Designing light-element materials with large effective spin-orbit coupling

Sulphur-atom positional engineering in perylenimide: structure-property relationships and H-aggregation directed type-I photodynamic therapy

An innovative design strategy of placing sulfur (S)-atoms within the pendant functional groups and at carbonyl positions in conventional perylenimide (PNI-O) has been demonstrated to investigate the condensed state structure-property relationship and potential photodynamic therapy (PDT) application. Incorporation of simply S-atoms at the peri-functionalized perylenimide (RPNI-O) leads to an aggregation-induced enhanced emission luminogen (AIEEgen), 2-hexyl-8-(thianthren-1-yl)-1H-benzo[5,10]anthra[2,1,9-def]isoquinoline-1,3(2H)-dione (API), which achieves a remarkable photoluminescence quantum yield (Φ PL) of 0.85 in aqueous environments and established novel AIE mechanisms. Additionally, substitution of the S-atom at the carbonyl position in RPNI-O leads to thioperylenimides (RPNI-S): 2-hexyl-8-phenyl-1H-benzo[5,10]anthra[2,1,9-def]isoquinoline-1,3(2H)-dithione (PPIS), 8-([2,2'-bithiophen]-5-yl)-2-hexyl-1H-benzo[5,10]anthra[2,1,9-def]isoquinoline-1,3(2H)-dithione (THPIS), and 2-hexyl-8-(thianthren-1-yl)-1H-benzo[5,10]anthra[2,1,9-def]isoquinoline-1,3(2H)-dithion (APIS), with distinct photophysical properties (enlarged spin-orbit coupling (SOC) and Φ PL ≈ 0.00), and developed diverse potent photosensitizers (PSs). The present work provides a novel SOC enhancement mechanism via pronounced H-aggregation. Surprisingly, the lowest singlet oxygen quantum yield (Φ Δ) and theoretical calculation suggest the specific type-I PDT for RPNI-S. Interestingly, RPNI-S efficiently produces superoxide (O2˙-) due to its remarkably lower Gibbs free energy (ΔG) values (THPIS: -40.83 kcal mol-1). The non-toxic and heavy-atom free very specific thio-based PPIS and THPIS PSs showed selective and efficient PDT under normoxia, as a rare example.

Tuning d-orbitals to control spin-orbit coupling in terminated MXenes

Theory and experiment have revealed that spin-orbit coupling (SOC) strongly depends on the relativistic effect in topological insulators (TIs), while the influence of orbitals is always ignored. Herein, we provide a direct way of controlling effective SOC with the help of orbital effects, reducing the dependence on elements. Taking 5d W2CO2 and 4d Mo2CO2 MXenes as a specific example, we predict that by decreasing the hybridization strength of W atoms with C or O atoms in 2D W2CO2, the nontrivial bandgaps at the Γ-point are directly enhanced. The weak hybridization of W atoms with ligand elements enhances the electron localization of degenerate d-orbitals of three groups under the triangular prism crystal field, inducing stronger on-site Coulomb repulsion that enhances orbital polarization as well as boosts the SOC effect. Meanwhile, similar results have also been observed in 4d Mo2CO2. This implies that the orbital effects are an efficient and straightforward way to control the nontrivial bandgap in 2D MXene TIs. Our work not only provides an alternative perspective on designing large nontrivial bandgaps but also brings a possibility to control the SOC effect for TI devices.

Orbital-Selectivity-Induced Robust Quantum Anomalous Hall Effect in Hund's Metals MgFeP

Ferromagnetic (FM) states with high Curie temperatures (Tc) and strong spin-orbit coupling (SOC) are indispensable for the long-sought room-temperature quantum anomalous Hall (QAH) effects. Here, we propose a two-dimensional (2D) iron-based monolayer MgFeP that exhibits a notably high FM Tc (about 1525 K) along with exceptional structural stabilities. The unique multiorbital nature in MgFeP, where localized d x 2 - y 2 and dxz/yz orbitals coexist with itinerant dxy and dz2 orbitals, renders the monolayer a Hund's metal and in an orbital-selective Mott phase (OSMP). This OSMP triggers an FM double exchange mechanism, rationalizing the high Tc in the Hund's metal. This material transitions to a QAH insulator upon consideration of the SOC effect. By leveraging orbital selectivity, the QAH band gap can be enlarged by more than two times (to 137 meV). Our findings showcase Hund's metals as a promising material platform for realizing high-performance quantum topological electronic devices.

