal matrix. In practical applications, graphene-skinned materials would exhibit excellent performance with perfect processing compatibility with current engineering materials and be pushed to real industrial applications relying on the broad market of engineering materials.
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Affiliation(s)
- Yue Qi
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Luzhao Sun
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Zhongfan Liu
- Beijing Graphene Institute (BGI), Beijing 100095, China
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
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16
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Xu M, Ji H, Zheng L, Li W, Wang J, Wang H, Luo L, Lu Q, Gan X, Liu Z, Wang X, Huang W. Reconfiguring nucleation for CVD growth of twisted bilayer MoS 2 with a wide range of twist angles. Nat Commun 2024; 15:562. [PMID: 38233382 PMCID: PMC10794196 DOI: 10.1038/s41467-023-44598-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Accepted: 12/20/2023] [Indexed: 01/19/2024] Open
Abstract
Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS2 with twist angles from 0° to 120°. The twist angles-dependent Moiré periodicity can be clearly observed, and the interlayer coupling shows a strong relationship to the twist angles. Moreover, the yield of TB-MoS2 in bilayer MoS2 and density of TB-MoS2 are significantly improved to 17.2% and 28.9 pieces/mm2 by tailoring gas flow rate and molar ratio of NaCl to MoO3. The proposed reconfiguring nucleation approach opens an avenue for the precise growth of TB-TMDCs for both fundamental research and practical applications.
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Affiliation(s)
- Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Hongjia Ji
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Hanxin Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Qianbo Lu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore, 637553, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211800, P. R. China.
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17
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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18
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Xue X, Liu M, Zhou X, Liu S, Wang L, Yu G. Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2634. [PMID: 37836275 PMCID: PMC10574119 DOI: 10.3390/nano13192634] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 09/14/2023] [Accepted: 09/20/2023] [Indexed: 10/15/2023]
Abstract
The potential applications of multilayer graphene in many fields, such as superconductivity and thermal conductivity, continue to emerge. However, there are still many problems in the growth mechanism of multilayer graphene. In this paper, a simple control strategy for the preparation of interlayer-coupled multilayer graphene on a liquid Cu substrate was developed. By adjusting the flow rate of a carrier gas in the CVD system, the effect for finely controlling the carbon source supply was achieved. Therefore, the carbon could diffuse from the edge of the single-layer graphene to underneath the layer of graphene and then interlayer-coupled multilayer graphene with different shapes were prepared. Through a variety of characterization methods, it was determined that the stacked mode of interlayer-coupled multilayer graphene conformed to AB-stacking structure. The small multilayer graphene domains stacked under single-layer graphene was first found, and the growth process and growth mechanism of interlayer-coupled multilayer graphene with winged and umbrella shapes were studied, respectively. This study reveals the growth mechanism of multilayer graphene grown by using a carbon source through edge diffusion, paving the way for the controllable preparation of multilayer graphene on a liquid Cu surface.
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Affiliation(s)
- Xudong Xue
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Mengya Liu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Liu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liping Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; (X.X.); (M.L.); (X.Z.); (S.L.)
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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19
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Yuan G, Liu W, Huang X, Wan Z, Wang C, Yao B, Sun W, Zheng H, Yang K, Zhou Z, Nie Y, Xu J, Gao L. Stacking transfer of wafer-scale graphene-based van der Waals superlattices. Nat Commun 2023; 14:5457. [PMID: 37674029 PMCID: PMC10482836 DOI: 10.1038/s41467-023-41296-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 08/29/2023] [Indexed: 09/08/2023] Open
Abstract
High-quality graphene-based van der Waals superlattices are crucial for investigating physical properties and developing functional devices. However, achieving homogeneous wafer-scale graphene-based superlattices with controlled twist angles is challenging. Here, we present a flat-to-flat transfer method for fabricating wafer-scale graphene and graphene-based superlattices. The aqueous solution between graphene and substrate is removed by a two-step spinning-assisted dehydration procedure with the optimal wetting angle. Proton-assisted treatment is further used to clean graphene surfaces and interfaces, which also decouples graphene and neutralizes the doping levels. Twist angles between different layers are accurately controlled by adjusting the macroscopic stacking angle through their wafer flats. Transferred films exhibit minimal defects, homogeneous morphology, and uniform electrical properties over wafer scale. Even at room temperature, robust quantum Hall effects are observed in graphene films with centimetre-scale linewidth. Our stacking transfer method can facilitate the fabrication of graphene-based van der Waals superlattices and accelerate functional device applications.
