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Kim C, Roe DG, Lim DU, Choi YY, Kang MS, Kim DH, Cho JH. Toward human-like adaptability in robotics through a retention-engineered synaptic control system. SCIENCE ADVANCES 2024; 10:eadn6217. [PMID: 38924417 PMCID: PMC11204284 DOI: 10.1126/sciadv.adn6217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 05/21/2024] [Indexed: 06/28/2024]
Abstract
Although advanced robots can adeptly mimic human movement and aesthetics, they are still unable to adapt or evolve in response to external experiences. To address this limitation, we propose an innovative approach that uses parallel-processable retention-engineered synaptic devices in the control system. This approach aims to simulate a human-like learning system without necessitating complex computational systems. The retention properties of the synaptic devices were modulated by adjusting the amount of Ag/AgCl ink sprayed. This changed the voltage drop across the interface between the gate electrode and the electrolyte. Furthermore, the unrestricted movement of ions in the electrolyte enhanced the signal multiplexing capability of the ion gel, enabling device-level parallel processing. By integrating the unique characteristics of the synaptic devices with actuators, we successfully emulated a human-like workout process that includes feedback between acute and chronic responses. The proposed control system offers an innovative approach to reducing system complexity and achieving a human-like learning system in the field of biomimicry.
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Affiliation(s)
- Chan Kim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Dong Un Lim
- Hydrogen Energy Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 Republic of Korea
| | - Yoon Young Choi
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul 04107, Republic of Korea
| | - Dong-Hwan Kim
- School of Chemical Engineering, Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Lee J, Lee J, Bang H, Yoon TW, Ko JH, Zhang G, Park JS, Jeon I, Lee S, Kang B. One-Shot Remote Integration of Macromolecular Synaptic Elements on a Chip for Ultrathin Flexible Neural Network System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402361. [PMID: 38762775 DOI: 10.1002/adma.202402361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 04/23/2024] [Indexed: 05/20/2024]
Abstract
The field of biomimetic electronics that mimic synaptic functions has expanded significantly to overcome the limitations of the von Neumann bottleneck. However, the scaling down of the technology has led to an increasingly intricate manufacturing process. To address the issue, this work presents a one-shot integrable electropolymerization (OSIEP) method with remote controllability for the deposition of synaptic elements on a chip by exploiting bipolar electrochemistry. Condensing synthesis, deposition, and patterning into a single fabrication step is achieved by combining alternating-current voltage superimposed on direct-current voltage-bipolar electropolymerization and a specially designed dual source/drain bipolar electrodes. As a result, uniform 6 × 5 arrays of poly(3,4-ethylenedioxythiophene) channels are successfully fabricated on flexible ultrathin parylene substrates in one-shot process. The channels exhibited highly uniform characteristics and are directly used as electrochemical synaptic transistor with synaptic plasticity over 100 s. The synaptic transistors have demonstrated promising performance in an artificial neural network (NN) simulation, achieving a high recognition accuracy of 95.20%. Additionally, the array of synaptic transistor is easily reconfigured to a multi-gate synaptic circuit to implement the principles of operant conditioning. These results provide a compelling fabrication strategy for realizing cost-effective and disposable NN systems with high integration density.
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Affiliation(s)
- Jiyun Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Jaehoon Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Hyeonsu Bang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Tae Woong Yoon
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Jong Hwan Ko
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Guobing Zhang
- Special Display and Imaging Innovation Center of Anhui Province, National Engineering Lab of Special Display Technology, Academy of Opto-Electronic Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Chemistry and Chemical Engineering, Hefei University of Technology, Key Laboratory of Advance Functional Materials and Devices of Anhui Province, Hefei, 230009, China
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Il Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
| | - Boseok Kang
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Park M, Yang JY, Yeom MJ, Bae B, Baek Y, Yoo G, Lee K. An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP 2S 6/GaN HEMT. SCIENCE ADVANCES 2023; 9:eadh9889. [PMID: 37738348 PMCID: PMC10516496 DOI: 10.1126/sciadv.adh9889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 08/22/2023] [Indexed: 09/24/2023]
Abstract
A neuromuscular junction (NMJ) is a particularized synapse that activates muscle fibers for macro-motions, requiring more energy than computation. Emulating the NMJ is thus challenging owing to the need for both synaptic plasticity and high driving power to trigger motions. Here, we present an artificial NMJ using CuInP2S6 (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. The large output current window of the CIPS/GaN ferroelectric HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ functions of actuation and synaptic plasticity. We also demonstrate the emulation of biological oculomotor dynamics, including in situ object tracking and enhanced stimulus responses, using the fabricated artificial NMJ. We believe that the CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and neuromorphic vision.
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Affiliation(s)
- Minseong Park
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Jeong Yong Yang
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Min Jae Yeom
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Byungjoon Bae
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Geonwook Yoo
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
- Department of Intelligent Semiconductors, Soongsil University, Seoul 06978, South Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
- Department of Material Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA
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Hou P, Lian Z, Chen C. An electric-field-driven ferroelectric nanodomain structure and its multilevel data storage application. Phys Chem Chem Phys 2023; 25:19963-19969. [PMID: 37458765 DOI: 10.1039/d3cp02354k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Solid-state multilevel data storage devices based on ferroelectric materials possess significant potential for use as artificial synapses in building biomimetic neural networks with low energy consumption and efficient data processing capabilities. To enable multilevel data storage, precise control of the ferroelectric domain through voltage pulses is essential. In this study, we investigate the manipulation of ferroelectric nanodomain structures using a nanotip and demonstrate their evolution under controlled application of electric pulses with varying strength and duration. The results highlight the differences in electric-field-driven ferroelectric nanodomain structures between (001)-/(101)- and (111)-oriented PbZr0.2Ti0.8O3 thin films. Interestingly, the latter exhibits highly anisotropic domain wall motion characteristics. The (111)-oriented PbZr0.2Ti0.8O3/SrRuO3 heterostructure demonstrates the best performance in increasing the domain radius with respect to electric pulse strength and duration. It shows at least three resistance states with a high switching ratio, making it a promising candidate for multilevel data storage applications. Additionally, the self-reversal rates of upward and downward domains differ and must be considered in designing and implementing multilevel data storage systems for stability and effectiveness. These findings reveal the potential of ferroelectric nanodomain structures for data storage and pave the way for nanotip-controlled artificial synapses.
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Affiliation(s)
- Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
| | - Zixian Lian
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
| | - Cheng Chen
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
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