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Wang Y, Chen L, Pan Y, Zhang D, Yu S, Wu G, Liu X, Wu L, Shi W, Zhang G, Zhang L, Peng W, Ren J, Wang Z. Geometric Scaling of the Current-Phase Relation of Niobium Nanobridge Junctions. ACS NANO 2023; 17:15466-15473. [PMID: 37573571 DOI: 10.1021/acsnano.3c01301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2023]
Abstract
The nanobridge junction (NBJ) is a type of Josephson junction that is advantageous for the miniaturization of superconducting circuits. However, the current-phase relation (CPR) of the NBJ usually deviates from a sinusoidal function, which has been explained by a simplified model with correlation only to its effective length. Here, we investigated both measured and calculated CPRs of niobium NBJs of a cuboidal shape with a three-dimensional bank structure. From a sine-wave to a sawtooth-like form, we showed that deviated CPRs of NBJs can be described quantitatively by its skewness Δθ. Furthermore, the measured dependence of Δθ on the critical current I0 from 108 NBJs turned out to be consistent with the calculated dependence derived from the change in geometric dimensions. This suggested that the CPRs of NBJs can be tuned by their geometric dimensions. In addition, the calculated scaling behavior of Δθ versus I0 in 3D space was provided for the future design of superconducting circuits of a high integration level by using niobium NBJs.
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Affiliation(s)
- Yue Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lei Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yinping Pan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Denghui Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shujie Yu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangting Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaoyu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Ling Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Weifeng Shi
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Guofeng Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Lu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jie Ren
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, People's Republic of China
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Golod T, Morlet-Decarnin L, Krasnov VM. Word and bit line operation of a 1 × 1 μm 2 superconducting vortex-based memory. Nat Commun 2023; 14:4926. [PMID: 37582835 PMCID: PMC10427686 DOI: 10.1038/s41467-023-40654-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Accepted: 08/01/2023] [Indexed: 08/17/2023] Open
Abstract
The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained. First, we test scalability and demonstrate that the cells can be straightforwardly miniaturized to submicron sizes. Second, we emphasize the importance of conscious geometrical engineering. In the studied devices we introduce an asymmetric easy track for vortex motion and show that it enables a controllable manipulation of vortex states. Finally, we perform a detailed analysis of word and bit line operation of a 1 × 1 μm2 cell. High-endurance, non-volatile operation at zero magnetic field is reported. Remarkably, we observe that the combined word and bit line threshold current is significantly reduced compared to the bare word-line operation. This could greatly improve the selectivity of individual cell addressing in a multi-cell RAM. The achieved one square micron area is an important milestone and a significant step forward towards creation of a dense cryogenic memory.
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Affiliation(s)
- Taras Golod
- Department of Physics, Stockholm University, AlbaNova University Center, SE-10691, Stockholm, Sweden
| | - Lise Morlet-Decarnin
- Department of Physics, Stockholm University, AlbaNova University Center, SE-10691, Stockholm, Sweden
| | - Vladimir M Krasnov
- Department of Physics, Stockholm University, AlbaNova University Center, SE-10691, Stockholm, Sweden.
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Stolyarov VS, Ruzhitskiy V, Hovhannisyan RA, Grebenchuk S, Shishkin AG, Skryabina OV, Golovchanskiy IA, Golubov AA, Klenov NV, Soloviev II, Kupriyanov MY, Andriyash A, Roditchev D. Revealing Josephson Vortex Dynamics in Proximity Junctions below Critical Current. NANO LETTERS 2022; 22:5715-5722. [PMID: 35820103 DOI: 10.1021/acs.nanolett.2c00647] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Made of a thin non-superconducting metal (N) sandwiched by two superconductors (S), SNS Josephson junctions enable novel quantum functionalities by mixing up the intrinsic electronic properties of N with the superconducting correlations induced from S by proximity. Electronic properties of these devices are governed by Andreev quasiparticles (Andreev, A. Sov. Phys. JETP 1965, 20, 1490) which are absent in conventional SIS junctions whose insulating barrier (I) between the two S electrodes owns no electronic states. Here we focus on the Josephson vortex (JV) motion inside Nb-Cu-Nb proximity junctions subject to electric currents and magnetic fields. The results of local (magnetic force microscopy) and global (transport) experiments provided simultaneously are compared with our numerical model, revealing the existence of several distinct dynamic regimes of the JV motion. One of them, identified as a fast hysteretic entry/escape below the critical value of Josephson current, is analyzed and suggested for low-dissipative logic and memory elements.
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Affiliation(s)
- Vasily S Stolyarov
- Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Vsevolod Ruzhitskiy
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Razmik A Hovhannisyan
- Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
| | - Sergey Grebenchuk
- Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
| | - Andrey G Shishkin
- Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Olga V Skryabina
- Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
- Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
| | - Igor A Golovchanskiy
- Advanced Mesoscience and Nanotechnology Centre, Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Alexander A Golubov
- Faculty of Science and Technology, MESA+ Institute of Nanotechnology, 7500 AE Enschede, The Netherlands
| | - Nikolay V Klenov
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | - Igor I Soloviev
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, 119049 Moscow, Russia
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | - Mikhail Yu Kupriyanov
- National University of Science and Technology MISIS, 119049 Moscow, Russia
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | | | - Dimitri Roditchev
- LPEM, ESPCI Paris, PSL Research University, CNRS, 75005 Paris, France
- Sorbonne Universite, CNRS, LPEM, 75005 Paris, France
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