Demonstration of valley anisotropy utilized to enhance the thermoelectric power factor

Exceptional figure of merit achieved in boron-dispersed GeTe-based thermoelectric composites

GeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 Wm-1K-1 at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcm-1K-2 at 300 K). Consequently, we obtain a maximum figure of merit Zmax of 4.0 × 10-3 K-1 at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.

Band Degeneracy and Anisotropy Enhances Thermoelectric Performance from Sb2Si2Te6 to Sc2Si2Te6

The complex interrelationships among thermoelectric parameters mean that a priori design of high-performing materials is difficult. However, band engineering can allow the power factor to be optimized through enhancement of the Seebeck coefficient. Herein, using layered Sb2Si2Te6 and Sc2Si2Te6 as model systems, we comprehensively investigate and compare their thermoelectric properties by employing density functional theory combined with semiclassical Boltzmann transport theory. Our simulations reveal that Sb2Si2Te6 exhibits superior electrical conductivity compared to Sc2Si2Te6 due to lower scattering rates and more pronounced band dispersion. Remarkably, despite Sb2Si2Te6 exhibiting a lower lattice thermal conductivity and superior electrical conductivity, Sc2Si2Te6 is predicted to achieve an extraordinary dimensionless figure of merit (ZT) of 3.51 at 1000 K, which significantly surpasses the predicted maximum ZT of 2.76 for Sb2Si2Te6 at 900 K. We find the origin of this behavior to be a combined increase in band (valley) degeneracy and anisotropy upon switching the conduction band orbital character from Sb p to Sc d, yielding a significantly improved Seebeck coefficient. This work suggests that enhancing band degeneracy and anisotropy (complexity) through compositional variation is an effective strategy for improving the thermoelectric performance of layered materials.

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.

Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition

We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.

Thermoelectric nanowires for dense 3D printed architectures

The large-scale employment of 3D printed inorganic thermoelectrics is primarily constrained because of their lower efficiencies as compared to those fabricated from conventional methods such as spark plasma sintering and hot-pressing. This originates from the significant challenge in the densification of printed parts, particularly through the direct-ink-writing fabrication process, which demands a high binder content for printability. To achieve high-density printed thermoelectrics, the ink formulation process often involves the addition of substantial filler content and sintering aids, coupled with prolonged sintering periods. Here, we propose a strategy to resolve the low densification issue of 3D printed thermoelectrics through a binder-less and sintering aid-free thermoelectric nanowire ink system that can achieve dense thermoelectric structures (up to 82.5% theoretical density). The increase in density and corresponding enhancement of thermoelectric material efficiency are attained in a more tunable and controlled manner without compromising the material composition. A high filler-derived density index (FDI) of 2.51 is also achieved, implying the potential to obtain high-density parts with minimal filler content, thus unlocking a cascade of profound impacts. Crucially, this advancement enables the possibilities of anisotropic engineering in thermoelectric materials, thereby shattering the limitations that have hindered the widespread adoption of 3D printed inorganic thermoelectrics.

Enhanced Thermoelectric Performance of Mg-Sn Thin Films: Role of Mg9Sn5 Phase and One-Dimensional Electronic Structure

Mg-Sn alloy thin films have garnered significant attention for their outstanding thermoelectric (TE) properties and cost-effective elemental composition, making them potential candidates for wearable energy harvesting devices. While previous studies have explored the properties of these thin films, limited research has been conducted to identify physical factors that can further enhance their performance. In this study, we present a novel approach utilizing a convenient electron beam coevaporation technique to fabricate Mg-Sn alloy thin films. Experimental results revealed that controlling the tin content in the Mg-Sn thin films at 38.9% led to the formation of a mixed-phase structure, comprising Mg2Sn and Mg9Sn5. This dual-phase structure exhibited a notable advantage in enhancing the TE performance. The presence of the Mg9Sn5 phase significantly increased the carrier concentration, while maintaining the original Seebeck coefficient and mobility, thereby improving the conductivity of Mg2Sn. Theoretical calculations indicated that the Mg9Sn5 phase displayed 1D-like characteristics, leading to a highly effective valley degeneracy and consequently a high power factor. Overall, this work introduces a promising approach to fabricate high-performance Mg-Sn alloy thin films through electron beam coevaporation, opening up possibilities for their application in wearable energy harvesting devices.

