Tailoring high-energy storage NaNbO3-based materials from antiferroelectric to relaxor states

Unconventional Polarization Response in Titanite-Type Oxides due to Hashed Antiferroelectric Domains

Domains in a crystal, which have crystallographic uniformity and are geometrically segmented, typically arise from various phase transitions. The physical properties within individual domains are inherently the same as those in the homogeneous bulk. As a result, sufficiently large domains have little influence on the bulk properties. However, as the domains decrease in size to the nanoscale, for instance, due to multiple phase instabilities or spatial inhomogeneities, then the materials often acquire exceptional functionalities that are unattainable without these domains. This effect is exemplified by the ultrahigh dielectric and piezoelectric responses observed in ferroelectric oxides with nanoscale polar domains as well as in ferroelectric relaxors with polar nanoclusters. Here, we demonstrate that hashed nanoscale domains in an antiferroelectric material are also capable of boosting dielectric permittivity in an unconventional way. This discovery has been made in an antiferroelectric titanite-type oxide, CaTi(Si1-xGex)O5, in which the permittivity significantly increases when the antiferroelectric order becomes short-range. Our transmission electron microscopy observations have clarified that polar regions simultaneously appear around antiphase boundaries in the antiferroelectric phase of CaTi(Si1-xGex)O5. As the concentration of the antiphase boundary increases, the polar regions become denser and play a crucial role in boosting the permittivity. At the composition of x = 0.5, the value of the permittivity finally reaches double that in the bulk and shows excellent linearity, at least until an electric field of 500 kV/cm is applied. The present findings highlight the promise of domain engineering for boosting the permittivity in antiferroelectrics as a way to develop materials with excellent dielectric properties.

Superior Energy Storage Capability and Fluorescence Negative Thermal Expansion of NaNbO3-Based Transparent Ceramics by Synergistic Optimization

Transparent dielectric ceramics are splendid candidates for transparent pulse capacitors (TPCs) due to splendid cycle stability and large power density. However, the performance and service life of TPCs at present are threatened by overheating damage caused by dielectric loss. Here, a cooperative optimization strategy of microstructure control and superparaelectric regional regulation is proposed to simultaneously achieve excellent energy storage performance and real-time temperature monitoring function in NaNbO3-based ceramics. By introducing aliovalent ions and oxides with large bandgap energy, the size of polar nanoregions is continuously reduced. Due to the combined effect of increased relaxor behavior and fine grains, excellent comprehensive performances are obtained through doping appropriate amounts of Bi, Yb, Tm, and Zr, Ta, Hf in A- and B-sites of the NaNbO3 matrix, including recoverable energy storage density (5.39 J cm-3), extremely high energy storage efficiency (91.97%), ultra-fast discharge time (29 ns), and superior optical transmittance (≈47.5% at 736 nm). Additionally, the phenomenon of abnormal fluorescent negative thermal expansion is realized due to activation mechanism of surface phonon at high temperatures that can promote the formation of [Yb···O]-Tm3+ pairs, showing great potential in real-time temperature monitoring of TPCs. This research provides ideas for developing electronic devices with multiple functionalities.

Reversal in Output Current Direction of 4H-SiC/Cu Tribovoltaic Nanogenerator as Controlled by Relative Humidity

Tribovoltaic nanogenerators (TVNG) represent a fantastic opportunity for developing low-frequency energy harvesting and self-powered sensing, by exploiting their real-time direct-current (DC) output. Here, a thorough study of the effect of relative humidity (RH) on a TVNG consisting of 4H-SiC (n-type) and metallic copper foil (SM-TVNG) is presented. The SM-TVNG shows a remarkable sensitivity to RH and an abnormal RH dependence. When RH increases from ambient humidity up to 80%, an increasing electrical output is observed. However, when RH rises from 80% to 98%, the signal output not only decreases, but its direction reverses as it crosses 90% RH. This behavior differs greatly from that of a Si-based TVNG, whose output constantly increases with RH. The behavior of the SM-TVNG might result from the competition between the built-in electric field induced by metal-semiconductor contact and a strong triboelectric electric field induced by solid-liquid triboelectrification under high RH. The authors also demonstrated that both SM-TVNG and Si-based TVNG can work effectively as-is even fully submerged in deionized water. This mechanism can affect other devices and be applied to design self-powered sensors working under high RH or underwater.

Translational Antiphase Boundaries in NaNbO3 Antiferroelectrics

Planar defects are known to be of importance in affecting the functional properties of materials. Translational antiphase boundaries (APBs) in particular have attracted considerable attention in perovskite oxides, but little is known in lead-free antiferroelectric oxides that are promising candidates for energy storage applications. Here, we present a study of translational APBs in prototypical antiferroelectric NaNbO3 using aberration-corrected (scanning) transmission electron microscopy (TEM) techniques at different length scales. The translational APBs in NaNbO3 are characterized by a 2-fold-modulated structure, which is antipolar in nature and exhibits a high density, different from the polar nature and lower density in PbZrO3. The high stability of translational APBs against external electric fields and elevated temperatures was revealed using ex situ and in situ TEM experiments and is expected to be associated with their antipolar nature. Density functional theory calculations demonstrate that translational APBs possess only slightly higher free energy than the antiferroelectric and ferroelectric phase energies with differences of 29 and 33 meV/f.u., respectively, justifying their coexistence down to the nanoscale at room temperature. These results provide a detailed atomistic elucidation of translational APBs in NaNbO3 with antipolar character and stability against external stimuli, establishing the basis of defect engineering of antiferroelectrics for energy storage devices.

Enhanced Energy Storage Performance and Efficiency in Bi0.5(Na0.8K0.2)0.5TiO3-Bi0.2Sr0.7TiO3 Relaxor Ferroelectric Ceramics via Domain Engineering

Dielectric materials are highly desired for pulsed power capacitors due to their ultra-fast charge-discharge rate and excellent fatigue behavior. Nevertheless, the low energy storage density caused by the low breakdown strength has been the main challenge for practical applications. Herein, we report the electric energy storage properties of (1 - x) Bi_0.5(Na_0.8K_0.2)_0.5TiO₃-xBi_0.2Sr_0.7TiO₃ (BNKT-BST; x = 0.15-0.50) relaxor ferroelectric ceramics that are enhanced via a domain engineering method. A rhombohedral-tetragonal phase, the formation of highly dynamic PNRs, and a dense microstructure are confirmed from XRD, Raman vibrational spectra, and microscopic investigations. The relative dielectric permittivity (2664 at 1 kHz) and loss factor (0.058) were gradually improved with BST (x = 0.45). The incorporation of BST into BNKT can disturb the long-range ferroelectric order, lowering the dielectric maximum temperature T_m and inducing the formation of highly dynamic polar nano-regions. In addition, the T_m shifts toward a high temperature with frequency and a diffuse phase transition, indicating relaxor ferroelectric characteristics of BNKT-BST ceramics, which is confirmed by the modified Curie-Weiss law. The rhombohedral-tetragonal phase, fine grain size, and lowered T_m with relaxor properties synergistically contribute to a high P_max and low P_r, improving the breakdown strength with BST and resulting in a high recoverable energy density W_rec of 0.81 J/cm³ and a high energy efficiency η of 86.95% at 90 kV/cm for x = 0.45.