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Zhao Y, Mao J, Wu Z, Io WF, Pang SY, Zhao Y, Hao J. A clean transfer approach to prepare centimetre-scale black phosphorus crystalline multilayers on silicon substrates for field-effect transistors. Nat Commun 2024; 15:6795. [PMID: 39122765 PMCID: PMC11315922 DOI: 10.1038/s41467-024-51140-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Accepted: 07/31/2024] [Indexed: 08/12/2024] Open
Abstract
Recently reported direct growth of highly crystalline centimetre-sized black phosphorus (BP) thin films on mica substrates by pulsed laser deposition (PLD) has attracted considerable research interest. However, an effective and general transfer method to incorporate them into (opto-)electronic devices is still missing. Here, we show a wet transfer method utilizing ethylene-vinyl acetate (EVA) and an ethylene glycol (EG) solution to transfer high-crystalline large-area PLD-BP films onto SiO2/Si substrates. The transferred films were used to fabricate BP-based bottom-gate field-effect transistor (FET) arrays exhibiting good uniformity and continuity, with carrier mobility and current switching ratios comparable to those obtained in as-grown BP films on mica substrates. Our work presents a promising transfer strategy for scalable integration of on-substrate grown 2D BP into devices with more complex structures and further investigation of material properties.
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Affiliation(s)
- Yuqian Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Jianfeng Mao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Zehan Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Sin-Yi Pang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Yifei Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China.
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2
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Wu X, Cao Z, Zhao T, Wu Y, Li Z, Doukas S, Lidorikis E, Xue Y, Liu L, Ghaebi O, Soavi G, Lu J, Ni Z, Wang J. High efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators. NANOSCALE HORIZONS 2024; 9:1372-1378. [PMID: 38895819 DOI: 10.1039/d4nh00160e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Graphene modulators are considered a potential solution for achieving high-efficiency light modulation, and graphene-silicon hybrid-integrated modulators are particularly favorable due to their CMOS compatibility and low cost. The exploitation of graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer. We fabricate and demonstrate a microscale thermo-optical modulator with a tuning efficiency of 0.037 nm mW-1 and a high heating performance of 67.4 K μm3 mW-1 on a small active area of 7.54 μm2 and a graphene electro-absorption modulator featuring a high speed data rate reaching 56 Gb s-1 and a low power consumption of 200 fJ per bit. These devices show superior performance compared to the state of the art devices in terms of high efficiency, low process complexity, and compact device footage, which can support the realization of high-performance graphene-silicon hybrid-integrated photonic circuits with CMOS compatibility.
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Affiliation(s)
- Xiaoxuan Wu
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Zhengyi Cao
- CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
| | - Tianxiang Zhao
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Yun Wu
- CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
| | - Zhonghui Li
- CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
| | - Spyros Doukas
- Department of Material Science and Engineering, University of Ioannina, GR 45110 Ioannina, Greece
| | - Elefterios Lidorikis
- Department of Material Science and Engineering, University of Ioannina, GR 45110 Ioannina, Greece
| | - Yu Xue
- State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310058, China
| | - Liu Liu
- State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310058, China
- Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
| | - Omid Ghaebi
- Institute of Solid State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany
| | - Giancarlo Soavi
- Institute of Solid State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, 07745 Jena, Germany
| | - Junpeng Lu
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Zhenhua Ni
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
| | - Junjia Wang
- National Research Center for Optical Sensors/Communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
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3
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Guo L, Wu N, Zhang S, Zeng H, Yang J, Han X, Duan H, Liu Y, Wang L. Emerging Advances around Nanofluidic Transport and Mass Separation under Confinement in Atomically Thin Nanoporous Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404087. [PMID: 39031097 DOI: 10.1002/smll.202404087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Revised: 07/07/2024] [Indexed: 07/22/2024]
Abstract
Membrane separation stands as an environmentally friendly, high permeance and selectivity, low energy demand process that deserves scientific investigation and industrialization. To address intensive demand, seeking appropriate membrane materials to surpass trade-off between permeability and selectivity and improve stability is on the schedule. 2D materials offer transformational opportunities and a revolutionary platform for researching membrane separation process. Especially, the atomically thin graphene with controllable porosity and structure, as well as unique properties, is widely considered as a candidate for membrane materials aiming to provide extreme stability, exponentially large selectivity combined with high permeability. Currently, it has shown promising opportunities to develop separation membranes to tackle bottlenecks of traditional membranes, and it has been of great interest for tremendously versatile applications such as separation, energy harvesting, and sensing. In this review, starting from transport mechanisms of separation, the material selection bank is narrowed down to nanoporous graphene. The study presents an enlightening overview of very recent developments in the preparation of atomically thin nanoporous graphene and correlates surface properties of such 2D nanoporous materials to their performance in critical separation applications. Finally, challenges related to modulation and manufacturing as well as potential avenues for performance improvements are also pointed out.