Mechanism of Thermoelectric Performance Enhancement in CaMg2 Bi2 -Based Materials with Different Cation Site Doping

Chemical bonds determine electron and phonon transport in solids. Tailoring chemical bonding in thermoelectric materials causes desirable or compromise thermoelectric transport properties. In this work, taking an example of CaMg2 Bi2 with covalent and ionic bonds, density functional theory calculations uncover that element Zn, respectively, replacing Ca and Mg sites cause the weakness of ionic and covalent bonding. Electrically, Zn doping at both Ca and Mg sites increases carrier concentration, while the former leads to higher carrier concentration than that of the latter because of its lower vacancy formation energy. Both doping types increase density-of-state effective mass but their mechanisms are different. The Zn doping Ca site induces resonance level in valence band and Zn doping Mg site promotes orbital alignment. Thermally, point defect and the change of phonon dispersion introduced by doping result in pronounced reduction of lattice thermal conductivity. Finally, combining with the further increase of carrier concentration caused by Na doping and the modulation of band structure and the decrease of lattice thermal conductivity caused by Ba doping, a high figure-of-merit ZT of 1.1 at 823 K in Zn doping Ca sample is realized, which is competitive in 1-2-2 Zintl phase thermoelectric systems.

Opening the Bandgap of Metallic Half-Heuslers via the Introduction of d-d Orbital Interactions

Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d-d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance. The width of the bandgap can be engineered by tuning the strength of the d-d orbital interactions. The conduction type and the carrier density can also be modulated in the Mg1- x Tix NiSb system. Both improved n-type and p-type thermoelectric properties are realized, which are much higher than that of the metallic MgNiSb. The proposed bandgap opening strategy can be employed to design and develop new half-Heusler semiconductors for functional and energy applications.

Enhanced Thermoelectric Performance and Low Thermal Conductivity in Cu2GeTe3 with Identified Localized Symmetry Breakdown

Highly efficient and eco-friendly thermoelectric generators rely on low-cost and nontoxic semiconductors with high symmetry and ultralow lattice thermal conductivity κ_L. We report the rational synthesis of the novel cubic (Ag, Se)-doped Cu₂GeTe₃ semiconductors. A localized symmetry breakdown (LSB) was found in the composition of Cu_1.9Ag_0.1GeTe_1.5Se_1.5 (i.e., CAGTS15) with an ultralow κ_L of 0.37 W/mK at 723 K, the lowest value outperforming all Cu₂GeCh₃ (Ch = S, Se, and Te). A joint investigation of synchrotron X-ray techniques identifies the LSB embedded into the cubic CAGTS15 host matrix. This LSB is an Ångström-scale orthorhombic symmetry unit, characteristic of multiple bond lengths, large anisotropic atomic displacements, and distinct local chemical coordination of anions. Computational results highlight that such an unusual orthorhombic symmetry demonstrates low-frequency phonon modes, which become softer and more predominant with increasing temperatures. This unconventional LSB promotes bond complexity and phonon scattering, highly beneficial for extraordinarily low lattice thermal conductivity.