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Affiliation(s)
- Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zihao Wan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bing Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hang Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Kehan Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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20
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Hong HC, Ryu JI, Lee HC. Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2217. [PMID: 37570535 PMCID: PMC10421010 DOI: 10.3390/nano13152217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/24/2023] [Accepted: 07/28/2023] [Indexed: 08/13/2023]
Abstract
Multilayer graphene has attracted significant attention because its physical properties can be tuned by stacking its layers in a particular configuration. To apply the intriguing properties of multilayer graphene in various optoelectronic or spintronic devices, it is essential to develop a synthetic method that enables the control of the stacking configuration. This review article presents the recent progress in the synthesis of multilayer graphene by chemical vapor deposition (CVD). First, we discuss the CVD of multilayer graphene, utilizing the precipitation or segregation of carbon atoms from metal catalysts with high carbon solubility. Subsequently, we present novel CVD approaches to yield uniform and thickness-controlled multilayer graphene, which goes beyond the conventional precipitation or segregation methods. Finally, we introduce the latest studies on the control of stacking configurations in bilayer graphene during CVD processes.
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Affiliation(s)
| | | | - Hyo Chan Lee
- Department of Chemical Engineering, Myongji University, Yongin 17058, Republic of Korea
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21
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Potočnik T, Burton O, Reutzel M, Schmitt D, Bange JP, Mathias S, Geisenhof FR, Weitz RT, Xin L, Joyce HJ, Hofmann S, Alexander-Webber JA. Fast Twist Angle Mapping of Bilayer Graphene Using Spectroscopic Ellipsometric Contrast Microscopy. NANO LETTERS 2023. [PMID: 37289669 DOI: 10.1021/acs.nanolett.3c00619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Twisted bilayer graphene provides an ideal solid-state model to explore correlated material properties and opportunities for a variety of optoelectronic applications, but reliable, fast characterization of the twist angle remains a challenge. Here we introduce spectroscopic ellipsometric contrast microscopy (SECM) as a tool for mapping twist angle disorder in optically resonant twisted bilayer graphene. We optimize the ellipsometric angles to enhance the image contrast based on measured and calculated reflection coefficients of incident light. The optical resonances associated with van Hove singularities correlate well to Raman and angle-resolved photoelectron emission spectroscopy, confirming the accuracy of SECM. The results highlight the advantages of SECM, which proves to be a fast, nondestructive method for characterization of twisted bilayer graphene over large areas, unlocking process, material, and device screening and cross-correlative measurement potential for bilayer and multilayer materials.
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Affiliation(s)
- Teja Potočnik
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Oliver Burton
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Marcel Reutzel
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - David Schmitt
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Jan Philipp Bange
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Stefan Mathias
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - R Thomas Weitz
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Linyuan Xin
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Hannah J Joyce
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Jack A Alexander-Webber
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
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22
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Hao H, Lin ML, Xu B, Wu H, Wang Y, Peng H, Tan PH, Tong L, Zhang J. Enhanced Layer-Breathing Modes in van der Waals Heterostructures Based on Twisted Bilayer Graphene. ACS NANO 2023. [PMID: 37267416 DOI: 10.1021/acsnano.3c00022] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The characterization of interlayer coupling in two-dimensional van der Waals heterostructures (vdWHs) is essential to understand their quantum behaviors and structural functionalities. Interlayer shear and layer-breathing (LB) phonons carry rich information on interlayer interaction, but they are usually too weak to be detected via standard Raman spectroscopy due to the weak electron-phonon coupling (EPC). Here, we report a universal strategy to enhance LB modes of vdWHs based on twisted bilayer graphene (tBLG). In both tBLG/hBN and tBLG/MoS2 vdWHs, the resonantly excited electrons in tBLG can strongly couple to LB phonons extended over the entire layers in the vdWHs, whose resonance condition is tunable by the twist angle of tBLG. In vdWHs containing twisted graphene layers with multiple twisted interfaces, the EPC of LB phonons coming from the collective LB vibrations of entire heterostructure layers can be tuned by resonant excitation of programmable van Hove singularities according to each twisted interface. The universality and tunability of enhanced LB phonons by tBLG make it a promising method to investigate EPC and interlayer interaction in related vdWHs.