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Affiliation(s)
- Liping Guo
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Ningran Wu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Shengping Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Haiou Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Jing Yang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Xiao Han
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Hongwei Duan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
| | - Yuancheng Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Luda Wang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
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4
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Wang S, Han Z, Zhang L, Shi Y, Cao S, Chen Y, Deng Z, Yang X, Li J, Sun B. Indeno[3,2- b]carbazole-Based Small Molecule Layer Enables Optimized Carrier Transport for PbS Quantum Dot NIR Photodetectors. J Phys Chem Lett 2024; 15:6750-6757. [PMID: 38912792 DOI: 10.1021/acs.jpclett.4c01567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/25/2024]
Abstract
Colloidal quantum dots (CQDs) have garnered considerable attention for photodetectors (PDs), attributable to exceptional photoelectric properties and ease solution-based processing. However, the prevalent use of 1,2-ethanedithiol (EDT) as a hole transport layer (HTL) has limitations, such as energy level discrepancies, requisite oxidation, and intricate multilayer assembly. Organic p-type materials, lauded for their superior attributes and synthetic versatility, are now stepping forward as viable substitutes for conventional EDT HTLs. In this work, we introduced an organic HTL derived from indolo[3,2-b]carbazole, named ZL004, leading to a marked improvement in carrier generation and collection, facilitated by the optimized band alignment and enhanced interfacial charge dynamics. The ZL004-based PDs exhibit a photoresponsivity of 0.45 A/W, a noise current of 1.8 × 10-11 A Hz-0.5, a specific detectivity of 4.6 × 109 Jones, and an expansive linear dynamic range of 107 dB─surpassing EDT-based devices across the board, demonstrating the extraordinary property of organic p-type materials for CQD-based PDs.
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Affiliation(s)
- Shunqiang Wang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Li Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yi Shi
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Shuang Cao
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yong Chen
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Zijian Deng
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Road, Dalian 116024, China
| | - Xichuan Yang
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Road, Dalian 116024, China
| | - Junyu Li
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
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5
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Liu H, Wang S, Fu Y, Shi C, Song Y, Zhang L, Chen C, Ling Z. Dependence of the formation kinetics of carbon dioxide hydrate on clay aging for solid carbon dioxide storage. J Colloid Interface Sci 2024; 675:347-356. [PMID: 38972122 DOI: 10.1016/j.jcis.2024.07.024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2024] [Revised: 07/02/2024] [Accepted: 07/03/2024] [Indexed: 07/09/2024]
Abstract
Clay-based marine sediments have great potential for safe and effective carbon dioxide (CO2) encapsulation by storing enormous amounts of CO2 in solid gas hydrate form. However, the aging of clay with time changes the surface properties of clay and complicates the CO2 hydrate formation behaviors in sediments. Due to the long clay aging period, it is difficult to identify the role of clay aging in the formation of CO2 hydrate in marine sediments. Here, we used ultrasonication and plasma treatment to simulate the breakage and oxidation of clay nanoflakes in aging and investigated the influence of clay aging on CO2 hydrate formation kinetics. We found that the breakage and oxidation of clay nanoflakes would disrupt the siloxane rings and graft hydroxyl on the clay nanoflakes. This decreased the negative charge density of clay nanoflakes and weakened the interfacial interaction of clay nanoflakes with the surrounding water. Therefore, the small clay nanoflakes enriched in hydroxyl would disrupt the surrounding tetrahedral water structure analogous to the CO2 hydrate, resulting in the prolongation of CO2 hydrate nucleation. These results revealed the influence of the structure-function relationship of clay nanoflakes with CO2 hydrate formation and are favorable for the development of hydrate-based CO2 storage.
