An epitaxial graphene platform for zero-energy edge state nanoelectronics

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well-controlled, tunable, and scalable. Here, these challenges are addressed by a new approach, which combines molecular beam epitaxy and in situ band engineering in ultra-high vacuum of semiconducting gallium selenide (GaSe) on graphene. In situ studies by electron diffraction, scanning probe microscopy, and angle-resolved photoelectron spectroscopy reveal that atomically-thin layers of GaSe align in the layer plane with the underlying lattice of graphene. The GaSe/graphene heterostructure, referred to as 2semgraphene, features a centrosymmetric (group symmetry D3d) polymorph of GaSe, a charge dipole at the GaSe/graphene interface, and a band structure tunable by the layer thickness. The newly-developed, scalable 2semgraphene is used in optical sensors that exploit the photoactive GaSe layer and the built-in potential at its interface with the graphene channel. This proof of concept has the potential for further advances and device architectures that exploit 2semgraphene as a functional building block.

Unique electronic and optical properties of stacking-modulated bilayer graphene under external magnetic fields

This study delves into the magneto-electronic and magneto-optical properties of stacking-modulated bilayer graphene. By manipulating domain walls (DWs) across AB-BA domains periodically, we unveil oscillatory Landau subbands and the associated optical excitations. The DWs act as periodic potentials, yielding fascinating 1D spectral features. Our exploration reveals 1D phenomena localized to Bernal stacking, DW regions, and stacking boundaries, highlighting the intriguing formation of Landau state quantization influenced by the commensuration between the magnetic length and the system. The stable quantized localization within different regions leads to the emergence of unconventional quantized subbands. This study provides valuable insights into the essential properties of stacking-modulated bilayer graphene.

Electron wave and quantum optics in graphene

In the last decade, graphene has become an exciting platform for electron optical experiments, in some aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states,e.g., snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

Design, development, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC

A versatile graphene epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) in diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency induction enables heating capabilities up to 2000 °C, with controlled heating ramp rates achievable up to 200 °C/s. The details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies, such as confinement-controlled sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.

Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)

Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties of graphene and perform large-scale graphene mapping. By comparing THz emission properties from monolayer graphene on different types of silicon substrates, including those treated with buffered oxide etches, we discern the influence of native oxide layers and surface dipoles on graphene. Finally, the mechanism of THz emission from the graphene/silicon heterojunction is discussed, and the large-scale mapping of monolayer graphene on silicon is achieved successfully. These results demonstrate the efficacy of TES/LTEM for graphene characterization in the modern graphene-based semiconductor industry.

Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide

Semiconducting graphene plays an important part in graphene nanoelectronics because of the lack of an intrinsic bandgap in graphene1. In the past two decades, attempts to modify the bandgap either by quantum confinement or by chemical functionalization failed to produce viable semiconducting graphene. Here we demonstrate that semiconducting epigraphene (SEG) on single-crystal silicon carbide substrates has a band gap of 0.6 eV and room temperature mobilities exceeding 5,000 cm2 V-1 s-1, which is 10 times larger than that of silicon and 20 times larger than that of the other two-dimensional semiconductors. It is well known that when silicon evaporates from silicon carbide crystal surfaces, the carbon-rich surface crystallizes to produce graphene multilayers2. The first graphitic layer to form on the silicon-terminated face of SiC is an insulating epigraphene layer that is partially covalently bonded to the SiC surface3. Spectroscopic measurements of this buffer layer4 demonstrated semiconducting signatures4, but the mobilities of this layer were limited because of disorder5. Here we demonstrate a quasi-equilibrium annealing method that produces SEG (that is, a well-ordered buffer layer) on macroscopic atomically flat terraces. The SEG lattice is aligned with the SiC substrate. It is chemically, mechanically and thermally robust and can be patterned and seamlessly connected to semimetallic epigraphene using conventional semiconductor fabrication techniques. These essential properties make SEG suitable for nanoelectronics.