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Affiliation(s)
- He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Bo Xu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
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23
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Zhou J, Cui J, Du S, Zhao Z, Guo J, Li S, Zhang W, Liu N, Li X, Bai Q, Guo Y, Mi S, Cheng Z, He L, Nie JC, Yang Y, Dou R. A natural indirect-to-direct band gap transition in artificially fabricated MoS 2 and MoSe 2 flowers. NANOSCALE 2023; 15:7792-7802. [PMID: 37021968 DOI: 10.1039/d3nr00477e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.
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Affiliation(s)
- Jun Zhou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Juan Cui
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Jianfeng Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Songyang Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Xiaotian Li
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - J C Nie
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Yu Yang
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Ruifen Dou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
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24
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Yang L, Cao Z, Yin J, Wang C, Ouyang D, Zhu H, Wang Y, Cavallo L, Alshareef HN, Yin J. Constructing Active BN Sites in Carbon Nanosheets for High-Capacity and Fast Charging Toward Potassium Ion Storage. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300440. [PMID: 36808688 DOI: 10.1002/smll.202300440] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Indexed: 05/18/2023]
Abstract
Nitrogen doping is an effective strategy to improve potassium ion storage of carbon electrodes via the creation of adsorption sites. However, various undesired defects are often uncontrollably generated during the doping process, limiting doping effect on capacity enhancement and deteriorating the electric conductivity. Herein, boron element is additionally introduced to construct 3D interconnected B, N co-doped carbon nanosheets to remedy these adverse effects. This work demonstrates that boron incorporation preferentially converts pyrrolic N species into BN sites with lower adsorption energy barrier, further enhancing the capacity of B, N co-doped carbon. Meanwhile, the electric conductivity is modulated via the conjugation effect between the electron-rich N and electron-deficient B, accelerating the charge-transfer kinetics of potassium ions. The optimized samples deliver a high specific capacity, high rate capability, and long-term cyclic stability (532.1 mAh g-1 at 0.05 A g-1 , 162.6 mAh g-1 at 2 A g-1 over 8000 cycles). Furthermore, hybrid capacitors using the B, N co-doped carbon anode deliver a high energy and power density with excellent cycle life. This study demonstrates a promising approach using BN sites for adsorptive capacity and electric conductivity enhancement in carbon materials for electrochemical energy storage applications.
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Affiliation(s)
- Liuqian Yang
- Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Cao
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jian Yin
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chunyan Wang
- Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dandan Ouyang
- Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China
| | - Hui Zhu
- Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanan Wang
- Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Luigi Cavallo
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jiao Yin
- Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, 830011, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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25
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Li N, Shi R, Li Y, Qi R, Liu F, Zhang X, Liu Z, Li Y, Guo X, Liu K, Jiang Y, Li XZ, Chen J, Liu L, Wang EG, Gao P. Phonon transition across an isotopic interface. Nat Commun 2023; 14:2382. [PMID: 37185918 PMCID: PMC10130007 DOI: 10.1038/s41467-023-38053-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2022] [Accepted: 04/13/2023] [Indexed: 05/17/2023] Open
Abstract
Isotopic mixtures result in distinct properties of materials such as thermal conductivity and nuclear process. However, the knowledge of isotopic interface remains largely unexplored mainly due to the challenges in atomic-scale isotopic identification. Here, using electron energy-loss spectroscopy in a scanning transmission electron microscope, we reveal momentum-transfer-dependent phonon behavior at the h-10BN/h-11BN isotope heterostructure with sub-unit-cell resolution. We find the phonons' energy changes gradually across the interface, featuring a wide transition regime. Phonons near the Brillouin zone center have a transition regime of ~3.34 nm, whereas phonons at the Brillouin zone boundary have a transition regime of ~1.66 nm. We propose that the isotope-induced charge effect at the interface accounts for the distinct delocalization behavior. Moreover, the variation of phonon energy between atom layers near the interface depends on both of momentum transfer and mass change. This study provides new insights into the isotopic effects in natural materials.
