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Akinpelu A, Bhullar M, Yao Y. Discovery of novel materials through machine learning. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:453001. [PMID: 39106893 DOI: 10.1088/1361-648x/ad6bdb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Accepted: 08/06/2024] [Indexed: 08/09/2024]
Abstract
Experimental exploration of new materials relies heavily on a laborious trial-and-error approach. In addition to substantial time and resource requirements, traditional experiments and computational modelling are typically limited in finding target materials within the enormous chemical space. Therefore, creating innovative techniques to expedite material discovery becomes essential. Recently, machine learning (ML) has emerged as a valuable tool for material discovery, garnering significant attention due to its remarkable advancements in prediction accuracy and time efficiency. This rapidly developing computational technique accelerates the search and optimization process and enables the prediction of material properties at a minimal computational cost, thereby facilitating the discovery of novel materials. We provide a comprehensive overview of recent studies on discovering new materials by predicting materials and their properties using ML techniques. Beginning with an introduction of the fundamental principles of ML methods, we subsequently examine the current research landscape on the applications of ML in predicting material properties that lead to the discovery of novel materials. Finally, we discuss challenges in employing ML within materials science, propose potential solutions, and outline future research directions.
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Affiliation(s)
- Akinwumi Akinpelu
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
| | - Mangladeep Bhullar
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
| | - Yansun Yao
- Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada
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Li X, Guo Z, Zhang X, Yang G. Layered Hydride LiH 4 with a Pressure-Insensitive Superconductivity. Inorg Chem 2024; 63:8257-8263. [PMID: 38662198 DOI: 10.1021/acs.inorgchem.4c00520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
For hydride superconductors, each significant advance is built upon the discovery of novel H-based structural units, which in turn push the understanding of the superconducting mechanism to new heights. Based on first-principles calculations, we propose a metastable LiH4 with a wavy H layer composed of the edge-sharing pea-like H18 rings at high pressures. Unexpectedly, it exhibits pressure-insensitive superconductivity manifested by an extremely small pressure coefficient (dTc/dP) of 0.04 K/GPa. This feature is attributed to the slightly weakened electron-phonon coupling with pressure, caused by the reduced charge transfer from Li atoms to wavy H layers, significantly suppressing the substantial increase in the contribution of phonons to Tc. Its superconductivity originates from the strong coupling between the H 1s electrons and the high-frequency phonons associated with the H layer. Our study extends the list of H-based structural units and enhances the in-depth understanding of pressure-related superconductivity.
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Affiliation(s)
- Xing Li
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Zixuan Guo
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Xiaohua Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
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Xie J, Zhou Y, Faizan M, Li Z, Li T, Fu Y, Wang X, Zhang L. Designing semiconductor materials and devices in the post-Moore era by tackling computational challenges with data-driven strategies. NATURE COMPUTATIONAL SCIENCE 2024; 4:322-333. [PMID: 38783137 DOI: 10.1038/s43588-024-00632-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 04/18/2024] [Indexed: 05/25/2024]
Abstract
In the post-Moore's law era, the progress of electronics relies on discovering superior semiconductor materials and optimizing device fabrication. Computational methods, augmented by emerging data-driven strategies, offer a promising alternative to the traditional trial-and-error approach. In this Perspective, we highlight data-driven computational frameworks for enhancing semiconductor discovery and device development by elaborating on their advances in exploring the materials design space, predicting semiconductor properties and optimizing device fabrication, with a concluding discussion on the challenges and opportunities in these areas.
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Affiliation(s)
- Jiahao Xie
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Key Laboratory of Material Simulation Methods & Software of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, China
| | - Yansong Zhou
- State Key Laboratory of Superhard Materials, International Center of Computational Method and Software, School of Physics, Jilin University, Changchun, China
| | - Muhammad Faizan
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Key Laboratory of Material Simulation Methods & Software of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, China
| | - Zewei Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Key Laboratory of Material Simulation Methods & Software of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, China
| | - Tianshu Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Key Laboratory of Material Simulation Methods & Software of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, China
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, International Center of Computational Method and Software, School of Physics, Jilin University, Changchun, China
| | - Xinjiang Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Key Laboratory of Material Simulation Methods & Software of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, China.