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Affiliation(s)
- Huiquan Liu
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China
| | - Shuai Wang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China
| | - Yixuan Fu
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China
| | - Changrui Shi
- Energy Research Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Yongchen Song
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China; Ningbo Institute of Dalian University of Technology, Ningbo 315016, China.
| | - Lunxiang Zhang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China; Ningbo Institute of Dalian University of Technology, Ningbo 315016, China
| | - Cong Chen
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China; Ningbo Institute of Dalian University of Technology, Ningbo 315016, China
| | - Zheng Ling
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy & Power Engineering, Dalian University of Technology, Dalian 116024, China; Ningbo Institute of Dalian University of Technology, Ningbo 315016, China.
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6
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Wan Z, Chen Z, Shi L, Zheng A, Min J, Shen C, Du B, Guo Y, Gao X, Yin J, Ge H, Niu S, Lu H, Yin K, Wu D, Liu Z, Xia Y. Room-Temperature Growth of Square-Millimeter Single-Crystalline Two-Dimensional Metal Halides on Silicon. ACS NANO 2024; 18:15096-15106. [PMID: 38810232 DOI: 10.1021/acsnano.4c02336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Silicon is the cornerstone of electronics and photonics. In this context, almost all integrated devices derived from two-dimensional (2D) materials stay rooted in silicon technology. However, as the growth substrate, silicon has long been thought to be a hindrance for growing 2D materials through bottom-up methods that require high growth temperatures, and thus, indirect routes are usually considered instead. Although promising growth of large-area 2D materials on silicon has been demonstrated, the direct growth of single-crystalline materials using low-thermal-budget synthesis methods remains challenging. Here, we report the room-temperature growth of millimeter-scale single-crystal 2D metal halides on silicon substrates with a hydroxyl-terminated surface. Theoretical calculations reveal that the activation energy for surface diffusion can be reduced by an order of magnitude by terminating the surface with hydroxyl groups, from which on-silicon growth is greatly facilitated at room temperature and enables a 4-order-of-magnitude increase in area. The high quality and uniformity of the resulting single crystals are further evidenced. The optoelectronic devices employing the as-grown materials show an ultralow dark current of 10-13 A and a high detectivity of 1013 Jones, thereby corroborating a weak-light detection ability. These results would point to a rich space of surface modulation that can be used to surmount current limitations and demonstrate a promising strategy for growing 2D materials directly on silicon at room temperature to produce large single crystals.
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Affiliation(s)
- Zuteng Wan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiwen Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S3E4, Canada
| | - Lei Shi
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Anqi Zheng
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Jin Min
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Cong Shen
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Bingfeng Du
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanhua Guo
- College of Materials Science and Engineering, Tech Institute for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xu Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
| | - Jiang Yin
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haixiong Ge
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shanyuan Niu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haiming Lu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kuibo Yin
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Di Wu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiguo Liu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yidong Xia
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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7
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Feng Y, Khalid M, Xiao H, Hu P. Two-dimensional material assisted-growth strategy: new insights and opportunities. NANOTECHNOLOGY 2024; 35:322001. [PMID: 38688246 DOI: 10.1088/1361-6528/ad4553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 04/30/2024] [Indexed: 05/02/2024]
Abstract
The exploration and synthesis of novel materials are integral to scientific and technological progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is expected to play an important role in the application of industrialization and the information age, resulting from its excellent physical and chemical properties. Currently, researchers have effectively utilized a range of material synthesis techniques, including mechanical exfoliation, redox reactions, chemical vapor deposition, and chemical vapor transport, to fabricate two-dimensional materials. However, despite their rapid development, the widespread industrial application of 2D materials faces challenges due to demanding synthesis requirements and high costs. To address these challenges, assisted growth techniques such as salt-assisted, gas-assisted, organic-assisted, and template-assisted growth have emerged as promising approaches. Herein, this study gives a summary of important developments in recent years in the assisted growth synthesis of 2D materials. Additionally, it highlights the current difficulties and possible benefits of the assisted-growth approach for 2D materials. It also highlights novel avenues of development and presents opportunities for new lines of investigation.