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Affiliation(s)
- Ning Li
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Ruochen Shi
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
| | - Yifei Li
- School of Materials Science and Engineering, Peking University, 100871, Beijing, China
| | - Ruishi Qi
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Fachen Liu
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Xiaowen Zhang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
| | - Zhetong Liu
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Yuehui Li
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
| | - Xiangdong Guo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China
| | - Kaihui Liu
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
| | - Ying Jiang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
| | - Xin-Zheng Li
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, 100871, Beijing, China
| | - Ji Chen
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
| | - Lei Liu
- School of Materials Science and Engineering, Peking University, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
| | - En-Ge Wang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
- Songshan Lake Materials Laboratory, 523808, Dongguan, China.
- School of Physics, Shanghai University, 200444, Shanghai, China.
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
- Hefei National Laboratory, 230088, Hefei, China.
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Zhai D, Chen C, Xiao C, Yao W. Time-reversal even charge hall effect from twisted interface coupling. Nat Commun 2023; 14:1961. [PMID: 37029110 PMCID: PMC10082030 DOI: 10.1038/s41467-023-37644-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Accepted: 03/22/2023] [Indexed: 04/09/2023] Open
Abstract
Under time-reversal symmetry, a linear charge Hall response is usually deemed to be forbidden by the Onsager relation. In this work, we discover a scenario for realizing a time-reversal even linear charge Hall effect in a non-isolated two-dimensional crystal allowed by time reversal symmetry. The restriction by Onsager relation is lifted by interfacial coupling with an adjacent layer, where the overall chiral symmetry requirement is fulfilled by a twisted stacking. We reveal the underlying band geometric quantity as the momentum-space vorticity of layer current. The effect is demonstrated in twisted bilayer graphene and twisted homobilayer transition metal dichalcogenides with a wide range of twist angles, which exhibit giant Hall ratios under experimentally practical conditions, with gate voltage controlled on-off switch. This work reveals intriguing Hall physics in chiral structures, and opens up a research direction of layertronics that exploits the quantum nature of layer degree of freedom to uncover exciting effects.
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Affiliation(s)
- Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Chen
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Xiao
- Department of Physics, The University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
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27
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Gu S, Liu W, Mi S, Xian G, Guo J, Pang F, Chen S, Yang H, Gao HJ, Cheng Z. Twist angle-dependent work functions in CVD-grown twisted bilayer graphene probed by Kelvin probe force microscopy. NANOSCALE 2023; 15:5825-5833. [PMID: 36857709 DOI: 10.1039/d2nr07242d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Tailoring the interlayer twist angle of bilayer graphene (BLG) significantly affects its electronic properties, including its superconductivity, topological transitions, ferromagnetic states, and correlated insulating states. These exotic electronic properties are sensitive to the work functions of BLG samples. In this study, the twist angle-dependent work functions of chemical vapour deposition-grown twisted bilayer graphene (tBLG) were investigated in detail using Kelvin probe force microscopy (KPFM) in combination with Raman spectroscopy. The thickness-dependent surface potentials of Bernal-stacked multilayer graphene were measured. It is found that with the increase in the number of layers, the work function decreases and tends to saturate. Bernal-stacked BLG and tBLG were determined via KPFM due to their twist angle-specific surface potentials. The detailed relationship between the twist angle and surface potential was determined via in situ KPFM and Raman spectral measurements. With the increase in the twist angle, the work function of tBLG will increase rapidly and then increase slowly when it is greater than 5°. The thermal stability of tBLG was investigated through a controlled annealing process. tBLG will become Bernal-stacked BLG after annealing at 350 °C. Our work provides the twist angle-dependent surface potentials of tBLG and provides the relevant conditions for the stability of the twist angle, which lays the foundation for further exploration of its twist angle-dependent electronic properties.