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, Key Laboratory of Material Simulation Methods & Software of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, China.
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Liu M, Wang J, Hu J, Liu P, Niu H, Yan X, Li J, Yan H, Yang B, Sun Y, Chen C, Kresse G, Zuo L, Chen XQ. Layer-by-layer phase transformation in Ti 3O 5 revealed by machine-learning molecular dynamics simulations. Nat Commun 2024; 15:3079. [PMID: 38594273 PMCID: PMC11004112 DOI: 10.1038/s41467-024-47422-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Accepted: 03/28/2024] [Indexed: 04/11/2024] Open
Abstract
Reconstructive phase transitions involving breaking and reconstruction of primary chemical bonds are ubiquitous and important for many technological applications. In contrast to displacive phase transitions, the dynamics of reconstructive phase transitions are usually slow due to the large energy barrier. Nevertheless, the reconstructive phase transformation from β- to λ-Ti3O5 exhibits an ultrafast and reversible behavior. Despite extensive studies, the underlying microscopic mechanism remains unclear. Here, we discover a kinetically favorable in-plane nucleated layer-by-layer transformation mechanism through metadynamics and large-scale molecular dynamics simulations. This is enabled by developing an efficient machine learning potential with near first-principles accuracy through an on-the-fly active learning method and an advanced sampling technique. Our results reveal that the β-λ phase transformation initiates with the formation of two-dimensional nuclei in the ab-plane and then proceeds layer-by-layer through a multistep barrier-lowering kinetic process via intermediate metastable phases. Our work not only provides important insight into the ultrafast and reversible nature of the β-λ transition, but also presents useful strategies and methods for tackling other complex structural phase transitions.
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Affiliation(s)
- Mingfeng Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Jiantao Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Junwei Hu
- State Key Laboratory of Solidification Processing, International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
| | - Haiyang Niu
- State Key Laboratory of Solidification Processing, International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, China.
| | - Xuexi Yan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Jiangxu Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Haile Yan
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Bo Yang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Yan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Chunlin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Georg Kresse
- University of Vienna, Faculty of Physics and Center for Computational Materials Science, Kolingasse 14-16, A-1090, Vienna, Austria
| | - Liang Zuo
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
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Manfro JFB, Rech GL, Zorzi JE, Perottoni CA. Relativistic effects and pressure-induced phase transition in CsAu. Phys Chem Chem Phys 2024; 26:5529-5536. [PMID: 38284136 DOI: 10.1039/d3cp03716a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Cesium auride (CsAu) is an intriguing compound formed by two metals that, upon reacting, exhibits properties of an ionic salt. In this study, we employ computer simulations to explore the influence of relativistic effects on the structure and some physical properties of CsAu, as well as on a potential pressure-induced structural phase transition, the effect of high pressures on its electronic gap, and the possible transition to a conducting state. We have found that including relativistic effects reduces the lattice parameter of CsAu and brings its volumetric properties closer to the trend observed in alkali halides. It also enhances the charge transfer from cesium to gold, resulting in a difference of up to 0.15e, at ambient pressure, between non-relativistic and fully relativistic calculations. Additionally, upon increasing pressure, in the absence of intervening structural phase transitions, the closing of CsAu's band gap is expected at approximately 31.5 GPa. The inclusion of relativistic effects stabilizes the CsAu Pm3̄m structure and shifts the transition pressure to a possible high-pressure P4/mmm phase from 2 GPa (non-relativistic calculation) to 14 GPa (fully-relativistic calculation). Both the Pm3̄m and P4/mmm structures become dynamically unstable around 15 GPa, thus suggesting that the tetragonal structure may be an intermediate state towards a truly stable high-pressure CsAu phase.
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Affiliation(s)
- Júlia F B Manfro
- Universidade de Caxias do Sul, 95070-560, Caxias do Sul, RS, Brazil.
| | - Giovani L Rech
- Universidade de Caxias do Sul, 95070-560, Caxias do Sul, RS, Brazil.
| | - Janete E Zorzi
- Universidade de Caxias do Sul, 95070-560, Caxias do Sul, RS, Brazil.
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