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Cheng B, Gao Y, Zheng Z, Chen S, Liu Z, Zhang L, Zhu Q, Li H, Li L, Zeng C. Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium. Nat Commun 2024; 15:5513. [PMID: 38951497 PMCID: PMC11217359 DOI: 10.1038/s41467-024-49706-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 06/17/2024] [Indexed: 07/03/2024] Open
Abstract
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.
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Affiliation(s)
- Bin Cheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Yang Gao
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhi Zheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Shuhang Chen
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zheng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Ling Zhang
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Qi Zhu
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, China
| | - Lin Li
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
| | - Changgan Zeng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
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2
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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3
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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Lu XF, Zhang CP, Wang N, Zhao D, Zhou X, Gao W, Chen XH, Law KT, Loh KP. Nonlinear transport and radio frequency rectification in BiTeBr at room temperature. Nat Commun 2024; 15:245. [PMID: 38172558 PMCID: PMC10764878 DOI: 10.1038/s41467-023-44439-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 12/13/2023] [Indexed: 01/05/2024] Open
Abstract
Materials showing second-order nonlinear transport under time reversal symmetry can be used for Radio Frequency (RF) rectification, but practical application demands room temperature operation and sensitivity to microwatts level RF signals in the ambient. In this study, we demonstrate that BiTeBr exhibits a giant nonlinear response which persists up to 350 K. Through scaling and symmetry analysis, we show that skew scattering is the dominant mechanism. Additionally, the sign of the nonlinear response can be electrically switched by tuning the Fermi energy. Theoretical analysis suggests that the large Rashba spin-orbit interactions (SOI), which gives rise to the chirality of the Bloch electrons, provide the microscopic origin of the observed nonlinear response. Our BiTeBr rectifier is capable of rectifying radiation within the frequency range of 0.2 to 6 gigahertz at room temperature, even at extremely low power levels of -15 dBm, and without the need for external biasing. Our work highlights that materials exhibiting large Rashba SOI have the potential to exhibit nonlinear responses at room temperature, making them promising candidates for harvesting high-frequency and low-power ambient electromagnetic energy.
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Affiliation(s)
- Xiu Fang Lu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Dan Zhao
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Hui Chen
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - K T Law
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China.
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore.
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5
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Zhang Y, Xu H, Jia K, Lan G, Huang Z, He B, He C, Shao Q, Wang Y, Zhao M, Ma T, Dong J, Guo C, Cheng C, Feng J, Wan C, Wei H, Shi Y, Zhang G, Han X, Yu G. Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal. SCIENCE ADVANCES 2023; 9:eadg9819. [PMID: 37910619 PMCID: PMC10619928 DOI: 10.1126/sciadv.adg9819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Accepted: 09/28/2023] [Indexed: 11/03/2023]
Abstract
Spin-orbit torque (SOT) is a promising strategy to deterministically switch the perpendicular magnetization, but usually requires an in-plane magnetic field for breaking the mirror symmetry, which is not suitable for most advanced industrial applications. Van der Waals (vdW) materials with low crystalline symmetry and topological band structures, e.g., Weyl semimetals (WSMs), potentially serve as an outstanding system that may simultaneously realize field-free switching and high energy efficiency. Yet, the demonstration of these superiorities at room temperature has not been realized. Here, we achieve a field-free switching of perpendicular magnetization by using a layered type II WSM, TaIrTe4, in a TaIrTe4/Ti/CoFeB system at room temperature with the critical switching current density ~2.4 × 106 A cm-2. The field-free switching is ascribed to the out-of-plane SOT allowed by the low crystal symmetry. Our work suggests that using low-symmetry materials to generate SOT is a promising route for the manipulation of perpendicular magnetization at room temperature.
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Affiliation(s)
- Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Ke Jia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guibin Lan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Qiming Shao
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yizhan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianyi Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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