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Affiliation(s)
- Shangzhi Gu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
| | - Wenyu Liu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Shuo Mi
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Guoyu Xian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
| | - Jiangfeng Guo
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Fei Pang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Shanshan Chen
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Haitao Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
| | - Hong-Jun Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China.
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28
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Li X, Li Q, Wu A, Li J. CO 2 Induces Symmetry Breaking in Layered Dipeptide Crystals. Angew Chem Int Ed Engl 2023; 62:e202214184. [PMID: 36336663 DOI: 10.1002/anie.202214184] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2022] [Indexed: 11/09/2022]
Abstract
Control of symmetry breaking of materials provides large opportunities to regulate their properties and functions. Herein, we report breaking the symmetry of layered dipeptide crystals by utilizing CO2 to induce the adjacent monomolecular layers to stack from the opposite to the same direction. The role of CO2 is to cover the interlayer interaction sites and force the dipeptides to adsorb at asymmetric positions. Further, the dipeptide crystals exhibit far superior piezoelectricity after symmetry breaking and the piezoelectric voltage generated from the dipeptide-based generators becomes more than 500 % higher than before. This work reveals a potential route to engineer structures and properties of layered materials and provides a deep insight into the control of non-covalent interactions.
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Affiliation(s)
- Xianbao Li
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Lab of Colloid, Interface and Chemical Thermodynamics, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qi Li
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Lab of Colloid, Interface and Chemical Thermodynamics, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, China
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, 100190, Beijing, China
| | - Aoli Wu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Lab of Colloid, Interface and Chemical Thermodynamics, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Junbai Li
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Lab of Colloid, Interface and Chemical Thermodynamics, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
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29
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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30
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Han Z, Wang F, Sun J, Wang X, Tang Z. Recent Advances in Ultrathin Chiral Metasurfaces by Twisted Stacking. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206141. [PMID: 36284479 DOI: 10.1002/adma.202206141] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Revised: 09/22/2022] [Indexed: 06/16/2023]
Abstract
Artificial chiral nanostructures have been subjected to extensive research for their unique chiroptical activities. Planarized chiral films of ultrathin thicknesses are in particular demand for easy on-chip integration and improved energy efficiency as polarization-sensitive metadevices. Recently, controlled twisted stacking of two or more layers of nanomaterials, such as 2D van der Waals materials, ultrathin films, or traditional metasurfaces, at an angle has emerged as a general strategy to introduce optical chirality into achiral solid-state systems. This method endows new degrees of freedom, e.g., the interlayer twist angle, to flexibly engineer and tune the chiroptical responses without having to change the material or the design, thus greatly facilitating the development of multifunctional metamaterials. In this review, recent exciting progress in planar chiral metasurfaces are summarized and discussed from the viewpoints of building blocks, fabrication methods, as well as circular dichroism and modulation thereof in twisted stacked nanostructures. The review further highlights the ever-growing portfolio of applications of these chiral metasurfaces, including polarization conversion, information encryption, chiral sensing, and as an engineering platform for hybrid metadevices. Finally, forward-looking prospects are provided.