A quasi-one-dimensional bulk thermoelectrics with high performance near room temperature

Pursuing efficient thermoelectricity from low-dimensional materials has been highly motivated since the seminal work of Hicks and Dresselhaus. In fact, many superior thermoelectric materials like Bi₂Te₃, Mg₃Sb₂/Mg₃Bi₂ and SnSe are quasi-two-dimensional (q2D), though the advantages of two-dimensionality appear to be diverse and sometimes controversial. Here, we report on a remarkably high thermoelectric performance in TlCu₃Te₂, which is quasi-one-dimensional (q1D) with a further reduced dimension. The thermoelectric figure of merit zT along its q1D axis amounts to 1.3 (1.5) at 300 (400) K, rivaling the best ever reported at these temperatures. The high thermoelectric performances benefit from, on one hand, large power factors derived from a center-hollowed, pancake-like Fermi pocket with q1D dispersion at the edge of a narrow band gap, and on the other hand, small lattice thermal conductivities caused by the large and anharmonic q1D lattice consisting of heavy, lone-pair-electron bearing (Tl⁺) and weakly-bonded (Cu⁺) ions. This compound represents the first bulk material with quasi-uniaxial thermoelectric transport of application level, offering a renewed opportunity to exploit reduced dimensionality for high-performance thermoelectricity.

Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors

Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi-2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi-2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron-phonon coupling strength mediated by phonons with purely out-of-plane vibrational vectors. This is demonstrated in ZrBeSi-type quasi-2D systems, where the representative sample Ba_1.01 AgSb shows a high room-temperature hole mobility of 344 cm² V^-1 S^-1 , a record value among quasi-2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p-type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi-type compounds. This work uncovers the relation between electron-phonon coupling and crystal symmetry in quasi-2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications.

Silver Atom Off-Centering in Diamondoid Solid Solutions Causes Crystallographic Distortion and Suppresses Lattice Thermal Conductivity

The class I-III-VI₂ diamondoid compounds with tetrahedral bonding are important semiconductors widely applied in optoelectronics. Understanding their heat transport properties and developing an effective method to predict the diamondoid solid solutions' thermal conductivity will help assess their impact as thermoelectrics. In this work, we investigated in detail the heat transport properties of CuGa_1-xIn_xTe₂ and Cu_1-xAg_xGaTe₂ and found that in the Ag-alloyed solid solutions, the Ag atom off-centering effect results in crystallographic distortion and extra strong acoustic-optical phonon scattering and an extremely low lattice thermal conductivity. Moreover, we integrate the alloy scattering and the off-centering effect with the crystallographic distortion parameter to develop a modified Klemens model that predicts the thermal conductivity of diamondoid solid solutions. Finally, we demonstrate that Cu_1-xAg_xGaTe₂ solid solutions are promising p-type thermoelectric materials, with a maximum ZT of 1.23 at 850 K for Cu_0.58Ag_0.4GaTe₂.

Nonstoichiometric Salt Intercalation as a Means to Stabilize Alkali Doping of 2D Materials

Although doping with alkali atoms is a powerful technique for introducing charge carriers into physical systems, the resulting charge-transfer systems are generally not air stable. Here we describe computationally a strategy towards increasing the stability of alkali-doped materials that employs stoichiometrically unbalanced salt crystals with excess cations (which could be deposited during, e.g., in situ gating) to achieve doping levels similar to those attained by pure alkali metal doping. The crystalline interior of the salt crystal acts as a template to stabilize the excess dopant atoms against oxidation and deintercalation, which otherwise would be highly favorable. We characterize this doping method for graphene, NbSe_{2}, and Bi_{2}Se_{3} and its effect on direct-to-indirect band gap transitions, 2D superconductivity, and thermoelectric performance. Salt intercalation should be generally applicable to systems which can accommodate this "ionic crystal" doping (and particularly favorable when geometrical packing constraints favor nonstoichiometry).

Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials

GeTe is a promising mid-temperature thermoelectric compound but inevitably contains excessive Ge vacancies hindering its performance maximization. This work reveals that significant enhancement in the dimensionless figure of merit (ZT) could be realized by defect structure engineering from point defects to line and plane defects of Ge vacancies. The evolved defects including dislocations and nanodomains enhance phonon scattering to reduce lattice thermal conductivity in GeTe. The accumulation of cationic vacancies toward the formation of dislocations and planar defects weakens the scattering against electronic carriers, securing the carrier mobility and power factor. This synergistic effect on electronic and thermal transport properties remarkably increases the quality factor. As a result, a maximum ZT > 2.3 at 648 K and a record-high average ZT (300-798 K) were obtained for Bi_0.07Ge_0.90Te in lead-free GeTe-based compounds. This work demonstrates an important strategy for maximizing the thermoelectric performance of GeTe-based materials by engineering the defect structures, which could also be applied to other thermoelectric materials.