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Affiliation(s)
- Yuming Feng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Mansoor Khalid
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Haiying Xiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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8
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Nashashibi S, Koepfli SM, Schwanninger R, Baumann M, Doderer M, Bisang D, Fedoryshyn Y, Leuthold J. Engineering Graphene Phototransistors for High Dynamic Range Applications. ACS NANO 2024; 18:12760-12770. [PMID: 38728257 PMCID: PMC11112981 DOI: 10.1021/acsnano.3c11856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 04/23/2024] [Accepted: 05/01/2024] [Indexed: 05/12/2024]
Abstract
Phototransistors are light-sensitive devices featuring a high dynamic range, low-light detection, and mechanisms to adapt to different ambient light conditions. These features are of interest for bioinspired applications such as artificial and restored vision. In this work, we report on a graphene-based phototransistor exploiting the photogating effect that features picowatt- to microwatt-level photodetection, a dynamic range covering six orders of magnitude from 7 to 107 lux, and a responsivity of up to 4.7 × 103 A/W. The proposed device offers the highest dynamic range and lowest optical power detected compared to the state of the art in interfacial photogating and further operates air stably. These results have been achieved by a combination of multiple developments. For example, by optimizing the geometry of our devices with respect to the graphene channel aspect ratio and by introducing a semitransparent top-gate electrode, we report a factor 20-30 improvement in responsivity over unoptimized reference devices. Furthermore, we use a built-in dynamic range compression based on a partial logarithmic optical power dependence in combination with control of responsivity. These features enable adaptation to changing lighting conditions and support high dynamic range operation, similar to what is known in human visual perception. The enhanced performance of our devices therefore holds potential for bioinspired applications, such as retinal implants.
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Affiliation(s)
- Shadi Nashashibi
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Stefan M. Koepfli
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | | | - Michael Baumann
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Michael Doderer
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Dominik Bisang
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Yuriy Fedoryshyn
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Juerg Leuthold
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
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9
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Wu Q, Qian J, Wang Y, Xing L, Wei Z, Gao X, Li Y, Liu Z, Liu H, Shu H, Yin J, Wang X, Peng H. Waveguide-integrated twisted bilayer graphene photodetectors. Nat Commun 2024; 15:3688. [PMID: 38693107 PMCID: PMC11063206 DOI: 10.1038/s41467-024-47925-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Accepted: 04/16/2024] [Indexed: 05/03/2024] Open
Abstract
Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.
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Affiliation(s)
- Qinci Wu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Jun Qian
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Luwen Xing
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
- School of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Ziyi Wei
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Yurui Li
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Hongtao Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
| | - Haowen Shu
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Xingjun Wang
- State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, 100871, Beijing, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China.
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10
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Zhu Y, Shi Z, Zhao Y, Bu S, Hu Z, Liao J, Lu Q, Zhou C, Guo B, Shang M, Li F, Xu Z, Zhang J, Xie Q, Li C, Sun P, Mao B, Zhang X, Liu Z, Lin L. Recent trends in the transfer of graphene films. NANOSCALE 2024; 16:7862-7873. [PMID: 38568087 DOI: 10.1039/d3nr05626k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Recent years have witnessed advances in chemical vapor deposition growth of graphene films on metal foils with fine scalability and thickness controllability. However, challenges for obtaining wrinkle-free, defect-free and large-area uniformity remain to be tackled. In addition, the real commercial applications of graphene films still require industrially compatible transfer techniques with reliable performance of transferred graphene, excellent production capacity, and suitable cost. Transferred graphene films, particularly with a large area, still suffer from the presence of transfer-related cracks, wrinkles and contaminants, which would strongly deteriorate the quality and uniformity of transferred graphene films. Potential applications of graphene films include moisture barrier films, transparent conductive films, electromagnetic shielding films, and optical communications; such applications call different requirements for the performance of transferred graphene, which, in turn, determine the suitable transfer techniques. Besides the reliable transfer process, automatic machines should be well developed for the future batch transfer of graphene films, ensuring the repeatability and scalability. This mini-review provides a summary of recent advances in the transfer of graphene films and offers a perspective for future directions of transfer techniques that are compatible for industrial batch transfer.
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Affiliation(s)
- Yaqi Zhu
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Zhuofeng Shi
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Yixuan Zhao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
| | - Zhaoning Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Junhao Liao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qi Lu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, P. R. China
| | - Chaofan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Bingbing Guo
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Mingpeng Shang
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Fangfang Li
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Zhiying Xu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Jialin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Qin Xie
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Chunhu Li
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Pengzhan Sun
- Institute of Applied Physics and Materials, Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, P.R. China
| | - Boyang Mao
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, U.K
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
| | - Zhongfan Liu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
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11
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Zhu Y, Zhang J, Cheng T, Tang J, Duan H, Hu Z, Shao J, Wang S, Wei M, Wu H, Li A, Li S, Balci O, Shinde SM, Ramezani H, Wang L, Lin L, Ferrari AC, Yakobson BI, Peng H, Jia K, Liu Z. Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308802. [PMID: 37878366 DOI: 10.1002/adma.202308802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/05/2023] [Indexed: 10/26/2023]
Abstract
Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.