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Affiliation(s)
- Zexiang Han
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Fei Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Juehan Sun
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Xiaoli Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhiyong Tang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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31
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Rajarapu R, Barman PK, Yadav R, Biswas R, Devaraj M, Poudyal S, Biswal B, Laxmi V, Pradhan GK, Raghunathan V, Nayak PK, Misra A. Pulsed Carrier Gas Assisted High-Quality Synthetic 3 R-Phase Sword-like MoS 2: A Versatile Optoelectronic Material. ACS NANO 2022; 16:21366-21376. [PMID: 36468945 DOI: 10.1021/acsnano.2c09673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Synthesizing a material with the desired polymorphic phase in a chemical vapor deposition (CVD) process requires a delicate balance among various thermodynamic variables. Here, we present a methodology to synthesize rhombohedral (3R)-phase MoS2 in a well-defined sword-like geometry having lengths up to 120 μm, uniform width of 2-3 μm and thickness of 3-7 nm by controlling the carrier gas flow dynamics from continuous mode to pulsed mode during the CVD growth process. Characteristic signatures such as high degree of circular dichroism (∼58% at 100 K), distinct evolution of low-frequency Raman peaks and increasing intensity of second harmonic signals with increasing number of layers conclusively establish the 3R-phase of the material. A high value (∼844 pm/V) of second-order susceptibility for few-layer-thick MoS2 swords signifies the potential of MoS2 to serve as an atomically thin nonlinear medium. A field effect mobility of 40 cm2/V-s and Ion/Ioff ratio of ∼106 further confirm the electronic-grade standard of this 3R-phase MoS2. These findings are significant for the development of emerging quantum electronic devices utilizing valley-based physics and nonlinear optical phenomena in layered materials.
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Affiliation(s)
- Ramesh Rajarapu
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Prahalad Kanti Barman
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Renu Yadav
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Rabindra Biswas
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Manikandan Devaraj
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Saroj Poudyal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Bubunu Biswal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Vijay Laxmi
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Gopal K Pradhan
- Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha-751024, India
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Abhishek Misra
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
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32
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Wei W, Zhang C, Li H, Pan J, Tan Z, Li Y, Cui Y. In Situ Growth Dynamics of Uniform Bilayer Graphene with Different Twisted Angles Following Layer-by-Layer Mode. J Phys Chem Lett 2022; 13:11201-11207. [PMID: 36445339 DOI: 10.1021/acs.jpclett.2c02767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Synthesis of large-area uniform bilayer graphene (BLG) with different twisted angles has gathered extensive interest but remains a challenge, hindered by the ubiquitous layer-plus-island growth and the uncontrollable layer rotation. Herein, using real-time surface imaging, film uniformity and stacking structures in BLG were well controlled by a two-step carbon segregation on Ni(111) films following the layer-by-layer growth mode. The aligned first graphene layers formed at 850 °C through a thermodynamics-limit process, followed by decreasing temperatures to grow the second layers, eventually enabling the extremely uniform 15°-twisted BLG at 790 °C and AB-stacked BLG at 720 °C, respectively. Essentially, the growth dynamics is perceived to determine that for the different stacking structures, nonaligned second layers are more kinetically preferable than aligned ones at relatively high temperatures, but the case reverses at low temperatures. This work conveys a fundamental dynamic understanding of the controllable integration of uniform BLG and tuning stacking structures.
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Affiliation(s)
- Wei Wei
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, The Chinese Academy of Sciences, Suzhou, 215123, China
| | - Chi Zhang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, The Chinese Academy of Sciences, Suzhou, 215123, China
| | - Haobo Li
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, South Australia 5005, Australia
| | - Jiaqi Pan
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, The Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhen Tan
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, South Australia 5005, Australia
| | - Yajuan Li
- School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Yi Cui
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, The Chinese Academy of Sciences, Suzhou, 215123, China
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33
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Fu Q, Dai J, Huang X, Dai Y, Pan Y, Yang L, Sun Z, Miao T, Zhou M, Zhao L, Zhao W, Han X, Lu J, Gao H, Zhou X, Wang Y, Ni Z, Ji W, Huang Y. One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204247. [PMID: 36104244 PMCID: PMC9661865 DOI: 10.1002/advs.202204247] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Indexed: 06/01/2023]
Abstract
Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2 /Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2 , MoSe2 ) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions.
