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Mondal S, Jayalekshmi UJ, Singh S, Mukherjee RK, Shukla AK. Design, development, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:063901. [PMID: 38829214 DOI: 10.1063/5.0194852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Accepted: 05/15/2024] [Indexed: 06/05/2024]
Abstract
A versatile graphene epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) in diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency induction enables heating capabilities up to 2000 °C, with controlled heating ramp rates achievable up to 200 °C/s. The details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies, such as confinement-controlled sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.
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Affiliation(s)
- S Mondal
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - U J Jayalekshmi
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - S Singh
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
| | - R K Mukherjee
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - A K Shukla
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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Yang D, Laarman JH, Tonouchi M. Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM). MATERIALS (BASEL, SWITZERLAND) 2024; 17:1497. [PMID: 38612011 PMCID: PMC11012325 DOI: 10.3390/ma17071497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 03/23/2024] [Accepted: 03/24/2024] [Indexed: 04/14/2024]
Abstract
Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties of graphene and perform large-scale graphene mapping. By comparing THz emission properties from monolayer graphene on different types of silicon substrates, including those treated with buffered oxide etches, we discern the influence of native oxide layers and surface dipoles on graphene. Finally, the mechanism of THz emission from the graphene/silicon heterojunction is discussed, and the large-scale mapping of monolayer graphene on silicon is achieved successfully. These results demonstrate the efficacy of TES/LTEM for graphene characterization in the modern graphene-based semiconductor industry.
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Affiliation(s)
- Dongxun Yang
- Institute of Laser Engineering, Osaka University, Osaka 565-0871, Japan
| | - Jesse Henri Laarman
- Department of Applied Physics, Eindhoven University of Technology, 5612 AZ Eindhoven, The Netherlands
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Zhao J, Ji P, Li Y, Li R, Zhang K, Tian H, Yu K, Bian B, Hao L, Xiao X, Griffin W, Dudeck N, Moro R, Ma L, de Heer WA. Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide. Nature 2024; 625:60-65. [PMID: 38172363 DOI: 10.1038/s41586-023-06811-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 10/31/2023] [Indexed: 01/05/2024]
Abstract
Semiconducting graphene plays an important part in graphene nanoelectronics because of the lack of an intrinsic bandgap in graphene1. In the past two decades, attempts to modify the bandgap either by quantum confinement or by chemical functionalization failed to produce viable semiconducting graphene. Here we demonstrate that semiconducting epigraphene (SEG) on single-crystal silicon carbide substrates has a band gap of 0.6 eV and room temperature mobilities exceeding 5,000 cm2 V-1 s-1, which is 10 times larger than that of silicon and 20 times larger than that of the other two-dimensional semiconductors. It is well known that when silicon evaporates from silicon carbide crystal surfaces, the carbon-rich surface crystallizes to produce graphene multilayers2. The first graphitic layer to form on the silicon-terminated face of SiC is an insulating epigraphene layer that is partially covalently bonded to the SiC surface3. Spectroscopic measurements of this buffer layer4 demonstrated semiconducting signatures4, but the mobilities of this layer were limited because of disorder5. Here we demonstrate a quasi-equilibrium annealing method that produces SEG (that is, a well-ordered buffer layer) on macroscopic atomically flat terraces. The SEG lattice is aligned with the SiC substrate. It is chemically, mechanically and thermally robust and can be patterned and seamlessly connected to semimetallic epigraphene using conventional semiconductor fabrication techniques. These essential properties make SEG suitable for nanoelectronics.
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Affiliation(s)
- Jian Zhao
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Peixuan Ji
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Yaqi Li
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Rui Li
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Kaimin Zhang
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Hao Tian
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Kaicheng Yu
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Boyue Bian
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Luzhen Hao
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Xue Xiao
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Will Griffin
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
| | - Noel Dudeck
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA
| | - Ramiro Moro
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China
| | - Lei Ma
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China.
| | - Walt A de Heer
- Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin, People's Republic of China.
- School of Physics, Georgia Institute of Technology, Atlanta, GA, USA.
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