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Affiliation(s)
- Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Ting Cheng
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Jilin Tang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Hongwei Duan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jiaxin Shao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Mingyue Wei
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ang Li
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Sheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Osman Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Sachin M Shinde
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hamideh Ramezani
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Luda Wang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Boris I Yakobson
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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12
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Wang Y, Su N, Wei S, Wang J, Li M. Enhancing the Consistency and Performance of Graphene-Based Devices via Al Intermediate-Layer-Assisted Transfer and Patterning. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:568. [PMID: 38607102 PMCID: PMC11013706 DOI: 10.3390/nano14070568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 03/21/2024] [Accepted: 03/23/2024] [Indexed: 04/13/2024]
Abstract
Graphene has garnered widespread attention, and its use is being explored for various electronic devices due to its exceptional material properties. However, the use of polymers (PMMA, photoresists, etc.) during graphene transfer and patterning processes inevitably leaves residues on graphene surface, which can decrease the performance and yield of graphene-based devices. This paper proposes a new transfer and patterning process that utilizes an Al intermediate layer to separate graphene from polymers. Through DFT calculations, the binding energy of graphene-Al was found to be only -0.48 eV, much lower than that of PMMA and photoresist with graphene, making it easier to remove Al from graphene. Subsequently, this was confirmed through XPS analysis. A morphological characterization demonstrated that the graphene patterns prepared using the Al intermediate layer process exhibited higher surface quality, with significantly reduced roughness. It is noteworthy that the devices obtained with the proposed method exhibited a notable enhancement in both consistency and sensitivity during electrical testing (increase of 67.14% in temperature sensitivity). The low-cost and pollution-free graphene-processing method proposed in this study will facilitate the further commercialization of graphene-based devices.
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Affiliation(s)
- Yinjie Wang
- Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, China;
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China; (N.S.); (S.W.)
| | - Ningning Su
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China; (N.S.); (S.W.)
- School of Semiconductors and Physics, North University of China, Taiyuan 030051, China
| | - Shengsheng Wei
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China; (N.S.); (S.W.)
- School of Semiconductors and Physics, North University of China, Taiyuan 030051, China
| | - Junqiang Wang
- Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, China;
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China; (N.S.); (S.W.)
| | - Mengwei Li
- Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, China;
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China; (N.S.); (S.W.)
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13
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Bian Y, Zhu M, Wang C, Liu K, Shi W, Zhu Z, Qin M, Zhang F, Zhao Z, Wang H, Liu Y, Guo Y. A detachable interface for stable low-voltage stretchable transistor arrays and high-resolution X-ray imaging. Nat Commun 2024; 15:2624. [PMID: 38521822 PMCID: PMC10960804 DOI: 10.1038/s41467-024-47026-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 03/18/2024] [Indexed: 03/25/2024] Open
Abstract
Challenges associated with stretchable optoelectronic devices, such as pixel size, power consumption and stability, severely brock their realization in high-resolution digital imaging. Herein, we develop a universal detachable interface technique that allows uniform, damage-free and reproducible integration of micropatterned stretchable electrodes for pixel-dense intrinsically stretchable organic transistor arrays. Benefiting from the ideal heterocontact and short channel length (2 μm) in our transistors, switching current ratio exceeding 106, device density of 41,000 transistors/cm2, operational voltage down to 5 V and excellent stability are simultaneously achieved. The resultant stretchable transistor-based image sensors exhibit ultrasensitive X-ray detection and high-resolution imaging capability. A megapixel image is demonstrated, which is unprecedented for stretchable direct-conversion X-ray detectors. These results forge a bright future for the stretchable photonic integration toward next-generation visualization equipment.
