1
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Kimberly TQ, Wang EYC, Navarro GD, Qi X, Ciesielski KM, Toberer ES, Kauzlarich SM. Into the Void: Single Nanopore in Colloidally Synthesized Bi 2Te 3 Nanoplates with Ultralow Lattice Thermal Conductivity. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:6618-6626. [PMID: 39005532 PMCID: PMC11238327 DOI: 10.1021/acs.chemmater.4c01092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 06/17/2024] [Accepted: 06/18/2024] [Indexed: 07/16/2024]
Abstract
Bi2Te3 is a well-known thermoelectric material that was first investigated in the 1960s, optimized over decades, and is now one of the highest performing room-temperature thermoelectric materials to-date. Herein, we report on the colloidal synthesis, growth mechanism, and thermoelectric properties of Bi2Te3 nanoplates with a single nanopore in the center. Analysis of the reaction products during the colloidal synthesis reveals that the reaction progresses via a two-step nucleation and epitaxial growth: first of elemental Te nanorods and then the binary Bi2Te3 nanoplate growth. The rates of epitaxial growth can be controlled during the reaction, thus allowing the formation of a single nanopore in the center of the Bi2Te3 nanoplates. The size of the nanopore can be controlled by changing the pH of the reaction solution, where larger pores with diameter of ∼50 nm are formed at higher pH and smaller pores with diameter of ∼16 nm are formed at lower pH. We propose that the formation of the single nanopore is mediated by the Kirkendall effect and thus the reaction conditions allow for the selective control over pore size. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The single nanopores have a thin amorphous layer at the edge, revealed by transmission electron microscopy. Thermoelectric properties of the pristine and single-nanopore Bi2Te3 nanoplates were measured in the parallel and perpendicular directions. These properties reveal strong anisotropy with a significant reduction to thermal conductivity and increased electrical resistivity in the perpendicular direction due to the higher number of nanoplate and nanopore interfaces. Furthermore, Bi2Te3 nanoplates with a single nanopore exhibit ultralow lattice thermal conductivity values, reaching ∼0.21 Wm-1K-1 in the perpendicular direction. The lattice thermal conductivity was found to be systematically lowered with pore size, allowing for the realization of a thermoelectric figure of merit, zT of 0.75 at 425 K for the largest pore size.
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Affiliation(s)
- Tanner Q Kimberly
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
| | - Evan Y C Wang
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
| | - Gustavo D Navarro
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
| | - Xiao Qi
- The Molecular Foundry, Lawrence Berkeley National Lab, Berkeley, California 94720, United States
| | - Kamil M Ciesielski
- Department of Physics, Colorado School of Mines, 1523 Illinois Street, Golden, Colorado 80401, United States
| | - Eric S Toberer
- Department of Physics, Colorado School of Mines, 1523 Illinois Street, Golden, Colorado 80401, United States
| | - Susan M Kauzlarich
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
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2
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Sarkar D, Bhui A, Maria I, Dutta M, Biswas K. Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance. Chem Soc Rev 2024; 53:6100-6149. [PMID: 38717749 DOI: 10.1039/d4cs00038b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.
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Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Animesh Bhui
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Ivy Maria
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Moinak Dutta
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
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3
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Zhang H, Lu L, Meng W, Cheng SD, Mi SB. Nanoscale fabrication of heterostructures in thermoelectric SnTe. NANOSCALE 2024; 16:2303-2309. [PMID: 38224170 DOI: 10.1039/d3nr04646j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/16/2024]
Abstract
Enhancing the performance of thermoelectric materials is demanded to develop strategies for introducing multidimensional microstructures into materials to induce full-scale phonon scattering while ensuring electrical transport performance. Herein, a previously unreported rhombohedral h-SnTe (R3̄m) has been achieved in the nanoscale dimension by the electron beam irradiation of β-SnTe (Fm3̄m) materials. The h-SnTe structure contains interlayer van der Waals gaps and exhibits metallic behavior evaluated by density-functional theory calculations, which coherently appears in the narrow-band semiconductor β-SnTe matrix. Our results provide a strategy for modifying the properties of SnTe-based thermoelectric materials and designing nanostructured chalcogenide heterostructures via electron beam irradiation.