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Affiliation(s)
- Qiang Fu
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jia‐Qi Dai
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Xin‐Yu Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yun‐Yun Dai
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yu‐Hao Pan
- China North Vehicle Research InstituteBeijing100072P. R. China
| | - Long‐Long Yang
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Zhen‐Yu Sun
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Tai‐Min Miao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Meng‐Fan Zhou
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Lin Zhao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
| | - Wei‐Jie Zhao
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jun‐Peng Lu
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Hong‐Jun Gao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xing‐Jiang Zhou
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Ye‐Liang Wang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Zhen‐Hua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
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34
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Tuning interfacial chemistry with twistronics. TRENDS IN CHEMISTRY 2022. [DOI: 10.1016/j.trechm.2022.07.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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35
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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36
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Gong P, Tang C, Wang B, Xiao T, Zhu H, Li Q, Sun Z. Precise CO 2 Reduction for Bilayer Graphene. ACS CENTRAL SCIENCE 2022; 8:394-401. [PMID: 35355814 PMCID: PMC8949624 DOI: 10.1021/acscentsci.1c01578] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Indexed: 06/04/2023]
Abstract
It is of great significance to explore unique and diverse chemical pathways to convert CO2 into high-value-added products. Bilayer graphene (BLG), with a tunable twist angle and band structure, holds tremendous promise in both fundamental physics and next-generation high-performance devices. However, the π-conjugation and precise two-atom thickness are hindering the selective pathway, through an uncontrolled CO2 reduction and perplexing growth mechanism. Here, we developed a chemical vapor deposition method to catalytically convert CO2 into a high-quality BLG single crystal with a room temperature mobility of 2346 cm2 V-1 s-1. In a finely controlled growth window, the CO2 molecule works as both the carbon source and the oxygen etchant, helping to precisely define the BLG nucleus and set a record growth rate of 300 μm h-1.
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Affiliation(s)
- Peng Gong
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Can Tang
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Boran Wang
- School
of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Taishi Xiao
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Hao Zhu
- School
of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Qiaowei Li
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Zhengzong Sun
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
- School
of Microelectronics, Fudan University, Shanghai 200433, P. R. China
- Yiwu
Research Institute of Fudan University, Yiwu, Zhejiang 322000, P. R. China
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37
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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38
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Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
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39
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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40
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Sun L, Chen B, Wang W, Li Y, Zeng X, Liu H, Liang Y, Zhao Z, Cai A, Zhang R, Zhu Y, Wang Y, Song Y, Ding Q, Gao X, Peng H, Li Z, Lin L, Liu Z. Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils. ACS NANO 2022; 16:285-294. [PMID: 34965103 DOI: 10.1021/acsnano.1c06285] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The epitaxial growth of single-crystal thin films relies on the availability of a single-crystal substrate and a strong interaction between epilayer and substrate. Previous studies have reported the roles of the substrate (e.g., symmetry and lattice constant) in determining the orientations of chemical vapor deposition (CVD)-grown graphene, and Cu(111) is considered as the most promising substrate for epitaxial growth of graphene single crystals. However, the roles of gas-phase reactants and graphene-substrate interaction in determining the graphene orientation are still unclear. Here, we find that trace amounts of oxygen is capable of enhancing the interaction between graphene edges and Cu(111) substrate and, therefore, eliminating the misoriented graphene domains in the nucleation stage. A modified anomalous grain growth method is developed to improve the size of the as-obtained Cu(111) single crystal, relying on strongly textured polycrystalline Cu foils. The batch-to-batch production of A3-size (∼0.42 × 0.3 m2) single-crystal graphene films is achieved on Cu(111) foils relying on a self-designed pilot-scale CVD system. The as-grown graphene exhibits ultrahigh carrier mobilities of 68 000 cm2 V-1 s-1 at room temperature and 210 000 cm2 V-1 s-1 at 2.2 K. The findings and strategies provided in our work would accelerate the mass production of high-quality misorientation-free graphene films.