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Affiliation(s)
- Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mingliang Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kai Liu
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiheng Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hanlin Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
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14
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Belyaeva L, Ludwig C, Lai YC, Chou CC, Shih CJ. Uniform, Strain-Free, Large-Scale Graphene and h-BN Monolayers Enabled by Hydrogel Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307054. [PMID: 37867241 DOI: 10.1002/smll.202307054] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 10/05/2023] [Indexed: 10/24/2023]
Abstract
Translation of the unique properties of 2D monolayers from non-scalable micron-sized samples to macroscopic scale is a longstanding challenge obstructed by the substrate-induced strains, interface nonuniformities, and sample-to-sample variations inherent to the scalable fabrication methods. So far, the most successful strategies to reduce strain in graphene are the reduction of the interface roughness and lattice mismatch by using hexagonal boron nitride (h-BN), with the drawback of limited uniformity and applicability to other 2D monolayers, and liquid water, which is not compatible with electronic devices. This work demonstrates a new class of substrates based on hydrogels that overcome these limitations and excel h-BN and water substrates at strain relaxation enabling superiorly uniform and reproducible centimeter-sized sheets of unstrained monolayers. The ultimate strain relaxation and uniformity are rationalized by the extreme structural adaptability of the hydrogel surface owing to its high liquid content and low Young's modulus, and are universal to all 2D materials irrespective of their crystalline structure. Such platforms can be integrated into field effect transistors and demonstrate enhanced charge carrier mobilities in graphene. These results present a universal strategy for attaining uniform and strain-free sheets of 2D materials and underline the opportunities enabled by interfacing them with soft matter.
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Affiliation(s)
- Liubov Belyaeva
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| | - Cyril Ludwig
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| | - Yu-Cheng Lai
- Institute of Applied Mechanics, College of Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan
| | - Chia-Ching Chou
- Institute of Applied Mechanics, College of Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan
| | - Chih-Jen Shih
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
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15
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Guglielmotti V, Fuhry E, Neubert TJ, Kuhl M, Pallarola D, Balasubramanian K. Real-Time Monitoring of Cell Adhesion onto a Soft Substrate by a Graphene Impedance Biosensor. ACS Sens 2024; 9:101-109. [PMID: 38141037 DOI: 10.1021/acssensors.3c01705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2023]
Abstract
Soft substrates are interesting for many applications, ranging from mimicking the cellular microenvironment to implants. Conductive electrodes on such substrates allow the realization of flexible, elastic, and transparent sensors. Single-layer graphene as a candidate for such electrodes brings the advantage that the active area of the sensor is transparent and conformal to the underlying substrate. Here, we overcome several challenges facing the routine realization of graphene cell sensors on a canonical soft substrate, namely, poly(dimethylsiloxane) (PDMS). We have systematically studied the effect of surface energy before, during, and after the transfer of graphene. Thus, we have identified a suitable support polymer, optimal substrate (pre)treatment, and an appropriate solvent for the removal of the support. Using this procedure, we can reproducibly obtain stable and intact graphene sensors on a millimeter scale on PDMS, which can withstand continuous measurements in cell culture media for several days. From local nanomechanical measurements, we infer that the softness of the substrate is slightly affected after the graphene transfer. However, we can modulate the stiffness using PDMS with differing compositions. Finally, we show that graphene sensors on PDMS can be successfully used as soft electrodes for real-time monitoring of the cell adhesion kinetics. The routine availability of single-layer graphene electrodes on a soft substrate with tunable stiffness will open a new avenue for studies, where the PDMS-liquid interface is made conducting with minimal alteration of the intrinsic material properties such as softness, flexibility, elasticity, and transparency.
