Multilevel polarization switching in ferroelectric thin films

Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.

Reversible Optical Control of Polarization in Epitaxial Ferroelectric Thin Films

Light is an effective tool to probe the polarization and domain distribution in ferroelectric materials passively, that is, non-invasively, for example, via optical second harmonic generation (SHG). With the emergence of oxide electronics, there is now a strong demand to expand the role of light toward active control of the polarization. In this work, optical control of the ferroelectric polarization is demonstrated in prototypical epitaxial PbZrx Ti1-x O3 (PZT)-based heterostructures. This is accomplished in three steps, using above-bandgap UV light, while tracking the response of the polarization with optical SHG. First, it is found that UV-light exposure induces a transient enhancement or suppression of the ferroelectric polarization in films with an upward- or downward-oriented polarization, respectively. This behavior is attributed to a modified charge screening driven by the separation of photoexcited charge carriers at the Schottky interface of the ferroelectric thin film. Second, by taking advantage of this optical handle on electrostatics, remanent optical poling from a pristine multi-domain into a single-domain configuration is accomplished. Third, via thermal annealing or engineered electrostatic boundary conditions, a complete reversibility of the optical poling is further achieved. Hence, this work paves the way for the all-optical control of the spontaneous polarization in ferroelectric thin films.

Electrostatically tunable interaction of CO2 with MgO surfaces and chemical switching: first-principles theory

Electric field-assisted CO2 capture using solid adsorbents based on basic oxides can immensely reduce the required energy consumption compared to the conventional processes of temperature or pressure swing adsorption. In this work, we present first-principles density functional theoretical calculations to investigate the effects of an applied external electric field (AEEF) within the range from -1 to 1 V Å-1 on the CO2 adsorption behavior on various high and low-index facets of MgO. When CO2 is strongly adsorbed on MgO surfaces to form carbonate species, the coupling of electric fields with the resulting intrinsic dipole moment induces a 'switch' from a strongly chemisorbed state to a weakly chemisorbed or physisorbed state at a critical value of AEEF. We demonstrate that such 'switching' enables access to different metastable states with variations in the AEEF. On polar MgO(111) surfaces, we find a distinct feature of the adsorptive dissociation of CO2 towards the formation of CO in contrast to that on the non-polar MgO(100) and MgO(110) surfaces. In some cases, we observe broken inversion symmetry because of the AEEF that results in induced polarity at the interaction site of CO2 on MgO surfaces. Our results provide fundamental insights into the possibility of using AEEFs in novel solid adsorbent systems for CO2 capture and reduction.

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.

Lead-Free Perovskite Thin Films with Tailored Pockels-Kerr Effects for Photonics

Pockels and Kerr effects are linear and nonlinear electro-optical effects, respectively, used in many applications. The modulation of the refractive index is employed in different photonic circuits. However, the greatest challenge is in photonic elements for quantum computing at room temperature. For this aim, materials with strong Pockels/Kerr effects and χ(2)/χ(3) nonlinear susceptibilities are necessary. Here, we demonstrate composition-modulated strong electro-optical response in epitaxial films of (Ba,Ca)(Ti,Zr)O3 perovskite titanate. These films are grown by pulsed laser deposition on SrTiO3. Depending on the ratios of Ca/Ba and Ti/Zr, films show high Pockels or Kerr optical nonlinearities. We relate the variable electro-optic response to the occurrence of nanopolar domains with different symmetries in a selected composition range. These findings open the route to easily implement nonlinear optical elements in integrated photonic circuits.

Gradient Strain-Induced Room-Temperature Ferroelectricity in Magnetic Double-Perovskite Superlattices

Single-phase multiferroics suffer from a fundamental contradiction between polarity and magnetism in d⁰ electronic configuration, motivating studies of unconventional ferroelectricity in magnetic oxides. However, low critical temperature and polarization still need to be overcome. Here, it is reported that the switchable polarization behavior at room temperature in [(La₂ NiMnO₆ )/(La₂ CoMnO₆ )]_n double-perovskite magnetic superlattice films is achieved by engineering a microstructure with gradient strains, and the ferromagnetic Curie temperature did not show a rapid decrease. The synergy of gradient strains and superlattice components plays a decisive role in inducing ferroelectricity via the tilting or rotation of various oxygen octahedra. Such distortion responses to gradient strains are accompanied by slight magnetic fluctuations, maximizing the preservation of the initial magnetic exchange interactions, which alleviates the contradiction of multiferroic coexistence to a certain extent. This work confirms the room-temperature ferroelectricity in double-perovskite superlattices and provides a preferred strategy for confronting the difficulty of multiferroic coexistence in single-phase materials.

Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages

The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demonstrate their reversible transitions in layered ferroelectric α-In₂Se₃ transistors. By varying the gate bias, protons can be incrementally injected or extracted, achieving controllable tuning of the ferroelectric α-In₂Se₃ protonic dynamics across the channel and obtaining numerous intermediate phases. We unexpectedly discover that the gate tuning of α-In₂Se₃ protonation is volatile and the created phases remain polar. Their origin, revealed by first-principles calculations, is related to the formation of metastable hydrogen-stabilized α-In₂Se₃ phases. Furthermore, our approach enables ultralow gate voltage switching of different phases (below 0.4 volts). This work provides a possible avenue for accessing hidden phases in ferroelectric switching.

High-Throughput Scanning Second-Harmonic-Generation Microscopy for Polar Materials

The Materials Genome Initiative aims to discover, develop, manufacture, and deploy advanced materials at twice the speed of conventional approaches. To achieve this, high-throughput characterization is essential for the rapid screening of candidate materials. In this study, a high-throughput scanning second-harmonic-generation microscope with automatic partitioning, accurate positioning, and fast scanning is developed that can rapidly probe and screen polar materials. Using this technique, typical ferroelectrics, including periodically poled lithium niobate crystals and PbZr_0.2 Ti_0.8 O₃ (PZT) thin films are first investigated, whereby the microscopic domain structures are clearly revealed. This technique is then applied to a compositional-gradient (100-x)%BaTiO₃ -x%SrTiO₃ film and a thickness-gradient PZT film to demonstrate its high-throughput capabilities. Since the second-harmonic-generation signal is correlated with the macroscopic remnant polarization over the probed region determined by the laser spot, it is free of artifacts arising from leakage current and electrostatic interference, while materials' symmetries and domain structures must be carefully considered in the data analysis. It is believed that this work can help promote the high-throughput development of polar materials and contribute to the Materials Genome Initiative.

Origin of the Critical Thickness in Improper Ferroelectric Thin Films

Improper ferroelectrics are expected to be more robust than conventional ferroelectrics against depolarizing field effects and to exhibit a much-desired absence of critical thickness. Recent studies, however, revealed the loss of ferroelectric response in epitaxial improper ferroelectric thin films. Here, we investigate improper ferroelectric hexagonal YMnO₃ thin films and find that the polarization suppression, and hence functionality, in the thinner films is due to oxygen off-stoichiometry. We demonstrate that oxygen vacancies form on the film surfaces to provide the necessary charge to screen the large internal electric field resulting from the positively charged YMnO₃ surface layers. Additionally, we show that by modifying the oxygen concentration of the films, the phase transition temperatures can be substantially tuned. We anticipate that our findings are also valid for other ferroelectric oxide films and emphasize the importance of controlling the oxygen content and cation oxidation states in ferroelectrics for their successful integration in nanoscale applications.