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Cheng E, Yan L, Shi X, Lou R, Fedorov A, Behnami M, Yuan J, Yang P, Wang B, Cheng JG, Xu Y, Xu Y, Xia W, Pavlovskii N, Peets DC, Zhao W, Wan Y, Burkhardt U, Guo Y, Li S, Felser C, Yang W, Büchner B. Tunable positions of Weyl nodes via magnetism and pressure in the ferromagnetic Weyl semimetal CeAlSi. Nat Commun 2024; 15:1467. [PMID: 38368411 PMCID: PMC10874455 DOI: 10.1038/s41467-024-45658-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Accepted: 01/30/2024] [Indexed: 02/19/2024] Open
Abstract
The noncentrosymmetric ferromagnetic Weyl semimetal CeAlSi with simultaneous space-inversion and time-reversal symmetry breaking provides a unique platform for exploring novel topological states. Here, by employing multiple experimental techniques, we demonstrate that ferromagnetism and pressure can serve as efficient parameters to tune the positions of Weyl nodes in CeAlSi. At ambient pressure, a magnetism-facilitated anomalous Hall/Nernst effect (AHE/ANE) is uncovered. Angle-resolved photoemission spectroscopy (ARPES) measurements demonstrated that the Weyl nodes with opposite chirality are moving away from each other upon entering the ferromagnetic phase. Under pressure, by tracing the pressure evolution of AHE and band structure, we demonstrate that pressure could also serve as a pivotal knob to tune the positions of Weyl nodes. Moreover, multiple pressure-induced phase transitions are also revealed. These findings indicate that CeAlSi provides a unique and tunable platform for exploring exotic topological physics and electron correlations, as well as catering to potential applications, such as spintronics.
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Affiliation(s)
- Erjian Cheng
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany.
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany.
| | - Limin Yan
- Center for High Pressure Science and Technology Advanced Research, 201203, Shanghai, China
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, 130012, Changchun, China
| | - Xianbiao Shi
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, 150001, Harbin, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China
| | - Rui Lou
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany.
- Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, 12489, Berlin, Germany.
- Joint Laboratory "Functional Quantum Materials" at BESSY II, 12489, Berlin, Germany.
| | - Alexander Fedorov
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, 12489, Berlin, Germany
- Joint Laboratory "Functional Quantum Materials" at BESSY II, 12489, Berlin, Germany
| | - Mahdi Behnami
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany
| | - Jian Yuan
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Pengtao Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Bosen Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Jin-Guang Cheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yuanji Xu
- Institute for Applied Physics, University of Science and Technology Beijing, 100083, Beijing, China
| | - Yang Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Nikolai Pavlovskii
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01069, Dresden, Germany
| | - Darren C Peets
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01069, Dresden, Germany
| | - Weiwei Zhao
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, 150001, Harbin, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China
| | - Yimin Wan
- State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Ulrich Burkhardt
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Shiyan Li
- State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research, 201203, Shanghai, China.
| | - Bernd Büchner
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany.
- Institute of Solid State and Materials Physics and Würzburg-Dresden Cluster of Excellence-ct.qmat, Technische Universität Dresden, 01062, Dresden, Germany.
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Liu WL, Zhang X, Nie SM, Liu ZT, Sun XY, Wang HY, Ding JY, Jiang Q, Sun L, Xue FH, Huang Z, Su H, Yang YC, Jiang ZC, Lu XL, Yuan J, Cho S, Liu JS, Liu ZH, Ye M, Zhang SL, Weng HM, Liu Z, Guo YF, Wang ZJ, Shen DW. Spontaneous Ferromagnetism Induced Topological Transition in EuB_{6}. PHYSICAL REVIEW LETTERS 2022; 129:166402. [PMID: 36306743 DOI: 10.1103/physrevlett.129.166402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Revised: 08/09/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
The interplay between various symmetries and electronic bands topology is one of the core issues for topological quantum materials. Spontaneous magnetism, which leads to the breaking of time-reversal symmetry, has been proven to be a powerful approach to trigger various exotic topological phases. In this Letter, utilizing the combination of angle-resolved photoemission spectroscopy, magneto-optical Kerr effect microscopy, and first-principles calculations, we present the direct evidence on the realization of the long-sought spontaneous ferromagnetism induced topological transition in soft ferromagnetic EuB_{6}. Explicitly, we reveal the topological transition is from Z_{2}=1 topological insulator in paramagnetic state to χ=1 magnetic topological semimetal in low temperature ferromagnetic state. Our results demonstrate that the simple band structure near the Fermi level and rich topological phases make EuB_{6} an ideal platform to study the topological phase physics.
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Affiliation(s)
- W L Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - X Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - S M Nie
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
| | - Z T Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - X Y Sun
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - H Y Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - J Y Ding
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Q Jiang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - L Sun
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - F H Xue
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Z Huang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - H Su
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Y C Yang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Z C Jiang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - X L Lu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - J Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Soohyun Cho
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - J S Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Z H Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - M Ye
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - S L Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - H M Weng
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Z Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Y F Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Z J Wang
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - D W Shen
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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