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Affiliation(s)
- Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing 100095, P. R. China
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Xiongzhi Zeng
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Yu Liang
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Zhenyong Zhao
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Ali Cai
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Rui Zhang
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
| | - Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Yuqing Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Qingjie Ding
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Xuan Gao
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
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41
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Liu M, Wang L, Yu G. Developing Graphene-Based Moiré Heterostructures for Twistronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103170. [PMID: 34723434 PMCID: PMC8728823 DOI: 10.1002/advs.202103170] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.
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Affiliation(s)
- Mengya Liu
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Liping Wang
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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42
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Chan MC, Chen YC, Shiue BH, Tsai TI, Chen CD, Tseng WS. Correlation between the optical absorption and twisted angle of bilayer graphene observed by high-resolution reflectance confocal laser microscopy. OPTICS EXPRESS 2021; 29:40481-40493. [PMID: 34809387 DOI: 10.1364/oe.431305] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2021] [Accepted: 11/04/2021] [Indexed: 06/13/2023]
Abstract
We report a systematic study of the optical absorption of twisted bilayer graphene (tBLG) across a large range of twist angles from 0° to 30° using a high-resolution reflectance confocal laser microscopy (RCLM) system. The high-quality single crystalline tBLG was synthesized via the efficient plasma enhanced chemical vapor deposition techniques without the need of active heating. The sensitivity of acquired images from the RCLM were better than conventional optical microscopes. Although the highest spatial resolution of RCLM is still lower than scanning electron microscopes, it possesses the advantages of beam-damage and vacuum free. Moreover, the high intensity-resolution (sensitivity) images firstly allowed us to distinguish the slight absorption differences and analyze the correlation between the optical absorption and twisted angle of tBLG after data processing procedures. A maximum absorption (minimum transmission) was observed at the stacking angle of tBLG from 10° to 20°, indicating the interplay between the laser and the electron/hole van-Hove singularities when tBLG oriented around the critical angle (θc∼13°). The twisted angle correlated optical absorption paves an alternative way not only to visibly identify the interlayer orientation of tBLG but also to reflect the characterization of the interlayer coupling via its band structure.
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43
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Growing twisted bilayer graphene at small angles. Chem 2021. [DOI: 10.1016/j.chempr.2021.10.018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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44
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Xia R, Jiang S, Chen S, Yang B, Fu J, Yang J, Gao M. Formation of Moiré Superlattices via Surfactant/Nanosheet-Co-mediated Crystallization. J Phys Chem Lett 2021; 12:7901-7907. [PMID: 34382792 DOI: 10.1021/acs.jpclett.1c01735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Moiré superlattices (MSLs) of two-dimensional (2D) van der Waals materials have attracted considerable attention in recent years; however, studies of bottom-up growth of twisted MSL structures via solution-processed crystallization are rarely reported. Through facile one-pot solvothermal synthesis, here we demonstrate a nonclassical surfactant/nanosheet-co-mediated crystallization pathway for formation of MSL structures with two models of SnS2 and SnSe2. Our experimental results reveal that attractive interactions between 2D inorganic building blocks and surfactant organic molecules during the initial stage of crystallization are crucial to drive surfactant-covered nanosheets to crystallize into molecule-intercalated nanosheet aggregates. Under the high-pressure condition, further crystallograpic fusion can occur if the reaction time is prolonged, which alters the interactions of adjacent layers during the coalescence of small-grain-size 2D domains due to insertion of foreign molecules, leading to interlayer rotations. This work uncovers an interesting organic-inorganic cocrystallization growth mode and provides a novel pathway for large-scale fabrication of MSLs.
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Affiliation(s)
- Rui Xia
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Subin Jiang
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Songbo Chen
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Baojuan Yang
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiecai Fu
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiao Yang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, P. R. China
| | - Meizhen Gao
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
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45
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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