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Affiliation(s)
- Victoria Guglielmotti
- Department of Chemistry, School of Analytical Sciences Adlershof (SALSA) & IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 10099, Germany
- Instituto de Nanosistemas, Universidad Nacional de General San Martín, San Martín 1650, Provincia de Buenos Aires, Argentina
| | - Emil Fuhry
- Department of Chemistry, School of Analytical Sciences Adlershof (SALSA) & IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 10099, Germany
| | - Tilmann J Neubert
- Department of Chemistry, School of Analytical Sciences Adlershof (SALSA) & IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 10099, Germany
| | - Michel Kuhl
- Department of Chemistry, School of Analytical Sciences Adlershof (SALSA) & IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 10099, Germany
| | - Diego Pallarola
- Instituto de Nanosistemas, Universidad Nacional de General San Martín, San Martín 1650, Provincia de Buenos Aires, Argentina
| | - Kannan Balasubramanian
- Department of Chemistry, School of Analytical Sciences Adlershof (SALSA) & IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 10099, Germany
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16
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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17
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Yuan G, Liu W, Huang X, Wan Z, Wang C, Yao B, Sun W, Zheng H, Yang K, Zhou Z, Nie Y, Xu J, Gao L. Stacking transfer of wafer-scale graphene-based van der Waals superlattices. Nat Commun 2023; 14:5457. [PMID: 37674029 PMCID: PMC10482836 DOI: 10.1038/s41467-023-41296-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 08/29/2023] [Indexed: 09/08/2023] Open
Abstract
High-quality graphene-based van der Waals superlattices are crucial for investigating physical properties and developing functional devices. However, achieving homogeneous wafer-scale graphene-based superlattices with controlled twist angles is challenging. Here, we present a flat-to-flat transfer method for fabricating wafer-scale graphene and graphene-based superlattices. The aqueous solution between graphene and substrate is removed by a two-step spinning-assisted dehydration procedure with the optimal wetting angle. Proton-assisted treatment is further used to clean graphene surfaces and interfaces, which also decouples graphene and neutralizes the doping levels. Twist angles between different layers are accurately controlled by adjusting the macroscopic stacking angle through their wafer flats. Transferred films exhibit minimal defects, homogeneous morphology, and uniform electrical properties over wafer scale. Even at room temperature, robust quantum Hall effects are observed in graphene films with centimetre-scale linewidth. Our stacking transfer method can facilitate the fabrication of graphene-based van der Waals superlattices and accelerate functional device applications.
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Affiliation(s)
- Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zihao Wan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bing Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hang Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Kehan Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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18
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Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X. Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene. SCIENCE ADVANCES 2023; 9:eadf8484. [PMID: 37531436 PMCID: PMC10396303 DOI: 10.1126/sciadv.adf8484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 07/05/2023] [Indexed: 08/04/2023]
Abstract
Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.
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Affiliation(s)
- Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Tao Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Xin Gao
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huaiyuan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Institute for Multidisciplinary Innovation, University of Science and Technology Beijing, Beijing 100083, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yucheng Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zhen Huang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jilin Tang
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhaoying Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Hailin Peng
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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19
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Bøggild P. Research on scalable graphene faces a reproducibility gap. Nat Commun 2023; 14:1126. [PMID: 36854768 PMCID: PMC9974952 DOI: 10.1038/s41467-023-36891-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Accepted: 02/22/2023] [Indexed: 03/02/2023] Open
Abstract
More than a decade after the first demonstration of large-scale graphene synthesis by chemical vapor deposition, the commercialization of graphene products is limited not only by price, but also by consistency, reproducibility, and predictability. Here, the author discusses the reproducibility issues in the field and proposes possible solutions to improve the reliability of published results.
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Affiliation(s)
- Peter Bøggild
- Department of Physics, Technical University of Denmark, 2800 Kgs, Lyngby, Denmark.
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20
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Pang J, Peng S, Hou C, Zhao H, Fan Y, Ye C, Zhang N, Wang T, Cao Y, Zhou W, Sun D, Wang K, Rümmeli MH, Liu H, Cuniberti G. Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles. ACS Sens 2023; 8:482-514. [PMID: 36656873 DOI: 10.1021/acssensors.2c02790] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Graphene remains of great interest in biomedical applications because of biocompatibility. Diseases relating to human senses interfere with life satisfaction and happiness. Therefore, the restoration by artificial organs or sensory devices may bring a bright future by the recovery of senses in patients. In this review, we update the most recent progress in graphene based sensors for mimicking human senses such as artificial retina for image sensors, artificial eardrums, gas sensors, chemical sensors, and tactile sensors. The brain-like processors are discussed based on conventional transistors as well as memristor related neuromorphic computing. The brain-machine interface is introduced for providing a single pathway. Besides, the artificial muscles based on graphene are summarized in the means of actuators in order to react to the physical world. Future opportunities remain for elevating the performances of human-like sensors and their clinical applications.
