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Das S, Huang D, Verzhbitskiy IA, Ooi ZE, Lau CS, Lee R, Wong CPY, Goh KEJ. Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS 2. ACS NANO 2024; 18:30805-30815. [PMID: 39437428 PMCID: PMC11544929 DOI: 10.1021/acsnano.4c11080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2024] [Revised: 10/09/2024] [Accepted: 10/11/2024] [Indexed: 10/25/2024]
Abstract
Excitons are key to the optoelectronic applications of van der Waals semiconductors, with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation remains challenging due to inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic electrical control of valley polarization in charged excitonic states of monolayer tungsten disulfide, achieving up to a 6-fold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the charged exciton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible nonmonotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a resonant interplay between neutral and charged exciton states.
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Affiliation(s)
- Sarthak Das
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Quantum
Innovation Centre (Q.InC), Agency for Science
Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ding Huang
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Quantum
Innovation Centre (Q.InC), Agency for Science
Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ivan A. Verzhbitskiy
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Quantum
Innovation Centre (Q.InC), Agency for Science
Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Zi-En Ooi
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Chit Siong Lau
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Quantum
Innovation Centre (Q.InC), Agency for Science
Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Science,
Mathematics and Technology, Singapore University
of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Rainer Lee
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Quantum
Innovation Centre (Q.InC), Agency for Science
Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Calvin Pei Yu Wong
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute
of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Quantum
Innovation Centre (Q.InC), Agency for Science
Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Department
of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
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2
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Woods JM, Chand SB, Mejia E, Adhikari A, Taniguchi T, Watanabe K, Flick J, Grosso G. Emergent Optical Resonances in Atomically Phase-Patterned Semiconducting Monolayers of WS 2. ACS PHOTONICS 2024; 11:3784-3793. [PMID: 39310296 PMCID: PMC11413843 DOI: 10.1021/acsphotonics.4c00983] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Revised: 08/02/2024] [Accepted: 08/06/2024] [Indexed: 09/25/2024]
Abstract
Atomic-scale control of light-matter interactions represents the ultimate frontier for many applications in photonics and quantum technology. Two-dimensional semiconductors, including transition-metal dichalcogenides, are a promising platform to achieve such control due to the combination of an atomically thin geometry and convenient photophysical properties. Here, we demonstrate that a variety of durable polymorphic structures can be combined to generate additional optical resonances beyond the standard excitons. We theoretically predict and experimentally show that atomic-sized patches of the 1T phase within the 1H matrix form unique electronic bands that lead to the emergence of robust optical resonances with strong absorption, circularly polarized emission, and long radiative lifetimes. The atomic manipulation of two-dimensional semiconductors opens unexplored scenarios for light harvesting devices and exciton-based photonics.
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Affiliation(s)
- John M. Woods
- Photonics
Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
| | - Saroj B. Chand
- Photonics
Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
| | - Enrique Mejia
- Photonics
Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
| | - Ashok Adhikari
- Photonics
Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Johannes Flick
- Center
for Computational Quantum Physics, Flatiron
Institute, New York, New York 10010, United States
- Department
of Physics, City College of New York, New York, New York 10031, United States
- Physics
Program,
Graduate Center, City University of New
York, New York New York 10016, United States
| | - Gabriele Grosso
- Photonics
Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
- Physics
Program,
Graduate Center, City University of New
York, New York New York 10016, United States
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3
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Kumar AM, Yagodkin D, Rosati R, Bock DJ, Schattauer C, Tobisch S, Hagel J, Höfer B, Kirchhof JN, Hernández López P, Burfeindt K, Heeg S, Gahl C, Libisch F, Malic E, Bolotin KI. Strain fingerprinting of exciton valley character in 2D semiconductors. Nat Commun 2024; 15:7546. [PMID: 39214968 PMCID: PMC11364664 DOI: 10.1038/s41467-024-51195-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 07/30/2024] [Indexed: 09/04/2024] Open
Abstract
Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe2 and WS2. We also demonstrate a new brightening mechanism, rendering an otherwise "dark" intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems.
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Affiliation(s)
- Abhijeet M Kumar
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Denis Yagodkin
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Roberto Rosati
- Philipps-Universität Marburg, Mainzer Gasse 33, Marburg, Germany
| | - Douglas J Bock
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Christoph Schattauer
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Sarah Tobisch
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Joakim Hagel
- Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Gothenburg, Sweden
| | - Bianca Höfer
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Jan N Kirchhof
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Delft, The Netherlands
| | - Pablo Hernández López
- Institute for Physics and IRIS Adlershof, Humboldt-Universität Berlin, Newtonstraße 15, Berlin, Germany
| | - Kenneth Burfeindt
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Sebastian Heeg
- Institute for Physics and IRIS Adlershof, Humboldt-Universität Berlin, Newtonstraße 15, Berlin, Germany
| | - Cornelius Gahl
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Florian Libisch
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Ermin Malic
- Philipps-Universität Marburg, Mainzer Gasse 33, Marburg, Germany
| | - Kirill I Bolotin
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany.
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4
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Park S, Kim J, Kim D, Watanabe K, Taniguchi T, Seo MK. Demonstration of Two-Dimensional Exciton Complex Palette. ACS NANO 2024. [PMID: 38335539 DOI: 10.1021/acsnano.3c11214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Exciton complexes in two-dimensional semiconductors, encompassing bright and dark excitons, biexcitons, and defect-bound excitons, have shown significant potential across a wide range of research areas. These applications range from exploring quantum many-body phenomena to developing nonclassical light sources and quantum transport devices. To fully leverage their dynamic and interactive properties and extend the capabilities of excitonic devices, realizing systematic engineering and mixing of the exciton complexes are crucial. Unlike conventional material methods, which often lead to undesired changes in the electronic band structure and binding energy, optical methods provide a means to manipulate the radiative decay dynamics of individual exciton complexes in a purely environmental manner. Here, we employ a specialized photonic platform, analogous to an artist's palette, to arrange and mix exciton complexes on an identical two-dimensional transition metal dichalcogenide medium. Essentially, a gradient thickness mirror (GTM) continuously tunes the local distribution of optical vacuum field interference. The GTM platform enables us to create and examine five distinct compositions of the exciton complexes of the WSe2 monolayer and their contributions to the photoluminescence spectrum. Moreover, the exciton complex palette facilitates the observation of dark and defect-bound excitons, even at high temperatures of 70 K, and its performance can be further managed by simple postprocessing manipulations.
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Affiliation(s)
- Sanghyeok Park
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
| | - Jaeyu Kim
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
| | - Dongha Kim
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Min-Kyo Seo
- Department of Physics, KAIST, Daejeon, Daehak-ro, 291, 34141, Republic of Korea
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