Large interlayer Dzyaloshinskii-Moriya interactions across Ag-layers

Seeking to enhance the strength of the interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) through a combination of atomic and Rashba type spin-orbit coupling (SOC) we studied the strength and the thickness evolution of effective interlayer coupling in Co/Ag/Co trilayers by means of surface sensitive magneto-optical measurements that take advantage of the light penetration depth. Here, we report the observation of oscillatory, thickness-dependent chiral interaction between ferromagnetic layers. Despite the weakness of the Ag atomic SOC, the IL-DMI in our trilayers is orders of magnitude larger than that of known systems using heavy metals as a spacer except of recently reported -0.15 mJ/m2 in Co/Pt/Ru(t)/Pt/Co and varies between ≈ ±0.2 mJ/m2. In contrast to known multilayers Co/Ag/Co promotes in-plane chirality between magnetic layers. The strength of IL-DMI opens up new routes for design of three-dimensional chiral spin structures combining intra- and interlayer DMI and paves the way for enhancements of the DMI strength.

Multiorbital Nature of Doped Sr_{2}IrO_{4}

The low-energy j_{eff}=1/2 band of Sr_{2}IrO_{4} bears stark resemblances with the x^{2}-y^{2} band of La_{2}CuO_{4}, and yet no superconductivity has been found so far by doping Sr_{2}IrO_{4}. Behind such a behavior could be inherent failures of the j_{eff}=1/2 picture, in particular when electrons or holes are introduced in the IrO_{2} planes. In view of this, here we reanalyze the j_{eff}=1/2 scenario. By using the local-density approximation plus dynamical mean-field theory approach, we show that the form of the effective j_{eff}=1/2 state is surprisingly stable upon doping. This supports the j_{eff}=1/2 picture. We show that, nevertheless, Sr_{2}IrO_{4} remains in essence a multiorbital system: The hybridization with the j_{eff}=3/2 orbitals sizably reduces the Mott gap by enhancing orbital degeneracy, and part of the holes go into the j_{eff}=3/2 channels. These effects cannot be reproduced by a simple effective screened Coulomb repulsion. In the optical conductivity spectra, multiorbital processes involving the j_{eff}=3/2 states contribute both to the Drude peak and to relatively low-energy features.

Robust Second-Order Topological Insulators with Giant Valley Polarization in Two-Dimensional Honeycomb Ferromagnets

Magnetic topological states have attracted great attention that provide exciting platforms for exploring prominent physical phenomena and applications of topological spintronics. Here, using a tight-binding model and first-principles calculations, we put forward that, in contrast to previously reported magnetic second-order topological insulators (SOTIs), robust SOTIs can emerge in two-dimensional ferromagnets regardless of magnetization directions. Remarkably, we identify intrinsic ferromagnetic 2H-RuCl₂ and Janus VSSe monolayers as experimentally feasible candidates of predicted robust SOTIs with the emergence of nontrivial corner states along different magnetization directions. Moreover, under out-of-plane magnetization, we unexpectedly point out that the valley polarization of SOTIs can be huge and much larger than that of the known ferrovalley materials, opening up a technological avenue to bridge the valleytronics and higher-order topology with high possibility of innovative applications in topological spintronics and valleytronics.

Spontaneous Valley Polarization in a Ferromagnetic Fe(OH)2 Monolayer

At present, creating sizable spontaneous valley polarization is at the center of the study of valleytronics, which, however, is still a huge challenge. In this work, we determined that the ferromagnetic Fe(OH)₂ monolayer of the hexagonal lattice is a highly appealing candidate for valleytronics by using first-principles calculations in conjunction with tight-binding model analysis. In light of the simultaneous inversion symmetry breaking and time-reversal symmetry breaking, we illustrated that the strong spin-orbit coupling and robust ferromagnetic exchange interaction cause a spontaneous valley polarization as large as 67 meV for Fe(OH)₂, indicative of room-temperature application. In addition, the physics of valley-selective circular dichroism, spin/valley Hall effects, and topological phase transition were also discussed.

Intrinsic Valley-Polarized Quantum Anomalous Hall Effect and Controllable Topological Phase Transition in Janus Fe2SSe

The valley-polarized quantum anomalous Hall effect (VP-QAHE) in topological materials, which usually is induced by applying external manipulations, has attracted intensive attention. Here, we predict the formation and regulation of the intrinsic VP-QAHE in ferromagnetic Janus monolayer Fe₂SSe. Spontaneous valley polarization (VP) appears without external manipulations due to the Janus structure in monolayer Fe₂SSe. The spontaneous VP in addition to the nonzero Chern number in Fe₂SSe confirm the intrinsic VP-QAHE. Besides, the topologically protected chiral-spin-valley locking edge states can be regulated by reversing the magnetization. Topological phase transitions between metal, half-metal, topological insulator, and ferrovalley phases can be obtained by applying biaxial strains in Fe₂SSe, and the nontrivial band gap reaches up to 441 meV. Also, the topological phase with the VP-QAHE is robust under certain conditions. Both the intrinsic VP-QAHE and controllable topological phase transitions can be achieved in Janus monolayer Fe₂SSe, which provides an avenue for the applications of dissipationless valleytronic devices.