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Affiliation(s)
- Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center and Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Chongyang Hou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing 100088, People's Republic of China
| | - Yingju Fan
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Chen Ye
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Nuo Zhang
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Ting Wang
- State Key Laboratory of Biobased Material and Green Papermaking and People's Republic of China School of Bioengineering, Qilu University of Technology, Shandong Academy of Sciences, No. 3501 Daxue Road, Jinan 250353, People's Republic of China
| | - Yu Cao
- Key Laboratory of Modern Power System Simulation and Control & Renewable Energy Technology (Ministry of Education) and School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Ding Sun
- School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, P. R. China
| | - Kai Wang
- School of Electrical Engineering, Weihai Innovation Research Institute, Qingdao University, Qingdao 266000, China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden, D-01171, Germany.,College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.,Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland.,Institute for Complex Materials, IFW Dresden, 20 Helmholtz Strasse, Dresden 01069, Germany.,Center for Energy and Environmental Technologies, VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China.,State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials and Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany
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21
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Hung YH, Hsieh TC, Lu WC, Su CY. Ultraclean and Facile Patterning of CVD Graphene by a UV-Light-Assisted Dry Transfer Method. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4826-4834. [PMID: 36646630 DOI: 10.1021/acsami.2c20076] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The synthesis of large-area graphene by the chemical vapor deposition (CVD) method is a mature technology; however, a transfer procedure is required to integrate CVD-grown graphene into a functional device. The reported methods for transferring graphene films cause different degrees of defects (cracking, rupture) and ion/polymer residues, which deteriorate or alter the electrical properties of as-grown graphene. Developing a reliable and fast transfer method that can maintain high-quality graphene remains a challenge. In this work, we employed UV light release tape (UV-RT) as the support layer to replace the frequently used thermal release tape (TRT) in a typical roll-to-roll dry transfer process. In this process, we used an easier-to-remove polymer as an adhesion layer to greatly reduce the strain and defects that occur during the transfer process. The cleanliness of graphene transferred by this method is above 99%, and the carrier mobility is 1.6 and 1.1 times higher than that obtained with conventional wet transfer and TRT transfer methods, respectively. UV illumination leads to facile and uniform release of the graphene film onto the target substrate, achieving one-step and selective patterning of graphene (feature size of <100 μm). The UV-assisted decomposition of the polymer molecular structure into small molecules enables a residue-free and ultraclean graphene surface. This proposed transfer method enables facile patterning of graphene and 2D films while maintaining high quality, which paves the way for versatile functional graphene applications.
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Affiliation(s)
- Yu-Han Hung
- Graduate Institute of Energy Engineering, National Central University, Tao-Yuan32001, Taiwan
- Department of Mechanical Engineering, National Central University, Tao-Yuan32001, Taiwan
| | - Tzu-Chiao Hsieh
- Graduate Institute of Energy Engineering, National Central University, Tao-Yuan32001, Taiwan
| | - Wan-Chui Lu
- Department of Mechanical Engineering, National Central University, Tao-Yuan32001, Taiwan
| | - Ching-Yuan Su
- Graduate Institute of Energy Engineering, National Central University, Tao-Yuan32001, Taiwan
- Department of Mechanical Engineering, National Central University, Tao-Yuan32001, Taiwan
- Graduate Institute of Material Science and Engineering, National Central University, Tao-Yuan32001, Taiwan
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22
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Yu X, Dai Y, Lu Y, Liu C, Yan Y, Shen R, Yang Z, Feng L, Sun L, Liu Y, Lin S. High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204058. [PMID: 36394152 PMCID: PMC9839879 DOI: 10.1002/advs.202204058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Despite the fascinating optoelectronic properties of graphene, the power conversion efficiency (PCE) of graphene based solar cells remains to be lifted up. Herein, it is experimentally shown that the graphene/quantum wells/GaAs heterostructure solar cell can reach a PCE of 20.2% and an open-circuit voltage (Voc ) as high as 1.16 V at 90 K. The high efficiency is a result of carrier multiplication (CM) effect of graphene in the graphene/GaAs heterostructure. Especially, the external quantum efficiency (EQE) in the ultraviolet wavelength can be improved up to 72.2% based on the heterostructure constructed by graphene/In0.15 Ga0.85 As/GaAs0.75 P0.25 quantum wells/GaAs. The EQE increases as the light wavelength decreases, which indicates more carriers can be effectively excited by the higher energy photons through CM effect. Owing to these physical characters, the graphene/GaAs heterostructure solar cell will provide a possible way to exceed Shockley-Queisser (S-Q) limit.
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Affiliation(s)
- Xutao Yu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yue Dai
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yanghua Lu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Chang Liu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yanfei Yan
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Runjiang Shen
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zunshan Yang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Lixuan Feng
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Lijie Sun
- State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources, Shanghai, 200245, P. R. China
| | - Yong Liu
- State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources, Shanghai, 200245, P. R. China
| | - Shisheng Lin
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, P. R. China
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