The intrinsic high-concentration Ge vacancies in GeTe-based thermoelectric materials hinder their performance maximization. Here, the authors find that defect structure engineering strategy is effective for performance enhancement.

Functional-Unit-Based Material Design: Ultralow Thermal Conductivity in Thermoelectrics with Linear Triatomic Resonant Bonds

We demonstrate the use of functional-unit-based material design for thermoelectrics. This is an efficient approach for identifying high-performance thermoelectric materials, based on the use of combinations of functional fragments relevant to desired properties. Here, we reveal that linear triatomic resonant bonds (LTRBs) found in some Zintl compounds provide strong anisotropy both structurally and electronically, along with strong anharmonic phonon scattering. An LTRB is thus introduced as a functional unit, and compounds are then screened as potential thermoelectric materials. We identify 17 semiconducting candidates from the MatHub-3d database that contain LTRBs. Detailed transport calculations demonstrate that the LTRB-containing compounds not only have considerably lower lattice thermal conductivities than other compounds with similar average atomic masses, but also exhibit remarkable band anisotropy near the valence band maximums due to the LTRB. K₅CuSb₂ is adopted as an example to elucidate the fundamental correlation between the LTRB and thermoelectric properties. The [Sb-Cu-Sb]^5- resonant structures demonstrate the delocalized Sb-Sb interaction within each LTRB, resulting in the softening of TA phonons and leading to large anharmonicity. The low lattice thermal conductivity (0.39 W/m·K at 300 K) combined with the band anisotropy results in a high thermoelectric figure of merit (ZT) for K₅CuSb₂ of 1.3 at 800 K. This work is a case study of the functional-unit-based material design for the development of novel thermoelectric materials.

Giant Thermoelectric Power Factor Anisotropy in PtSb1.4Sn0.6

We report on the giant anisotropy found in the thermoelectric power factor (S²σ) of marcasite structure-type PtSb_1.4Sn_0.6 single crystal. PtSb_1.4Sn_0.6, synthesized using an ambient pressure flux growth method upon mixing Sb and Sn on the same atomic site, is a new phase different from both PtSb₂ and PtSn₂, which crystallize in the cubic Pa3̅ pyrite and Fm3̅m fluorite unit cell symmetry, respectively. The large difference in S²σ for heat flow applied along different principal directions of the orthorhombic unit cell stems mostly from anisotropic Seebeck coefficients.

Enhancement of the Thermoelectric Performance of Cu2GeSe3 via Isoelectronic (Ag, S)-co-substitution

Recently, ternary Cu-based Cu-IV-Se (IV = Sb, Ge, and Sn) compounds have received extensive attention in the thermoelectric field. Compared with Cu-Sb-Se and Cu-Sn-Se, Cu-Ge-Se compounds have been less studied due to its poor Seebeck coefficient and high thermal conductivity. Here, the Cu₂GeSe₃ material with high electrical conductivity was first prepared, and then, its effective mass was increased by doping with S, which led to the Seebeck coefficient of the doped sample being 1.93 times higher than that of pristine Cu₂GeSe₃ at room temperature. Moreover, alloying Ag at the Cu site in the Cu₂GeSe_2.96S_0.04 sample could further cause a 5.16 times increase in the Seebeck coefficient at room temperature, and the lattice thermal conductivity was remarkably decreased because of the introduction of the dislocations in the Cu₂GeSe₃ sample. Finally, benefitted from the high Seebeck coefficient and low thermal conductivity, a record high ZT = 0.9 at 723 K was obtained for the Cu_1.85Ag_0.15GeSe_2.96S_0.04 sample, which increased 345% in comparison with the pristine Cu₂GeSe₃, and it is among the highest reported values for Cu₂GeSe₃-based thermoelectric.