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Affiliation(s)
- Hu Zhang
- Ji Hua Laboratory, Foshan, 528200, China.
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Lu Lu
- Ji Hua Laboratory, Foshan, 528200, China.
| | - Weiwei Meng
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
| | - Shao-Dong Cheng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shao-Bo Mi
- Ji Hua Laboratory, Foshan, 528200, China.
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4
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Wang DZ, Liu WD, Mao Y, Li S, Yin LC, Wu H, Li M, Wang Y, Shi XL, Yang X, Liu Q, Chen ZG. Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials. J Am Chem Soc 2024; 146:1681-1689. [PMID: 38178655 DOI: 10.1021/jacs.3c12546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrier-phonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm3 V-1 s-1 W-1 K and a peak ZT of ∼0.4 at 473 K are achieved in Ge0.67Pb0.13Bi0.2Te. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.
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Affiliation(s)
- De-Zhuang Wang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Wei-Di Liu
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland 4072, Australia
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Yuanqing Mao
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
- Department of Physics and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shuai Li
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Liang-Cao Yin
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Hao Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Meng Li
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Yifeng Wang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Xiao-Lei Shi
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Xiaoning Yang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Qingfeng Liu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Zhi-Gang Chen
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
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5
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Jang H, Jung YS, Oh MW. Advances in thermoelectric AgBiSe 2: Properties, strategies, and future challenges. Heliyon 2023; 9:e21117. [PMID: 37928035 PMCID: PMC10623285 DOI: 10.1016/j.heliyon.2023.e21117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 10/04/2023] [Accepted: 10/16/2023] [Indexed: 11/07/2023] Open
Abstract
Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
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6
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Lu X, Xie D, Zhu K, Wei S, Mo Z, Du C, Liang L, Chen G, Liu Z. Swift Assembly of Adaptive Thermocell Arrays for Device-Level Healable and Energy-Autonomous Motion Sensors. NANO-MICRO LETTERS 2023; 15:196. [PMID: 37566154 PMCID: PMC10421839 DOI: 10.1007/s40820-023-01170-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 07/08/2023] [Indexed: 08/12/2023]
Abstract
The evolution of wearable technology has prompted the need for adaptive, self-healable, and energy-autonomous energy devices. This study innovatively addresses this challenge by introducing an MXene-boosted hydrogel electrolyte, which expedites the assembly process of flexible thermocell (TEC) arrays and thus circumvents the complicated fabrication of typical wearable electronics. Our findings underscore the hydrogel electrolyte's superior thermoelectrochemical performance under substantial deformations and repeated self-healing cycles. The resulting hydrogel-based TEC yields a maximum power output of 1032.1 nW under the ΔT of 20 K when being stretched to 500% for 1000 cycles, corresponding to 80% of its initial state; meanwhile, it sustains 1179.1 nW under the ΔT of 20 K even after 60 cut-healing cycles, approximately 92% of its initial state. The as-assembled TEC array exhibits device-level self-healing capability and high adaptability to human body. It is readily applied for touch-based encrypted communication where distinct voltage signals can be converted into alphabet letters; it is also employed as a self-powered sensor to in-situ monitor a variety of body motions for complex human actions. The swift assembly approach, combined with the versatile functionality of the TEC device, paves the way for future advancements in wearable electronics targeting at fitness monitoring and human-machine interfaces.
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Affiliation(s)
- Xin Lu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Daibin Xie
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Kaihua Zhu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Shouhao Wei
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Ziwei Mo
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Chunyu Du
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Lirong Liang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China
| | - Guangming Chen
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China.
| | - Zhuoxin Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China.
