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Zhu W, Sun J, Wang Y, Li Y, Bai H, Wang Q, Han L, Zhang Q, Wu H, Song C, Pan F. Room-Temperature Magneto-Photoresponse in All-2D Optoelectronic Devices for In-Sensor Vision Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403624. [PMID: 39129355 DOI: 10.1002/adma.202403624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 07/22/2024] [Indexed: 08/13/2024]
Abstract
Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto-photoresponse. It enriches the application scenarios and shows potential to construct in-sensor vision systems for artificial intelligence with gate-free architecture. However, achieving a simultaneous existence of room-temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room-temperature magneto-photoresponse is accomplished in all-2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room-temperature magnetism and photoelectric properties is realized by introducing the unique magneto-band structure effect from 2D interface, resulting in magneto-tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto-photoresponse, traditional gate-controlled phototransistors are replaced and a prototype in-sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low-contrast environments is established. These findings pave a way for achieving high-temperature magneto-photoresponse, thereby guiding the construction of robust in-sensor vision systems toward high performance and broad applications.
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Affiliation(s)
- Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Jiacheng Sun
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuyan Wang
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuankun Li
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Qingtian Zhang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaqiang Wu
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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Hendriks F, Rojas-Lopez RR, Koopmans B, Guimarães MHD. Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor. Nat Commun 2024; 15:1298. [PMID: 38346955 PMCID: PMC10861592 DOI: 10.1038/s41467-024-45623-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 01/30/2024] [Indexed: 02/15/2024] Open
Abstract
Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr2Ge2Te6 can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr2Ge2Te6. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.
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Affiliation(s)
- Freddie Hendriks
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Rafael R Rojas-Lopez
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
| | - Bert Koopmans
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Marcos H D Guimarães
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands.
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