Highly oriented platinum/iridium thin films for high-temperature thermocouples with superior precision

The long-term precise high-temperature measurement of thin-film thermocouples (TFTCs) has attracted attention due to the capability of instantaneous temperature detection. However, related technologies have seen slow development, and there is no one standard TFTC yet. Here, we focus on a new strategy of reducing alloys for the easy preparation and performance enhancement of TFTCs via nanostructure and interface design. To this end, we fabricated a platinum/iridium (Pt/Ir) pure-element TFTC with a well matched interface and few defects, which demonstrated excellent long-term service stability over a high-temperature range. The corresponding polynomial fitting coefficients were ≥0.99999, indicating the accurate acquisition of temperature data. A reduced deviation (<0.21%) between three calibration cycles was obtained over a wide temperature range of 300 °C to 1000 °C, which is better than the maximum precision of a standard wire thermocouple. Superior properties are achieved because of the resulting fewer defects in the Pt and Ir thin films with highly preferential orientation along the (111) plane. The results indicate that our Pt/Ir TFTCs have significant potential for application in many domains such as thermal detection, microelectronics and aero-engines.

Defect governed zinc-rich columnar AZO thin film and contact interface for enhanced performance of thermocouples

The research on the stable thermoelectric properties and contact interface of high-precision thin-film thermocouples lags far behind the demand. In this study, a zinc-rich Al-doped ZnO (AZO) thin film was fabricated, in which the carriers were mainly donated by the Al dopant, and the oxygen defects migrated together, forming cage defects. Then, an indium tin oxide (ITO)/AZO thin-film thermocouple was prepared. It had a special temperature-dependent voltage curve due to the effects of cage defects on the thermoelectric properties of the AZO thin film and interfacial electron diffusion. When the zinc atoms in the cage defects were excited after annealing, a linear relationship between the temperature and voltage was obtained. The Seebeck coefficient of the thermocouple was constant at 168 μV K^-1 over the entire measured temperature range. In addition, the calculated error of the thermocouple was lower than 1% from 50 °C to 500 °C, showing good repeatability. These results showed that defect engineering could effectively be used to improve the temperature range stability of thermoelectric materials and optimize the precision of thin-film thermocouples.

Doping Achieves High Thermoelectric Performance in SnS: A First-Principles Study

Among the thermoelectrics discovered in the past few decades, SnS stands out as a promising candidate for its inexpensive, earth-abundant, and environment-friendly merits. However, with emerging research on optimizing the thermoelectric performance of SnS, there are not many theoretical studies giving explicit analysis about the underlying mechanism of charge and heat transport in the system. In this work, we find an abnormal optical-phonon-dominated κ_L in SnS with heat-carrying optical phonons showing higher group velocity than acoustic phonons. These high-velocity phonon modes are contributed by "antiphase" movements in the adjacent Sn-S sublayers. Meanwhile, we calculate the electrical properties with a nonempirical carrier lifetime and discover that the optical phonon also plays an essential role in the charge transport process, limiting the carrier mobility dominantly. Our calculation results suggest that p-type SnS can achieve a maximal ZT of 1.68 at 850 K and a hole concentration of 5.5 × 10¹⁹ cm^-3 even without band engineering. We further investigate 11 possible dopants and screen out 4 candidates (Na, K, Tl, and Ag) that effectively boost the hole concentration in SnS. Defect calculations reveal that Na is the best dopant for SnS, while we also suggest K and Tl as potential candidates, for they can also help SnS achieve its optimal hole concentration. To ensure that each dopant reaches its best doping effect, we suggest that doped SnS samples be synthesized under sulfur-excess circumstances and the synthesis temperature be higher than 1353 K. Our findings provide insight into the charge and heat transport process of SnS and pave the way for the rational design of high-performance SnS-based thermoelectric materials.