- State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
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7
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Liu Z, Wei S, Hu Z, Zhu M, Chen G, Huang Y. MXene and Carbon-Based Electrodes of Thermocells for Continuous Thermal Energy Harvest. SMALL METHODS 2023; 7:e2300190. [PMID: 37096881 DOI: 10.1002/smtd.202300190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Revised: 04/03/2023] [Indexed: 05/03/2023]
Abstract
Low-grade heat represents a significant form of energy loss; thermocells (TECs) utilizing the thermogalvanic effect can convert thermal energy into electricity without generating vibrations, noise, or waste emissions, making them a promising energy conversion technology for efficiently harvesting low-grade heat. Despite recent advancements, the reliance on high-cost platinum electrodes in TECs has considerably hindered their widespread adoption. Developing cost-effective electrodes that maintain the same thermoelectrochemical performance is crucial for the successful application of TECs. In this review article, the exploration of MXene materials as TEC electrodes is discussed first, emphasizing the immense potential of the MXene family for low-grade heat harvesting applications. Next, recent research on carbon-based electrodes is summarized, and morphological and structural optimizations are comprehensively discussed aiming at enhancing the thermoelectrochemical performance of TECs. In the concluding section, the challenges are outlined and future perspectives are offered, which provide valuable insights into the ongoing development of high-performance TEC electrodes using MXene and carbon-based materials.
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Affiliation(s)
- Zhuoxin Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China
| | - Shouhao Wei
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China
| | - Zhe Hu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China
| | - Minshen Zhu
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany
| | - Guangming Chen
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China
| | - Yang Huang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China
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8
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Liu C, Zhang Z, Peng Y, Li F, Miao L, Nishibori E, Chetty R, Bai X, Si R, Gao J, Wang X, Zhu Y, Wang N, Wei H, Mori T. Charge transfer engineering to achieve extraordinary power generation in GeTe-based thermoelectric materials. SCIENCE ADVANCES 2023; 9:eadh0713. [PMID: 37126545 PMCID: PMC10132743 DOI: 10.1126/sciadv.adh0713] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
By the fine manipulation of the exceptional long-range germanium-telluride (Ge─Te) bonding through charge transfer engineering, we have achieved exceptional thermoelectric (TE) and mechanical properties in lead-free GeTe. This chemical bonding mechanism along with a semiordered zigzag nanostructure generates a notable increase of the average zT to a record value of ~1.73 in the temperature range of 323 to 773 K with ultrahigh maximum zT ~ 2.7. In addition, we significantly enhanced the Vickers microhardness numbers (Hv) to an extraordinarily high value of 247 Hv and effectively eliminated the thermal expansion fluctuation at the phase transition, which was problematic for application, by the present charge transfer engineering process and concomitant formation of microstructures. We further fabricated a single-leg TE generator and obtained a conversion efficiency of ~13.4% at the temperature difference of 463 K on a commercial instrument, which is located at the pinnacle of TE conversion.
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Affiliation(s)
- Chengyan Liu
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Zhongwei Zhang
- School of Chemistry and Chemical Engineering and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
| | - Ying Peng
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan
- Guangxi Key Laboratory of Precision Navigation Technology and Application, School of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China
| | - Fucong Li
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Lei Miao
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Eiji Nishibori
- Department of Physics, Faculty of Pure and Applied Science, Tsukuba Research Center for Energy Materials Science (TREMS), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8576, Japan
| | - Raju Chetty
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan
| | - Xiaobo Bai
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Ruifan Si
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Jie Gao
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Xiaoyang Wang
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Yanqiu Zhu
- School of Chemistry and Chemical Engineering and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
| | - Nannan Wang
- School of Chemistry and Chemical Engineering and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
| | - Haiqiao Wei
- State Key Laboratory of Engines, Tianjin University, Tianjin 300072, China
| | - Takao Mori
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan
- Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan
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9
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Qin B, Wang D, Hong T, Wang Y, Liu D, Wang Z, Gao X, Ge ZH, Zhao LD. High thermoelectric efficiency realized in SnSe crystals via structural modulation. Nat Commun 2023; 14:1366. [PMID: 36914654 PMCID: PMC10011372 DOI: 10.1038/s41467-023-37114-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Accepted: 03/02/2023] [Indexed: 03/16/2023] Open
Abstract
Crystalline thermoelectrics have been developed to be potential candidates for power generation and electronic cooling, among which SnSe crystals are becoming the most representative. Herein, we realize high-performance SnSe crystals with promising efficiency through a structural modulation strategy. By alloying strontium at Sn sites, we modify the crystal structure and facilitate the multiband synglisis in p-type SnSe, favoring the optimization of interactive parameters μ and m*. Resultantly, we obtain a significantly enhanced PF ~85 μW cm-1 K-2, with an ultrahigh ZT ~1.4 at 300 K and ZTave ~2.0 among 300-673 K. Moreover, the excellent properties lead to single-leg device efficiency of ~8.9% under a temperature difference ΔT ~300 K, showing superiority among the current low- to mid-temperature thermoelectrics, with an enhanced cooling ΔTmax of ~50.4 K in the 7-pair thermoelectric device. Our study further advances p-type SnSe crystals for practical waste heat recovery and electronic cooling.
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Affiliation(s)
- Bingchao Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Dongyang Wang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Tao Hong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yuping Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Dongrui Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziyuan Wang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Xiang Gao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing, 100094, China
| | - Zhen-Hua Ge
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
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10
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Huan C, Cai Y, Kripalani DR, Zhou K, Ke Q. Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state. NANOSCALE HORIZONS 2023; 8:404-411. [PMID: 36723237 DOI: 10.1039/d2nh00573e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials tend to have the preferable formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D backbone of germanium selenide (γ-GeSe). Interestingly, the Ge-vacancy (VGe) in the interior part of γ-GeSe possesses the lowest formation energy amongst the various types of defects considered. We also find a low diffusion barrier (1.04 eV) of VGe, which is half of those of sulfur vacancies in MoS2. The facile formation of mobile VGe is rooted in the antibonding coupling of the lone-pair Ge 4s and Se 4p states near the valence band maximum, which also exists in other gamma-phase MX (M = Sn, Ge; X = S, Te). The VGe is accompanied by a shallow acceptor level in the band gap and induces strong infrared light absorption and p-type conductivity. The VGe located in the middle cationic Ge sublattice is well protected by the surface Se layers - a feature that is absent in other atomically thin materials. Our work suggests that the unique well-buried inner VGe, with the potential of forming structurally protected ultrathin conducting filaments, may render the GeSe layer an ideal platform for quantum emitting, memristive, and neuromorphic applications.
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Affiliation(s)
- Changmeng Huan
- School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China.
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China.
| | - Devesh R Kripalani
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Kun Zhou
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Qingqing Ke
- School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China.
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China
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11
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Hong M, Li M, Wang Y, Shi XL, Chen ZG. Advances in Versatile GeTe Thermoelectrics from Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208272. [PMID: 36366918 DOI: 10.1002/adma.202208272] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 10/24/2022] [Indexed: 06/16/2023]
Abstract
Driven by the intensive efforts in the development of high-performance GeTe thermoelectrics for mass-market application in power generation and refrigeration, GeTe-based materials display a high figure of merit of >2.0 and an energy conversion efficiency beyond 10%. However, a comprehensive review on GeTe, from fundamentals to devices, is still needed. In this regard, the latest progress on the state-of-the-art GeTe is timely reviewed. The phase transition, intrinsic high carrier concentration, and multiple band edges of GeTe are fundamentally analyzed from the perspectives of the native atomic orbital, chemical bonding, and lattice defects. Then, the fabrication methods are summarized with a focus on large-scale production. Afterward, the strategies for enhancing electronic transports of GeTe by energy filtering effect, resonance doping, band convergence, and Rashba band splitting, and the methods for strengthening phonon scatterings via nanoprecipitates, planar vacancies, and superlattices, are comprehensively reviewed. Besides, the device assembly and performance are highlighted. In the end, future research directions are concluded and proposed, which enlighten the development of broader thermoelectric materials.
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Affiliation(s)
- Min Hong
- Center for Future Materials, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia
| | - Meng Li
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Yuan Wang
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Xiao-Lei Shi
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Zhi-Gang Chen
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
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